Patents by Inventor Shuo-Yang SUN

Shuo-Yang SUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220238621
    Abstract: An organic semiconductor substrate includes a base, a first conductive pattern, a second conductive pattern, a first metal oxide pattern, a second metal oxide pattern, an organic flat pattern layer, a source, a drain, an organic semiconductor pattern, an organic gate insulating layer, and a gate. The first conductive pattern and the second conductive pattern are disposed on the base and separated from each other. The first metal oxide pattern and the second metal oxide pattern respectively cover and are electrically connected to the first conductive pattern and the second conductive pattern, respectively. A first portion of the organic flat pattern layer is disposed between the first metal oxide pattern and the second metal oxide pattern. A surface of the first metal oxide pattern has a first distance from the base. A surface of the first portion of the organic flat pattern layer has a second distance from the base. The second distance is less than or equal to the first distance.
    Type: Application
    Filed: July 1, 2021
    Publication date: July 28, 2022
    Applicant: Au Optronics Corporation
    Inventors: Shuo-Yang Sun, Shih-Hua Hsu, Ching-Wen Chen, Ying-Hui Lai
  • Publication number: 20220157911
    Abstract: A semiconductor device is disposed and includes a substrate, on which a scan line, a data line, a source electrode, a drain electrode, an organic semiconductor pattern, an organic insulating layer, a gate electrode, and an organic protection layer are disposed. The source electrode is electrically connected to the data line. The organic semiconductor pattern is disposed between the source electrode and the drain electrode. The organic insulating layer is disposed on an upper surface and a side surface of the organic semiconductor pattern. The organic insulating layer is at least disposed between the side surface of the organic semiconductor pattern and the gate electrode and disposed between the upper surface of the organic semiconductor pattern and the gate electrode. The gate electrode is electrically connected to the scan line. The organic protection layer covers the gate electrode.
    Type: Application
    Filed: June 30, 2021
    Publication date: May 19, 2022
    Applicant: Au Optronics Corporation
    Inventors: Shuo-Yang Sun, Shih-Hua Hsu, Ching-Wen Chen, Ying-Hui Lai
  • Patent number: 10475826
    Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, a gate dielectric layer, a first dielectric layer, a source electrode, and a drain electrode. The gate electrode is disposed on a substrate. The semiconductor layer is disposed on the substrate and overlaps with the gate electrode. The gate dielectric layer is disposed between the gate electrode and the semiconductor layer. The first dielectric layer is disposed on the substrate and covers two sides of the gate electrode or the semiconductor layer. The dielectric constant of the first dielectric layer is less than the dielectric constant of the gate dielectric layer, and the dielectric constant of the first dielectric layer is less than 4. The source electrode and the drain electrode are disposed on the substrate. The source electrode is separated from the drain electrode, and the source electrode and the drain electrode separately contact the semiconductor layer.
    Type: Grant
    Filed: May 4, 2018
    Date of Patent: November 12, 2019
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Shuo-Yang Sun, Yu-Hsing Liang, Wan-Chen Huang, Chun-Cheng Cheng
  • Publication number: 20180331130
    Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, a gate dielectric layer, a first dielectric layer, a source electrode, and a drain electrode. The gate electrode is disposed on a substrate. The semiconductor layer is disposed on the substrate and overlaps with the gate electrode. The gate dielectric layer is disposed between the gate electrode and the semiconductor layer. The first dielectric layer is disposed on the substrate and covers two sides of the gate electrode or the semiconductor layer. The dielectric constant of the first dielectric layer is less than the dielectric constant of the gate dielectric layer, and the dielectric constant of the first dielectric layer is less than 4. The source electrode and the drain electrode are disposed on the substrate. The source electrode is separated from the drain electrode, and the source electrode and the drain electrode separately contact the semiconductor layer.
    Type: Application
    Filed: May 4, 2018
    Publication date: November 15, 2018
    Inventors: Shuo-Yang SUN, Yu-Hsing LIANG, Wan-Chen HUANG, Chun-Cheng CHENG
  • Patent number: 9278512
    Abstract: A substrate bonding and debonding method includes the steps of: providing a substrate; forming a first silicone glue layer on a peel-off region of the substrate and a second silicone glue layer on a peripheral region of the substrate, in which the first and second silicone glue layers contain the same silicone main agent and silicone curing agent in a different ratio; adhering an opposite substrate to the first and second silicone glue layers; curing the first and second silicone glue layers to bond the substrate to the opposite substrate; and separating a portion of the substrate from the opposite substrate.
    Type: Grant
    Filed: January 29, 2014
    Date of Patent: March 8, 2016
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Shuo-Yang Sun, Wan-Chen Huang, Wei-Ting Lin, Chun-Cheng Cheng
  • Publication number: 20150083312
    Abstract: A substrate bonding and debonding method includes the steps of: providing a substrate; forming a first silicone glue layer on a peel-off region of the substrate and a second silicone glue layer on a peripheral region of the substrate, in which the first and second silicone glue layers contain the same silicone main agent and silicone curing agent in a different ratio; adhering an opposite substrate to the first and second silicone glue layers; curing the first and second silicone glue layers to bond the substrate to the opposite substrate; and separating a portion of the substrate from the opposite substrate.
    Type: Application
    Filed: January 29, 2014
    Publication date: March 26, 2015
    Applicant: AU Optronics Corporation
    Inventors: Shuo-Yang SUN, Wan-Chen HUANG, Wei-Ting LIN, Chun-Cheng CHENG