Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a polishing table configured to hold a polishing pad for polishing a substrate, and to rotate the polishing pad. The apparatus further includes a dressing module configured to hold a dresser for dressing the polishing pad, and to dress a surface of the polishing pad by sweeping the polishing pad with the dresser while rotating the dresser. The apparatus further includes a controller configured to control a number of revolutions of the polishing table based on a position of the dresser to the polishing table, while the polishing pad is dressed.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a polishing table configured to hold a polishing pad for polishing a substrate, and to rotate the polishing pad. The apparatus further includes a dressing module configured to hold a dresser for dressing the polishing pad, and to dress a surface of the polishing pad by sweeping the polishing pad with the dresser while rotating the dresser. The apparatus further includes a controller configured to control a number of revolutions of the polishing table based on a position of the dresser to the polishing table, while the polishing pad is dressed.

Abstract: A cleaning member configured to clean a semiconductor substrate by relatively sliding over a surface of the semiconductor substrate is disclosed. The cleaning member includes a holding portion; and a brush portion supported by the holding portion and including an ion exchange resin.

Abstract: A polish pad for use in a chemical mechanical polishing including a polish layer having a polish surface configured to be capable of contacting a polish object, the polish layer including a coolant.

Abstract: A method of fabricating a semiconductor device, includes forming an amorphous silicon film above a semiconductor substrate, partially removing the amorphous silicon film and partially removing the semiconductor substrate, thereby forming an element isolation trench in a surface of the semiconductor substrate, forming an insulating film above the amorphous silicon film so that the element isolation trench is filled with the insulating film, polishing the insulating film by a chemical-mechanical polishing method with the amorphous silicon film serving as a stopper, thereby planarizing an upper surface of the insulating film, and thermally-treating the amorphous silicon film, thereby converting the amorphous silicon film to a polysilicon film after polishing the insulating film.

Abstract: A nonvolatile semiconductor storage device is disclosed. The nonvolatile semiconductor storage device includes a semiconductor substrate including a surface layer; an element isolation insulating film isolating the surface layer of the semiconductor device into a plurality of active regions; a first gate insulating film formed above the active regions; a charge storing layer formed above the first gate insulating film and including a silicon layer containing an upper layer selectively doped with carbon; a second gate insulating film formed above the charge storing layer; and a control gate electrode formed above the second gate insulating film.

Abstract: Disclosed is a method of manufacturing a semiconductor device, which includes forming an insulating film above a semiconductor substrate having a recess and stopper film formed above the semiconductor substrate excluding the recess, thereby filling the recess with the insulating film, performing a first polishing by polishing the insulating film by means of a chemical mechanical polishing method using a first polishing liquid containing cerium oxide and first anionic surfactant, thereby obtaining a flattened surface, and performing a second polishing by polishing the flattened insulating film using a second polishing liquid containing cerium oxide and a second anionic surfactant having a smaller molecular weight than that of the first anionic surfactant under a polishing condition which differs from that of the first polishing, thereby exposing the stopper film.

Abstract: A method of fabricating a semiconductor device, includes forming an amorphous silicon film above a semiconductor substrate, partially removing each of the amorphous silicon film and the semiconductor substrate, thereby forming an element isolation trench in a surface of the semiconductor substrate, forming an insulating film above the amorphous silicon film so that the element isolation trench is filled with the insulating film, polishing the insulating film by a chemical-mechanical polishing method with the amorphous silicon film serving as a stopper, thereby planarizing an upper surface of the insulating film, and thermally-treating the amorphous silicon film, thereby converting to a polysilicon film after polishing the insulating film.

Abstract: Disclosed is a method of manufacturing a semiconductor device, which includes forming an insulating film above a semiconductor substrate having a recess and stopper film formed above the semiconductor substrate excluding the recess, thereby filling the recess with the insulating film, performing a first polishing by polishing the insulating film by means of a chemical mechanical polishing method using a first polishing liquid containing cerium oxide and first anionic surfactant, thereby obtaining a flattened surface, and performing a second polishing by polishing the flattened insulating film using a second polishing liquid containing cerium oxide and a second anionic surfactant having a smaller molecular weight than that of the first anionic surfactant under a polishing condition which differs from that of the first polishing, thereby exposing the stopper film.

Abstract: A polishing liquid is provided, which includes abrasive grains and a surfactant. The abrasive grains contain a first colloidal silica having an average primary particle diameter of 45-80 nm and a second colloidal silica having an average primary particle diameter of 10-25 nm. The weight w1 of the first colloidal silica and the weight w2 of the second colloidal silica satisfy the relationship represented by the following expression 1. 0.63?w1/(w1+w2)?0.

Abstract: A polishing method includes polishing a surface to be polished of a target object by using a polishing pad in which a cutout part been formed by cutting out a polishing surface from an outer circumferential end toward an inner part, and after polishing, separating the target object from the polishing pad at a position in contact with the cutout part.