Abstract: The invention relates to a method for the production of structures in the nanometer range from larger, existing structures An elastic strain field in generated in an already structured layer and optionally in a substrate. A strain-dependent diffusion and reaction process subsequently takes place, wherein the existing structure can be reduced in a reproducible manner by means of material transport.

Abstract: The invention relates to a method for producing a layer with a sub-micrometre structure on a substrate. First, a layer is formed on the substrate. Agents for creating elastic strains are then formed in at least one predetermined position on the layer and the layer is then subjected to a strain-dependent solid-state reaction. This results in material separating and consequently, in the layer being structured in this position.

Abstract: The invention relates to a method for the production of a monocrystalline layer on a substrate with a non-adapted lattice. To this end, a monocrystalline substrate with a buried amply defective layer and a monocrystalline layer produce thereon are used. The buried amply defective layer can be produced by hydrogen implantation.

Abstract: A process for producing a layered structure in which a silicide layer on a silicon substrate is subjected to local oxidation to cause the boundary layer side of the silicide layer to grow into the silicon substrate.

Abstract: A buried amorphous layer on a crystalline substrate with a monocrystalline surface layer, which is transformed into a mixed-crystal or chemical compound, avoids the formation of lattice defects at the interface even where the lattice parameters of the substrate and the monocrystalline layer are not matched.

Abstract: An epitaxial growth of a first component of a multilayer stack for use in optical, electro-optical and electronic or magnetic components, e.g. on a silicon wafer, can be formed by depositing a second component in a form in which that second component produces a precipitate or inclusions in the first component which with continued deposition may be partly replaced by a third component so that the precipitate itself is buried in a monocrystalline structure and, after a thermal treatment in which the precipitate coalesces, a buried layer is formed of the second component or a compound thereof with, say, the first component, in that monocrystalline structure.