Patents by Inventor Soonam Park

Soonam Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190272999
    Abstract: Exemplary magnetic induction plasma systems for generating plasma products are provided. The magnetic induction plasma system may include a first plasma source including a plurality of first sections and a plurality of second sections arranged in an alternating manner and fluidly coupled with each other such that at least a portion of plasma products generated inside the first plasma source may circulate through at least one of the plurality of first sections and at least one of the plurality of second sections inside the first plasma source. Each of the plurality of second sections may include a dielectric material. The system may further include a plurality of first magnetic elements each of which may define a closed loop. Each of the plurality of second sections may define a plurality of recesses for receiving one of the plurality of first magnetic elements therein.
    Type: Application
    Filed: March 1, 2018
    Publication date: September 5, 2019
    Applicant: Applied Materials, Inc.
    Inventors: Tae Seung Cho, Soonwook Jung, Junghoon Kim, Satoru Kobayashi, Kenneth D. Schatz, Soonam Park, Dmitry Lubomirsky
  • Publication number: 20190259580
    Abstract: Methods and systems for etching substrates using a remote plasma are described. Remotely excited etchants are formed in a remote plasma and flowed through a showerhead into a substrate processing region to etch the substrate. Optical emission spectra are acquired from the substrate processing region just above the substrate. The optical emission spectra may be used to determine an endpoint of the etch, determine the etch rate or otherwise characterize the etch process. A weak plasma may be present in the substrate processing region. The weak plasma may have much lower intensity than the remote plasma. In cases where no bias plasma is used above the substrate in an etch process, a weak plasma may be ignited near a viewport disposed near the side of the substrate processing region to characterize the etchants.
    Type: Application
    Filed: May 1, 2019
    Publication date: August 22, 2019
    Applicant: Applied Materials, Inc.
    Inventors: Tae Seung Cho, Soonam Park, Junghoon Kim, Dmitry Lubomirsky, Shankar Venkataraman
  • Patent number: 10354843
    Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.
    Type: Grant
    Filed: April 28, 2017
    Date of Patent: July 16, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Qiwei Liang, Xinglong Chen, Kien Chuc, Dmitry Lubomirsky, Soonam Park, Jang-Gyoo Yang, Shankar Venkataraman, Toan Tran, Kimberly Hinckley, Saurabh Garg
  • Patent number: 10340124
    Abstract: A rotating microwave is established for any resonant mode TEmnl or TMmnl of a cavity, where the user is free to choose the values of the mode indices m, n and l. The fast rotation, the rotation frequency of which is equal to an operational microwave frequency, is accomplished by setting the temporal phase difference ?Ø and the azimuthal angle ?? between two microwave input ports P and Q as functions of m, n and l. The slow rotation of frequency ?? (typically 1-1000 Hz), is established by transforming dual field inputs ? cos ??t and ±? sin ??t in the orthogonal input system into an oblique system defined by the angle ?? between two microwave ports P and Q.
    Type: Grant
    Filed: June 13, 2016
    Date of Patent: July 2, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Satoru Kobayashi, Hideo Sugai, Toan Tran, Soonam Park, Dmitry Lubomirsky
  • Publication number: 20190189399
    Abstract: Plasma is generated in a semiconductor process chamber by a plurality of microwave inputs with slow or fast rotation. Radial uniformity of the plasma is controlled by regulating the power ratio of a center-high mode and an edge-high mode of the plurality of microwave inputs into a microwave cavity. The radial uniformity of the generated plasma in a plasma chamber is attained by adjusting the power ratio for the two modes without inputting time-splitting parameters for each mode.
    Type: Application
    Filed: December 13, 2018
    Publication date: June 20, 2019
    Inventors: SATORU KOBAYASHI, LANCE SCUDDER, DAVID BRITZ, SOONAM PARK, DMITRY LUBOMIRSKY, HIDEO SUGAI
  • Patent number: 10319649
    Abstract: Methods and systems for etching substrates using a remote plasma are described. Remotely excited etchants are formed in a remote plasma and flowed through a showerhead into a substrate processing region to etch the substrate. Optical emission spectra are acquired from the substrate processing region just above the substrate. The optical emission spectra may be used to determine an endpoint of the etch, determine the etch rate or otherwise characterize the etch process. A weak plasma may be present in the substrate processing region. The weak plasma may have much lower intensity than the remote plasma. In cases where no bias plasma is used above the substrate in an etch process, a weak plasma may be ignited near a viewport disposed near the side of the substrate processing region to characterize the etchants.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: June 11, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Tae Seung Cho, Soonam Park, Junghoon Kim, Dmitry Lubomirsky, Shankar Venkataraman
  • Publication number: 20190119815
    Abstract: Systems and methods may be used to enact plasma filtering. Exemplary processing chambers may include a showerhead. The processing chambers may include a substrate support. The processing chambers may include a power source electrically coupled with the substrate support and configured to provide power to the substrate support to produce a bias plasma within a processing region defined between the showerhead and the substrate support. The processing systems may include a plasma screen coupled with the substrate support and configured to substantially eliminate plasma leakage through the plasma screen. The plasma screen may be coupled with electrical ground.
    Type: Application
    Filed: October 22, 2018
    Publication date: April 25, 2019
    Applicant: Applied Materials, Inc.
    Inventors: Soonam Park, Toan Q. Tran, Nikolai Kalnin, Dmitry Lubomirsky, Akhil Devarakonda
  • Publication number: 20190108981
    Abstract: A plasma reactor for processing a workpiece has a microwave source with a digitally synthesized rotation frequency using direct digital up-conversion and a user interface for controlling the rotation frequency.
    Type: Application
    Filed: December 7, 2018
    Publication date: April 11, 2019
    Inventors: Satoru Kobayashi, Hideo Sugai, Soonam Park, Kartik Ramaswamy, Dmitry Lubomirsky
  • Publication number: 20190019734
    Abstract: Embodiments may include a method of etching. The method may also include flowing a gas mixture through a plasma discharge to form plasma effluents. The method may further include flowing the plasma effluents through a plurality of apertures to a layer on a substrate. The layer may have a first thickness. In addition, the method may include etching the layer with the plasma effluents. The method may also include measuring the intensity of emission from a reaction of plasma effluents with the layer. The method may further include summing the intensity of the emission while the plasma effluents are being flowed to the layer to obtain an integrated intensity. The method may then include comparing the integrated intensity to a reference value corresponding to a target etch thickness. The method may include extinguishing the plasma discharge when the integrated intensity is equal to or greater than the reference value.
    Type: Application
    Filed: July 11, 2017
    Publication date: January 17, 2019
    Applicant: Applied Materials, Inc.
    Inventors: Soonwook Jung, Soonam Park, Dmitry Lubomirsky
  • Publication number: 20180366300
    Abstract: Methods of matching process performance across tools are described. In embodiments, the methods include measuring the DC component of voltage across a plasma configured to process a semiconductor substrate. The RF plasma power is adjusted in response to the measurement of the DC component in a feedback loop to achieve a desired DC voltage. The DC voltage is correlated herein with process characteristics. Feeding back the DC voltage to adjust the RF plasma power has been found to achieve similar process characteristics (e.g. etch rates) despite artificially-introduced variations in plasma hardware which simulated worst-case manufacturing variations. More intuitive feedback options, such as AC voltage amplitude were found to correlate poorly with plasma process characteristics.
    Type: Application
    Filed: June 16, 2017
    Publication date: December 20, 2018
    Applicant: Applied Materials, Inc.
    Inventors: Soonwook Jung, Soonam Park, Dmitry Lubomirsky
  • Publication number: 20180366378
    Abstract: Methods of monitoring a plasma while processing a semiconductor substrate are described. In embodiments, the methods include determining the difference in power between the power delivered from the plasma power supply and the power received by the plasma in a substrate processing chamber. The power received may be determined using a V/I sensor positioned after the matching circuit. The power reflected or the power lost is the difference between the delivered power and the received power. The process may be terminated by removing the delivered power if the reflected power is above a setpoint. The VRF may further be fourier transformed into frequency space and compared to the stored fourier transform of a healthy plasma process. Missing frequencies from the VRF fourier transform may independently or further indicate an out-of-tune plasma process and the process may be terminated.
    Type: Application
    Filed: June 16, 2017
    Publication date: December 20, 2018
    Applicant: Applied Materials, Inc.
    Inventors: Junghoon Kim, Soonam Park, Tae Seung Cho, Dmitry Lubomirsky, Nikolai Kalnin
  • Patent number: 10153133
    Abstract: A plasma reactor for processing a workpiece has a microwave source with a digitally synthesized rotation frequency using direct digital up-conversion and a user interface for controlling the rotation frequency.
    Type: Grant
    Filed: December 18, 2015
    Date of Patent: December 11, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Satoru Kobayashi, Hideo Sugai, Soonam Park, Kartik Ramaswamy, Dmitry Lubomirsky
  • Publication number: 20180337074
    Abstract: Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.
    Type: Application
    Filed: May 17, 2017
    Publication date: November 22, 2018
    Applicant: Applied Materials, Inc.
    Inventors: Mehmet Tugrul Samir, Dongqing Yang, Dmitry Lubomirsky, Peter Hillman, Soonam Park, Martin Yue Choy, Lala Zhu
  • Publication number: 20180337057
    Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.
    Type: Application
    Filed: May 17, 2017
    Publication date: November 22, 2018
    Applicant: Applied Materials, Inc.
    Inventors: Mehmet Tugrul Samir, Dongqing Yang, Dmitry Lubomirsky, Peter Hillman, Soonam Park, Martin Yue Choy, Lala Zhu
  • Publication number: 20180337024
    Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define an opening to a central channel at the first end, and the central channel may be characterized by a first cross-sectional surface area. The adapter may define an exit from a second channel at the second end, and the adapter may define a transition between the central channel and the second channel within the adapter between the first end and the second end. The adapter may define a third channel between the transition and the second end of the adapter, and the third channel may be fluidly isolated from the central channel and the second channel.
    Type: Application
    Filed: May 16, 2018
    Publication date: November 22, 2018
    Applicant: Applied Materials, Inc.
    Inventors: Tien Fak Tan, Dmitry Lubomirsky, Soonwook Jung, Soonam Park, Raymond W. Lu, Phong Pham, Edwin C. Suarez
  • Publication number: 20180294198
    Abstract: Methods and systems for etching substrates using a remote plasma are described. Remotely excited etchants are formed in a remote plasma and flowed through a showerhead into a substrate processing region to etch the substrate. Optical emission spectra are acquired from the substrate processing region just above the substrate. The optical emission spectra may be used to determine an endpoint of the etch, determine the etch rate or otherwise characterize the etch process. A weak plasma may be present in the substrate processing region. The weak plasma may have much lower intensity than the remote plasma. In cases where no bias plasma is used above the substrate in an etch process, a weak plasma may be ignited near a viewport disposed near the side of the substrate processing region to characterize the etchants.
    Type: Application
    Filed: April 11, 2017
    Publication date: October 11, 2018
    Applicant: Applied Materials, Inc.
    Inventors: Tae Seung Cho, Soonam Park, Junghoon Kim, Dmitry Lubomirsky, Shankar Venkataraman
  • Publication number: 20180240654
    Abstract: In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.
    Type: Application
    Filed: April 19, 2018
    Publication date: August 23, 2018
    Applicant: Applied Materials, Inc.
    Inventors: Soonam Park, Yufei Zhu, Edwin C. Suarez, Nitin K. Ingle, Dmitry Lubomirsky, Jiayin Huang
  • Publication number: 20180226230
    Abstract: A system includes a process chamber, a housing that defines a waveguide cavity, and a first conductive plate within the housing. The first conductive plate faces the process chamber. The system also includes one or more adjustment devices that can adjust at least a position of the first conductive plate, and a second conductive plate, coupled with the housing, between the waveguide cavity and the process chamber. Electromagnetic radiation can propagate from the waveguide cavity into the process chamber through apertures in the second conductive plate. The system also includes a dielectric plate that seals off the process chamber from the waveguide cavity, and one or more electronics sets that transmit the electromagnetic radiation into the waveguide cavity. A plasma forms when at least one process gas is within the chamber, and the electromagnetic radiation propagates into the process chamber from the waveguide cavity.
    Type: Application
    Filed: February 3, 2017
    Publication date: August 9, 2018
    Applicant: Applied Materials, Inc.
    Inventors: Satoru Kobayashi, Hideo Sugai, Nikolai Kalnin, Soonam Park, Toan Tran, Dmitry Lubomirsky
  • Patent number: 10032606
    Abstract: Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber.
    Type: Grant
    Filed: June 20, 2016
    Date of Patent: July 24, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Jang-Gyoo Yang, Xinglong Chen, Soonam Park, Jonghoon Baek, Saurabh Garg, Shankar Venkataraman
  • Patent number: 9978564
    Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: May 22, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Qiwei Liang, Xinglong Chen, Kien Chuc, Dmitry Lubomirsky, Soonam Park, Jang-Gyoo Yang, Shankar Venkataraman, Toan Tran, Kimberly Hinckley, Saurabh Garg