Abstract: The present invention relates to a light emitting diode (LED). The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.

Abstract: The invention is an illumination system comprising a semiconductor light source module. The illumination system comprises a reflector comprising a curved reflective surface, a holder coupled to the reflector, and a semiconductor light source module comprising a first light-emitting unit and a second light-emitting unit. The holder comprises a second holding section and a first holding section disposed between the reflector and the second holding section. The semiconductor light-source module is disposed on the second holding section to face the curved reflective surface. An angle between at least a light-emitting unit and at least a part of the first holding section is formed and ranges from 145 to 175 degrees.

Abstract: A light-emitting diode (LED) is provided. An LED die includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first electrode and a second electrode. At least a part of the first semiconductor is exposed from the light emitting layer and the second semiconductor layer. The first electrode and the second electrode is disposed on top of the exposed first semiconductor layer and the second semiconductor layer respectively. At least two metal pads are disposed on top of the first electrode and the second electrode of the LED die respectively. Each of the metal pads has a side surface. A fluorescent layer is disposed on a surface of the LED die. The fluorescent layer directly contacts with the side surfaces of the metal pads and fills a gap between the metal pads.

Abstract: A capacitor structure is provided, which includes a conductive substrate, a first dielectric layer, and a first metal layer. The conductive substrate includes a first surface and at least one first concave located on the first surface. The first dielectric layer covers the first surface and the first concave. The first metal layer covers the first dielectric layer, wherein the first dielectric layer and the first metal layer respectively have concave structures corresponding to the first concave. A stack-type capacitor structure is also provided.

Abstract: A light emitting device including a light emitting component is provided, wherein said light emitting comprising an integrated light emitting diode and a semiconductor field effect transistor. The semiconductor field effect transistor may prevent situations such as overheating and voltage instability by controlling a current passing through the light emitting diode as well as enhancing the ability to withstand electrostatic discharge and reducing cost of the light emitting device in multiple aspects.

Abstract: The present invention relates to a high-voltage light-emitting device suitable for light-emitting diode chip array module. The device comprises a set of light emitting diode chips, about 18˜25 chips, deposited on a substrate by using a non-matrix arrangement. Through the adjustments, the high-voltage light-emitting device of the present invention has optimized luminous efficiency.

Abstract: A light emitting diode (LED) chip including a first type semiconductor layer, an light-emitting layer, a second type semiconductor layer, a current blocking layer, a transparent conductive layer and an electrode is provided. The light-emitting layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the light-emitting layer. The current blocking layer is disposed on the second type semiconductor layer. The transparent conductive layer is disposed on the second type semiconductor layer and covered the current blocking layer. The electrode is disposed on the transparent conductive layer corresponding to the current blocking layer. The current blocking layer and the electrode respectively have a first width and a second width in a cross section view, and the first width of the current blocking layer is larger than the second width of the electrode.

Abstract: The present invention relates to a light-emitting diode (LED) and a method for manufacturing the same. The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.

Abstract: An illumination device includes a supporting base, at least two supports and at least two semiconductor light emitting elements. The supports are disposed on the supporting base and coupled to each other. The semiconductor light emitting elements are respectively coupled to the supports. The semiconductor light emitting element includes a transparent substrate and a light emitting diode (LED) structure. The transparent substrate has a support surface and a second main surface disposed opposite to each other. The LED structure is disposed on the support surface. At least a part of the light emitted from the LED structure may pass through the transparent substrate and emerge from the second main surface.

Abstract: A semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) chips. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An illumination device includes the semiconductor light emitting element and a supporting base. The semiconductor light emitting element is disposed on the supporting base, and an angle is formed between the semiconductor light emitting element and the supporting base.

Abstract: A semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) structures. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An illumination device includes the semiconductor light emitting element and a supporting base. The semiconductor light emitting element is disposed on the supporting base, and an angle is formed between the semiconductor light emitting element and the supporting base.

Abstract: The present invention relates to a light emitting diode (LED). The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.

Abstract: A semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) chips. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An illumination device includes the semiconductor light emitting element and a supporting base. The semiconductor light emitting element is disposed on the supporting base, and an angle is formed between the semiconductor light emitting element and the supporting base.

Abstract: The present invention relates to a light-emitting diode (LED). The LED comprises an LED die, one or more metal pads, and a fluorescent layer. The characteristics of the present invention include that the metals pads are left exposed for the convenience of subsequent wiring and packaging processes. In addition, the LED provided by the present invention is a single light-mixing chip, which can be packaged directly without the need of coating fluorescent powders on the packaging glue. Because the fluorescent layer and the packaging glue are not processed simultaneously and are of different materials, the stress problem in the packaged LED can be reduced effectively.

Abstract: A method for manufacturing light emitting device is provided. Firstly, provide a substrate. Then arrange a light emitting unit on the substrate. Next form at least one electrode and arrange at least one protective layer on the electrode. The protective layer is to prevent a phosphor layer following formed on the light emitting unit from covering the electrode. After forming the phosphor layer, flatten the phosphor layer and the protective layer. A part of the phosphor layer over the protective layer is removed. Thus the electrode is not affected by the phosphor layer and conductivity of the electrode is improved to resolve phosphor thickness and uniformity problems of the light emitting device. Therefore, the thickness of the light emitting device with LED is effectively reduced and stability of white color temperature control is significantly improved.

Abstract: A light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) chips. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED chips are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED chips. Each of the LED chips includes a first electrode and a second electrode. Light emitted from at least one of the LED chips passes through the transparent substrate and emerges from the second main surface. An illumination device includes the light emitting element and a supporting base. The light emitting element is disposed on the supporting base, and an angle is formed between the light emitting element and the supporting base.

Abstract: A sapphire substrate configured to form a light emitting diode (LED) chip providing light in multi-directions, a LED chip and an illumination device are provided in the present invention. The sapphire substrate includes a growth surface and a second main surface opposite to each other. A thickness of the sapphire substrate is thicker than or equal to 200 micrometers. The LED chip includes the sapphire substrate and at least one LED structure. The LED structure is disposed on the growth surface and forms a first main surface where light emitted from with a part of the growth surface without the LED structures. At least a part of light beams emitted from the LED structure pass through the sapphire substrate and emerge from the second main surface. The illumination device includes at least one LED chip and a supporting base. The LED chip is disposed on the supporting base.

Abstract: The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.