Patents by Inventor Siegmar Kugler

Siegmar Kugler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160282271
    Abstract: A method is provided for a full-area optical characterization of an optoelectronic semiconductor material which is provided for producing a plurality of optoelectronic semiconductor chips and which has a band gap which specifies a characteristic wavelength of the semiconductor material. The method includes full-area irradiating a major surface of the optoelectronic semiconductor material with light having an excitation wavelength which is less than the characteristic wavelength of the semiconductor material, with the full-area irradiating generating electron-hole pairs in the semiconductor material. The method further includes full-area detecting a recombination radiation having the characteristic wavelength which is emitted as a result of recombination of the electron-hole pairs from the major surface of the semiconductor material. A device for carrying out the method is also provided.
    Type: Application
    Filed: November 14, 2014
    Publication date: September 29, 2016
    Inventors: Jens EBBECKE, Siegmar KUGLER, Tobias MEYER, Matthias PETER
  • Patent number: 7875961
    Abstract: A semiconductor substrate, of GaAs with a semiconductor layer sequence applied on top of the substrate. The semiconductor layer sequence comprises a plurality of semiconductor layers of Al1-yGayAs1-xPx with 0?x?1 and 0?y?1. A number of the semiconductor layers respectively comprising a phosphorus component x which is greater than in a neighboring semiconductor layer lying thereunder in the direction of growth of the semiconductor layer sequence. Two semiconductor layers directly preceding the uppermost semiconductor layer of the semiconductor layer sequence have a smaller lattice constant than the uppermost layer.
    Type: Grant
    Filed: November 19, 2009
    Date of Patent: January 25, 2011
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Norbert Linder, Günther Grönninger, Peter Heidborn, Klaus Streubel, Siegmar Kugler
  • Publication number: 20100065890
    Abstract: A semiconductor substrate, of GaAs with a semiconductor layer sequence applied on top of the substrate. The semiconductor layer sequence comprises a plurality of semiconductor layers of Al1-yGayAs1-xPx with 0?x?1 and 0?y?1. A number of the semiconductor layers respectively comprising a phosphorus component x which is greater than in a neighboring semiconductor layer lying thereunder in the direction of growth of the semiconductor layer sequence. Two semiconductor layers directly preceding the uppermost semiconductor layer of the semiconductor layer sequence have a smaller lattice constant than the uppermost layer.
    Type: Application
    Filed: November 19, 2009
    Publication date: March 18, 2010
    Inventors: Norbert Linder, Günther Grönninger, Peter Heidborn, Klaus Streubel, Siegmar Kugler
  • Patent number: 7306960
    Abstract: The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.
    Type: Grant
    Filed: December 19, 2005
    Date of Patent: December 11, 2007
    Assignee: Osram GmbH
    Inventors: Georg Bogner, Siegmar Kugler, Ernst Nirschl, Raimund Oberschmid, Karl-Heinz Schlereth, Olaf Schoenfeld, Norbert Stath, Gerald Neumann
  • Publication number: 20070090396
    Abstract: A semiconductor substrate (1) of GaAs with a semiconductor layer sequence (2) applied on top. The semiconductor layer sequence (2) contains a plurality of semiconductor layers (3, 4, 5, 6, 7) of Al1?yGayAs1?xPx with 0?x?1 and 0?y?1, the phosphorus component x in a number of the semiconductor layers respectively being greater than in a neighboring semiconductor layer lying thereunder in the direction of growth. Such a semiconductor substrate may be advantageously used as a quasi-substrate substrate (8) for growing further semiconductor layers (28) which have a smaller lattice constant than GaAs.
    Type: Application
    Filed: September 28, 2006
    Publication date: April 26, 2007
    Applicant: Osram Opto Semiconductors GmbH
    Inventors: Norbert Linder, Gunther Gronninger, Peter Heidborn, Klaus Streubel, Siegmar Kugler
  • Publication number: 20060138439
    Abstract: The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.
    Type: Application
    Filed: December 19, 2005
    Publication date: June 29, 2006
    Inventors: Georg Bogner, Siegmar Kugler, Ernst Nirschl, Raimund Oberschmid, Karl-Heinz Schlereth, Olaf Schoenfeld, Norbert Stath, Gerald Neumann
  • Patent number: 7026657
    Abstract: The invention concerns a light-emitting diode chip (1) comprising a radiation-emitting active region (32) and a window layer (2). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region (32) is smaller than the cross-sectional area of the window layer (2) available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.
    Type: Grant
    Filed: April 19, 2001
    Date of Patent: April 11, 2006
    Assignee: Osram GmbH
    Inventors: Georg Bogner, Siegmar Kugler, Ernst Nirschl, Raimund Oberschmid, Karl-Heinz Schlereth, Olaf Schoenfeld, Norbert Stath, Gerald Neumann
  • Publication number: 20040036080
    Abstract: The invention concerns a light-emitting diode chip (1) comprising a radiation-emitting active region (32) and a window layer (2). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region (32) is smaller than the cross-sectional area of the window layer (2) available for the decoupling of light.
    Type: Application
    Filed: August 11, 2003
    Publication date: February 26, 2004
    Inventors: Georg Bogner, Siegmar Kugler, Ernst Nirschl, Raimund Oberschmid, Karl-Heinz Schlereth, Olaf Schoenfeld, Norbert Stath, Gerald Neumann