Patents by Inventor Siegfried Mantl

Siegfried Mantl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10153343
    Abstract: A method for producing a tunnel field-effect transistor (TFET) having a source region, a channel region, and a drain region includes arranging an epitaxial layer on a silicon substrate; applying a gate arrangement having a gate electrode to the epitaxial layer, a gate dielectric being arranged between the gate electrode and the silicon substrate; forming a doped pocket region below the gate dielectric adjacent to the source region; forming a selectively silicidated region in the source region, the selectively silicidated region extending as far as to below a gate; and forming a counter-doped region doped in an opposite way to the pocket region adjacent to the pocket region in the source region by diffusion of dopants out of the silicidated region, as a result of which a tunnel junction parallel to the electric field lines of the gate electrode is achieved.
    Type: Grant
    Filed: November 4, 2015
    Date of Patent: December 11, 2018
    Assignee: FORSCHUNGSZENTRUM JUELICH GMBH
    Inventors: Qing-Tai Zhao, Siegfried Mantl, Sebastian Blaeser
  • Publication number: 20170365663
    Abstract: A method for producing a tunnel field-effect transistor (TFET) having a source region, a channel region, and a drain region includes arranging an epitaxial layer on a silicon substrate; applying a gate arrangement having a gate electrode to the epitaxial layer, a gate dielectric being arranged between the gate electrode and the silicon substrate; forming a doped pocket region below the gate dielectric adjacent to the source region; forming a selectively silicidated region in the source region, the selectively silicidated region extending as far as to below a gate; and forming a counter-doped region doped in an opposite way to the pocket region adjacent to the pocket region in the source region by diffusion of dopants out of the silicidated region, as a result of which a tunnel junction parallel to the electric field lines of the gate electrode is achieved.
    Type: Application
    Filed: November 4, 2015
    Publication date: December 21, 2017
    Inventors: Qing-Tai Zhao, Siegfried Mantl, Sebastian Blaeser
  • Publication number: 20170121845
    Abstract: A method for monolithically depositing a monocrystalline IV-IV layer that glows when excited and that is composed of a plurality of elements of the IV main group, in particular a GeSn or Si—GeSn layer, the IV-IV layer having a dislocation density less than 6 cm?2, on an IV substrate, in particular a silicon or germanium substrate, including the following steps: providing a hydride of a first IV element (A), such as Ge2H6 or Si2H6; providing a halide of a second IV element (B), such as SnCl4; heating the substrate to a substrate temperature that is less than the decomposition temperature of the pure hydride or of a radical formed therefrom and is sufficiently high that atoms of the first element (A) and of the second element (B) are integrated into the surface in crystalline order, wherein the substrate temperature lies, in particular, in a range between 300° C. and 475° C.
    Type: Application
    Filed: May 18, 2015
    Publication date: May 4, 2017
    Inventors: Detlev Grützmacher, Stephan Wirths, Dan Mihai Buca, Siegfried Mantl
  • Publication number: 20150024586
    Abstract: In the method for producing a monocrystalline metal-semiconductor compound on the surface of a semiconducting functional layer, initially a supply layer comprising the metal is applied to the functional layer. Thereafter, the reaction between the metal and the functional layer is triggered by way of annealing. The supply layer ends at no greater than a layer thickness of 5 nm from the surface of the functional layer, or it transitions at no greater than this layer thickness into a region in which the metal diffuses more slowly than in the region that directly adjoins the functional layer. This measure advantageously allows diffusion flow of the metal into the functional layer to be prevented. This depends precisely on whether the metal-semiconductor compound is monocrystalline.
    Type: Application
    Filed: February 16, 2013
    Publication date: January 22, 2015
    Inventors: Qing-Tai Zhao, Lars Knoll, Siegfried Mantl
  • Patent number: 8048220
    Abstract: The invention relates to a method for producing a strained layer. Said method comprises the following steps: placing the layer on a substrate and straining it, structuring the strained layer, relaxing the layer, producing directional off-sets in the layer to be strained. A layered structure produced in this manner has triaxially strained layers.
    Type: Grant
    Filed: September 22, 2005
    Date of Patent: November 1, 2011
    Assignee: Forschungszentrum Julich GmbH
    Inventors: Siegfried Mantl, Bernhard Holländer, Dan Mihai Buca
  • Patent number: 7915148
    Abstract: A silicon on insulator (SOI) substrate is converted into a strained SOI substrate by first providing an SOI substrate having a thin silicon layer and an insulator and at least one first epitaxial relaxing layer on the SOI-substrate. Then a defect region is produced in a layer by implantation of SI ions above the silicon layer of the SOI-substrate. Finally the first layer is relaxed by a thermal treatment in an inert atmosphere to simultaneously strain the silicon layer of the SOI-substrate via dislocation mediated strain transfer and to produce the strained silicon layer directly on the insulator.
    Type: Grant
    Filed: July 2, 2009
    Date of Patent: March 29, 2011
    Assignee: Forschungszentrum Julich GmbH
    Inventor: Siegfried Mantl
  • Publication number: 20090298301
    Abstract: A silicon on insulator (SOI) substrate is converted into a strained SOI substrate by first providing an SOI substrate having a thin silicon layer and an insulator and at least one first epitaxial relaxing layer on the SOI-substrate. Then a defect region is produced in a layer by implantation of SI ions above the silicon layer of the SOI-substrate. Finally the first layer is relaxed by a thermal treatment in an inert atmosphere to simultaneously strain the silicon layer of the SOI-substrate via dislocation mediated strain transfer and to produce the strained silicon layer directly on the insulator.
    Type: Application
    Filed: July 2, 2009
    Publication date: December 3, 2009
    Inventor: Siegfried Mantl
  • Patent number: 7615471
    Abstract: The invention relates to a method for producing a tensioned layer on a substrate involving the following steps: producing a defect area in a layer adjacent to the layer to be tensioned, and; relaxing at least one layer adjacent to the layer to be tensioned. Additional layers can be epitaxially deposited. Layer structures formed in this manner are advantageously suited for components of all types.
    Type: Grant
    Filed: April 8, 2004
    Date of Patent: November 10, 2009
    Assignee: Forschungszentrum Julich GmbH
    Inventor: Siegfried Mantl
  • Patent number: 7528058
    Abstract: The invention relates to a method for the production of passivated defining surfaces (6a, 6b) between a first layer, such as a silicide (5), and an adjacent layer. Passivating elements, such as S, Se and Te are used in said layer structure during said method and the first layer is enriched on the adjacent layer during heat treatment on at least one defining surface. Schottky barriers can be reduced and output work of the transition can be adjusted. Components, e.g. Schottky barrier MOSFETs with small or negative Schottky barriers arc disclosed as source and/or drain contacts and spin transistors.
    Type: Grant
    Filed: June 19, 2004
    Date of Patent: May 5, 2009
    Assignee: Forschungzentrum Julich GmbH
    Inventors: Siegfried Mantl, Qing-Tai Zhao
  • Patent number: 7442657
    Abstract: A stress relaxed monocrystalline layer structure is made on a nonlattice matched substrate by first applying to the substrate epitaxially a monocrystalline layer structure comprising at least one layer, the monocrystalline layer structure forming with the substrate an interface that has a greater lattice parameter mismatch on the substrate than within the monocrystalline layer structure. The monocrystalline layer is irradiated by directing an ion beam to generate predominantly point effects in the monocrystalline layer structure and an extended defect region in the substrate proximal to the monocrystalline layer structure. Then the monocrystalline layer structure is thermally treated in a temperature range of 550° C. to 1000° C. in an inert, reducing or oxidizing atmosphere so that the monocrystalline layer structure above the extended defect region is stress relaxed and has a defect density less than 106 cm?2 and a surface roughness of less than 1 nm.
    Type: Grant
    Filed: February 6, 2004
    Date of Patent: October 28, 2008
    Assignee: Forschungszentrum Julich GmbH
    Inventor: Siegfried Mantl
  • Patent number: 7416965
    Abstract: The invention relates to a method for producing a layer structure comprising a strained layer on a substrate. The inventive method comprises the steps of producing a defect area in a layer adjoining the layer to be strained, and relaxing at least one layer adjoining the layer to be strained. The defect area is especially produced in the substrate. Additional layers can be epitactically grown. Layer structures so produced are especially suitable for producing various types of components.
    Type: Grant
    Filed: April 15, 2004
    Date of Patent: August 26, 2008
    Assignee: Forschungszentrum Julich GmbH
    Inventors: Siegfried Mantl, Bernhard Holländer
  • Publication number: 20080067544
    Abstract: The invention relates to a method for producing a strained layer. Said method comprises the following steps: placing the layer on a substrate and straining it, structuring the strained layer, relaxing the layer, producing directional off-sets in the layer to be strained. A layered structure produced in this manner has triaxially strained layers.
    Type: Application
    Filed: September 22, 2005
    Publication date: March 20, 2008
    Inventors: Siegfried Mantl, Bernhard Hollander, Dan Mihai Buca
  • Publication number: 20060275968
    Abstract: The invention relates to a method for the production of passivated defining surfaces (6a, 6b) between a first layer, such as a silicide (5), and an adjacent layer. Passivating elements, such as S, Se and Te are used in said layer structure during said method and the first layer is enriched on the adjacent layer during heat treatment on at least one defining surface. Schottky barriers can be reduced and output work of the transition can be adjusted. Components, e.g. Schottky barrier MOSFETs with small or negative Schottky barriers arc disclosed as source and/or drain contacts and spin transistors.
    Type: Application
    Filed: June 19, 2004
    Publication date: December 7, 2006
    Inventors: Siegfried Mantl, Qing-Tai Zhao
  • Publication number: 20060220127
    Abstract: The invention relates to a method for producing a tensioned layer on a substrate involving the following steps: producing a defect area in a layer adjacent to the layer to be tensioned, and; relaxing at least one layer adjacent to the layer to be tensioned. Additional layers can be epitaxially deposited. Layer structures formed in this manner are advantageously suited for components of all types.
    Type: Application
    Filed: April 8, 2004
    Publication date: October 5, 2006
    Applicant: FORSCHUNGSZENTRUM JULICH GMBH
    Inventor: Siegfried Mantl
  • Publication number: 20060211221
    Abstract: The invention relates to a method for producing a layer structure comprising a strained layer on a substrate. The inventive method comprises the steps of producing a defect area in a layer adjoining the layer to be strained, and relaxing at least one layer adjoining the layer to be strained. The defect area is especially produced in the substrate. Additional layers can be epitactically grown. Layer structures so produced are especially suitable for producing various types of components.
    Type: Application
    Filed: April 15, 2004
    Publication date: September 21, 2006
    Inventors: Siegfried Mantl, Bernhard Hollander
  • Patent number: 7084075
    Abstract: The invention relates to a method for the production of structures in the nanometer range from larger, existing structures. An elastic strain field in generated in an already structured layer and optionally in a substrate. A strain-dependent diffusion and reaction process subsequently takes place, wherein the existing structure can be reduced in a reproducible manner by means of material transport.
    Type: Grant
    Filed: November 16, 2002
    Date of Patent: August 1, 2006
    Assignee: Forschungszentrum Julich GmbH
    Inventors: Patrick Kluth, Quing-Tai Zhao, Siegfried Mantl
  • Publication number: 20060166475
    Abstract: The invention relates to a method for the production of a monocrystalline, stress-relaxed layer structure having one or several layers on a substrate with different grid structure. In a special embodiment, the method can be advantageously used for the production of relaxed silicon on a stress-related Si—Ge layer structure. The invention also refers to the utilization of said layer system in components such as MOSFETs, MODFETs, resonant tunnel diodes, photodetectors or quantum cascade lasers.
    Type: Application
    Filed: February 6, 2004
    Publication date: July 27, 2006
    Inventor: Siegfried Mantl
  • Publication number: 20050217566
    Abstract: The invention relates to a method for producing one or more monocrystalline layers, each with a different lattice structure, on one plane, for an electronic component, in order to produce a system on a chip. The invention also relates to a component containing one or more layers of this type, such as MOSFETs, MODFETs, resonant tunnel diodes and/or photodetectors.
    Type: Application
    Filed: April 22, 2003
    Publication date: October 6, 2005
    Inventors: Siegfried Mantl, Bernhard Hollander, Quing-Tai Zhao
  • Publication number: 20050042870
    Abstract: The invention relates to a method for the production of structures in the nanometer range from larger, existing structures An elastic strain field in generated in an already structured layer and optionally in a substrate. A strain-dependent diffusion and reaction process subsequently takes place, wherein the existing structure can be reduced in a reproducible manner by means of material transport.
    Type: Application
    Filed: November 16, 2002
    Publication date: February 24, 2005
    Inventors: Patrick Kluth, Quing-Tai Zhao, Siegfried Mantl
  • Patent number: 6648987
    Abstract: The invention relates to a method for producing a layer with a sub-micrometre structure on a substrate. First, a layer is formed on the substrate. Agents for creating elastic strains are then formed in at least one predetermined position on the layer and the layer is then subjected to a strain-dependent solid-state reaction. This results in material separating and consequently, in the layer being structured in this position.
    Type: Grant
    Filed: May 8, 2001
    Date of Patent: November 18, 2003
    Assignee: Forschungszentrum Julich GmbH
    Inventors: Siegfried Mantl, Ludger Kappius, Qing-Tai Zhao, Armin Antons