Patents by Inventor Soon Kang Huang

Soon Kang Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10357867
    Abstract: A polishing system includes a wafer support that holds a wafer, the wafer having a first diameter. The polishing system further includes a first polishing pad that polishes a first region of the wafer, the first polishing pad having a second diameter greater than the first diameter. The polishing system further includes an auxiliary polishing system comprising at least one second polishing pad that polishes a second region of the wafer, wherein the second polishing pad has a third diameter less than the first diameter, and the wafer support is configured to support the wafer during use of the first polishing pad and the auxiliary polishing system.
    Type: Grant
    Filed: July 18, 2017
    Date of Patent: July 23, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Chi Lin, Kun-Tai Wu, You-Hua Chou, Chih-Tsung Lee, Min Hao Hong, Chih-Jen Wu, Chen-Ming Huang, Soon-Kang Huang, Chin-Hsiang Chang, Chih-Yuan Yang
  • Patent number: 10096482
    Abstract: An apparatus and method for providing target thickness and surface profile uniformity control of a multi-head chemical mechanical polishing (CMP) process is disclosed. An exemplary method includes providing at least two wafers; determining a surface profile of each of the at least two wafers; determining an operation mode for a chemical mechanical polishing (CMP) process based on the surface profiles of the at least two wafers; determining a CMP polishing recipe for each of the at least two wafers based on the operation mode; and performing the CMP process on the at least two wafers based on the determined CMP polishing recipes.
    Type: Grant
    Filed: August 10, 2015
    Date of Patent: October 9, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Keung Hui, Jin-Ning Sung, Jong-I Mou, Soon-Kang Huang, Yen-Di Tsen
  • Patent number: 10090207
    Abstract: A wafer polishing system including a platen configured to rotate in a first direction, and a polishing head configured to hold a wafer, the polishing head configured to rotate in a second direction. The wafer polishing system further includes an optical sensing system configured to detect a thickness of the wafer at a first location on the platen and a second location on the platen. A first distance from a center of the platen to the first location is different than a second distance from the center of the platen to the second location.
    Type: Grant
    Filed: November 28, 2012
    Date of Patent: October 2, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jiann Lih Wu, Jeng-Jyi Hwang, Soon-Kang Huang, Chi-Ming Yang
  • Publication number: 20170312881
    Abstract: A polishing system includes a wafer support that holds a wafer, the wafer having a first diameter. The polishing system further includes a first polishing pad that polishes a first region of the wafer, the first polishing pad having a second diameter greater than the first diameter. The polishing system further includes an auxiliary polishing system comprising at least one second polishing pad that polishes a second region of the wafer, wherein the second polishing pad has a third diameter less than the first diameter, and the wafer support is configured to support the wafer during use of the first polishing pad and the auxiliary polishing system.
    Type: Application
    Filed: July 18, 2017
    Publication date: November 2, 2017
    Inventors: Shih-Chi LIN, Kun-Tai WU, You-Hua CHOU, Chih-Tsung LEE, Min Hao HONG, Chih-Jen WU, Chen-Ming HUANG, Soon-Kang HUANG, Chin-Hsiang CHANG, Chih-Yuan YANG
  • Patent number: 9718164
    Abstract: A polishing system for polishing a semiconductor wafer includes a wafer support for holding the semiconductor wafer, and a first polishing pad for polishing a region of the semiconductor wafer. The semiconductor wafer has a first diameter, and the first polishing pad has a second diameter shorter than the first diameter.
    Type: Grant
    Filed: December 6, 2012
    Date of Patent: August 1, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Chi Lin, Kun-Tai Wu, You-Hua Chou, Chih-Tsung Lee, Min Hao Hong, Chih-Jen Wu, Chen-Ming Huang, Soon-Kang Huang, Chin-Hsiang Chang, Chih-Yuan Yang
  • Patent number: 9368452
    Abstract: The present disclosure provides a method of fabricating a semiconductor device, a semiconductor device fabricated by such a method, and a chemical mechanical polishing (CMP) tool for performing such a method. In one embodiment, a method of fabricating a semiconductor device includes providing an integrated circuit (IC) wafer including a metal conductor in a trench of a dielectric layer over a substrate, and performing a chemical mechanical polishing (CMP) process to planarize the metal conductor and the dielectric layer. The method further includes cleaning the planarized metal conductor and dielectric layer to remove residue from the CMP process, rinsing the cleaned metal conductor and dielectric layer with an alcohol, and drying the rinsed metal conductor and dielectric layer in an inert gas environment.
    Type: Grant
    Filed: February 18, 2014
    Date of Patent: June 14, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Soon-Kang Huang, Han-Hsin Kuo, Chi-Ming Yang, Shwang-Ming Jeng, Chin-Hsiang Lin
  • Publication number: 20160136776
    Abstract: A method of planarizing a wafer includes pressing the wafer against a planarization pad. The method further includes moving the planarization pad relative to the wafer. The method further includes conditioning the planarization pad using a pad conditioner. Conditioning the planarization pad includes moving the planarization pad relative to the pad conditioner. The pad conditioner includes abrasive particles having aligned tips a substantially constant distance from a surface of substrate of the pad conditioner.
    Type: Application
    Filed: January 21, 2016
    Publication date: May 19, 2016
    Inventors: Bo-I LEE, Soon Kang HUANG, Chi-Ming YANG, Chin-Hsiang LIN
  • Publication number: 20150348797
    Abstract: An apparatus and method for providing target thickness and surface profile uniformity control of a multi-head chemical mechanical polishing (CMP) process is disclosed. An exemplary method includes providing at least two wafers; determining a surface profile of each of the at least two wafers; determining an operation mode for a chemical mechanical polishing (CMP) process based on the surface profiles of the at least two wafers; determining a CMP polishing recipe for each of the at least two wafers based on the operation mode; and performing the CMP process on the at least two wafers based on the determined CMP polishing recipes.
    Type: Application
    Filed: August 10, 2015
    Publication date: December 3, 2015
    Inventors: Keung Hui, Jin-Ning Sung, Jong-I Mou, Soon-Kang Huang, Yen-Di Tsen
  • Publication number: 20140220863
    Abstract: A chemical-mechanical polishing system has a first polishing apparatus configured to perform a first chemical-mechanical polish on a workpiece and a second polishing apparatus configured to perform a second chemical-mechanical polish on the workpiece. A rework polishing apparatus comprising a rework platen and a rework CMP head is configured to perform an auxiliary chemical-mechanical polish on the workpiece when the workpiece is positioned on the rework platen. A measurement apparatus measures one or more parameters of the workpiece, and a transport apparatus transports the workpiece between the first polishing apparatus, second polishing apparatus, rework polishing apparatus, and measurement apparatus. A controller determines a selective transport of the workpiece to the rework polishing apparatus by the transport apparatus only when the one or more parameters are unsatisfactory.
    Type: Application
    Filed: February 4, 2013
    Publication date: August 7, 2014
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jiann Lih Wu, Jason Shen, Soon-Kang Huang, James Jeng-Jyi Hwang, Chi-Ming Yang
  • Publication number: 20140196744
    Abstract: A method for cleaning a brush surface having a contamination is provided. The method includes steps of: providing a mechanical wave; and stripping off the contamination from the brush surface by the mechanical wave.
    Type: Application
    Filed: January 11, 2013
    Publication date: July 17, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jiann-Lih WU, Jeng-Jyi HWANG, Soon-Kang HUANG, Chi-Ming YANG
  • Publication number: 20140159243
    Abstract: The present disclosure provides a method of fabricating a semiconductor device, a semiconductor device fabricated by such a method, and a chemical mechanical polishing (CMP) tool for performing such a method. In one embodiment, a method of fabricating a semiconductor device includes providing an integrated circuit (IC) wafer including a metal conductor in a trench of a dielectric layer over a substrate, and performing a chemical mechanical polishing (CMP) process to planarize the metal conductor and the dielectric layer. The method further includes cleaning the planarized metal conductor and dielectric layer to remove residue from the CMP process, rinsing the cleaned metal conductor and dielectric layer with an alcohol, and drying the rinsed metal conductor and dielectric layer in an inert gas environment.
    Type: Application
    Filed: February 18, 2014
    Publication date: June 12, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Soon-Kang Huang, Han-Hsin Kuo, Chi-Ming Yang, Shwang-Ming Jeng, Chin-Hsiang Lin
  • Publication number: 20140162534
    Abstract: A polishing system for polishing a semiconductor wafer includes a wafer support for holding the semiconductor wafer, and a first polishing pad for polishing a region of the semiconductor wafer. The semiconductor wafer has a first diameter, and the first polishing pad has a second diameter shorter than the first diameter.
    Type: Application
    Filed: December 6, 2012
    Publication date: June 12, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Chi LIN, Kun-Tai WU, You-Hua CHOU, Chih-Tsung LEE, Min Hao HONG, Chih-Jen WU, Chen-Ming HUANG, Soon-Kang HUANG, Chin-Hsiang CHANG, Chih-Yuan YANG
  • Publication number: 20130217306
    Abstract: Some embodiments relate to a chemical mechanical polishing (CMP) system. The CMP system includes a polishing pad having a polishing surface, and a wafer carrier to retain a wafer proximate to the polishing surface during polishing. A motor assembly rotates the polishing pad and concurrently rotates the wafer during polishing of the wafer. A conditioning disk has a conditioning surface that is in frictional engagement with the polishing surface during polishing. A torque measurement element measures a torque exerted by the motor assembly during polishing. A condition surface analyzer determines a surface condition of the conditioning surface or the polishing surface based on the measured torque. Other systems and methods are also disclosed.
    Type: Application
    Filed: February 16, 2012
    Publication date: August 22, 2013
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jiann Lih Wu, Bo-I Lee, Soon Kang Huang, Chi-Ming Yang, Chin-Hsiang Lin
  • Publication number: 20130210323
    Abstract: The present disclosure relates to a two-phase cleaning element that enhances polishing pad cleaning so as to prevent wafer scratches and contamination in chemical mechanical polishing (CMP) processes. In some embodiments, the two-phase pad cleaning element comprises a first cleaning element and a second cleaning element configured to successively operate upon a section of a CMP polishing pad. The first cleaning element comprises a megasonic cleaning jet configured to utilize cavitation energy to dislodge particles embedded in the CMP polishing pad without damaging the surface of the polishing pad. The second cleaning element is configured to apply a high pressure mist, comprising two fluids, to remove by-products from the CMP polishing pad. By using megasonic cleaning to dislodge embedded particles a two-fluid mist to flush away by-products (e.g., including the dislodged embedded particles), the two-phase pad cleaning element enhances polishing pad cleaning.
    Type: Application
    Filed: February 15, 2012
    Publication date: August 15, 2013
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jiann Lih Wu, Bo-I Lee, Soon Kang Huang, Chi-Ming Yang, Chin-Hsiang Lin
  • Publication number: 20130210173
    Abstract: To provide improved planarization, techniques in accordance with this disclosure include a CMP station that includes a plurality of concentric temperature control elements arranged over a number of concentric to-be-polished wafer surfaces. During polishing, a wafer surface planarity sensor monitors relative heights of the concentric to-be-polished wafer surfaces, and adjusts the temperatures of the concentric temperature control elements to provide an extremely well planarized wafer surface. Other systems and methods are also disclosed.
    Type: Application
    Filed: February 14, 2012
    Publication date: August 15, 2013
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jiann Lih Wu, Bo-I Lee, Soon Kang Huang, Chih-I Peng, Chi-Ming Yang, Chin-Hsiang Lin
  • Patent number: 8188447
    Abstract: A method includes dividing a semiconductor wafer into a plurality of dies areas, generating a map of the semiconductor wafer, scanning each of the plurality of die areas of the semiconductor wafer with a laser, and adjusting a parameter of the laser during the scanning based on a value of the die areas identified by the map of the semiconductor wafer. The map characterizing the die areas based on a first measurement of each individual die area.
    Type: Grant
    Filed: January 26, 2009
    Date of Patent: May 29, 2012
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chung-Ru Yang, Chyi Shyuan Chern, Soon Kang Huang
  • Patent number: 7957118
    Abstract: A method for processing a semiconductor wafer comprises measuring data indicating an amount of warpage of the wafer. At least two different voltages are determined, based on the amount of warpage. The voltages are to be applied to respective portions of the wafer by an electrostatic chuck that is to hold the wafer. The at least two different voltages are applied to hold the respective portions of the wafer while performing a fabrication process on the wafer.
    Type: Grant
    Filed: April 30, 2009
    Date of Patent: June 7, 2011
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Pin Chang, Tung Long Lai, Soon Kang Huang
  • Patent number: 7950983
    Abstract: A retainer ring and a method of using the retainer ring are provided. The retainer ring has openings along a bottom surface. Grooves encompass the openings and extend to an interior portion of the retainer ring wherein a semiconductor wafer may be held. In operation, a semiconductor wafer is placed inside the retainer ring. As the retainer ring and the semiconductor wafer are moved relative to an underlying polishing pad, slurry is dispensed through the openings in the retainer ring. The grooves in the retainer ring allow the slurry to flow from the openings to the interior portion of the retainer ring and the semiconductor wafer.
    Type: Grant
    Filed: January 6, 2010
    Date of Patent: May 31, 2011
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Soon Kang Huang, Chih-Lung Lin, Chyi-Shyuan Chern
  • Publication number: 20100291840
    Abstract: A chemical mechanical polishing (CMP) apparatus provides for polishing semiconductor wafers and for conditioning the polishing pad of the CMP apparatus using multiple conditioning disks at the same time. The conditioning disks may be moved together or independently along the surface of polishing pad to condition the entire surface of the rotating polishing pad.
    Type: Application
    Filed: May 12, 2009
    Publication date: November 18, 2010
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Soon Kang HUANG, Kun-Ku HUNG, Zin-Chang WEI, Chyi Shyuan CHERN
  • Publication number: 20100277850
    Abstract: A method for processing a semiconductor wafer comprises measuring data indicating an amount of warpage of the wafer. At least two different voltages are determined, based on the amount of warpage. The voltages are to be applied to respective portions of the wafer by an electrostatic chuck that is to hold the wafer. The at least two different voltages are applied to hold the respective portions of the wafer while performing a fabrication process on the wafer.
    Type: Application
    Filed: April 30, 2009
    Publication date: November 4, 2010
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Pin Chang, Tung Long Lai, Soon Kang Huang