Patents by Inventor Sohei Manabe

Sohei Manabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120086844
    Abstract: A method of operation of a backside illuminated (BSI) pixel array includes acquiring an image signal with a first photosensitive region of a first pixel within the BSI pixel array. The image signal is generated in response to light incident upon a backside of the first pixel. The image signal acquired by the first photosensitive region is transferred to pixel circuitry of the first pixel disposed on a frontside of the first pixel opposite the backside. The pixel circuitry at least partially overlaps the first photosensitive region of the first pixel and extends over die real estate above a second photosensitive region of a second pixel adjacent to the first pixel such that the second pixel donates die real estate unused by the second pixel to the first pixel to accommodate larger pixel circuitry than would fit within the first pixel.
    Type: Application
    Filed: December 15, 2011
    Publication date: April 12, 2012
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Tiejun Dai, Hsin-Chih Tai, Sohei Manabe, Hidetoshi Nozaki, Howard E. Rhodes
  • Patent number: 8101978
    Abstract: A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging sensor pixel. The pixel circuitry includes transistor pixel circuitry disposed within the semiconductor die between a frontside of the semiconductor die and the photodiode region. At least a portion of the pixel circuitry overlaps the photodiode region.
    Type: Grant
    Filed: March 21, 2008
    Date of Patent: January 24, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventors: Tiejun Dai, Hsin-Chih Tai, Sohei Manabe, Hidetoshi Nozaki, Howard E. Rhodes
  • Patent number: 8089036
    Abstract: An image sensor includes a photodiode to accumulate an image charge and a storage transistor to store the image charge. A transfer transistor is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge to a readout node and a reset transistor is coupled to the readout node. A controller is configured to apply a negative voltage to a gate of the storage transistor before activating the gate of the storage transistor to store the image charge.
    Type: Grant
    Filed: April 30, 2009
    Date of Patent: January 3, 2012
    Assignee: OmniVision Technologies, Inc.
    Inventor: Sohei Manabe
  • Publication number: 20110284982
    Abstract: Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a dopant from the doped silicon layer into the substrate. Embodiments of an apparatus comprising a pixel formed on a front side of a thinned substrate, a doped silicon layer formed on a backside of the thinned substrate, and a region in the thinned substrate, and near the backside, where a dopant has diffused from the doped silicon layer into the thinned substrate. Other embodiments are disclosed and claimed.
    Type: Application
    Filed: August 4, 2011
    Publication date: November 24, 2011
    Applicant: OMNIVISION TECHNOLOGIES INC.
    Inventor: Sohei Manabe
  • Patent number: 8017427
    Abstract: Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a dopant from the doped silicon layer into the substrate. Embodiments of an apparatus comprising a pixel formed on a front side of a thinned substrate, a doped silicon layer formed on a backside of the thinned substrate, and a region in the thinned substrate, and near the backside, where a dopant has diffused from the doped silicon layer into the thinned substrate. Other embodiments are disclosed and claimed.
    Type: Grant
    Filed: December 31, 2008
    Date of Patent: September 13, 2011
    Assignee: OmniVision Technologies, Inc.
    Inventor: Sohei Manabe
  • Publication number: 20100323470
    Abstract: An array of pixels is formed using a semiconductor layer having a frontside and a backside through which incident light is received. Each pixel typically includes a photosensitive region formed in the semiconductor layer and a trench formed adjacent to the photosensitive region. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.
    Type: Application
    Filed: August 10, 2010
    Publication date: December 23, 2010
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Vincent Venezia, Hsin-Chih Tai, Duli Mao, Sohei Manabe, Howard E. Rhodes, Wei Dong Qian
  • Patent number: 7847834
    Abstract: An apparatus for measuring the power frequency of a light source includes a photo-sensitive transistor, a modulators and a logic unit. The photo-sensitive transistor generates an electrical signal that is responsive to light incident thereon from the light source. The modulator generates a modulated signal based on the electrical signal that toggles at a rate substantially proportional to the power frequency of the light source. The logic unit is coupled to receive the modulated signal and determine its toggling frequency.
    Type: Grant
    Filed: November 19, 2007
    Date of Patent: December 7, 2010
    Assignee: OmniVision Technologies, Inc.
    Inventors: Tiejun Dai, Sohei Manabe, Hongtao Yao, Jingzhou Zhang, Liping Deng
  • Publication number: 20100276574
    Abstract: An image sensor includes a photodiode to accumulate an image charge and a storage transistor to store the image charge. A transfer transistor is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge to a readout node and a reset transistor is coupled to the readout node. A controller is configured to apply a negative voltage to a gate of the storage transistor before activating the gate of the storage transistor to store the image charge.
    Type: Application
    Filed: April 30, 2009
    Publication date: November 4, 2010
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventor: Sohei Manabe
  • Patent number: 7825966
    Abstract: An image sensor has at least two photodiodes in each unit pixel. A high dynamic range is achieved by selecting different exposure times for the photodiodes. Additionally, blooming is reduced. The readout timing cycle is chosen so that the short exposure time photodiodes act as drains for excess charge overflowing from the long exposure time photodiodes. To improve draining of excess charge, the arrangement of photodiodes may be further selected so that long exposure time photodiodes are neighbored along vertical and horizontal directions by short exposure time photodiodes. A micro-lens array may also be provided in which light is preferentially coupled to the long exposure time photodiodes to improve sensitivity.
    Type: Grant
    Filed: October 15, 2007
    Date of Patent: November 2, 2010
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Ashish Shah, Sasidhar Saladi, William Qian, Hidetoshi Nozaki, Nagaraja Satyadev, Hsin-Chih (Dyson) Tai, Howard M. Rhodes
  • Patent number: 7820498
    Abstract: A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that can include a photodiode region, an insulation layer, and a reflective layer. The photodiode is typically formed in the frontside of the semiconductor substrate. A surface shield layer can be formed on the frontside of the photodiode region. A light reflecting layer can be formed using silicided polysilicon on the frontside of the sensor. The photodiode region receives light from the back surface of the semiconductor substrate. When a portion of the received light propagates through the photodiode region to the light reflecting layer, the light reflecting layer reflects the portion of light received from the photodiode region towards the photodiode region. The silicided polysilicon light reflecting layer also forms a gate of a transistor for establishing a conductive channel between the photodiode region and a floating drain.
    Type: Grant
    Filed: August 27, 2008
    Date of Patent: October 26, 2010
    Assignee: OmniVision Technologies, Inc.
    Inventors: Sohei Manabe, Hsin-Chih Tai, Vincent Venezia, Duli Mao, Yin Qian
  • Patent number: 7800192
    Abstract: An array of pixels is formed using a substrate having a frontside and a backside that is for receiving incident light. Each pixel typically includes metallization layers included in the frontside of the substrate, a photosensitive region formed in the backside of the substrate, and a trench formed around the photosensitive region in the backside of the substrate. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.
    Type: Grant
    Filed: September 4, 2008
    Date of Patent: September 21, 2010
    Assignee: OmniVision Technologies, Inc.
    Inventors: Vincent Venezia, Hsin-Chih Tai, Duli Mao, Sohei Manabe, Howard E. Rhodes, Wei Dong Qian
  • Publication number: 20100164042
    Abstract: Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a dopant from the doped silicon layer into the substrate. Embodiments of an apparatus comprising a pixel formed on a front side of a thinned substrate, a doped silicon layer formed on a backside of the thinned substrate, and a region in the thinned substrate, and near the backside, where a dopant has diffused from the doped silicon layer into the thinned substrate. Other embodiments are disclosed and claimed.
    Type: Application
    Filed: December 31, 2008
    Publication date: July 1, 2010
    Applicant: OMNIVISION TECHNOLOGIES INC.
    Inventor: Sohei Manabe
  • Publication number: 20090200588
    Abstract: A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that can include a photodiode region, an insulation layer, and a reflective layer. The photodiode is typically formed in the frontside of the semiconductor substrate. A surface shield layer can be formed on the frontside of the photodiode region. A light reflecting layer can be formed using silicided polysilicon on the frontside of the sensor. The photodiode region receives light from the back surface of the semiconductor substrate. When a portion of the received light propagates through the photodiode region to the light reflecting layer, the light reflecting layer reflects the portion of light received from the photodiode region towards the photodiode region. The silicided polysilicon light reflecting layer also forms a gate of a transistor for establishing a conductive channel between the photodiode region and a floating drain.
    Type: Application
    Filed: August 27, 2008
    Publication date: August 13, 2009
    Applicant: Omnivision Technologies, Inc.
    Inventors: Sohei Manabe, Hsin-Chih Tai, Vincent Venezia, Duli Mao, Yin Qian
  • Publication number: 20090201395
    Abstract: A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that includes a photodiode region, an insulator, and a silicide reflective layer. The photodiode region is formed in the frontside of the semiconductor substrate. The insulation layer is formed on the backside of the semiconductor substrate. The transparent electrode formed on the backside of the insulation layer. The transparent electrode allows light to be transmitted through a back surface of the semiconductor substrate such that when the transparent electrode is biased, carriers are formed in a region in the backside of the semiconductor substrate to reduce leakage current. ARC layers can be used to increase sensitivity of the sensor to selected wavelengths of light.
    Type: Application
    Filed: September 5, 2008
    Publication date: August 13, 2009
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Sohei Manabe, Satyadev Nagaraia
  • Publication number: 20090200624
    Abstract: A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging sensor pixel. The pixel circuitry includes transistor pixel circuitry disposed within the semiconductor die between a frontside of the semiconductor die and the photodiode region. At least a portion of the pixel circuitry overlaps the photodiode region.
    Type: Application
    Filed: March 21, 2008
    Publication date: August 13, 2009
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Tiejun Dai, Hsin-Chih Tai, Sohei Manabe, Hidetoshi Nozaki, Howard E. Rhodes
  • Publication number: 20090200590
    Abstract: An array of pixels is formed using a substrate, where each pixel has a substrate having a backside and a frontside that includes metalization layers, a photodiode formed in the substrate, frontside P-wells formed using frontside processing that are adjacent to the photosensitive region, and an N-type region formed in the substrate below the photodiode. The N-type region is formed in a region of the substrate below the photodiode and is formed at least in part in a region of the substrate that is deeper than the depth of the frontside P-wells.
    Type: Application
    Filed: October 27, 2008
    Publication date: August 13, 2009
    Applicant: Omnivision Technologies Inc.
    Inventors: Duli Mao, Sohei Manabe, Vincent Venezia, Hsin-Chih Tai, Hidetoshi Nozaki, Yin Qian, Howard E. Rhodes
  • Publication number: 20090200580
    Abstract: What is disclosed is an apparatus comprising a transfer gate formed on a substrate and a photodiode formed in the substrate next to the transfer gate. The photodiode comprises a shallow N-type collector formed in the substrate, a deep N-type collector formed in the substrate, wherein a lateral side of the deep N-type collector extends at least under the transfer gate, and a connecting N-type collector formed in the substrate between the deep N-type collector and the shallow N-type collector, wherein the connecting implant connects the deep N-type collector and the shallow N-type collector. Also disclosed is a process comprising forming a deep N-type collector in the substrate, forming a shallow N-type collector formed in the substrate, and forming a connecting N-type collector in the substrate between the deep N-type collector and the shallow N-type collector, wherein the connecting implant connects the deep N-type collector and the shallow N-type collector.
    Type: Application
    Filed: February 8, 2008
    Publication date: August 13, 2009
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Howard E. Rhodes, Hidetoshi Nozaki, Sohei Manabe
  • Publication number: 20090200625
    Abstract: An array of pixels is formed using a substrate having a frontside and a backside that is for receiving incident light. Each pixel typically includes metallization layers included in the frontside of the substrate, a photosensitive region formed in the backside of the substrate, and a trench formed around the photosensitive region in the backside of the substrate. The trench causes the incident light to be directed away from the trench and towards the photosensitive region.
    Type: Application
    Filed: September 4, 2008
    Publication date: August 13, 2009
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Vincent Venezia, Hsin-Chih Tai, Duli Mao, Sohei Manabe, Howard E. Rhodes, Wei Dong Qian
  • Publication number: 20090128660
    Abstract: An apparatus for measuring the power frequency of a light source includes a photo-sensitive transistor, a modulators and a logic unit. The photo-sensitive transistor generates an electrical signal that is responsive to light incident thereon from the light source. The modulator generates a modulated signal based on the electrical signal that toggles at a rate substantially proportional to the power frequency of the light source. The logic unit is coupled to receive the modulated signal and determine its toggling frequency.
    Type: Application
    Filed: November 19, 2007
    Publication date: May 21, 2009
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Tiejun Dai, Sohei Manabe, Hongtao Yao, Jingzhou Zhang, Liping Deng
  • Publication number: 20090002528
    Abstract: An image sensor has at least two photodiodes in each unit pixel. A high dynamic range is achieved by selecting different exposure times for the photodiodes. Additionally, blooming is reduced. The readout timing cycle is chosen so that the short exposure time photodiodes act as drains for excess charge overflowing from the long exposure time photodiodes. To improve draining of excess charge, the arrangement of photodiodes may be further selected so that long exposure time photodiodes are neighbored along vertical and horizontal directions by short exposure time photodiodes. A micro-lens array may also be provided in which light is preferentially coupled to the long exposure time photodiodes to improve sensitivity.
    Type: Application
    Filed: October 15, 2007
    Publication date: January 1, 2009
    Inventors: Sohei Manabe, Ashish Shah, Sasidhar Saladi, William Qian, Hidetoshi Nozaki, Nagaraja Satyadev, Hsin-Chih Dyson Tai, Howard M. Rhodes