Abstract: An organic semiconductor substrate includes a base, a first conductive pattern, a second conductive pattern, a first metal oxide pattern, a second metal oxide pattern, an organic flat pattern layer, a source, a drain, an organic semiconductor pattern, an organic gate insulating layer, and a gate. The first conductive pattern and the second conductive pattern are disposed on the base and separated from each other. The first metal oxide pattern and the second metal oxide pattern respectively cover and are electrically connected to the first conductive pattern and the second conductive pattern, respectively. A first portion of the organic flat pattern layer is disposed between the first metal oxide pattern and the second metal oxide pattern. A surface of the first metal oxide pattern has a first distance from the base. A surface of the first portion of the organic flat pattern layer has a second distance from the base. The second distance is less than or equal to the first distance.

Abstract: A light emitting diode (LED) package structure includes a first insulating layer, a first conductive pattern, a second insulating layer, a second conductive pattern, an LED element, and a solder material. The first conductive pattern has a first portion and a second portion, the first portion fills a through hole of the first insulating layer, and the second portion is disposed on the first insulating layer. The second insulating layer is disposed on the first insulating layer and covers the first conductive pattern. The second portion of the first conductive pattern is sandwiched between the first insulating layer and the second insulating layer. The second conductive pattern is disposed on the second insulating layer and is electrically connected to the first conductive pattern. The LED element is bonded to the second conductive pattern. The solder material is disposed on the first portion of the first conductive pattern.

Abstract: An organic semiconductor substrate includes a base, a first conductive pattern, a second conductive pattern, a first metal oxide pattern, a second metal oxide pattern, an organic flat pattern layer, a source, a drain, an organic semiconductor pattern, an organic gate insulating layer, and a gate. The first conductive pattern and the second conductive pattern are disposed on the base and separated from each other. The first metal oxide pattern and the second metal oxide pattern respectively cover and are electrically connected to the first conductive pattern and the second conductive pattern, respectively. A first portion of the organic flat pattern layer is disposed between the first metal oxide pattern and the second metal oxide pattern. A surface of the first metal oxide pattern has a first distance from the base. A surface of the first portion of the organic flat pattern layer has a second distance from the base. The second distance is less than or equal to the first distance.

Abstract: A semiconductor device is disposed and includes a substrate, on which a scan line, a data line, a source electrode, a drain electrode, an organic semiconductor pattern, an organic insulating layer, a gate electrode, and an organic protection layer are disposed. The source electrode is electrically connected to the data line. The organic semiconductor pattern is disposed between the source electrode and the drain electrode. The organic insulating layer is disposed on an upper surface and a side surface of the organic semiconductor pattern. The organic insulating layer is at least disposed between the side surface of the organic semiconductor pattern and the gate electrode and disposed between the upper surface of the organic semiconductor pattern and the gate electrode. The gate electrode is electrically connected to the scan line. The organic protection layer covers the gate electrode.

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, a gate dielectric layer, a first dielectric layer, a source electrode, and a drain electrode. The gate electrode is disposed on a substrate. The semiconductor layer is disposed on the substrate and overlaps with the gate electrode. The gate dielectric layer is disposed between the gate electrode and the semiconductor layer. The first dielectric layer is disposed on the substrate and covers two sides of the gate electrode or the semiconductor layer. The dielectric constant of the first dielectric layer is less than the dielectric constant of the gate dielectric layer, and the dielectric constant of the first dielectric layer is less than 4. The source electrode and the drain electrode are disposed on the substrate. The source electrode is separated from the drain electrode, and the source electrode and the drain electrode separately contact the semiconductor layer.

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, a gate dielectric layer, a first dielectric layer, a source electrode, and a drain electrode. The gate electrode is disposed on a substrate. The semiconductor layer is disposed on the substrate and overlaps with the gate electrode. The gate dielectric layer is disposed between the gate electrode and the semiconductor layer. The first dielectric layer is disposed on the substrate and covers two sides of the gate electrode or the semiconductor layer. The dielectric constant of the first dielectric layer is less than the dielectric constant of the gate dielectric layer, and the dielectric constant of the first dielectric layer is less than 4. The source electrode and the drain electrode are disposed on the substrate. The source electrode is separated from the drain electrode, and the source electrode and the drain electrode separately contact the semiconductor layer.

Abstract: A substrate bonding and debonding method includes the steps of: providing a substrate; forming a first silicone glue layer on a peel-off region of the substrate and a second silicone glue layer on a peripheral region of the substrate, in which the first and second silicone glue layers contain the same silicone main agent and silicone curing agent in a different ratio; adhering an opposite substrate to the first and second silicone glue layers; curing the first and second silicone glue layers to bond the substrate to the opposite substrate; and separating a portion of the substrate from the opposite substrate.

Abstract: A substrate bonding and debonding method includes the steps of: providing a substrate; forming a first silicone glue layer on a peel-off region of the substrate and a second silicone glue layer on a peripheral region of the substrate, in which the first and second silicone glue layers contain the same silicone main agent and silicone curing agent in a different ratio; adhering an opposite substrate to the first and second silicone glue layers; curing the first and second silicone glue layers to bond the substrate to the opposite substrate; and separating a portion of the substrate from the opposite substrate.