Abstract: A moving device includes an imaging unit, an acquiring unit, a determining unit and an imaging control unit. The acquiring unit is configured to acquire a state at a time when the moving device is released from a user. The determining unit is configured to determine an imaging manner to control the imaging unit after the time of being released, based on the state acquired by the acquiring unit. The imaging control unit is configured to control the imaging unit in the imaging manner determined by the determining unit.

Abstract: The gate electrode is provided on the gate insulating film. The interlayer insulating film is provided to cover the gate electrode. The interlayer insulating film includes a first insulating film which is in contact with the gate electrode, contains silicon atoms, and contains neither phosphorus atoms nor boron atoms, a second insulating film which is provided on the first insulating film and contains silicon atoms and at least one of phosphorus atoms and boron atoms, and a third insulating film which contains silicon atoms and contains neither phosphorus atoms nor boron atoms. The second insulating film has a first surface which is in contact with the first insulating film, a second surface opposite to the first surface, and a third surface which connects the first surface and the second surface. The third insulating film is in contact with at least one of the second surface and the third surface.

Abstract: A method for manufacturing a silicon carbide semiconductor device includes preparing a silicon carbide layer including an n-type region having an n conductivity type and a p-type region having a p conductivity type, forming a material layer containing titanium, aluminum, and silicon on the n-type region and the p-type region, and forming an electrode layer in contact with the n-type region and the p-type region by heating the material layer. In forming a material layer, composition of the material layer is determined such that a point (x, y, z) (x, y, and z each being a numeric value greater than 0) representing a composition ratio among titanium, aluminum, and silicon is included in a first triangular pyramidal region having four points of the origin (0, 0, 0), a point (1, 2, 2), a point (2, 1, 2) and a point (2, 2, 1) as vertices.

Abstract: A silicon carbide semiconductor device includes a silicon carbide semiconductor layer, a gate insulating film formed on the silicon carbide semiconductor layer, and a gate electrode provided on the gate insulating film, wherein the gate electrode has a polysilicon layer at least on a side of an interface with the gate insulating film, and the gate insulating film has an oxide film derived from the polysilicon layer, at an interface between the gate insulating film and the polysilicon layer of the gate electrode.

Abstract: An insulating layer is formed on a substrate made of silicon carbide. By performing etching using a mask layer formed on the insulating layer, a contact hole is formed in the insulating layer to expose a contact region, which is a portion of a main surface of the substrate. The step of forming the contact hole includes a step of providing the contact region with a surface roughness Ra of not less than 0.5 nm. An electrode layer is formed in contact with the contact region. By heating the electrode layer and the substrate, siliciding reaction is caused between the electrode layer and the contact region.

Abstract: A carbon material for a non-aqueous secondary battery containing a graphite capable of occluding and releasing lithium ions, and having a cumulative pore volume at pore diameters in a range of 0.01 ?m to 1 ?m of 0.08 mL/g or more, a roundness, as determined by flow-type particle image analysis, of 0.88 or greater, and a pore diameter to particle diameter ratio (PD/d50 (%)) of 1.8 or less, the ratio being given by equation (1A): PD/d50 (%)=mode pore diameter (PD) in a pore diameter range of 0.01 ?m to 1 ?m in a pore distribution determined by mercury intrusion/volume-based average particle diameter (d50)×100 is provided.

Abstract: A method for manufacturing a silicon carbide substrate includes the following steps. There is prepared a silicon carbide single crystal substrate having a first main surface, a second main surface, and a first side end portion, the second main surface being opposite to the first main surface, the first side end portion connecting the first main surface and the second main surface to each other, the first main surface having a width with a maximum value of more than 100 mm. A silicon carbide epitaxial layer is formed in contact with the first side end portion, the first main surface, and a boundary between the first main surface and the first side end portion. The silicon carbide epitaxial layer formed in contact with the first side end portion and the boundary is removed.

Abstract: Provided is a photocurable resin composition that has a low viscosity and is capable of yielding a high refractive index. Specifically, a urethane (meth)acrylate resin (A) obtained by a reaction of an aromatic diisocyanate compound (a), a polyol compound (b), and a hydroxyl-group-containing (meth)acrylate compound (c) as essential raw material components is used. The urethane (meth)acrylate resin (A) contains a structural moiety (a-1) represented by structural formula (1) below: (where R1 represents a hydrogen atom or a methyl group) and a structural moiety (a-2) represented by structural formula (2) below: (where R1, R2, R3, X1, and X2 each independently represent a hydrogen atom or a methyl group) at a (a-1)/(a-2) molar ratio of 45/55 to 60/40. The polyol compound (b) has an aromatic hydrocarbon skeleton.

Abstract: A flight device includes at least one propelling unit and a controller unit for flying in the air, and the flight device is thrown by a user. The controller unit drives the propelling unit after throwing is performed by the user, such that the flight device flies based on a state of the flight device at a moment when the throwing is performed.

Abstract: An information gathering apparatus includes an information acquisition sensor unit to acquire information and a propelling system to fly in air. The information gathering apparatus includes a supporting unit and a controller. The supporting unit supports the propelling system in the first and second configurations. The controller moves the supporting unit such that the supporting unit supports the propelling system in the second configuration after the information gathering apparatus is thrown up in a state where the supporting unit supports the propelling system in the first configuration.

Abstract: A method for manufacturing a silicon carbide semiconductor device includes steps below. A silicon carbide substrate having a first main surface and a second main surface opposite to the first main surface, the first main surface having a maximal diameter greater than 100 mm, is prepared. An impurity region is formed on a side of the first main surface of the silicon carbide substrate. In a plan view, a cover member is arranged on the side of the first main surface so as to cover at least the entire impurity region. The silicon carbide substrate is annealed at a temperature lower than a melting point of the cover member while the cover member is arranged on the side of the first main surface of the silicon carbide substrate.

Abstract: A semiconductor substrate has an element portion and a termination portion located on an outer side of the element portion. A first electrode layer is provided on a first surface of the semiconductor substrate. A second electrode layer is provided on a second surface of the semiconductor substrate in an upper portion of the element portion. An interlayer insulation film is provided on the second surface of the semiconductor substrate. The interlayer insulation film has: an element insulation portion that provides insulation between a part of the element portion of the semiconductor substrate and the second electrode layer; and a termination insulation portion covering a termination portion of the semiconductor substrate. The termination insulation portion includes a high dielectric constant film that is higher in dielectric constant than the element insulation portion.

Abstract: An insulating layer is formed on a substrate made of silicon carbide. By performing etching using a mask layer formed on the insulating layer, a contact hole is formed in the insulating layer to expose a contact region, which is a portion of a main surface of the substrate. The step of forming the contact hole includes a step of providing the contact region with a surface roughness Ra of not less than 0.5 nm. An electrode layer is formed in contact with the contact region. By heating the electrode layer and the substrate, siliciding reaction is caused between the electrode layer and the contact region.

Abstract: A silicon carbide semiconductor device includes a silicon carbide substrate, a main electrode, a first barrier layer, and an interconnection layer. The main electrode is directly provided on the silicon carbide substrate. The first barrier layer is provided on the main electrode, and is made of a conductive material containing no aluminum. The interconnection layer is provided on the first barrier layer, is separated from the main electrode by the first barrier layer, and is made of a material containing aluminum.

Abstract: A method for manufacturing a silicon carbide semiconductor device includes steps below. A silicon carbide substrate having a first main surface and a second main surface opposite to the first main surface, the first main surface having a maximal diameter greater than 100 mm, is prepared. An impurity region is formed on a side of the first main surface of the silicon carbide substrate. In a plan view, a cover member is arranged on the side of the first main surface so as to cover at least the entire impurity region. The silicon carbide substrate is annealed at a temperature lower than a melting point of the cover member while the cover member is arranged on the side of the first main surface of the silicon carbide substrate.

Abstract: A silicon carbide semiconductor device includes a silicon carbide substrate, a gate insulating film, and a gate electrode. The gate insulating film is provided as being in contact with the first main surface of the silicon carbide substrate. The gate electrode is provided on the gate insulating film such that the gate insulating film lies between the gate electrode and the silicon carbide substrate. In a first stress test in which a gate voltage of ?5 V is applied to the gate electrode for 100 hours at a temperature of 175° C., an absolute value of a difference between a first threshold voltage and a second threshold voltage is not more than 0.5 V, with a threshold voltage before the first stress test being defined as the first threshold voltage and a threshold voltage after the first stress test being defined as the second threshold voltage.

Abstract: A wireless communication device includes: a wireless communication module configured to receive a plurality of notification signals that are successively transmitted from another wireless communication device; and a processor that is connected to the wireless communication module, the processor calculating a clock error between a clock in the wireless communication device and a clock in the other wireless communication device based on one or more of the notification signals that are received, and determining a timing at which to make the wireless communication module ready to receive a next notification signal from the other wireless communication device in accordance with the calculated clock error and a time interval at which the next notification signal will be transmitted from the other wireless communication device, the time interval being a predetermined fixed time interval or contained in the notification signal that has been received immediately prior to the next notification signal.

Abstract: A silicon carbide semiconductor device includes a silicon carbide semiconductor layer, a gate insulating film formed on the silicon carbide semiconductor layer, and a gate electrode provided on the gate insulating film, wherein the gate electrode has a polysilicon layer at least on a side of an interface with the gate insulating film, and the gate insulating film has an oxide film derived from the polysilicon layer, at an interface between the gate insulating film and the polysilicon layer of the gate electrode.

Abstract: A method for manufacturing a silicon carbide substrate includes the following steps. There is prepared a silicon carbide single crystal substrate having a first main surface, a second main surface, and a first side end portion, the second main surface being opposite to the first main surface, the first side end portion connecting the first main surface and the second main surface to each other, the first main surface having a width with a maximum value of more than 100 mm. A silicon carbide epitaxial layer is formed in contact with the first side end portion, the first main surface, and a boundary between the first main surface and the first side end portion. The silicon carbide epitaxial layer formed in contact with the first side end portion and the boundary is removed.

Abstract: A data read apparatus includes a nonvolatile memory comprising a plurality of blocks, each of the blocks including an area storing block information, in which a position of a next block is written, or storing the block information and file management information, and an area storing actual data; a volatile memory; a power-on circuit configured to turn on supply of power to the nonvolatile memory and the volatile memory; and a processor. The processor is configured to: read out the block information stored in each of the blocks of the nonvolatile memory, or the block information and the file management information, when the supply of power was turned on by the power-on circuit, and register the read-out block information, or the block information and the file management information, in the volatile memory as file position information.