Patents by Inventor Song Man Xu

Song Man Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Three-dimensional memory devices and fabricating methods thereof
    Patent number: 10734397
    Abstract: A method for forming a 3D memory device is disclosed. The method includes: forming an first insulating layer on a substrate in a peripheral region, the first insulating layer having a slope near a boundary between the peripheral region and a core region of the substrate; forming an alternating conductive/dielectric stack on the substrate and the slope of the first insulating layer, a lateral portion of the alternating conductive/dielectric stack extending along a top surface of the substrate in the core region, and an inclined portion of the alternating conductive/dielectric stack extending along the slope of the first insulating layer; and forming a plurality of contacts to electrically contact a plurality of conductive layers in the inclined portion of the alternating conductive/dielectric stack.
    Type: Grant
    Filed: September 10, 2018
    Date of Patent: August 4, 2020
    Assignee: Yangtze Memory Technologies Co., Ltd.
    Inventors: Cheng Zhou, Bin Yuan, QingBo Liu, Song Man Xu, Siying Liu, Rui Gong, Zhiguo Zhao, Zhaoyun Tang, Zhiliang Xia, Zongliang Huo
  • THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
    Publication number: 20190081055
    Abstract: A method for forming a 3D memory device is disclosed. The method includes: forming an first insulating layer on a substrate in a peripheral region, the first insulating layer having a slope near a boundary between the peripheral region and a core region of the substrate; forming an alternating conductive/dielectric stack on the substrate and the slope of the first insulating layer, a lateral portion of the alternating conductive/dielectric stack extending along a top surface of the substrate in the core region, and an inclined portion of the alternating conductive/dielectric stack extending along the slope of the first insulating layer; and forming a plurality of contacts to electrically contact a plurality of conductive layers in the inclined portion of the alternating conductive/dielectric stack.
    Type: Application
    Filed: September 10, 2018
    Publication date: March 14, 2019
    Applicant: Yangtze Memory Technologies Co., Ltd.
    Inventors: Cheng ZHOU, Bin Yuan, QingBo Liu, Song Man Xu, Siying Liu, Rui Gong, Zhiguo Zhao, Zhaoyun Tang, Zhiliang Xia, Zongliang Huo