Abstract: Methods and apparatus for a baking chamber for processing a chamber component are provided herein. In some embodiments, a baking chamber includes: an enclosure defining a first chamber, wherein the first chamber comprises: a first chamber body having a first floor and first sidewalls that couple the first floor to a first lid of the first chamber body to define a first interior volume; a first support disposed in the first interior volume; a first gas line disposed in the first interior volume proximate the first lid; a first showerhead disposed between the first gas line and the first support; a first exhaust coupled to the first floor; and a first heater disposed in the first interior volume between the first support and the first floor; and wherein the enclosure includes a door configured to facilitate transferring the chamber component into and out of the enclosure.

Abstract: The present disclosure is directed to a system and method to identify and track parts of a semiconductor processing chamber, as well as the status of the parts, and store status information in a centralized location as status changes over time.

Abstract: Methods and apparatus reduce chucking abnormalities for electrostatic chucks by ensuring proper planarizing of ceramic surfaces of the electrostatic chuck. In some embodiments, a method for planarizing an upper ceramic surface of an electrostatic chuck assembly may comprise placing the electrostatic chuck assembly in a first planarizing apparatus, altering an upper ceramic surface of the electrostatic chuck assembly, and halting the altering of the upper ceramic surface of the electrostatic chuck assembly when an Sa parameter is less than approximately 0.1 microns, an Sdr parameter is less than approximately 2.5 percent, an Sz parameter is less than approximately 10 microns for any given area of approximately 10 mm2 of the upper ceramic surface, or a pit-porosity depth parameter of greater than 1 micron is less than approximately 0.1 percent of area of the upper ceramic surface.

Abstract: Methods and apparatus for producing bulk silicon carbide and producing silicon carbide coatings are provided herein. The method includes feeding a mixture of silicon carbide and ceramic into a plasma sprayer. The plasma generates a stream towards a substrate forming a bulk material or optionally a coating on the substrate such as an article upon contact therewith. In embodiments, the substrate can be removed, leaving a component part fabricated from bulk silicon carbide.

Abstract: Certain embodiments provide a method and non-transitory computer readable medium having instructions that, when executed by a processor of a processing system, cause the processing system to perform a method for improving operation of a semiconductor processing system. The method of part life estimation generally includes obtaining a chamber part having a first surface portion and second surface portion. A data matrix in the first portion of the chamber part is read. The data matrix has raised features. The first portion of the chamber part is cleaned. Wear on the raised features is evaluated. The part is discarded in response to the wear on the raised feature.

Abstract: Embodiments of the present invention provide apparatus, systems and methods for measuring dissociation of a process gas generated by a RPS. In one embodiment, a method of measuring dissociation of a process gas includes receiving a process gas from a RPS, the process gas including a polyatomic molecule that dissociates into at least one free radical. The method further includes irradiating the process gas with IR radiation at one or more wavelengths, detecting the IR radiation that passes through the process gas, and determining a degree of dissociation of the polyatomic molecule in the process gas based, at least in part, on the detected IR radiation. In one embodiment, the method further comprises modifying one or more settings of the RPS, based, at least in part, on the determined degree of dissociation.

Abstract: Methods and apparatus for a baking chamber for processing a chamber component are provided herein. In some embodiments, a baking chamber includes: an enclosure defining a first chamber, wherein the first chamber comprises: a first chamber body having a first floor and first sidewalls that couple the first floor to a first lid of the first chamber body to define a first interior volume; a first support disposed in the first interior volume; a first gas line disposed in the first interior volume proximate the first lid; a first showerhead disposed between the first gas line and the first support; a first exhaust coupled to the first floor; and a first heater disposed in the first interior volume between the first support and the first floor; and wherein the enclosure includes a door configured to facilitate transferring the chamber component into and out of the enclosure.

Abstract: An RF plasma generator configured to ignite and maintain a plasma from one or more processing gases is disclosed. A switch mode power supply is configured to convert a DC voltage from a DC power source to an RF voltage. A resonance circuit is configured to deliver an amount of power to an ignited plasma from the switch mode power supply. A plasma controller is configured to operate the power supply to apply an RF voltage corresponding to the amount of power to the one or more processing gases through the resonance circuit. The RF voltage increases in amplitude and decreases in frequency until the one or more processing gasses are ignited into a plasma. Responsive to detecting ignition of the plasma, the plasma controller is further configured to continuously adjust the frequency of the switch mode power supply to deliver the amount of power to the ignited plasma. The amount of power is a substantially constant amount of power.

Abstract: Certain embodiments provide a method and non-transitory computer readable medium comprising instructions that, when executed by a processor of a processing system, cause the processing system to perform a method for improving operation of a semiconductor processing system. The method of part life estimation generally includes obtaining a chamber part having a first surface portion and second surface portion. A data matrix in the first portion of the chamber part is read. The data matrix has raised features. The first portion of the chamber part is cleaned. Wear on the raised features is evaluated. The part is discarded in response to the wear on the raised feature.

Abstract: A method of reclaiming a used seal includes boiling the used seal in a liquid, and after boiling the used seal in the liquid, baking the used seal. The boiling the used seal may include boiling for a predetermined boiling time in the liquid, and the baking the used seal may include baking the used seal for a predetermined bake time at a predetermined temperature.

Abstract: Disclosed herein is a poly-crystalline protective coating on a surface of a chamber component. The poly-crystalline protective coating may be deposited by thermal spraying and may comprise cubic yttria and monoclinic yttria. At least one of: (1) the ratio of the cubic yttria to monoclinic yttria, (2) the crystallite size of at least one of the cubic yttria or the monoclinic yttria, (3) the atomic ratio of oxygen (O) to yttria (Y), and/or (4) the dielectric properties of the poly-crystalline protective coating may be controlled to obtain consistent chamber performance when switching coated chamber components within a chamber of interest.

Abstract: The present disclosure is directed to a system and method to identify and track parts of a semiconductor processing chamber, as well as the status of the parts, and store status information in a centralized location as status changes over time.

Abstract: Embodiments of the present invention provide apparatus, systems and methods for measuring dissociation of a process gas generated by a RPS. In one embodiment, a method of measuring dissociation of a process gas includes receiving a process gas from a RPS, the process gas including a polyatomic molecule that dissociates into at least one free radical. The method further includes irradiating the process gas with IR radiation at one or more wavelengths, detecting the IR radiation that passes through the process gas, and determining a degree of dissociation of the polyatomic molecule in the process gas based, at least in part, on the detected IR radiation. In one embodiment, the method further comprises modifying one or more settings of the RPS, based, at least in part, on the determined degree of dissociation.

Abstract: An RF plasma generator configured to ignite and maintain a plasma from one or more processing gases is disclosed. A switch mode power supply is configured to convert a DC voltage from a DC power source to an RF voltage. A resonance circuit is configured to deliver an amount of power to an ignited plasma from the switch mode power supply. A plasma controller is configured to operate the power supply to apply an RF voltage corresponding to the amount of power to the one or more processing gases through the resonance circuit. The RF voltage increases in amplitude and decreases in frequency until the one or more processing gasses are ignited into a plasma. Responsive to detecting ignition of the plasma, the plasma controller is further configured to continuously adjust the frequency of the switch mode power supply to deliver the amount of power to the ignited plasma. The amount of power is a substantially constant amount of power.

Abstract: A method of reclaiming a used seal includes boiling the used seal in a liquid, and after boiling the used seal in the liquid, baking the used seal. The boiling the used seal may include boiling for a predetermined boiling time in the liquid, and the baking the used seal may include baking the used seal for a predetermined bake time at a predetermined temperature.

Abstract: A method of processing a workpiece is disclosed, where the interior surfaces of the plasma chamber are first coated using a conditioning gas that contains the desired dopant species. A working gas, which does not contain the desired dopant species, is then introduced and energized to form a plasma. This plasma is used to sputter the desired dopant species from the interior surfaces. This dopant species is deposited on the workpiece. A subsequent implant process may then be performed to implant the dopant into the workpiece. The implant process may include a thermal treatment, a knock in mechanism, or both.

Abstract: Disclosed herein is a poly-crystalline protective coating on a surface of a chamber component. The poly-crystalline protective coating may be deposited by thermal spraying and may comprise cubic yttria and monoclinic yttria. At least one of: (1) the ratio of the cubic yttria to monoclinic yttria, (2) the crystallite size of at least one of the cubic yttria or the monoclinic yttria, (3) the atomic ratio of oxygen (O) to yttria (Y), and/or (4) the dielectric properties of the poly-crystalline protective coating may be controlled to obtain consistent chamber performance when switching coated chamber components within a chamber of interest.

Abstract: A method of processing a workpiece is disclosed, where the interior surfaces of the plasma chamber are first coated using a conditioning gas that contains the desired dopant species. A working gas, which does not contain the desired dopant species, is then introduced and energized to form a plasma. This plasma is used to sputter the desired dopant species from the interior surfaces. This dopant species is deposited on the workpiece. A subsequent implant process may then be performed to implant the dopant into the workpiece. The implant process may include a thermal treatment, a knock in mechanism, or both.

Abstract: Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel.

Abstract: A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.