Abstract: A secondary battery includes an electrode assembly having a positive electrode provided with a positive electrode tab, a separator, and a negative electrode provided with a negative electrode tab, the positive electrode, the separator, and the negative electrode being wound, the electrode assembly having a core part at a center thereof; a can configured to receive the electrode assembly therein, the negative electrode tab being connected to the can; a cap assembly coupled to an opening of the can, the positive electrode tab being connected to the cap assembly; and a reinforcing member provided on an end of the separator exposed beyond the positive electrode or the negative electrode to prevent heat of the positive electrode tab or the negative electrode tab from being transferred to the separator.

Abstract: There is provided a semiconductor device having improved performance and reliability. A semiconductor device comprises an active pattern extending in a first direction, a gate structure including a gate electrode, a gate spacer, and a gate capping pattern on the active pattern, the gate electrode extending in a second direction different from the first direction and the gate capping pattern including a lower gate capping pattern and an upper gate capping pattern; a source/drain pattern disposed on the active pattern; and a source/drain etch stop film disposed on an upper surface of the source/drain pattern and extending along a sidewall of the gate spacer. The lower gate capping pattern is disposed on an upper surface of the gate electrode and an upper surface of the gate spacer, and the source/drain etch stop film does not extend along a sidewall of the lower gate capping pattern.

Abstract: A semiconductor device includes an active pattern which includes a lower pattern extending in a first direction, and sheet patterns spaced apart from the lower pattern in a second direction perpendicular to an upper surface of the lower pattern, each sheet pattern including an upper surface and a lower surface, a gate structure disposed on the lower pattern and including a gate electrode and a gate insulating film, the gate electrode and the gate insulating film surrounding each sheet pattern, and a source/drain pattern disposed on at least one side of the gate structure. The gate structure includes inter-gate structures that are disposed between the lower pattern and a lowermost sheet pattern and between two sheet patterns, and contacts the source/drain pattern. The gate insulating film includes a horizontal portion with a first thickness, and a first vertical portion with a second thickness different from the first thickness.

Abstract: A semiconductor device includes a plurality of lower electrodes having a vertical length greater than a horizontal width on a substrate, a supporter disposed between the lower electrodes, an upper electrode disposed on the lower electrodes, and a capacitor dielectric layer disposed between the lower electrodes and the upper electrode. The supporter includes a first element, a second element, and oxygen, an oxide of the second element has a higher band gap energy than an oxide of the first element, and the content of the second element in the supporter is from about 10 at % to 90 at %.

Abstract: A semiconductor device includes a plurality of lower electrodes having a vertical length greater than a horizontal width on a substrate, a supporter disposed between the lower electrodes, an upper electrode disposed on the lower electrodes, and a capacitor dielectric layer disposed between the lower electrodes and the upper electrode. The supporter includes a first element, a second element, and oxygen, an oxide of the second element has a higher band gap energy than an oxide of the first element, and the content of the second element in the supporter is from about 10 at % to 90 at %.

Abstract: A semiconductor device includes a plurality of lower electrodes having a vertical length greater than a horizontal width on a substrate, a supporter disposed between the lower electrodes, an upper electrode disposed on the lower electrodes, and a capacitor dielectric layer disposed between the lower electrodes and the upper electrode. The supporter includes a first element, a second element, and oxygen, an oxide of the second element has a higher band gap energy than an oxide of the first element, and the content of the second element in the supporter is from about 10 at % to 90 at %.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device are provided. In a method of manufacturing a semiconductor device, a gate structure is formed on a substrate. An epitaxial layer is formed on a top surface of the substrate adjacent to the gate structure. An elevated source/drain (ESD) layer and an impurity region are formed by implanting impurities and carbon in the epitaxial layer and an upper portion of the substrate using the gate structure as an ion implantation mask. A metal silicide layer is formed on the ESD layer.

Abstract: A semiconductor device includes a plurality of electrode structures perpendicularly extending on a substrate, and at least one support unit extending between the plurality of electrode structures. The support unit includes at least one support layer including a noncrystalline metal oxide contacting a part of the plurality of electrode structures. Related devices and fabrication methods are also discussed.

Abstract: A semiconductor device includes a plurality of lower electrodes having a vertical length greater than a horizontal width on a substrate, a supporter disposed between the lower electrodes, an upper electrode disposed on the lower electrodes, and a capacitor dielectric layer disposed between the lower electrodes and the upper electrode. The supporter includes a first element, a second element, and oxygen, an oxide of the second element has a higher band gap energy than an oxide of the first element, and the content of the second element in the supporter is from about 10 at % to 90 at %.

Abstract: A method of manufacturing a semiconductor device includes forming a gate structure on a substrate; forming a sacrificial spacer may be formed on a sidewall of the gate substrate; implanting first impurities into portions of the substrate by a first ion implantation process using the gate structure and the sacrificial spacer as ion implantation masks to form source and drain regions; removing the sacrificial spacer; and implanting second impurities and carbon atoms into portions of the substrate by a second ion implantation process using the gate structure as an ion implantation mask to form source and drain extension regions and carbon doping regions, respectively.

Abstract: Disclosed herein are a nanowire and a current-induced domain wall displacement-type memory device using the same.

Abstract: A method of manufacturing a semiconductor device includes forming a gate structure on a substrate; forming a sacrificial spacer may be formed on a sidewall of the gate substrate; implanting first impurities into portions of the substrate by a first ion implantation process using the gate structure and the sacrificial spacer as ion implantation masks to form source and drain regions; removing the sacrificial spacer; and implanting second impurities and carbon atoms into portions of the substrate by a second ion implantation process using the gate structure as an ion implantation mask to form source and drain extension regions and carbon doping regions, respectively.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device are provided. In a method of manufacturing a semiconductor device, a gate structure is formed on a substrate. An epitaxial layer is formed on a top surface of the substrate adjacent to the gate structure. An elevated source/drain (ESD) layer and an impurity region are formed by implanting impurities and carbon in the epitaxial layer and an upper portion of the substrate using the gate structure as an ion implantation mask. A metal silicide layer is formed on the ESD layer.

Abstract: Disclosed herein are a nanowire and a current-induced domain wall displacement-type memory device using the same.

Abstract: A semiconductor device and method for manufacturing the same are provided. A dielectric can be formed on a silicon substrate, and a contact hole can be formed in the dielectric. A portion of the silicon substrate can etched through the contact hole.

Abstract: A method of fabricating a semiconductor device including at least one of the following steps: Forming a metal layer on and/over a semiconductor substrate. Forming a diffusion barrier film on and/over the metal layer. Forming a metal layer pattern and an diffusion barrier film pattern by etching the metal layer and the diffusion barrier film. Forming an insulating film covering the metal layer pattern and the diffusion barrier film pattern. Forming a via hole using a photoresist pattern on and/or over the insulating film. Forming a contact by filling the via hole with an electrically conductive material.

Abstract: Semiconductor devices having a via hole and methods for forming a via hole in a semiconductor device are disclosed. A disclosed method comprises performing a first etching process on an insulating layer to form a via hole, and performing a second etching process to enlarge a bottom of the via hole.