Abstract: A contactor assembly for automated testing a device under test (DUT) that includes a plurality of separate electrodes including a first electrode includes a tester load board and a contactor body coupled to the tester load board. A plurality of contactor pins carried by the contactor body includes a first contactor pin and a second contactor pin that are electrically coupled to the tester load board. The tester load board is configured to couple the plurality of contactor pins to automatic test equipment (ATE) for testing the DUT. The first contactor pin and second contactor pin are positioned to both contact the first electrode. A first path to the first contactor pin and a second path to the second contactor pin are electrically shorted together by the contactor assembly to be electrically in parallel to provide redundant paths to the first electrode during automated testing of the DUT.

Abstract: A contactor assembly for automated testing a device under test (DUT) that includes a plurality of separate electrodes including a first electrode includes a tester load board and a contactor body coupled to the tester load board. A plurality of contactor pins carried by the contactor body includes a first contactor pin and a second contactor pin that are electrically coupled to the tester load board. The tester load board is configured to couple the plurality of contactor pins to automatic test equipment (ATE) for testing the DUT. The first contactor pin and second contactor pin are positioned to both contact the first electrode. A first path to the first contactor pin and a second path to the second contactor pin are electrically shorted together by the contactor assembly to be electrically in parallel to provide redundant paths to the first electrode during automated testing of the DUT.

Abstract: A method of planarizing a non-conformal HPDCVD STI oxide isolation using an underlying first nitride layer and an overlying second nitride polish stop layer. The HPDCVD oxide is deposited so that the second nitride polish stop is formed coplanar with the first nitride layer over the center of narrow trenches. Both first and second nitride layers act as polish stops. The invention forms a first nitride layer over the substrate. Wide and narrow trenches are then etched in the substrate. In an important step, a non-conformal HDPCVD oxide layer is formed filling the trenches to a level about 500 .ANG. above the substrate surface. Then a second nitride layer is formed over the non-conformal HDPCVD oxide layer. Next, the structure is chemical-mechanical polished using both the first and nitride layers as polish stops. The second nitride layer and narrow extruded parts of the HDP-CVD oxide layer are removed in a DHF etch. Next, the first nitride layer is removed.