Patents by Inventor Shunichi Numata

Shunichi Numata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5633112
    Abstract: A photosensitive resin composition comprising (a) a polymer having carboxyl groups (b) a photoacid generator which generates an acid when irradiated with light, and (c) an aliphatic amine is capable of development with ease by use of a wide variety of aqueous solvents.
    Type: Grant
    Filed: October 7, 1994
    Date of Patent: May 27, 1997
    Assignees: Hitachi, Ltd., Hitachi Chemical Company, Ltd.
    Inventors: Takao Miwa, Yoshiaki Okabe, Mina Ishida, Akio Takahashi, Shunichi Numata
  • Patent number: 5606300
    Abstract: A superconducting magnet coil, an insulating layer, and a superconducting magnet which do not generate quenching under cooled and operational conditions are provided by using a fixing resin capable of suppressing microcrack generation in a resin layer which causes quenching.A superconducting magnet coil manufactured by winding a superconducting wire and fixing the wire with resin and a method for manufacturing thereof, wherein said resin is a low cooling restricted thermal stress and high toughness fixing resin having a release rate of elastic energy G.sub.IC at 4.2 K. of at least 250 J.multidot.m.sup.-2, and/or a stress intensity factor K.sub.IC of at least 1.5 MPa.multidot..sqroot.m, and/or a stress safety factor at 4.2 K. of at least 3, and an allowable defect size at least of 0.3 mm.The superconducting magnet coil manufactured in accordance with the present invention does not cause quenching because microcracks are not generated in said resin when the coil is cooled to the liquid helium temperature, i.e.
    Type: Grant
    Filed: January 31, 1996
    Date of Patent: February 25, 1997
    Assignee: Hitachi, Ltd.
    Inventors: Toru Koyama, Masao Suzuki, Yasuhiro Mizuno, Koo Honjo, Morimichi Umino, Shigeo Amagi, Shunichi Numata
  • Patent number: 5570506
    Abstract: Low-thermal-expansivity polyimides have a linear rigid skeleton, so that adhesion between perfectly cured low-thermal-expansivity polyimide films is very low. On the other hand, a film of a polyimide having a flexible skeleton shows high adhesiveness even after perfect curing, so that it is possible to enhance adhesion between the low-thermal-expansivity polyimide films by interposing a polyimide having a flexible skeleton. A flexible polyimide thin film is formed as a highly adhesive film on a low-thermal-expansivity polyimide film in a half-cured state, then metallic wiring is applied thereon, followed by formation of another highly adhesive thin film in a half-cured state, and then a low-thermal-expansivity polyimide film is further formed thereon. It is possible to provide a multilayer wiring structure which has improved adhesion between the low-thermal-expansivity polyimide film and the wiring pattern layer or the substrate.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: November 5, 1996
    Assignee: Hitachi, Ltd.
    Inventors: Rie Tawata, Shunichi Numata, Takao Miwa, Koji Fujisaki, Takayoshi Ikeda, Yoshiaki Okabe, Hisae Shimanoki
  • Patent number: 5350886
    Abstract: An LSI mounting substrate having a multilayered thin film wiring portion, with the thin film wiring portion being divided into wiring units each composed of a plurality of wiring layers, with the wirings between the units being electrically connected through connecting pads defined in the same surface as that of a surface conductive layer of the unit.
    Type: Grant
    Filed: February 25, 1991
    Date of Patent: September 27, 1994
    Assignee: Hitachi, Ltd.
    Inventors: Kunio Miyazaki, Yutaka Sugita, Akio Mukoh, Tadahiko Miyoshi, Osamu Miura, Akio Takahashi, Shunichi Numata, Satoru Ogihara, Kazuji Yamada, Hirokazu Inoue, Fumiyuki Kobayashi
  • Patent number: 5219706
    Abstract: There are disclosed a novel naphthalocyanine derivative represented by the general formula [I] or [II] shown below, a process for preparing said derivative, an optical information recording medium using said derivative, and a process for preparing thereof: ##STR1## wherein M is a metal, metal oxide, metal hydroxide and the like, R.sup.1 is an alkyl group of 1-22 carbon atoms, n is an integer of 1 to 4, and Y.sub.1 and Y.sub.2 aryloxy group and the like.
    Type: Grant
    Filed: January 21, 1992
    Date of Patent: June 15, 1993
    Assignee: Hitachi, Ltd.
    Inventors: Seiji Tai, Shigeru Hayashida, Nobuyuki Hayashi, Yasushi Iwakabe, Shunichi Numata, Noriyuki Kinjo, Susumu Era, Setsuo Kobayashi, Akio Mukoh, Yoshio Sato
  • Patent number: 5208066
    Abstract: A process of forming a patterned polyimide film includes the step of conversion of a polyimide precursor into polyimide. The improvement is imidizing the precursor by means of a chemical imidizing reagent. Typically a film of polyimide precursor is formed on a substrate, and mask which is negative with respect to the desired pattern is formed on the film. The film is contacted through the mask with a chemical imidizing reagent to effect imidization of unmasked portions, thereby forming polyimide. The mask and masked portions of the film are removed, leaving the desired polyimide pattern. High temperatures and harmful etchants can be avoided.
    Type: Grant
    Filed: April 30, 1992
    Date of Patent: May 4, 1993
    Assignee: Hitachi, Ltd.
    Inventors: Koji Fujisaki, Shunichi Numata, Takao Miwa, Takayoshi Ikeda, Hisae Shimanoki
  • Patent number: 5194579
    Abstract: Polyimides represented by general formula (I), (wherein Ar.sub.1 and Ar.sub.2 each represents an aromatic ring-containing group, Cf represents a fluorinated alkyl group directly bonded to Ar.sub.1, and m.gtoreq.1), and polyamide acids as their percursors. The polyimides have excellent humidity resistance and heat resistance, thus being useful as coating materials for semiconductor chips and insulating films for multi-layered wiring.
    Type: Grant
    Filed: November 5, 1990
    Date of Patent: March 16, 1993
    Assignees: Hitachi, Ltd., Hitachi Chemical Co., Ltd.
    Inventors: Shunichi Numata, Kooji Fujisaki, Noriyuki Kinjo
  • Patent number: 5183838
    Abstract: An acid dianhydride complex which is characterized in anti-hydrolysis, good stability, and high solubility in an organic solvent, is prepared by a reaction of a basic organic compound having a donor number of at least 20 and being free from an active hydrogen atom in the molecule and a carboxylic dianhydride compound.
    Type: Grant
    Filed: July 2, 1991
    Date of Patent: February 2, 1993
    Assignees: Hitachi, Ltd., Hitachi Chemical Company, Ltd.
    Inventors: Takao Miwa, Takayoshi Ikeda, Shunichi Numata, Koji Fujisaki, Hisae Shimanoki
  • Patent number: 5133989
    Abstract: The present invention provides a process for producing a metal-polyimide composite material such as a wiring board. In production thereof, deterioration of polyamide film due to oxidation during imidization of a polyimide precursor in contact with metal such as copper or silver can be prevented. The present invention is characterized by using a polyimide precursor having an acidic functional group which is masked. Examples of the polyamide precursor are polyamic acid epoxy adducts, amido polyamic acids, silylated polyamic acids, etc.
    Type: Grant
    Filed: September 27, 1989
    Date of Patent: July 28, 1992
    Assignee: Hitachi, Ltd.
    Inventors: Shunichi Numata, Takao Miwa, Takayoshi Ikeda, Koji Fujisaki, Hisae Shimanoki, Kunio Miyazaki, Osamu Miura, Ryuji Watanabe, Toshio Miyamoto, Yukio Okoshi
  • Patent number: 5021563
    Abstract: A metal naphthalocyanine derivative and process for producing said derivative which is represented by the following formula (I): ##STR1## wherein M represents germanium or tin; L and L' each independently represent a halogen, a hydroxyl group, an alkyl group, an alkoxy group or a siloxy group of the formula R.sub.1 R.sub.2 R.sub.3 SiO-- (wherein R.sub.1, R.sub.2 and R.sub.3 each independently represent a hydrogen atom, an alkyl group, an alkoxy group or an aryl group).
    Type: Grant
    Filed: October 6, 1989
    Date of Patent: June 4, 1991
    Assignees: Hitachi Chemical Company, Ltd., Hitachi, Ltd.
    Inventors: Shigeru Hayashida, Seiji Tai, Nobuyuki Hayashi, Yasushi Iwakabe, Noriyuki Kinjo, Shunichi Numata
  • Patent number: 4970577
    Abstract: A semiconductor chip module includes semiconductor chips each of which has contacts on its entire front face. A multi-layered organic circuit board having a small dielectric constant is provided for mounting the semiconductor chips. Intermediate ceramic substrates having the same thermal expansion coefficient as that of the semiconductor chip, are also provided. Each such intermediate ceramic substrate has contacts on its front and back faces corresponding to those of the semiconductor chip. These contacts are electrically connected directly in a one-to-one relationship. The contacts on the semiconductor chip and the corresponding ones on the front face of the intermediate ceramic substrates are connected by solder. The contacts on the back face of the intermediate ceramic substrate and the corresponding contacts on the front face of the multi-layered ceramic circuit board are connected by respective conductive pins having a predetermined flexibility and rigidity through a predetermined gap therebetween.
    Type: Grant
    Filed: April 12, 1989
    Date of Patent: November 13, 1990
    Assignee: Hitachi, Ltd.
    Inventors: Satoru Ogihara, Shunichi Numata, Kunio Miyazaki, Takashi Yokoyama, Ken Takahashi, Tasao Soga, Kazuji Yamada, Hiroichi Shinohara, Hideo Suzuki
  • Patent number: 4933744
    Abstract: Resin encapsulated electronic devices are provided by encapsulating so-called flat-shaped, plate-like, or angular-shaped electronic devices with a resin composition containing rubber-like particles preferably having an average particle size of 150 .mu.m or less. In the course of production of said resin encapsulated electronic devices, no crack is produced in the electronic devices by the stress from the outside, and after production, said resin encapsulated electronic devices are amazingly lessened in formation of cracks by thermal stress and have high reliability.
    Type: Grant
    Filed: February 1, 1988
    Date of Patent: June 12, 1990
    Assignee: Hitachi, Ltd.
    Inventors: Tadanori Segawa, Hiroshi Suzuki, Masahiro Kitamura, Shunichi Numata, Kunihiko Nishi
  • Patent number: 4886721
    Abstract: Disclosed are an electrophotographic plate comprising a photoconductive layer containing an organic photoconductive substance on an electroconductive support, characterized in that said photoconductive layer has a film containing as the organic photoconductive substance a metal naphthalocyanine derivative represented by the formula (I): ##STR1## wherein M represents germanium or tin; L and L' each independently represent a halogen, a hydroxyl group, an alkyl group, an alkoxy group or a siloxy group of the formula R.sub.1 R.sub.2 R.sub.3 SiO-- (wherein R.sub.1, R.sub.2 and R.sub.3 each independently represent a hydrogen atom, an alkyl group, an alkoxy group or an aryl group),a metal naphthalocyanine derivative defined above and a process for producing the same.
    Type: Grant
    Filed: January 25, 1988
    Date of Patent: December 12, 1989
    Assignees: Hitachi Chemical Company, Ltd., Hitachi, Ltd.
    Inventors: Shigeru Hayashida, Seiji Tai, Nobuyuki Hayashi, Yasushi Iwakabe, Noriyuki Kinjo, Shunichi Numata
  • Patent number: 4886573
    Abstract: In a process for forming a wiring conductor of Cu, Al, Au or the like on a wiring substrate, polyimide-based resin having the following unit structural formula is used as a lift-off material. ##STR1## wherein R.sub.1 : ##STR2## R.sub.2 : ##STR3## n is an integer of 15,000 to 30,000. This lift-off material has very good etching susceptibility and can be selectively lifted off with an etching solution of a mixture of hydrazine and ethylene diamine from a lower polyimide layer having R.sub.1 : ##STR4## R.sub.2 : ##STR5## .
    Type: Grant
    Filed: August 19, 1987
    Date of Patent: December 12, 1989
    Assignee: Hitachi, Ltd.
    Inventors: Hiroshi Watanabe, Osamu Miura, Kunio Miyazaki, Shunichi Numata, Kanji Otsuka
  • Patent number: 4781439
    Abstract: A liquid crystal display element comprising a pair of substrates, a pair of electrodes provided on the respective substrates, at least one of which is transparent and a liquid crystal layer disposed between said substrates, the liquid crystal layer comprising a nematic liquid crystal, which exhibits a positive dielectric constant anisotropy and contains an optically active substance, the liquid crystal moleccule orientation direction in the liquid crystal layer is twisted in the range of 200.degree. to 250.degree. from the one substrate surface toward the other substrate surface so as to form a helical structure therein. A polyimide orientation film is provided between the electrodes and the liquid crystal layer. The polyimide orientation film is one made of a polyimide prepared by reacting a diamine compound having a long-chain hydrocarbon group or a diamine compound having a trifluoromethyl group with a tetracarboxylic dianhydride and causes a pretilt angle of at least 3.degree.
    Type: Grant
    Filed: January 22, 1987
    Date of Patent: November 1, 1988
    Assignee: Hitachi, Ltd.
    Inventors: Hisao Yokokura, Tadao Nakata, Susumu Era, Yasuo Hanawa, Kishiro Iwasaki, Teruo Kitamura, Akio Mukoh, Toshikazu Narahara, Yasuhiko Kando, Shunichi Numata, Kooji Fujisaki
  • Patent number: 4760126
    Abstract: A polyimide or polyamic acid synthesized from a diamine, which may be fluorinated, and a dianhydride of the following formula: ##STR1## where R.sub.f =perfluoroalkylene and Y.sub.1 and Y.sub.2 are independently oxy-carbonyl or thiocarbonyl.
    Type: Grant
    Filed: September 8, 1986
    Date of Patent: July 26, 1988
    Assignees: Hitachi, Ltd., Hitachi Chemical Co. Ltd.
    Inventors: Shunichi Numata, Koji Fujisaki, Noriyuki Kinjo
  • Patent number: 4759958
    Abstract: A method for forming a polyimide film on a substrate surface by chemical vapor deposition comprises evaporating an aromatic monomer compound having one amino group and two adjacent carboxyl groups or its derivative group, such as esters of 4-amino phthalic acid, and 4-(p-anilino) phthalic acid, thus a high strength polyimide is obtained represented by the general formula having its imide groups being unidirectionally arranged in its backbone chain: ##STR1## wherein R is nil or divalent aliphatic or aromatic group and n is an integer.
    Type: Grant
    Filed: July 23, 1987
    Date of Patent: July 26, 1988
    Assignee: Hitachi, Ltd.
    Inventors: Shunichi Numata, Ikeda Takayoshi, Koji Fujisaki, Takao Miwa, Noriyuki Kinjo
  • Patent number: 4758875
    Abstract: Disclosed is a resin encapsulated semiconductor memory device comprising a semiconductor memory element, a package encapsulating the memory element and an .alpha.-rays shielding layer made from a water-resistant aromatic polyimide polymer, interposed between the memory element and the package, the aromatic polyimide polymer having a saturated water absorption rate of 1% or less. The polyimide polymer is exemplified as the polymer having the following recurring units: ##STR1## wherein R is an aliphatic or aromatic group; R.sub.1 and R.sub.2 are independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or CF.sub.3 ; and R.sub.3 to R.sub.6 are independently a hydrogen atom, a halogen atom or an alkyl group having 1 to 4 carbon atoms. The disclosure is also concerned with resin encapsulated semiconductor devices in which the aromatic polyimide polymer of low water absorption is used as an insulating layer or passivation film.
    Type: Grant
    Filed: May 22, 1981
    Date of Patent: July 19, 1988
    Assignees: Hitachi, Ltd., Hitachi Chemical Co. Ltd.
    Inventors: Koji Fujisaki, Akio Nishikawa, Shunichi Numata, Hiroshi Suzuki, Takeshi Komaru, Daisuke Makino
  • Patent number: 4641924
    Abstract: A liquid crystal device comprising a thermal writing type liquid crystal, an electrode for generating heat necessary for said thermal writing, and a support for supporting said liquid crystal and said electrode, wherein a material having a coefficient of thermal expansion lying between the coefficient of thermal expansion of said electrode and that of said support is arranged between said electrode and said support, whereby said electrode for generating heat can be prevented from being degraded by failure or peeling from the support due to thermal stress.
    Type: Grant
    Filed: January 31, 1985
    Date of Patent: February 10, 1987
    Assignee: Hitachi, Ltd.
    Inventors: Yoshiharu Nagae, Shunichi Numata, Noriyuki Kinjo, Katuyuki Funahata
  • Patent number: RE34885
    Abstract: A liquid crystal display element comprising a pair of substrates, a pair of electrodes provided on the respective substrates, at least one of which is transparent and a liquid crystal layer disposed between said substrates, the liquid crystal layer comprising a nematic liquid crystal, which exhibits a positive dielectric constant anisotropy and contains an optically active substance, the liquid crystal moleccule orientation direction in the liquid crystal layer is twisted in the range of 200.degree. to 250.degree. from the one substrate surface toward the other substrate surface so as to form a helical structure therein. A polyimide orientation film is provided between the electrodes and the liquid crystal layer. The polyimide orientation film is one made of a polyimide prepared by reacting a diamine compound having a long-chain hydrocarbon group or a diamine compound having a trifluoromethyl group with a tetracarboxylic dianhydride and causes a pretilt angle of at least 3.degree.
    Type: Grant
    Filed: June 29, 1992
    Date of Patent: March 28, 1995
    Assignee: Hitachi, Ltd.
    Inventors: Hisao Yokokura, Tadao Nakata, Susumu Era, Yasuo Hanawa, Kishiro Iwasaki, Teruo Kitamura, Akio Mukoh, Toshikazu Narahara, Yasuhiko Kando, Shunichi Numata, Kooji Fujisaki