Patents by Inventor Shunsuke Adachi

Shunsuke Adachi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10355136
    Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: July 16, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akiharu Miyanaga, Yasuharu Hosaka, Toshimitsu Obonai, Junichi Koezuka, Motoki Nakashima, Masahiro Takahashi, Shunsuke Adachi, Takuya Hirohashi
  • Patent number: 10121903
    Abstract: A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.
    Type: Grant
    Filed: February 23, 2017
    Date of Patent: November 6, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasutaka Nakazawa, Masami Jintyou, Junichi Koezuka, Kenichi Okazaki, Takuya Hirohashi, Shunsuke Adachi
  • Publication number: 20180308995
    Abstract: A photoelectric conversion element comprises: a first electrode layer 12; a compound-based photoelectric conversion layer 13 disposed on the first electrode layer 12; a buffer layer 15 disposed on the compound-based photoelectric conversion layer 13 comprising a mixed crystal of ZnO and ZnS, wherein a ratio of the number of S atoms to the number of Zn atoms is in a range of 0.290 to 0.493; and a second electrode layer 16 disposed on the buffer layer 15.
    Type: Application
    Filed: September 28, 2016
    Publication date: October 25, 2018
    Applicant: Solar Frontier K.K.
    Inventors: Shunsuke ADACHI, Rui KAMADA, Homare HIROI
  • Patent number: 10026966
    Abstract: A lithium secondary battery which has high charge-discharge capacity, can be charged and discharged at high speed, and has little deterioration in battery characteristics due to charge and discharge is provided. A negative electrode includes a current collector and a negative electrode active material layer. The current collector includes a plurality of protrusion portions extending in a substantially perpendicular direction and a base portion connected to the plurality of protrusion portions. The protrusion portions and the base portion are formed using the same material containing titanium. A top surface of the base portion and at least a side surface of the protrusion portion are covered with the negative electrode active material layer. The negative electrode active material layer may be covered with graphene.
    Type: Grant
    Filed: December 3, 2012
    Date of Patent: July 17, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuya Kakehata, Ryota Tajima, Teppei Oguni, Takeshi Osada, Shunpei Yamazaki, Shunsuke Adachi, Takuya Hirohashi
  • Publication number: 20180175210
    Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.
    Type: Application
    Filed: February 14, 2018
    Publication date: June 21, 2018
    Inventors: Akiharu MIYANAGA, Yasuharu HOSAKA, Toshimitsu OBONAI, Junichi KOEZUKA, Motoki NAKASHIMA, Masahiro TAKAHASHI, Shunsuke ADACHI, Takuya HIROHASHI
  • Patent number: 9989657
    Abstract: A readout circuit for reading out an output current from a photoelectric conversion element which collectively outputs currents generated in a plurality of pixels, each of which includes an avalanche photodiode, includes a current mirror circuit configured to receive the output current and output first and second currents having magnitudes in proportion to the output current, a photon counting circuit configured to count the number of photons incident on the photoelectric conversion element on the basis of the first current, an integral circuit configured to integrate the second current to generate a voltage signal, and a signal processing unit configured to determine a magnitude of light incident on the photoelectric conversion element on the basis of a counting result output from the photon counting circuit and a magnitude of the voltage signal output from the integral circuit.
    Type: Grant
    Filed: October 27, 2016
    Date of Patent: June 5, 2018
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Shigeyuki Nakamura, Tsuyoshi Ohta, Michito Hirayanagi, Hiroki Suzuki, Shunsuke Adachi
  • Patent number: 9939535
    Abstract: A Compton camera includes a scattering detection unit, an absorption detection unit, a signal processing unit, a first shield unit, and a second shield unit. The scattering detection unit detects Compton scattering of incident radiation emitted from a radiation source. The absorption detection unit detects absorption of incident radiation that has undergone Compton scattering at the scattering detection unit. The signal processing unit obtains an image of the radiation source based on coincident detection events of Compton scattering of radiation at the scattering detection unit and absorption of radiation at the absorption detection unit. The first and second shield units are provided between the scattering detection unit and the absorption detection unit. The first shield unit selectively allows forward-scattered radiation to pass and selectively blocks back-scattered radiation.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: April 10, 2018
    Assignees: WASEDA UNIVERSITY, HAMAMATSU PHOTONICS K.K.
    Inventors: Jun Kataoka, Toru Nishiyama, Shinji Ohsuka, Michito Hirayanagi, Shunsuke Adachi, Tetsuya Uchiyama
  • Patent number: 9911853
    Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.
    Type: Grant
    Filed: August 10, 2016
    Date of Patent: March 6, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akiharu Miyanaga, Yasuharu Hosaka, Toshimitsu Obonai, Junichi Koezuka, Motoki Nakashima, Masahiro Takahashi, Shunsuke Adachi, Takuya Hirohashi
  • Patent number: 9774034
    Abstract: To increase the amount of lithium ions that can be received in and released from a positive electrode active material to achieve high capacity and high energy density of a secondary battery. A lithium manganese oxide particle includes a first region and a second region. The valence number of manganese in the first region is lower than the valence number of manganese in the second region. The lithium manganese oxide has high structural stability and high capacity characteristics.
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: September 26, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro Kawakami, Mayumi Mikami, Shunsuke Adachi, Shuhei Yoshitomi, Teruaki Ochiai, Yumiko Yoneda, Yohei Momma, Satoshi Seo
  • Publication number: 20170162718
    Abstract: A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.
    Type: Application
    Filed: February 23, 2017
    Publication date: June 8, 2017
    Inventors: Shunpei YAMAZAKI, Yasutaka NAKAZAWA, Masami JINTYOU, Junichi KOEZUKA, Kenichi OKAZAKI, Takuya HIROHASHI, Shunsuke ADACHI
  • Patent number: 9673454
    Abstract: With a small amount of a conductive additive, an electrode for a storage battery including an active material layer which is highly filled with an active material is provided. The use of the electrode enables fabrication of a storage battery having high capacity per unit volume of the electrode. By using graphene as a conductive additive in an electrode for a storage battery including a positive electrode active material, a network for electron conduction through graphene is formed. Consequently, the electrode can include an active material layer in which particles of an active material are electrically connected to each other by graphene. Therefore, graphene is used as a conductive additive in an electrode for a sodium-ion secondary battery including an active material with low electric conductivity, for example, an active material with a band gap of 3.0 eV or more.
    Type: Grant
    Filed: February 14, 2014
    Date of Patent: June 6, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tamae Moriwaka, Satoshi Seo, Takuya Hirohashi, Kunio Hosoya, Shunsuke Adachi
  • Publication number: 20170123082
    Abstract: A readout circuit for reading out an output current from a photoelectric conversion element which collectively outputs currents generated in a plurality of pixels, each of which includes an avalanche photodiode, includes a current mirror circuit configured to receive the output current and output first and second currents having magnitudes in proportion to the output current, a photon counting circuit configured to count the number of photons incident on the photoelectric conversion element on the basis of the first current, an integral circuit configured to integrate the second current to generate a voltage signal, and a signal processing unit configured to determine a magnitude of light incident on the photoelectric conversion element on the basis of a counting result output from the photon counting circuit and a magnitude of the voltage signal output from the integral circuit.
    Type: Application
    Filed: October 27, 2016
    Publication date: May 4, 2017
    Inventors: Shigeyuki NAKAMURA, Tsuyoshi OHTA, Michito HIRAYANAGI, Hiroki SUZUKI, Shunsuke ADACHI
  • Patent number: 9583601
    Abstract: A method for manufacturing a semiconductor device including a transistor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer to form a stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes; and regions in the oxide layer in contact with the source and drain electrodes are heat treated so as to have a low resistivity.
    Type: Grant
    Filed: January 21, 2016
    Date of Patent: February 28, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasutaka Nakazawa, Masami Jintyou, Junichi Koezuka, Kenichi Okazaki, Takuya Hirohashi, Shunsuke Adachi
  • Publication number: 20160351721
    Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.
    Type: Application
    Filed: August 10, 2016
    Publication date: December 1, 2016
    Inventors: Akiharu MIYANAGA, Yasuharu HOSAKA, Toshimitsu OBONAI, Junichi KOEZUKA, Motoki NAKASHIMA, Masahiro TAKAHASHI, Shunsuke ADACHI, Takuya HIROHASHI
  • Patent number: 9443987
    Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.
    Type: Grant
    Filed: August 11, 2014
    Date of Patent: September 13, 2016
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Akiharu Miyanaga, Yasuharu Hosaka, Toshimitsu Obonai, Junichi Koezuka, Motoki Nakashima, Masahiro Takahashi, Shunsuke Adachi, Takuya Hirohashi
  • Publication number: 20160238719
    Abstract: A Compton camera includes a scattering detection unit, an absorption detection unit, a signal processing unit, a first shield unit, and a second shield unit. The scattering detection unit detects Compton scattering of incident radiation emitted from a radiation source. The absorption detection unit detects absorption of incident radiation that has undergone Compton scattering at the scattering detection unit. The signal processing unit obtains an image of the radiation source based on coincident detection events of Compton scattering of radiation at the scattering detection unit and absorption of radiation at the absorption detection unit. The first and second shield units are provided between the scattering detection unit and the absorption detection unit. The first shield unit selectively allows forward-scattered radiation to pass and selectively blocks back-scattered radiation.
    Type: Application
    Filed: September 26, 2014
    Publication date: August 18, 2016
    Inventors: Jun KATAOKA, Toru NISHIYAMA, Shinji OHSUKA, Michito HIRAYANAGI, Shunsuke ADACHI, Tetsuya UCHIYAMA
  • Publication number: 20160164089
    Abstract: The amount of lithium ions that can be received and released in and from a positive electrode active material is increased, and high capacity and high energy density of a secondary battery are achieved. Provided is a lithium-manganese composite oxide represented by LixMnyMzOw, where M is a metal element other than Li and Mn, or Si or P, and y, z, and w satisfy 0?x/(y+z)<2, y>0, z>0, 0.26?(y+z)/w<0.5, and 0.2<z/y<1.2. The lithium manganese composite oxide has high structural stability and high capacity.
    Type: Application
    Filed: February 10, 2016
    Publication date: June 9, 2016
    Inventors: Takahiro KAWAKAMI, Shuhei YOSHITOMI, Teruaki OCHIAI, Yumiko SAITO, Yohei MOMMA, Satoshi SEO, Mayumi MIKAMI, Shunsuke ADACHI
  • Publication number: 20160141397
    Abstract: A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.
    Type: Application
    Filed: January 21, 2016
    Publication date: May 19, 2016
    Inventors: Shunpei YAMAZAKI, Yasutaka NAKAZAWA, Masami JINTYOU, Junichi KOEZUKA, Kenichi OKAZAKI, Takuya HIROHASHI, Shunsuke ADACHI
  • Patent number: 9293236
    Abstract: The amount of lithium ions that can be received and released in and from a positive electrode active material is increased, and high capacity and high energy density of a secondary battery are achieved. Provided is a lithium-manganese composite oxide represented by LixMnyMzOw, where M is a metal element other than Li and Mn, or Si or P, and y, z, and w satisfy 0?x/(y+z)<2, y>0, z>0, 0.26?(y+z)/w<0.5, and 0.2<z/y<1.2. The lithium manganese composite oxide has high structural stability and high capacity.
    Type: Grant
    Filed: June 30, 2014
    Date of Patent: March 22, 2016
    Assignee: SEMIDONCONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Takahiro Kawakami, Shuhei Yoshitomi, Teruaki Ochiai, Yumiko Saito, Yohei Momma, Satoshi Seo, Mayumi Mikami, Shunsuke Adachi
  • Patent number: 9246011
    Abstract: A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.
    Type: Grant
    Filed: November 26, 2013
    Date of Patent: January 26, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yasutaka Nakazawa, Masami Jintyou, Junichi Koezuka, Kenichi Okazaki, Takuya Hirohashi, Shunsuke Adachi