Patents by Inventor Shuvra MONDAL

Shuvra MONDAL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11382244
    Abstract: Provided is a temperature-pressure complex sensor with an anti-radiation property including a first sensing material which is a porous conductive film, and second sensing materials which are dispersedly disposed on a surface of the first sensing material. The second sensing materials may include a conductive structure having a two-dimensional crystal structure, and nanoparticles having a radiation shielding property which are disposed between crystal layers of the conductive structure.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: July 5, 2022
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Seong Jun Kim, Choon Gi Choi, Tam Van Nguyen, Bok Ki Min, Shuvra Mondal, Yoonsik Yi
  • Patent number: 11002619
    Abstract: Provided is a pressure-strain sensor including a graphene structure having a three-dimensional porous structure, planar sheets provided on a surface of the graphene structure, and a polymer layer configured to cover the graphene structure and the planar sheets, wherein each of the planar sheets contains a transition metal chalcogenide compound.
    Type: Grant
    Filed: April 19, 2019
    Date of Patent: May 11, 2021
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Seong Jun Kim, Choon-Gi Choi, Shuvra Mondal
  • Publication number: 20200170149
    Abstract: Provided is a temperature-pressure complex sensor with an anti-radiation property including a first sensing material which is a porous conductive film, and second sensing materials which are dispersedly disposed on a surface of the first sensing material. The second sensing materials may include a conductive structure having a two-dimensional crystal structure, and nanoparticles having a radiation shielding property which are disposed between crystal layers of the conductive structure.
    Type: Application
    Filed: September 10, 2019
    Publication date: May 28, 2020
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Seong Jun KIM, Choon Gi CHOI, Tam Van Nguyen, Bok Ki MIN, Shuvra MONDAL, Yoonsik YI
  • Publication number: 20190323905
    Abstract: Provided is a pressure-strain sensor including a graphene structure having a three-dimensional porous structure, planar sheets provided on a surface of the graphene structure, and a polymer layer configured to cover the graphene structure and the planar sheets, wherein each of the planar sheets contains a transition metal chalcogenide compound.
    Type: Application
    Filed: April 19, 2019
    Publication date: October 24, 2019
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Seong Jun KIM, Choon-Gi CHOI, Shuvra MONDAL