Patents by Inventor Shunsuke NOZU

Shunsuke NOZU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180175589
    Abstract: Provided is a distributed feed back semiconductor laser including a phase shift part capable of obtaining an excellent single-mode yield and a high luminous efficiency. A diffraction grating (105) is formed so as to extend in a guiding direction of a resonator between an end surface at which a low reflective film (111) is formed and an end surface at which a high reflective film (110) is formed. In diffraction grating (105) a plurality of phase shift parts (106) that discontinuously change a phase of the diffraction grating (105) in a predetermined range separated from the end surface at which the low reflective film (111) is formed are disposed.
    Type: Application
    Filed: October 22, 2017
    Publication date: June 21, 2018
    Inventors: Shunsuke NOZU, Yoshiharu MUROYA
  • Publication number: 20180047877
    Abstract: A transparent electrode is made of a first transparent electrode and a second transparent electrode containing a metal atom whose concentration is 10 wt % or less. The first transparent electrode is provided in a region which is overlapped with a p-side pad electrode when seen in a plane view, and the second transparent electrode is provided in a region except for the region which is overlapped with the p-side pad electrode when seen in the plane view. an electric current injected from the p-side pad electrode is diffused into the second transparent electrode, and is injected efficiently into an active layer in a region except for the region which is overlapped with the p-side pad electrode when seen in the plane view. Therefore, the luminous efficiency increases. Also, a contact resistance between the second transparent electrode and the p-type contact layer is low, the element resistance decreases.
    Type: Application
    Filed: October 30, 2017
    Publication date: February 15, 2018
    Applicant: Renesas Electronics Corporation
    Inventor: Shunsuke NOZU
  • Patent number: 9831389
    Abstract: A transparent electrode is made of a first transparent electrode and a second transparent electrode containing a metal atom whose concentration is 10 wt % or less. The first transparent electrode is provided in a region which is overlapped with a p-side pad electrode when seen in a plane view, and the second transparent electrode is provided in a region except for the region which is overlapped with the p-side pad electrode when seen in the plane view. an electric current injected from the p-side pad electrode is diffused into the second transparent electrode, and is injected efficiently into an active layer in a region except for the region which is overlapped with the p-side pad electrode when seen in the plane view. Therefore, the luminous efficiency increases. Also, a contact resistance between the second transparent electrode and the p-type contact layer is low, the element resistance decreases.
    Type: Grant
    Filed: October 3, 2014
    Date of Patent: November 28, 2017
    Assignee: Renesas Electronics Corporation
    Inventor: Shunsuke Nozu
  • Publication number: 20150221829
    Abstract: A transparent electrode is made of a first transparent electrode and a second transparent electrode containing a metal atom whose concentration is 10 wt % or less. The first transparent electrode is provided in a region which is overlapped with a p-side pad electrode when seen in a plane view, and the second transparent electrode is provided in a region except for the region which is overlapped with the p-side pad electrode when seen in the plane view. an electric current injected from the p-side pad electrode is diffused into the second transparent electrode, and is injected efficiently into an active layer in a region except for the region which is overlapped with the p-side pad electrode when seen in the plane view. Therefore, the luminous efficiency increases. Also, a contact resistance between the second transparent electrode and the p-type contact layer is low, the element resistance decreases.
    Type: Application
    Filed: October 3, 2014
    Publication date: August 6, 2015
    Applicant: Renesas Electronics Corporation
    Inventor: Shunsuke NOZU
  • Patent number: 8599894
    Abstract: Provided are a semiconductor laser manufacturing method and a semiconductor laser with a low device resistance. First, an active layer is deposited above a GaN substrate of a first conductivity type. A first guide layer made of GaN of a second conductivity type is deposited above the active layer. An AlN layer is deposited on the first guide layer. An opening is formed in the AlN layer. A first cladding layer made of a group-III nitride semiconductor of the second conductivity type is formed on the AlN layer and the first guide layer exposed through the opening such that a first growth rate at a start of growth on the first guide layer exposed through the opening becomes greater than a second growth rate at a start of growth on the AlN layer. A contact layer of the second conductivity type is formed on the first cladding layer.
    Type: Grant
    Filed: May 29, 2012
    Date of Patent: December 3, 2013
    Assignee: Renesas Electronics Corporation
    Inventor: Shunsuke Nozu
  • Publication number: 20120307854
    Abstract: Provided are a semiconductor laser manufacturing method and a semiconductor laser with a low device resistance. First, an active layer is deposited above a GaN substrate of a first conductivity type. A first guide layer made of GaN of a second conductivity type is deposited above the active layer. An AlN layer is deposited on the first guide layer. An opening is formed in the AlN layer. A first cladding layer made of a group-III nitride semiconductor of the second conductivity type is formed on the AlN layer and the first guide layer exposed through the opening such that a first growth rate at a start of growth on the first guide layer exposed through the opening becomes greater than a second growth rate at a start of growth on the AlN layer. A contact layer of the second conductivity type is formed on the first cladding layer.
    Type: Application
    Filed: May 29, 2012
    Publication date: December 6, 2012
    Inventor: Shunsuke NOZU