Patents by Inventor Siamak Salimian

Siamak Salimian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200079044
    Abstract: A method of reclaiming a used seal includes boiling the used seal in a liquid, and after boiling the used seal in the liquid, baking the used seal. The boiling the used seal may include boiling for a predetermined boiling time in the liquid, and the baking the used seal may include baking the used seal for a predetermined bake time at a predetermined temperature.
    Type: Application
    Filed: September 6, 2018
    Publication date: March 12, 2020
    Inventors: Shagun P. MAHESHWARI, Yao-Hung YANG, Tom K. CHO, Yu-Chi YEH, Andrew YU, Aniruddha PAL, Siamak SALIMIAN
  • Patent number: 10460941
    Abstract: A method of processing a workpiece is disclosed, where the interior surfaces of the plasma chamber are first coated using a conditioning gas that contains the desired dopant species. A working gas, which does not contain the desired dopant species, is then introduced and energized to form a plasma. This plasma is used to sputter the desired dopant species from the interior surfaces. This dopant species is deposited on the workpiece. A subsequent implant process may then be performed to implant the dopant into the workpiece. The implant process may include a thermal treatment, a knock in mechanism, or both.
    Type: Grant
    Filed: March 15, 2017
    Date of Patent: October 29, 2019
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Siamak Salimian, Qi Gao, Helen L. Maynard
  • Publication number: 20190264314
    Abstract: Disclosed herein is a poly-crystalline protective coating on a surface of a chamber component. The poly-crystalline protective coating may be deposited by thermal spraying and may comprise cubic yttria and monoclinic yttria. At least one of: (1) the ratio of the cubic yttria to monoclinic yttria, (2) the crystallite size of at least one of the cubic yttria or the monoclinic yttria, (3) the atomic ratio of oxygen (O) to yttria (Y), and/or (4) the dielectric properties of the poly-crystalline protective coating may be controlled to obtain consistent chamber performance when switching coated chamber components within a chamber of interest.
    Type: Application
    Filed: February 12, 2019
    Publication date: August 29, 2019
    Inventors: Ramesh Gopalan, Yixing Lin, Tasnuva Tabassum, Siamak Salimian, Yikai Chen, Kevin Papke
  • Publication number: 20180130659
    Abstract: A method of processing a workpiece is disclosed, where the interior surfaces of the plasma chamber are first coated using a conditioning gas that contains the desired dopant species. A working gas, which does not contain the desired dopant species, is then introduced and energized to form a plasma. This plasma is used to sputter the desired dopant species from the interior surfaces. This dopant species is deposited on the workpiece. A subsequent implant process may then be performed to implant the dopant into the workpiece. The implant process may include a thermal treatment, a knock in mechanism, or both.
    Type: Application
    Filed: March 15, 2017
    Publication date: May 10, 2018
    Inventors: Siamak Salimian, Qi Gao, Helen L. Maynard
  • Patent number: 7722737
    Abstract: Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel.
    Type: Grant
    Filed: May 4, 2005
    Date of Patent: May 25, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Sudhir Gondhalekar, Robert Duncan, Siamak Salimian, Muhammad M. Rasheed, Harry Smith Whitesell, Bruno Geoffrion, Padmanabhan Krishnaraj, Rudolf Gujer, Diana E. Gujer, legal representative
  • Publication number: 20090263594
    Abstract: A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.
    Type: Application
    Filed: June 29, 2009
    Publication date: October 22, 2009
    Applicant: Applied Materials, Inc.
    Inventors: Rongping Wang, Canfeng Lai, Yuri Trachuk, Siamak Salimian
  • Patent number: 7571698
    Abstract: A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.
    Type: Grant
    Filed: January 10, 2005
    Date of Patent: August 11, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Rongping Wang, Canfeng Lai, Yuri Trachuk, Siamak Salimian
  • Publication number: 20080041821
    Abstract: Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel.
    Type: Application
    Filed: October 23, 2007
    Publication date: February 21, 2008
    Applicant: Applied Materials, Inc.
    Inventors: Sudhir Gondhalekar, Robert Duncan, Siamak Salimian, Muhammad Rasheed, Harry Smith Whitesell, Bruno Geoffrion, Padmanabhan Krishnaraj, Rudolf Gujer, Diana Gujer
  • Publication number: 20070091535
    Abstract: A thermally controlled chamber liner comprising a passage having an inlet and outlet adapted to flow a fluid through the one or more fluid passages formed at least partially therein. The chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. The thermally controlled chamber liner maintains a predetermined temperature by running fluid from a temperature controlled, fluid source through the fluid passages. By maintaining a predetermined temperature, deposition of films on the chamber liner is discouraged and particulate generation due to stress cracking of deposited films is minimized.
    Type: Application
    Filed: November 17, 2006
    Publication date: April 26, 2007
    Inventors: Hamid Noorbakhsh, Siamak Salimian, Paul Luscher, James Carducci, Evans Lee, Kaushik Vaidya, Hongqing Shan, Michael Welch
  • Patent number: 7147719
    Abstract: In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand.
    Type: Grant
    Filed: June 23, 2003
    Date of Patent: December 12, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Michael D. Welch, Homgqing Shan, Paul E. Luscher, Evans Y. Lee, James D. Carducci, Siamak Salimian
  • Publication number: 20060150913
    Abstract: A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.
    Type: Application
    Filed: January 10, 2005
    Publication date: July 13, 2006
    Applicant: Applied Materials, Inc.
    Inventors: Rongping Wang, Canfeng Lai, Yuri Trachuk, Siamak Salimian
  • Publication number: 20060113038
    Abstract: Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel.
    Type: Application
    Filed: May 4, 2005
    Publication date: June 1, 2006
    Applicant: Applied Materials, Inc.
    Inventors: Sudhir Gondhalekar, Robert Duncan, Siamak Salimian, Muhammad Rasheed, Harry Whitesell, Bruno Geoffrion, Padmanabhan Krishnaraj, Rudolf Gujer
  • Patent number: 6958112
    Abstract: Methods and systems are provided for depositing silicon oxide in a gap on a substrate. The silicon oxide is formed by flowing a process gas into a process chamber and forming a plasma having an overall ion density of at least 1011 ions/cm3. The process gas includes H2, a silicon source, and an oxidizing gas reactant, and deposition into the gap is achieved using a process that has simultaneous deposition and sputtering components. The probability of forming a void is reduced by ensuring that the plasma has a greater density of ions having a single oxygen atom than a density of ions having more than one oxygen atom.
    Type: Grant
    Filed: May 27, 2003
    Date of Patent: October 25, 2005
    Assignee: Applied Materials, Inc.
    Inventors: M. Ziaul Karim, Farhad K. Moghadam, Siamak Salimian
  • Patent number: 6899111
    Abstract: The present invention provides a method and an apparatus for cleaning substrates. The cleaning chamber defines a processing cavity adapted to accommodate a substrate therein. In one embodiment, the cleaning chamber includes a chamber body having a processing cavity defined therein. A substrate is disposed in the processing cavity without contacting other chamber components by a Bernoulli effect and/or by a fluid cushion above and/or below the substrate. Fluid is flowed into the processing cavity at an angle relative to a radial line of the substrate to induce and/or control rotation of the substrate during a cleaning and drying process.
    Type: Grant
    Filed: October 31, 2001
    Date of Patent: May 31, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Paul E. Luscher, James D. Carducci, Siamak Salimian, Michael D. Welch
  • Patent number: 6863835
    Abstract: A plasma chamber apparatus and method employing a magnet system to block the plasma within the chamber interior from reaching the exhaust pump. An exhaust channel between the chamber interior and the pump includes a magnet and at least one deflector that creates turbulence in the flow of exhaust gases. The magnetic field and the turbulence produced by the deflector both increase the rate of recombination of charged particles in the gases, thereby reducing the concentration of charged particles sufficiently to quench the plasma downstream of the magnet and deflector, thereby preventing the plasma body within the chamber from reaching the exhaust pump. The plasma confinement effect of the magnetic field permits the use of a wider and/or less sinuous exhaust channel than would be required to block the plasma without the magnetic field.
    Type: Grant
    Filed: April 25, 2000
    Date of Patent: March 8, 2005
    Inventors: James D. Carducci, Hamid Noorbakhsh, Evans Y. Lee, Hongqing Shan, Siamak Salimian, Paul E. Luscher, Michael D. Welch
  • Publication number: 20050003675
    Abstract: A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.
    Type: Application
    Filed: June 7, 2004
    Publication date: January 6, 2005
    Inventors: James Carducci, Hamid Noorbakhsh, Evans Lee, Bryan Pu, Hongqing Shan, Claes Bjorkman, Siamak Salimian, Paul Luscher, Michael Welch
  • Publication number: 20040241342
    Abstract: Methods and systems are provided for depositing silicon oxide in a gap on a substrate. The silicon oxide is formed by flowing a process gas into a process chamber and forming a plasma having an overall ion density of at least 1011 ions/cm3. The process gas includes H2, a silicon source, and an oxidizing gas reactant, and deposition into the gap is achieved using a process that has simultaneous deposition and sputtering components. The probability of forming a void is reduced by ensuring that the plasma has a greater density of ions having a single oxygen atom than a density of ions having more than one oxygen atom.
    Type: Application
    Filed: May 27, 2003
    Publication date: December 2, 2004
    Applicant: Applied Materials, Inc.
    Inventors: M. Ziaul Karim, Farhad K. Moghadam, Siamak Salimian
  • Patent number: 6822185
    Abstract: The temperature of a plasma chamber of a semiconductor fabrication tool is maintained substantially constant utilizing a variety of techniques, separately or in combination. One technique is to provide the exterior surface of the plasma chamber dome with a plurality of fins projecting into high velocity regions of an overlying airflow in order to dissipate heat from the chamber. Ducting defined by cover overlying the exposed exterior surface of the dome may also feature projecting lips or an airfoil to place high velocity components of the airflow into contact within the exterior dome surface and the fins. Other techniques include employing a high speed fan to control airflow circulation, and the use of temperature sensors in communication the fan through a processor to control fan speed and thereby regulate chamber temperature.
    Type: Grant
    Filed: October 8, 2002
    Date of Patent: November 23, 2004
    Assignee: Applied Materials, Inc.
    Inventors: Michael Welch, Paul E. Luscher, Siamak Salimian, Rolf Guenther, Zhong Qiang Hua, Son Phi, Peter Loewenhardt
  • Patent number: 6797639
    Abstract: A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.
    Type: Grant
    Filed: September 24, 2002
    Date of Patent: September 28, 2004
    Assignee: Applied Materials Inc.
    Inventors: James D Carducci, Hamid Noorbakhsh, Evans Y Lee, Bryan Y Pu, Hongching Shan, Claes Bjorkman, Siamak Salimian, Paul E Luscher, Michael D Welch
  • Patent number: 6773544
    Abstract: The invention concerns a plasma reactor employing a chamber enclosure including a process gas inlet and defining a plasma processing region. A workpiece support pedestal capable of supporting a workpiece at processing location faces the plasma processing region, the pedestal and enclosure being spaced from one another to define a pumping annulus therebetween having facing walls in order to permit the process of gas to be evacuated therethrough from the process region. A pair of opposing plasma confinement magnetic poles within one of the facing walls of the annulus, the opposing magnetic poles being axially displaced from one another. The magnetic poles are axially displaced below the processing location by a distance which exceeds a substantial fraction of a spacing between the facing walls of the annulus.
    Type: Grant
    Filed: January 31, 2001
    Date of Patent: August 10, 2004
    Inventors: James D. Carducci, Hamid Noorbakhsh, Evans Y. Lee, Hongqing Shan, Siamak Salimian, Paul E. Luscher, Michael D. Welch