Abstract: Generally discussed herein are systems, devices, and methods that include an organic high density interconnect structure and techniques for making the same. According to an example a method can include forming one or more low density buildup layers on a core, conductive interconnect material of the one or more low density buildup layers electrically and mechanically connected to conductive interconnect material of the core, forming one or more high density buildup layers on an exposed low density buildup layer of the one or more low density buildup layers, conductive interconnect material of the high density buildup layers electrically and mechanically connected to the conductive interconnect material of the one or more low density buildup layers, and forming another low density buildup layer on and around an exposed high density buildup layer of the one or more high density buildup layers.

Abstract: An integrated circuit (IC) package substrate, comprising a metallization level within a dielectric material. The metallization level comprises a plurality of conductive features, each having a top surface and a sidewall surface. The top surface of a first conductive feature of the plurality of conductive features has a first average surface roughness, and the sidewall surface of a second conductive feature of the plurality of conductive features has a second average surface roughness that is less than the first average surface roughness.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a package substrate, wherein the package substrate comprises a first routing architecture. In an embodiment, the electronic package further comprises a first die on the package substrate, a second die on the package substrate, wherein the first die is electrically coupled to the second die by a bridge embedded in the package substrate, and a routing patch on the package substrate. In an embodiment, the routing patch is electrically coupled to the second die, and wherein the routing patch comprises a second routing architecture that is different than the first routing architecture.

Abstract: A package substrate stack modeler includes a manufacturing modeler, configured to generate a model of a real package substrate stack based on an ideal design of the package substrate stack; a signal integrity model, configured to determine a signal integrity of a metal trace of the real package substrate stack; and a yield model, configured to determine a yield of the real package substrate stack; wherein the metal trace comprises a first value of a trace variable; further comprising a processor, configured to select a second value of the trace variable of the metal trace based on the determined signal integrity of the metal trace or the determined yield of the package substrate stack model.

Abstract: In accordance with disclosed embodiments, there is an antenna package using a ball attach array to connect an antenna and base substrates of the package. One example is an RF module package including an RF antenna package having a stack material in between a top and a bottom antenna layer to form multiple antenna plane surfaces, a base package having alternating patterned conductive and dielectric layers to form routing through the base package, and a bond between a bottom surface of the antenna package and to a top surface of the base package.

Abstract: In accordance with disclosed embodiments, there is an antenna package using a ball attach array to connect an antenna and base substrates of the package. One example is an RF module package including an RF antenna package having a stack material in between a top and a bottom antenna layer to form multiple antenna plane surfaces, a base package having alternating patterned conductive and dielectric layers to form routing through the base package, and a bond between a bottom surface of the antenna package and to a top surface of the base package.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a package substrate, wherein the package substrate comprises a first routing architecture. In an embodiment, the electronic package further comprises a first die on the package substrate, a second die on the package substrate, wherein the first die is electrically coupled to the second die by a bridge embedded in the package substrate, and a routing patch on the package substrate. In an embodiment, the routing patch is electrically coupled to the second die, and wherein the routing patch comprises a second routing architecture that is different than the first routing architecture.

Abstract: Disclosed herein are integrated circuit (IC) structures that may be included in package substrates. For example, disclosed herein are passive components in package substrate, wherein the passive components include at least one non-circular via and at least one pad in contact with the at least one non-circular via, and the passive components include an inductor or a capacitor. Other embodiments are also disclosed.

Abstract: In one embodiment, a package substrate includes a substrate core, buildup layers, and one or more conductive traces. The substrate core includes at least one dielectric layer with hollow glass fibers. The buildup layers include dielectric layers below and above the substrate core.

Abstract: Embodiments herein describe techniques for a semiconductor device including a package substrate having a core layer. An inductor may include a first coaxial line and a second coaxial line vertically through the core layer, and an interconnect within the package substrate coupling the first coaxial line and the second coaxial line. A first magnetic segment may surround the first coaxial line within the core layer, and a second magnetic segment may surround the second coaxial line within the core layer. In addition, a third magnetic segment may surround the interconnect and be coupled to the first magnetic segment and the second magnetic segment. Other embodiments may be described and/or claimed.

Abstract: Embodiments include a package substrate, a semiconductor package, and a method of forming the package substrate. A package substrate includes a core substrate between a first alternate core substrate and a second alternate core substrate. The first alternate core substrate includes conductive layers and vias. The package substrate includes a dielectric layer surrounding the core and first and second alternate substrates, a first conductive layer on a top surface of the dielectric layer, and a second conductive layer on top surfaces of the core and first and second alternate substrates, where the dielectric layer is over/under the core and first and second alternate substrates. The package substrate includes a third conductive layer on bottom surfaces of the core and first and second alternate substrates. The conductive layers are coupled to the vias within the first alternate core substrate, where the conductive layers and vias couple the second and third layers.

Abstract: Generally discussed herein are systems, devices, and methods that include an organic high density interconnect structure and techniques for making the same. According to an example a method can include forming one or more low density buildup layers on a core, conductive interconnect material of the one or more low density buildup layers electrically and mechanically connected to conductive interconnect material of the core, forming one or more high density buildup layers on an exposed low density buildup layer of the one or more low density buildup layers, conductive interconnect material of the high density buildup layers electrically and mechanically connected to the conductive interconnect material of the one or more low density buildup layers, and forming another low density buildup layer on and around an exposed high density buildup layer of the one or more high density buildup layers.

Abstract: Described are microelectronic devices including a substrate formed with multiple build-up layers, and having at least one build-up layer formed of a fiber-containing material. A substrate can include a buildup layers surrounding an embedded die, or outward of the build-up layer surrounding the embedded die that includes a fiber-containing dielectric. Multiple build-up layers located inward from a layer formed of a fiber-containing dielectric will be formed of a fiber-free dielectric.

Abstract: Generally discussed herein are systems, devices, and methods that include an organic high density interconnect structure and techniques for making the same. According to an example a method can include forming one or more low density buildup layers on a core, conductive interconnect material of the one or more low density buildup layers electrically and mechanically connected to conductive interconnect material of the core, forming one or more high density buildup layers on an exposed low density buildup layer of the one or more low density buildup layers, conductive interconnect material of the high density buildup layers electrically and mechanically connected to the conductive interconnect material of the one or more low density buildup layers, and forming another low density buildup layer on and around an exposed high density buildup layer of the one or more high density buildup layers.

Abstract: An inductor can be formed in a coreless electronic substrate, such that the fabrication process does not result in the magnetic material used in the inductor leaching into plating and/or etching solutions/chemistries, and results in a unique inductor structure. This may be achieved by forming conductive vias with a lithographic process, rather than a standard laser process, in combination with panel planarization to prevent exposure of the magnetic material to the plating and/or etching solutions/chemistries.

Abstract: In accordance with disclosed embodiments, there is an antenna package using a ball attach array to connect an antenna and base substrates of the package. One example is an RF module package including an RF antenna package having a stack material in between a top and a bottom antenna layer to form multiple antenna plane surfaces, a base package having alternating patterned conductive and dielectric layers to form routing through the base package, and a bond between a bottom surface of the antenna package and to a top surface of the base package.

Abstract: An integrated circuit (IC) package substrate, comprising a metallization level within a dielectric material. The metallization level comprises a plurality of conductive features, each having a top surface and a sidewall surface. The top surface of a first conductive feature of the plurality of conductive features has a first average surface roughness, and the sidewall surface of a second conductive feature of the plurality of conductive features has a second average surface roughness that is less than the first average surface roughness.

Abstract: Disclosed herein are integrated circuit (IC) package substrates formed with a dielectric bi-layer, and related devices and methods. In some embodiments, an IC package substrate is fabricated by: forming a raised feature on a conductive layer; forming a dielectric bi-layer on the conductive layer, where the dielectric bi-layer includes a first sub-layer having a first material property and a second sub-layer having a second material property, and where the top surface of the second sub-layer is substantially planar with the top surface of the raised feature; and removing the first sub-layer until the second material property is detected to reveal the conductive feature. In some embodiments, an IC package substrate is fabricated by: forming a dielectric bi-layer on a patterned conductive layer, where the first sub-layer is less susceptible to removal than the second sub-layer; forming an opening in the dielectric bi-layer; etching; and forming a via having vertical sidewalls.

Abstract: Generally discussed herein are systems, devices, and methods that include an organic high density interconnect structure and techniques for making the same. According to an example a method can include forming one or more low density buildup layers on a core, conductive interconnect material of the one or more low density buildup layers electrically and mechanically connected to conductive interconnect material of the core, forming one or more high density buildup layers on an exposed low density buildup layer of the one or more low density buildup layers, conductive interconnect material of the high density buildup layers electrically and mechanically connected to the conductive interconnect material of the one or more low density buildup layers, and forming another low density buildup layer on and around an exposed high density buildup layer of the one or more high density buildup layers.

Abstract: Generally discussed herein are systems, devices, and methods that include an organic high density interconnect structure and techniques for making the same. According to an example a method can include forming one or more low density buildup layers on a core, conductive interconnect material of the one or more low density buildup layers electrically and mechanically connected to conductive interconnect material of the core, forming one or more high density buildup layers on an exposed low density buildup layer of the one or more low density buildup layers, conductive interconnect material of the high density buildup layers electrically and mechanically connected to the conductive interconnect material of the one or more low density buildup layers, and forming another low density buildup layer on and around an exposed high density buildup layer of the one or more high density buildup layers.