Abstract: Some novel features pertain to a package substrate that includes a core layer, a first via, a first dielectric layer, and a first inductor. The core layer includes a first surface and a second surface. The first via is located in the core layer. The first dielectric layer is coupled to the first surface of the core layer. The first inductor is located in the first dielectric layer. The first inductor is coupled to the first via in the core layer. The first inductor is configured to generate a magnetic field that laterally traverses the package substrate. In some implementations, the package substrate further includes a first pad coupled to the first inductor, wherein the first pad is configured to couple to a solder ball. In some implementations, the package substrate includes a second via located in the core layer, and a second inductor located in the first dielectric layer.

Abstract: A hybrid package having a processor module disposed on a substrate and an auxiliary module disposed on a patterned lid. The auxiliary module may be a memory module, a power management integrated circuit (PMIC) module, and/or other suitable module, that are located in the package along with the processor module. Having the auxiliary module in the package with the processor module reduces the noise at the solder bump between the processor module and the substrate. Having the auxiliary module in the package with the processor module also allows other modules to be added to the package without increasing the area of the package.

Abstract: The disclosure is related to pin layouts in a semiconductor package. One embodiment of the disclosure provides a rhombus shaped shared reference pin layout that isolates a set of differential pin pairs. The differential signal pin pairs are configured such that an axis formed by a vertical signal pin pair is orthogonal to and mutually bisecting an axis formed by a lateral signal pin pair.

Abstract: A semiconductor device includes a first integrated circuit chip, a second integrated circuit chip, a coupled inductor system, and a semiconductor package. The first integrated circuit chip is connected to a substrate and configured to process digital data. The second integrated circuit chip is configured to manage power for the first integrated circuit chip. The coupled inductor system is embedded in the substrate, connected to the second integrated circuit chip, and has a first inductor configured to be magnetically coupled to a second inductor. The semiconductor package is configured to encapsulate the first integrated circuit chip and the second integrated circuit chip.

Abstract: A hybrid package having a processor module disposed on a substrate and an auxiliary module disposed on a patterned lid. The auxiliary module may be a memory module, a power management integrated circuit (PMIC) module, and/or other suitable module, that are located in the package along with the processor module. Having the auxiliary module in the package with the processor module reduces the noise at the solder bump between the processor module and the substrate. Having the auxiliary module in the package with the processor module also allows other modules to be added to the package without increasing the area of the package.

Abstract: Methods and apparatuses, wherein the method includes creating a surface mount socket pin for integrated circuit packaging. The method couples a first conductive element to a second conductive element, wherein the closed loop conductor is configured to provide two paths between the first conductive element and second conductive element, wherein a central region of the closed loop conductor is configured to engage with a plurality of symmetrical bumps in a mold to secure the closed loop conductor, wherein the closed loop conductor is elastic.

Abstract: Methods and apparatuses for reducing crosstalk. The method couples a first pin, having a first magnetic field direction, with a first socket. The method couples a second pin, having a second magnetic field direction, in a second socket. The method orients the first pin approximately orthogonally to the second pin such that the first magnetic field direction and the second magnetic field direction are approximately orthogonally oriented.

Abstract: Methods and apparatuses for reducing excess on die capacitance. The method couples a first die pad to a first via. The method couples a second die pad to a second via. The method couples a first inductor to the first die pad and the second via. The method couples a second inductor to the second die pad and the first via.

Abstract: The disclosure is related to pin layouts in a semiconductor package. One embodiment of the disclosure provides a rhombus shaped shared reference pin layout that isolates a set of differential pin pairs. The differential signal pin pairs are configured such that an axis formed by a vertical signal pin pair is orthogonal to and mutually bisecting an axis formed by a lateral signal pin pair.

Abstract: Some novel features pertain to a package substrate that includes a core layer, a first via, a first dielectric layer, and a first inductor. The core layer includes a first surface and a second surface. The first via is located in the core layer. The first dielectric layer is coupled to the first surface of the core layer. The first inductor is located in the first dielectric layer. The first inductor is coupled to the first via in the core layer. The first inductor is configured to generate a magnetic field that laterally traverses the package substrate. In some implementations, the package substrate further includes a first pad coupled to the first inductor, wherein the first pad is configured to couple to a solder ball. In some implementations, the package substrate includes a second via located in the core layer, and a second inductor located in the first dielectric layer.

Abstract: An IC die includes active circuitry and I/O nodes tied together in first net and at least a second net. A first die pad and a second die pad adjacent thereto are coupled to the first and second net, respectively. A redirect layer (RDL) coupled to the die pads over a first dielectric vias includes a first RDL trace lateral coupling the first die pad and first RDL pad and a second RDL trace coupling the second die pad and second RDL pad. The first RDL pad includes an RDL notch facing the second RDL trace. Under bump metallization (UBM) pads on a second dielectric include a first UBM pad coupled to the first RDL pad over a second dielectric via. A first metal bonding connector is on the first UBM pad. The first UBM pad or first metal bonding connector overhangs the first RDL pad over the notch.

Abstract: An IC die includes active circuitry and I/O nodes tied together in first net and at least a second net. A first die pad and a second die pad adjacent thereto are coupled to the first and second net, respectively. A redirect layer (RDL) coupled to the die pads over a first dielectric vias includes a first RDL trace lateral coupling the first die pad and first RDL pad and a second RDL trace coupling the second die pad and second RDL pad. The first RDL pad includes an RDL notch facing the second RDL trace. Under bump metallization (UBM) pads on a second dielectric include a first UBM pad coupled to the first RDL pad over a second dielectric via. A first metal bonding connector is on the first UBM pad. The first UBM pad or first metal bonding connector overhangs the first RDL pad over the notch.

Abstract: An interconnect via structure according to the present invention can be used to support high frequency broadband signal transmission. The interconnect vias progressively increase in size and pitch from the signal source layer of the package substrate to the terminal pad layer of the package substrate. Each interconnect via includes a plurality of conductive sections formed at different substrate layers. At each substrate layer, the size and pitch of the vias result in a specified impedance. In a practical embodiment, the via impedance at each substrate layer is constant (e.g., 50 ohms). The interconnect structure can maintain a constant impedance while transitioning from a relatively narrow pitch at the signal source layer to a relatively wide pitch at the terminal layer, which may correspond to the pitch of the package substrate solder balls.

Abstract: A passive component is realized on-die by fabricating a first conductor from either a layer of interconnect metal comprising copper or aluminum and being between approximately 1.0 micron and approximately 2.0 microns thick, or from a layer of under bump metal comprising either copper or aluminum and being between approximately 2.0 microns to approximately 5.0 microns thick. Following, a first isolation layer is formed over the first conductor. A second conductor having at least one external pad and comprising under bump metal is next fabricated over the first isolation layer. The second conductor can be fabricated substantially directly above the first conductor, for example. Thereafter, a second isolation layer having a hole over the external pad of the second conductor is formed over the second conductor. Subsequently, a bump attach site is fabricated at the hole in the second isolation layer over the external pad of the second conductor.

Abstract: An electronic package component includes a flip-chip device mounted to a BGA substrate. The BGA substrate includes conductive traces formed on its upper surface and configured in a coplanar waveguide structure. The package includes a dielectric coating applied over the conductive traces and over the upper surface of the substrate. The coating is formed from a material having a dielectric constant that is equal to or approximately equal to the dielectric constant of the BGA substrate material. The dielectric coating reduces the adverse effects caused by phase velocity dispersion of the signal propagated by the coplanar waveguide.

Abstract: An electronic package, such as a ball grid array (“BGA”) package, includes a high speed signal trace formed at a conductive layer and a corresponding reference plane formed at another conductive layer. The reference plane includes a cutout region formed therein; the cutout region is positioned over the signal solder ball to which the high speed signal trace is coupled. The lateral center point of the cutout region is offset relative to the lateral center point of the signal solder ball. The offset configuration reduces the capacitance between the signal solder ball and the reference plane and improves the high frequency transmission characteristics of the electronic package.

Abstract: Methods for forming the package are disclosed. The device package includes electrical connectors and an encapsulant. The package is formed by placing removable material over a portion of the connectors to prevent encapsulant attachment to the portions masked by the removable material.

Abstract: In one embodiment, the invention includes first and second transmission lines fabricated in a redistribution layer over a semiconductor die. The first transmission line has a first distance from a first ground return path formed in a first metal level. The first transmission line has a first impedance corresponding to the first distance. In other words, the impedance of the first transmission line is affected by the distance between the first transmission line and the first ground return path. Similar to the first transmission line, the second transmission line has a second distance from a second ground return path formed in a second metal level. The second transmission line has a second impedance corresponding to the second distance. In other words, the impedance of the second transmission line is affected by the distance between the second transmission line and the second ground return path.

Abstract: An output of a voltage regulator is a core voltage line that runs adjacent to a die attach area on a packaging substrate. An input of the voltage regulator is typically coupled to a power supply which, in one embodiment, is also an I/O voltage line that runs adjacent to the die attach area. In one embodiment, the core voltage line is shaped as a ring encircling the die attach area on the packaging substrate. In another embodiment, the I/O voltage line is also shaped as a ring encircling the die attach area on the packaging substrate. Further, a semiconductor die having at least one I/O Vdd bond pad and at least one core Vdd bond pad can be mounted in the die attach area. The I/O Vdd bond pad and the core Vdd bond pad can be connected, respectively, to the I/O voltage ring and the core voltage ring.

Abstract: In one embodiment, the invention includes first and second transmission lines fabricated in a redistribution layer over a semiconductor die. The first transmission line has a first distance from a first ground return path formed in a first metal level. The first transmission line has a first impedance corresponding to the first distance. In other words, the impedance of the first transmission line is affected by the distance between the first transmission line and the first ground return path. Similar to the first transmission line, the second transmission line has a second distance from a second ground return path formed in a second metal level. The second transmission line has a second impedance corresponding to the second distance. In other words, the impedance of the second transmission line is affected by the distance between the second transmission line and the second ground return path.