Patents by Inventor Srivatsan Sathyamurthy

Srivatsan Sathyamurthy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10242770
    Abstract: A method for producing a long length high temperature superconductor wire, includes providing a substrate, having a surface with a length of at least 50 meters and a width. The surface supports a biaxially textured high temperature superconducting layer and the biaxially textured high temperature superconducting layer has a length and a width corresponding to the length and width of the surface of the substrate. The method includes irradiating the biaxially textured high temperature superconductor layer with an ion beam impinging uniformly along the length and across the width of the biaxially textured high temperature superconductor layer to produce a uniform distribution of pinning microstructures in the biaxially textured high temperature superconductor layer.
    Type: Grant
    Filed: August 25, 2016
    Date of Patent: March 26, 2019
    Assignees: American Superconductor Corporation, Brookhaven Science Associates, LLC
    Inventors: Martin W. Rupich, Srivatsan Sathyamurthy, Qiang Li, Vyacheslav F. Solovyov
  • Publication number: 20170062098
    Abstract: A method for producing a long length high temperature superconductor wire, includes providing a substrate, having a surface with a length of at least 50 meters and a width. The surface supports a biaxially textured high temperature superconducting layer and the biaxially textured high temperature superconducting layer has a length and a width corresponding to the length and width of the surface of the substrate. The method includes irradiating the biaxially textured high temperature superconductor layer with an ion beam impinging uniformly along the length and across the width of the biaxially textured high temperature superconductor layer to produce a uniform distribution of pinning microstructures in the biaxially textured high temperature superconductor layer.
    Type: Application
    Filed: August 25, 2016
    Publication date: March 2, 2017
    Inventors: Martin W. Rupich, Srivatsan Sathyamurthy, Qiang Li, Vyacheslav F. Solovyov
  • Patent number: 8428671
    Abstract: An article including a substrate and a layer of a homogeneous metal-oxyfluoride intermediate film disposed on the substrate, the intermediate film containing a rare earth metal, an alkaline earth metal, and a transition metal. The intermediate film has a defect density less than 20 percent and, upon thermal treatment, is capable of converting to a homogeneous rare earth metal-alkaline earth metal-transition metal-oxide superconductor film with a stoichiometric thickness greater than 1 ?m and up to 5 ?m. Also disclosed is another article including a substrate and the homogeneous superconductor film with a stoichiometric thickness greater than 1 ?m and up to 5 ?m. Further, methods of making these two articles are described.
    Type: Grant
    Filed: March 31, 2010
    Date of Patent: April 23, 2013
    Assignee: American Superconductor Corporation
    Inventors: Srivatsan Sathyamurthy, Martin W. Rupich
  • Patent number: 8088503
    Abstract: A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.
    Type: Grant
    Filed: January 30, 2009
    Date of Patent: January 3, 2012
    Assignees: UT-Battelle, LLC, The Regents of the University of California
    Inventors: Mariappan Parans Paranthaman, Srivatsan Sathyamurthy, Tolga Aytug, Paul N Arendt, Liliana Stan, Stephen R Foltyn
  • Publication number: 20110245083
    Abstract: An article including a substrate and a layer of a homogeneous metal-oxyfluoride intermediate film disposed on the substrate, the intermediate film containing a rare earth metal, an alkaline earth metal, and a transition metal. The intermediate film has a defect density less than 20 percent and, upon thermal treatment, is capable of converting to a homogeneous rare earth metal-alkaline earth metal-transition metal-oxide superconductor film with a stoichiometric thickness greater than 1 ?m and up to 5 ?m. Also disclosed is another article including a substrate and the homogeneous superconductor film with a stoichiometric thickness greater than 1 ?m and up to 5 ?m. Further, methods of making these two articles are described.
    Type: Application
    Filed: March 31, 2010
    Publication date: October 6, 2011
    Applicant: American Superconductor Corporation
    Inventors: Srivatsan Sathyamurthy, Martin W. Rupich
  • Patent number: 7553799
    Abstract: A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.
    Type: Grant
    Filed: June 2, 2005
    Date of Patent: June 30, 2009
    Assignee: UT-Battelle, LLC
    Inventors: Mariappan Parans Paranthaman, Srivatsan Sathyamurthy, Tolga Aytug, Paul N. Arendt, Liliana Stan, Stephen R. Foltyn
  • Publication number: 20090137401
    Abstract: A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.
    Type: Application
    Filed: January 30, 2009
    Publication date: May 28, 2009
    Applicant: UT-BATTELLE, LLC
    Inventors: Mariappan Parans Paranthaman, Srivatsan Sathyamurthy, Tolga Aytug, Paul N. Arendt, Liliana Stan, Stephen R. Foltyn
  • Publication number: 20060276344
    Abstract: A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.
    Type: Application
    Filed: June 2, 2005
    Publication date: December 7, 2006
    Inventors: Mariappan Paranthaman, Srivatsan Sathyamurthy, Tolga Aytug, Paul Arendt, Liliana Stan, Stephen Foltyn