Patents by Inventor Siddartha Kondoju

Siddartha Kondoju has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memories with memory arrays extending in opposite directions from a semiconductor and their formation
    Patent number: 9312266
    Abstract: Memories and their formation are disclosed. One such memory has a first array of first memory cells extending in a first direction from a first surface of a semiconductor. A second array of second memory cells extends in a second direction, opposite to the first direction, from a second surface of the semiconductor. Both arrays may be non-volatile memory arrays. For example, one of the memory arrays may be a NAND flash memory array, while the other may be a one-time-programmable memory array.
    Type: Grant
    Filed: May 21, 2014
    Date of Patent: April 12, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Sanh D. Tang, John Zahurak, Siddartha Kondoju, Haitao Liu, Nishant Sinha
  • Method of forming a planar surface for a semiconductor device structure, and related methods of forming a semiconductor device structure
    Patent number: 9153451
    Abstract: A method of forming a planar surface for a semiconductor device structure. The method comprises forming a particle film comprising a plurality of discrete particles on a non-planar surface of a semiconductor device structure. The semiconductor device structure is subjected to at least one chemical-mechanical polishing process after forming the particle film on the non-planar surface of the semiconductor device structure. Methods of forming a semiconductor device structure are also described.
    Type: Grant
    Filed: December 12, 2012
    Date of Patent: October 6, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Andrew Dennis Watson Carswell, Wayne Hai-Wei Huang, Siddartha Kondoju, Jin Lu, Suresh Ramakrishnan, Kozaburo Sakai, Sony Varghese, Andrey V. Zagrebelny
  • MEMORIES WITH MEMORY ARRAYS EXTENDING IN OPPOSITE DIRECTIONS FROM A SEMICONDUCTOR AND THEIR FORMATION
    Publication number: 20140256098
    Abstract: Memories and their formation are disclosed. One such memory has a first array of first memory cells extending in a first direction from a first surface of a semiconductor. A second array of second memory cells extends in a second direction, opposite to the first direction, from a second surface of the semiconductor. Both arrays may be non-volatile memory arrays. For example, one of the memory arrays may be a NAND flash memory array, while the other may be a one-time-programmable memory array.
    Type: Application
    Filed: May 21, 2014
    Publication date: September 11, 2014
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Sanh D. Tang, John Zahurak, Siddartha Kondoju, Haitao Liu, Nishant Sinha
  • METHOD OF FORMING A PLANAR SURFACE FOR A SEMICONDUCTOR DEVICE STRUCTURE, AND RELATED METHODS OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE
    Publication number: 20140162455
    Abstract: A method of forming a planar surface for a semiconductor device structure. The method comprises forming a particle film comprising a plurality of discrete particles on a non-planar surface of a semiconductor device structure. The semiconductor device structure is subjected to at least one chemical-mechanical polishing process after forming the particle film on the non-planar surface of the semiconductor device structure. Methods of forming a semiconductor device structure are also described.
    Type: Application
    Filed: December 12, 2012
    Publication date: June 12, 2014
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Andrew Dennis Watson Carswell, Wayne Hai-Wei Huang, Siddartha Kondoju, Jin Lu, Suresh Ramakrishnan, Kozaburo Sakai, Sony Varghese, Andrey V. Zagrebelny
  • Memories with memory arrays extending in opposite directions from a semiconductor and their formation
    Patent number: 8735902
    Abstract: Memories and their formation are disclosed. One such memory has a first array of first memory cells extending in a first direction from a first surface of a semiconductor. A second array of second memory cells extends in a second direction, opposite to the first direction, from a second surface of the semiconductor. Both arrays may be non-volatile memory arrays. For example, one of the memory arrays may be a NAND flash memory array, while the other may be a one-time-programmable memory array.
    Type: Grant
    Filed: May 10, 2010
    Date of Patent: May 27, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Sanh D. Tang, John Zahurak, Siddartha Kondoju, Haitao Liu, Nishant Sinha
  • Methods for removing photoresist defects and a method for processing a semiconductor device structure
    Patent number: 8372754
    Abstract: A method for removing at least one photoresist defect is disclosed. The photoresist defect is exposed to a plasma produced from a source gas including oxygen and a non-oxidizing gas in a plasma reactor, wherein the oxygen is present in the source gas at from 1% by volume to about 89% by volume. The non-oxidizing gas includes a mixture of hydrogen and nitrogen, ammonia or combinations thereof. A method for processing a semiconductor device structure is also disclosed, as are embodiments of the source gas.
    Type: Grant
    Filed: April 11, 2007
    Date of Patent: February 12, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Robert J. Hanson, Siddartha Kondoju
  • MEMORIES AND THEIR FORMATION
    Publication number: 20110272754
    Abstract: Memories and their formation are disclosed. One such memory has a first array of first memory cells extending in a first direction from a first surface of a semiconductor. A second array of second memory cells extends in a second direction, opposite to the first direction, from a second surface of the semiconductor. Both arrays may be non-volatile memory arrays. For example, one of the memory arrays may be a NAND flash memory array, while the other may be a one-time-programmable memory array.
    Type: Application
    Filed: May 10, 2010
    Publication date: November 10, 2011
    Inventors: Sanh D. Tang, John Zahurak, Siddartha Kondoju, Haitao Liu, Nishant Sinha
  • Methods for removing photoresist defects and a source gas for same
    Publication number: 20080254637
    Abstract: A method for removing at least one photoresist defect is disclosed. The photoresist defect is exposed to a plasma produced from a source gas including oxygen and a non-oxidizing gas in a plasma reactor, wherein the oxygen is present in the source gas at from 1% by volume to about 89% by volume. The non-oxidizing gas includes a mixture of hydrogen and nitrogen, ammonia or combinations thereof. A method for processing a semiconductor device structure is also disclosed, as are embodiments of the source gas.
    Type: Application
    Filed: April 11, 2007
    Publication date: October 16, 2008
    Inventors: Robert J. Hanson, Siddartha Kondoju