Abstract: A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.

Abstract: A metal plus low dielectric constant (low-k) interconnect structure is provided for a semiconductor device wherein adjacent regions in a surface separated by a dielectric have dimensions in width and spacing in the sub 250 nanometer range, and in which reduced lateral leakage current between adjacent metal lines, and a lower effective dielectric constant than a conventional structure, is achieved by the positioning of a differentiating or mask member that is applied for the protection of the dielectric in subsequent processing operations, at a position about 2-5 nanometers below a, to be planarized, surface where there will be a lower electric field.

Abstract: A metal plus low dielectric constant (low-k) interconnect structure is provided for a semiconductor device wherein adjacent regions in a surface separated by a dielectric have dimensions in width and spacing in the sub 250 nanometer range, and in which reduced lateral leakage current between adjacent metal lines, and a lower effective dielectric constant than a conventional structure, is achieved by the positioning of a differentiating or mask member that is applied for the protection of the dielectric in subsequent processing operations, at a position about 2-5 nanometers below a, to be planarized, surface where there will be a lower electric field.

Abstract: A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.

Abstract: A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.

Abstract: A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes the problem of fluorine from a fluorine containing dielectric reacting with other materials while maintaining a bulk dielectric material of sufficiently high or original fluorine content to maintain an effective low dielectric constant in semiconductor chip wiring interconnect structures.