Patents by Inventor Shunichi Motte

Shunichi Motte has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6323923
    Abstract: A reflective type liquid crystal display device has a first transparent substrate, a second transparent substrate, and a light scattering liquid crystal layer disposed between the first and second transparent substrates. A solar cell is disposed on the second transparent substrate. A portion of the solar cell comprises an active element for driving the light scattering liquid crystal layer.
    Type: Grant
    Filed: April 16, 1999
    Date of Patent: November 27, 2001
    Assignee: Seiko Instruments R&D Center Inc.
    Inventors: Masafumi Hoshino, Shuhei Yamamoto, Shunichi Motte, Teruo Ebihara, Shigeru Senbonmatsu, Kaori Takano, Osamu Yamazaki, Naotoshi Shino, Takakazu Fukuchi, Hiroshi Sakama
  • Patent number: 6266113
    Abstract: A reflection type liquid crystal display device according to the present invention is constructed to include: a light modulation layer having a light scattering state changed when a voltage is applied between electrode faces; at least one kind of color separation layer arranged at the back of the liquid crystal; and a reflection layer arranged at the back of the color separation layer. The light modulation layer is a polymer network type polymer scattered liquid crystal layer or a phase conversion type liquid crystal layer, and the color separation mirror is a cholesteric liquid crystal polymer layer or a dielectric multi-layered thin film characterized to reflect a light within a predetermined wavelength range in the visible light region selectively. A reflection preventing layer and an ultraviolet ray cut-off layer are further arranged on the surfaces of the electrode faces.
    Type: Grant
    Filed: June 19, 1997
    Date of Patent: July 24, 2001
    Assignee: Seiko Instruments Inc.
    Inventors: Osamu Yamazaki, Shunichi Motte, Teruo Ebihara, Shigeru Senbonmatsu, Kaori Taniguchi, Takakazu Fukuchi, Hiroshi Sakama, Masafumi Hoshino, Naotoshi Shino, Shuhei Yamamoto
  • Patent number: 6215536
    Abstract: A reflective liquid crystal display device comprises a transparent first substrate having formed thereon a transparent electrode, a first filter having a first color, and a second filte having a second color. A second substrate is disposed opposite and spaced-apart from the first substrate. A reflection layer is disposed on the second substrate. A polymer dispersed liquid crystal layer is disposed between the transparent electrode and the reflection layer and is formed by exposure to an ultraviolet ray in a preselected wavelength range. A ratio of a transmissivity of the first filter for the ultraviolet ray to a transmissivity of the second filter for the ultraviolet ray is 3.0 or less.
    Type: Grant
    Filed: January 7, 1999
    Date of Patent: April 10, 2001
    Assignees: Seiko Instruments Inc., Seiko Precision Inc.
    Inventors: Teruo Ebihara, Shunichi Motte, Kaori Takano, Shigeru Sembonmatsu, Hiroshi Sakuma, Takakazu Fukuchi, Osamu Yamazaki, Masafumi Hoshino, Naotoshi Shino, Shuhei Yamamoto, Masanori Fujita
  • Patent number: 5990995
    Abstract: A reflection type liquid crystal display device comprises a pair of substrates having electrodes, a light scattering type liquid crystal layer interposed between the substrates, a reflection layer disposed over a rear surface of the light scattering type liquid crystal layer, and a light absorbing layer disposed over a rear surface of the reflection layer for absorbing a light passed through the reflection layer. The light scattering type liquid crystal layer changes into a scattering state or a transparent state in accordance with a change in a voltage level between the electrodes, and transmits 60% or more of incident light irrespective of the change in the voltage level between the electrodes. The reflection layer has a reflectivity within a range of 10 to 50% for reflecting a forward scattered light passed through the light scattering type liquid crystal layer.
    Type: Grant
    Filed: June 18, 1997
    Date of Patent: November 23, 1999
    Assignee: Seiko Instruments Inc.
    Inventors: Teruo Ebihara, Osamu Yamazaki, Shunichi Motte, Shigeru Senbonmatsu, Kaori Taniguchi, Naotoshi Shino, Shuhei Yamamoto, Hiroshi Sakama, Masafumi Hoshino, Takakazu Fukuchi
  • Patent number: 5770349
    Abstract: This invention allows the high image quality multicolor liquid crystal display to be manufactured by a simple method in which color filters are applied by patterning an insulating resist on a plurality of electrodes formed on a substrate, by forming color filters one after another by way of electro- deposition and by patterning a light shielding substance at gaps of the color filters by utilizing the color filter as masks.
    Type: Grant
    Filed: March 20, 1997
    Date of Patent: June 23, 1998
    Assignees: Seiko Instruments Inc., Sumitomo Chemical Co., Ltd.
    Inventors: Mitsuru Suginoya, Shunichi Motte, Takakazu Fukuchi, Hitoshi Kamamori, Yoshikatsu Okada, Akiko Sakurai
  • Patent number: 4956680
    Abstract: A thin film transistor having a shading layer for reducing optical leakage current. The shading layer is made essentially of opaque organic material.
    Type: Grant
    Filed: December 14, 1987
    Date of Patent: September 11, 1990
    Assignee: Seiko Instruments Inc.
    Inventors: Hideo Tanaka, Shunichi Motte
  • Patent number: 4895789
    Abstract: A method for manufacturing a non-linear resistive element array on a substrate, comprising: depositing a first conductive layer on the substrate and selectively forming the layer in a desired pattern; depositing a non-linear resistive layer on the first conductive layer; depositing a second conductive layer on the non-linear resistive layer; forming the second conductive layer in a desired pattern by etching process using a patterned resist layer as a mask; and forming the non-linear resistive layer in a desired pattern using the resist layer as a mask.
    Type: Grant
    Filed: March 29, 1988
    Date of Patent: January 23, 1990
    Assignee: Seiko Instruments Inc.
    Inventors: Shunichi Motte, Mitsuya Suzuki
  • Patent number: 4705358
    Abstract: Insulated-gate-field-effect transistors are disposed on an insulating substrate as a matrix. Each gate electrode of the transistors is covered with each gate insulating film and semiconductor film acting as a channel of the transistors, respectively.
    Type: Grant
    Filed: June 10, 1985
    Date of Patent: November 10, 1987
    Assignee: Seiko Instruments & Electronics Ltd.
    Inventors: Tsuneo Yamazaki, Shunichi Motte, Masafumi Shimbo
  • Patent number: 4599246
    Abstract: A thin film transistor array for a liquid crystal display device is produced by simultaneously forming gate electrodes and picture element electrodes; forming islands of a layered structure comprised of a gate insulating film, a thin semiconductor film and a light shielding film in a single masking step; and forming the gate, source and drain wiring metals in contact windows by the "lift-off" technique after using a resist film for opening the contact windows. Only three masking steps are required thereby enabling an increase in production yield and a lower production cost as compared to conventional techniques which typically require seven masking steps.
    Type: Grant
    Filed: October 29, 1984
    Date of Patent: July 8, 1986
    Assignee: Seiko Instruments & Electronics Ltd.
    Inventors: Toshihiko Harajiri, Shunichi Motte, Masafumi Shinbo
  • Patent number: 4306170
    Abstract: An AT-cut quartz resonator is disclosed, wherein the length l, the width w and the thickness t of the quartz crystal plate are respectively chosen in the directions of an electrical axis (X-axis), an optical axis (Z'-axis) and a mechanical axis (Y'-axis), the width-to-thickness ratio w/t is chosen in the range of 2.0 to 2.8 and the length-to-thickness ratio l/t is chosen less than 25. Consequently, an AT-cut quartz resonator of miniature size having high Q-values of the major mode and excellent frequency-temperature characteristics of the vibration frequency is realized.
    Type: Grant
    Filed: August 27, 1979
    Date of Patent: December 15, 1981
    Assignee: Kabushiki Kaisha Daini Seikosha
    Inventors: Shunichi Motte, Naoyuki Echigo, Shiro Yamashita, Tsuneo Kuwabara, Kunihiro Takahashi
  • Patent number: 4247797
    Abstract: A rectangular AT-cut quartz resonator comprising a quartz crystal plate rotated about 35.degree. around the X-axis, has dimensional ratios w/t and l/t respectively in the range of 3.1 to 3.7 and 14.5 to 16.2, where the length l, width w and thickness t are respectively along the X-axis, Z-axis, and Y-axis.
    Type: Grant
    Filed: April 25, 1979
    Date of Patent: January 27, 1981
    Assignee: Kabushiki Kaisha Daini Seikosha
    Inventors: Naoyuki Echigo, Shiro Yamashita, Tsuneo Kuwabara, Kunihiro Takahashi, Shunichi Motte