Abstract: A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

Abstract: A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

Abstract: A substrate processing device includes a processing container; a substrate holder configured to hold a substrate arranged within the processing container; a gas nozzle configured to spray gas within the processing container; a controller configured to control collision of the gas with the substrate held by the substrate holder. The controller is configured to remove particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

Abstract: A substrate cleaning method includes: arranging a substrate within a processing container; spraying gas from a spray port of a gas nozzle arranged within the processing container; causing vertical shock waves, generated by spraying the gas from the gas nozzle, to collide with a main surface of the substrate; and removing particles adhering to the main surface of the substrate, by causing the vertical shock waves to collide with the main surface of the substrate.

Abstract: Contamination of a bottom surface of a substrate caused by a processing liquid used for cleaning a top surface of the substrate can be suppressed. After performing a liquid processing on the top surface of the substrate and a liquid processing on the bottom surface of the substrate in parallel while rotating the substrate by a substrate holding/rotating unit, when stopping the liquid processing on the top surface of the substrate and the liquid processing on the bottom surface of the substrate, a control unit 18 stops a supply of the processing liquid onto the top surface of the substrate by a first processing liquid supply device 73, and then, stops a supply of the processing liquid onto the bottom surface of the substrate by a second processing liquid supply device 71.

Abstract: Contamination of a bottom surface of a substrate caused by a processing liquid used for cleaning a top surface of the substrate can be suppressed. After performing a liquid processing on the top surface of the substrate and a liquid processing on the bottom surface of the substrate in parallel while rotating the substrate by a substrate holding/rotating unit, when stopping the liquid processing on the top surface of the substrate and the liquid processing on the bottom surface of the substrate, a control unit 18 stops a supply of the processing liquid onto the top surface of the substrate by a processing liquid supply device 73, and then, stops a supply of the processing liquid onto the bottom surface of the substrate by a processing liquid supply device 71.

Abstract: A disclosed substrate cleaning apparatus for cleaning a back surface of a substrate includes a first substrate supporting portion configured to support the substrate at a first area of a back surface of the substrate, the back surface facing down; a second substrate supporting portion configured to support the substrate at a second area of the back surface of the substrate, the second area being separated from the first area; a cleaning liquid supplying portion configured to supply cleaning liquid to the back surface of the substrate; a drying portion configured to dry the second area of the back surface of the substrate; and a cleaning portion configured to clean a third area of the back surface of the substrate when the substrate is supported by the first substrate supporting portion, the third area including the second area, and a fourth area of the back surface of the substrate when the substrate is supported by the second substrate supporting portion, the fourth area excluding the second area of the back

Abstract: A disclosed substrate cleaning apparatus for cleaning a back surface of a substrate includes a first substrate supporting portion configured to support the substrate at a first area of a back surface of the substrate, the back surface facing down; a second substrate supporting portion configured to support the substrate at a second area of the back surface of the substrate, the second area being separated from the first area; a cleaning liquid supplying portion configured to supply cleaning liquid to the back surface of the substrate; a drying portion configured to dry the second area of the back surface of the substrate; and a cleaning portion configured to clean a third area of the back surface of the substrate when the substrate is supported by the first substrate supporting portion, the third area including the second area, and a fourth area of the back surface of the substrate when the substrate is supported by the second substrate supporting portion, the fourth area excluding the second area of the back

Abstract: A substrate cleaning apparatus for cleaning a substrate back surface includes a first substrate supporting portion supporting the substrate at a first area of the substrate back surface, the back surface facing down; a second substrate supporting portion supporting the substrate at a second area of the substrate back surface, the second area being separated from the first area; a cleaning liquid supplying portion supplying cleaning liquid to the substrate back surface; a drying portion drying the second area of the substrate back surface; and a cleaning portion cleaning a third area of the substrate back surface when the substrate is supported by the first substrate supporting portion, the third area including the second area, and cleaning a fourth area of the substrate back surface when the substrate is supported by the second substrate supporting portion, the fourth area excluding the second area.

Abstract: A disclosed substrate cleaning apparatus for cleaning a back surface of a substrate includes a first substrate supporting portion configured to support the substrate at a first area of a back surface of the substrate, the back surface facing down; a second substrate supporting portion configured to support the substrate at a second area of the back surface of the substrate, the second area being separated from the first area; a cleaning liquid supplying portion configured to supply cleaning liquid to the back surface of the substrate; a drying portion configured to dry the second area of the back surface of the substrate; and a cleaning portion configured to clean a third area of the back surface of the substrate when the substrate is supported by the first substrate supporting portion, the third area including the second area, and a fourth area of the back surface of the substrate when the substrate is supported by the second substrate supporting portion, the fourth area excluding the second area of the back

Abstract: In the present invention, a substrate transfer unit into/from which a substrate is transferred from/to the outside of a treatment container and a developing treatment unit in which development of the substrate is performed are arranged side by side in the treatment container, and a carrier mechanism is provided which carries the substrate while grasping an outside surface of the substrate from both sides, between the substrate transfer unit and the developing treatment unit. A developing solution supply nozzle for supplying a developing solution onto the substrate and a gas blow nozzle for blowing a gas to the substrate, are provided between the substrate transfer unit and the developing treatment unit and above a carriage path along which the substrate is carried, and a cleaning solution supply nozzle is provided in the developing treatment unit for supplying a cleaning solution onto the substrate.

Abstract: The flow of a processing liquid poured onto the surface of a substrate at a standstill to process the substrate from the surface to the back surface of the substrate is suppressed to achieve satisfactory cleaning. When a processing liquid is poured onto a substrate held in a horizontal position by a substrate holding unit to carryout a predetermined process, for example, a cleaning liquid is discharged through a discharge opening corresponding to the entire circumference of the back surface of the substrate before pouring the processing liquid onto the surface of the substrate, and the cleaning liquid discharged on the back surface of the substrate and a liquid flowing from the surface to the back surface of the substrate are sucked through a suction opening corresponding to the entire circumference of the back surface of the substrate and included in a first suction means. Thus an outward flow of the cleaning liquid is produced on the back surface of the substrate.

Abstract: A developing treatment apparatus for performing a developing treatment for a substrate, includes a substrate holding member for holding the substrate; an outer peripheral plate surrounding an outer peripheral portion of the substrate to form a gap between the plate and the outer peripheral portion of the substrate; and gas blowout ports for forming a gas flow which flows on a rear face of the substrate from a central portion side of the substrate to the outer peripheral portion side of the substrate, and passes by a lower end portion side of the gap.

Abstract: A disclosed substrate cleaning apparatus for cleaning a back surface of a substrate includes a first substrate supporting portion configured to support the substrate at a first area of a back surface of the substrate, the back surface facing down; a second substrate supporting portion configured to support the substrate at a second area of the back surface of the substrate, the second area being separated from the first area; a cleaning liquid supplying portion configured to supply cleaning liquid to the back surface of the substrate; a drying portion configured to dry the second area of the back surface of the substrate; and a cleaning portion configured to clean a third area of the back surface of the substrate when the substrate is supported by the first substrate supporting portion, the third area including the second area, and a fourth area of the back surface of the substrate when the substrate is supported by the second substrate supporting portion, the fourth area excluding the second area of the back

Abstract: Rinsing nozzles 310a to 310e are moved on a wafer W while they are discharging rinsing solution 326. At that point, discharging openings 317a to 317e are contacted to developing solution 350 coated on the wafer W or rinsing solution 326 on the wafer W. Thus, the impact against the wafer W can be suppressed. As a result, pattern collapse can be prevented. In addition, a front portion of the developing solution 350 can push away the developing solution 350.

Abstract: The flow of a processing liquid poured onto the surface of a substrate at a standstill to process the substrate from the surface to the back surface of the substrate is suppressed to achieve satisfactory cleaning. When a processing liquid is poured onto a substrate held in a horizontal position by a substrate holding unit to carryout a predetermined process, for example, a cleaning liquid is discharged through a discharge opening corresponding to the entire circumference of the back surface of the substrate before pouring the processing liquid onto the surface of the substrate, and the cleaning liquid discharged on the back surface of the substrate and a liquid flowing from the surface to the back surface of the substrate are sucked through a suction opening corresponding to the entire circumference of the back surface of the substrate and included in a first suction means. Thus an outward flow of the cleaning liquid is produced on the back surface of the substrate.

Abstract: In the present invention, a substrate transfer unit into/from which a substrate is transferred from/to the outside of a treatment container and a developing treatment unit in which development of the substrate is performed are arranged side by side in the treatment container, and a carrier mechanism is provided which carries the substrate while grasping an outside surface of the substrate from both sides, between the substrate transfer unit and the developing treatment unit. A developing solution supply nozzle for supplying a developing solution onto the substrate and a gas blow nozzle for blowing a gas to the substrate, are provided between the substrate transfer unit and the developing treatment unit and above a carriage path along which the substrate is carried, and a cleaning solution supply nozzle is provided in the developing treatment unit for supplying a cleaning solution onto the substrate.

Abstract: In the present invention, an outer peripheral plate is provided in a manner to surround a held substrate. A small gap exists between the outer peripheral plate and the outer peripheral portion of the substrate. Gas blowout ports are formed on the upper surface of an inner cup on the rear face side of the substrate. During cleaning of the substrate by a cleaning solution supplied onto the substrate, a gas is blown out from the gas blowout ports to form a gas flow that flows from the rear face side of the substrate and passes by the lower side of the gap outward to the outer peripheral plate side. The liquid such as the cleaning solution leaking through the gap is swept outward by the gas flow and flows along the rear face of the outer peripheral plate to be drained. According to the present invention, the liquid can be prevented from running around to the rear face side of the substrate during developing treatment.

Abstract: Rinsing nozzles 310a to 310e are moved on a wafer W while they are discharging rinsing solution 326. At that point, discharging openings 317a to 317e are contacted to developing solution 350 coated on the wafer W or rinsing solution 326 on the wafer W. Thus, the impact against the wafer W can be suppressed. As a result, pattern collapse can be prevented. In addition, a front portion of the developing solution 350 can push away the developing solution 350.

Abstract: A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.