Patents by Inventor Sohei Manabe

Sohei Manabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10103193
    Abstract: An apparatus and method for a low dark current floating diffusion is discussed. An example method includes coupling a photodiode to a floating diffusion through a transfer gate where a gate terminal of the transfer gate is provided a first voltage, resetting the floating diffusion, repetitively sampling image charge on the photodiode a plurality of times, where the sampled image charge is coupled to the floating diffusion, and where the gate terminal of the transfer gate is provided a second voltage less than the first voltage during each sampling of the image charge, while repetitively sampling the image charge, coupling an additional capacitance to the floating diffusion, where a first capacitance voltage is applied to the additional capacitance during the sampling, and performing correlated double sampling of the sampled image charge.
    Type: Grant
    Filed: August 3, 2017
    Date of Patent: October 16, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto
  • Patent number: 10062722
    Abstract: An image sensor includes a pixel array having plurality of pixel cells arranged into a plurality of rows and a plurality of columns of pixel cells in a first semiconductor die. A plurality of pixel support circuits are arranged in a second semiconductor die that is stacked and coupled together with the first semiconductor die. A plurality of interconnect lines are coupled between the first and second semiconductor dies, and each one of the plurality of pixel cells is coupled to a corresponding one of the plurality of pixel support circuits through a corresponding one plurality of interconnect lines. A plurality of shield bumps are disposed proximate to corners of the pixel cells in the pixel array and between the first and second semiconductor dies such that each one of the plurality of shield bumps is disposed between adjacent interconnect lines along a diagonal of the pixel array.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: August 28, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto, Vincent Venezia, Boyd Albert Fowler, Eric A. G. Webster
  • Patent number: 10044960
    Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: August 7, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Duli Mao, Trygve Willassen, Johannes Solhusvik, Keiji Mabuchi, Gang Chen, Sohei Manabe, Dyson H. Tai, Bill Phan, Oray Orkun Cellek, Zhiqiang Lin, Siguang Ma, Dajiang Yang, Boyd Albert Fowler
  • Publication number: 20180151610
    Abstract: A method of backside illuminated image sensor fabrication includes forming a plurality of photodiodes in a semiconductor material, where the plurality of photodiodes are disposed to receive image light through a backside of the backside illuminated image sensor. The method further includes forming a transfer gate coupled to extract image charge from a photodiode in the plurality of photodiodes, and forming a storage gate coupled to the transfer gate to receive the image charge. Forming the storage gate includes forming an optical shield in the semiconductor material; depositing a gate electrode proximate to a frontside of the semiconductor material; and implanting a storage node in the semiconductor material, where the storage node is disposed in the semiconductor material between the optical shield and the gate electrode.
    Type: Application
    Filed: October 31, 2017
    Publication date: May 31, 2018
    Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto, Dajiang Yang
  • Patent number: 9967504
    Abstract: A pixel circuit for use in an image sensor includes an unpinned photodiode disposed in a semiconductor material. The unpinned photodiode adapted to photogenerate charge carriers in response to incident light. A floating diffusion is disposed in the semiconductor and coupled to receive the charge carriers photogenerated in the unpinned photodiode. A transfer transistor is disposed in the semiconductor material and coupled between the unpinned photodiode and the floating diffusion. The transfer transistor is adapted to be switched on to transfer the charge carriers photogenerated in the unpinned photodiode to the floating diffusion. A boost capacitor is disposed over a surface of the semiconductor material proximate to the unpinned photodiode. The boost capacitor is coupled to receive a photodiode boost signal while the transfer transistor is switched on to further drive the charge carriers photogenerated in the unpinned photodiode to the floating diffusion.
    Type: Grant
    Filed: April 6, 2017
    Date of Patent: May 8, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto, Gang Chen
  • Publication number: 20180124372
    Abstract: An active depth imaging system and method of operating the same captures illuminator-on and illuminator-off image data with each of a first and second imager. The illuminator-on image data includes information representing an imaged scene and light emitted from an illuminator and reflected off of objects within the imaged scene. The illuminator-off image data includes information representing the imaged scene without the light emitted from the illuminator. For each image set captured by the first and second imagers, illuminator-off image data is subtracted from the illuminator-on image data to identify the illuminated light within the scene. The depth of an object at which the light is incident on then is determined by the subtracted image data of the first and second imagers.
    Type: Application
    Filed: November 2, 2016
    Publication date: May 3, 2018
    Inventors: Zheng Yang, Eiichi Funatsu, Sohei Manabe, Keiji Mabuchi, Dajiang Yang, Duli Mao, Bowei Zhang
  • Publication number: 20180098008
    Abstract: Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity.
    Type: Application
    Filed: October 4, 2016
    Publication date: April 5, 2018
    Inventors: Duli Mao, Trygve Willassen, Johannes Solhusvik, Keiji Mabuchi, Gang Chen, Sohei Manabe, Dyson H. Tai, Bill Phan, Oray Orkun Cellek, Zhiqiang Lin
  • Publication number: 20180097030
    Abstract: An image sensor includes a pixel array having plurality of pixel cells arranged into a plurality of rows and a plurality of columns of pixel cells in a first semiconductor die. A plurality of pixel support circuits are arranged in a second semiconductor die that is stacked and coupled together with the first semiconductor die. A plurality of interconnect lines are coupled between the first and second semiconductor dies, and each one of the plurality of pixel cells is coupled to a corresponding one of the plurality of pixel support circuits through a corresponding one plurality of interconnect lines. A plurality of shield bumps are disposed proximate to corners of the pixel cells in the pixel array and between the first and second semiconductor dies such that each one of the plurality of shield bumps is disposed between adjacent interconnect lines along a diagonal of the pixel array.
    Type: Application
    Filed: October 4, 2016
    Publication date: April 5, 2018
    Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto, Vincent Venezia, Boyd Albert Fowler, Eric A. G. Webster
  • Patent number: 9936153
    Abstract: Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: April 3, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Duli Mao, Trygve Willassen, Johannes Solhusvik, Keiji Mabuchi, Gang Chen, Sohei Manabe, Dyson H. Tai, Bill Phan, Oray Orkun Cellek, Zhiqiang Lin
  • Patent number: 9923024
    Abstract: An imaging sensor pixel comprises a highly resistive N? doped semiconductor layer with a front side and a back side. At the front side, there are at least a light sensing region, a transfer gate adjacent to the light sensing region and a P-well region. The P-well region surrounds the light sensing region and the transfer gate region, and comprises at least a floating diffusion region and a first electrode outside of the floating diffusion region, wherein a first negative voltage is applied to the first electrode. The transfer gate couples between the light sensing region and the floating diffusion region. At the back side, there is a back side P+ doped layer comprising a second electrode formed on the back side P+ doped layer, wherein a second negative voltage is applied to the second electrode. The second negative voltage is more negative than the first negative voltage.
    Type: Grant
    Filed: May 26, 2017
    Date of Patent: March 20, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Keiji Mabuchi, Sohei Manabe, Duli Mao
  • Publication number: 20180041723
    Abstract: A pixel array for use in a high dynamic range image sensor includes a plurality of pixels arranged in a plurality of rows and columns in the pixel array. Each one of the pixels includes a linear subpixel and a log subpixel disposed in a semiconductor material. The linear subpixel is coupled to generate a linear output signal having a linear response, and the log subpixel is coupled to generate a log output signal having a logarithmic response in response to the incident light. A bitline is coupled to the linear subpixel and to the log subpixel to receive the linear output signal and the log output signal. The bitline is one of a plurality of bitlines coupled to the plurality of pixels. Each one of the plurality of bitlines is coupled to a corresponding grouping of the plurality of pixels.
    Type: Application
    Filed: August 4, 2016
    Publication date: February 8, 2018
    Inventors: Keiji Mabuchi, Dyson H. Tai, Oray Orkun Cellek, Duli Mao, Sohei Manabe
  • Publication number: 20180006076
    Abstract: An image sensor includes a substrate and a plurality of infrared pixels formed in a front side of the substrate and configured to detect infrared light incident on the front side of the substrate. Each of the infrared pixels includes a photodiode, a region free of implants located above the photodiode, and a photogate formed over the substrate and above the photodiode. The image sensor also includes a plurality of color pixels dispersed among the infrared pixels, where each of the color pixels includes a pinned photodiode and is configured to detect visible light. The photodiode of each of the infrared pixels can include a deep charge-accumulation region underlying the pinned photodiode(s) of one or more neighboring color pixel(s). Methods of manufacturing also described and include forming the deep charge-accumulation regions and associated elements prior to forming any implant-blocking elements (e.g., polysilicon photogates) over the substrate.
    Type: Application
    Filed: June 30, 2016
    Publication date: January 4, 2018
    Applicant: OmniVision Technologies, Inc.
    Inventors: Takayuki Goto, Dajiang Yang, Keiji Mabuchi, Sohei Manabe
  • Patent number: 9859311
    Abstract: A backside illuminated image sensor includes a semiconductor material with a plurality of photodiodes disposed in the semiconductor material, and a transfer gate electrically coupled to a photodiode in the plurality of photodiodes to extract image charge from the photodiode. The image sensor also includes a storage gate electrically coupled to the transfer gate to receive the image charge from the transfer gate. The storage gate has a gate electrode disposed proximate to a frontside of the semiconductor material, an optical shield disposed in the semiconductor material, and a storage node disposed between the gate electrode and the optical shield. The optical shield is optically aligned with the storage node to prevent the image light incident on the backside illuminated image sensor from reaching the storage node.
    Type: Grant
    Filed: November 28, 2016
    Date of Patent: January 2, 2018
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Keiji Mabuchi, Takayuki Goto, Dajiang Yang
  • Publication number: 20170347047
    Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.
    Type: Application
    Filed: May 25, 2016
    Publication date: November 30, 2017
    Inventors: Duli Mao, Trygve Willassen, Johannes Solhusvik, Keiji Mabuchi, Gang Chen, Sohei Manabe, Dyson H. Tai, Bill Phan, Oray Orkun Cellek, Zhiqiang Lin, Siguang Ma, Dajiang Yang, Boyd Albert Fowler
  • Patent number: 9749569
    Abstract: High speed rolling image sensor includes pixel array disposed in first semiconductor die, readout circuits disposed in second semiconductor die and conductors. Pixel array is partitioned into pixel sub-arrays (PSAs). Each of the PSAs includes a plurality of pixels. Pixel groups include pixels that are non-contiguous, non-overlapping and distinct. Each pixel group includes pixels from different PSAs. Each pixel group is coupled to a corresponding analog-to-digital converter and memory unit tiles (ADMs) respectively included in readout circuits. ADMs respectively include (i) analog-to-digital (ADC) circuits that convert the image data from pixel groups from analog to digital to obtain ADC outputs, and (ii) memory units to store ADC outputs. Conductors are coupling pixel array to ADMs. Conductors include number of conductors per column of pixel array. Number of conductors per column of pixel array may be equal to number of pixels in PSA arranged in same column. Other embodiments are described.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: August 29, 2017
    Assignee: OmniVision Technologies, Inc.
    Inventors: Keiji Mabuchi, Sohei Manabe
  • Patent number: 9711546
    Abstract: An image sensor pixel includes a first photodiode and a second photodiode disposed in a semiconductor material. The first photodiode has a first doped region, a first lightly doped region, and a first highly doped region. The second photodiode has a second full well capacity substantially equal to a first full well capacity of the first photodiode, and includes a second doped region, a second lightly doped region, and a second highly doped region. The image sensor pixel also includes a first microlens optically coupled to direct a first amount of image light to the first photodiode, and a second microlens optically coupled to direct a second amount of image light to the second photodiode. The first amount of image light is larger than the second amount of image light.
    Type: Grant
    Filed: March 2, 2016
    Date of Patent: July 18, 2017
    Assignee: OmniVision Technologies, Inc.
    Inventors: Jeong-Ho Lyu, Sohei Manabe
  • Publication number: 20170180663
    Abstract: High speed rolling image sensor includes pixel array disposed in first semiconductor die, readout circuits disposed in second semiconductor die and conductors. Pixel array is partitioned into pixel sub-arrays (PSAs). Each of the PSAs includes a plurality of pixels. Pixel groups include pixels that are non-contiguous, non-overlapping and distinct. Each pixel group includes pixels from different PSAs. Each pixel group is coupled to a corresponding analog-to-digital converter and memory unit tiles (ADMs) respectively included in readout circuits. ADMs respectively include (i) analog-to-digital (ADC) circuits that convert the image data from pixel groups from analog to digital to obtain ADC outputs, and (ii) memory units to store ADC outputs. Conductors are coupling pixel array to ADMs. Conductors include number of conductors per column of pixel array. Number of conductors per column of pixel array may be equal to number of pixels in PSA arranged in same column. Other embodiments are described.
    Type: Application
    Filed: December 22, 2015
    Publication date: June 22, 2017
    Inventors: Keiji Mabuchi, Sohei Manabe
  • Patent number: 9666631
    Abstract: An image sensor pixel includes a first photodiode, a second photodiode, a first microlens, a second microlens, and a filter. The first and second photodiode are disposed adjacent to each other in a semiconductor material. The first photodiode has a first full well capacity that is substantially equal to a second full well capacity of the second photodiode. The first microlens is disposed over the first photodiode and the second microlens is disposed over the second photodiode. The second microlens is substantially identical to the first microlens. The filter is disposed between the second microlens and the second photodiode to reduce an intensity of the image light incident upon the second photodiode. The filter does not substantially affect the image light directed toward the first photodiode.
    Type: Grant
    Filed: May 19, 2014
    Date of Patent: May 30, 2017
    Assignee: OmniVision Technologies, Inc.
    Inventors: Jeong-Ho Lyu, Sohei Manabe
  • Patent number: 9608019
    Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode and a second photodiode. The first photodiode include a first doped region, a first lightly doped region, and a first highly doped region disposed between the first doped region and the first lightly doped region. The second photodiode disposed in has a second full well capacity substantially equal to a first full well capacity of the first photodiode. The second photodiode includes a second doped region, a second lightly doped region, and a second highly doped region disposed between the second doped region and the second lightly doped region. A first aperture sizer is disposed above the second photodiode to limit image light received by the second photodiode to a second amount that is less than a first amount of image light received by the first photodiode.
    Type: Grant
    Filed: March 2, 2016
    Date of Patent: March 28, 2017
    Assignee: OmniVision Technologies, Inc.
    Inventors: Jeong-Ho Lyu, Sohei Manabe
  • Patent number: 9496304
    Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is coupled to selectively transfer the image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a doped semiconductor material disposed inside the DTI structure that is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.
    Type: Grant
    Filed: May 5, 2015
    Date of Patent: November 15, 2016
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sing-Chung Hu, Rongsheng Yang, Gang Chen, Howard E. Rhodes, Sohei Manabe, Dyson H. Tai