Abstract: An active matrix display has a column driver for providing signals to the pixels for driving the display elements, the column driver comprising digital to analogue converter circuitry providing a first number of display element drive levels. Within each pixel, the first number of display element drive levels is converted into a second, greater number, of pixel grey levels. This combines multi-level digital to analogue conversion with in-pixel level generation and enables the complexity of the DACs to be reduced so that they can be integrated onto the display substrate, for example using low temperature polysilicon processing.

Abstract: A display device has an array 40 of pixels and row and column driver circuitry comprising row driver circuit portions R and column driver circuit portions C, each pixel being addressed by a row driver circuit portion R and a column driver circuit portion C which connect to respective row and column conductor lines. The array of pixels has a non-rectangular outer shape, and the device comprises at least three row driver circuit portions R and at least three column driver circuit portions C disposed alternately around the outer periphery of the array. This arrangement enables row and column drivers to be divided into portions which are arranged in such a way that addressing can be provided for complicated display shapes.

Abstract: A color liquid crystal display device has an array of display pixels (10) for modulating input light and an array of associated color filter elements (40) which comprise electro-optic filtering elements switchable electrically between a color filtering state in which a required color output is produced and a state in which they are substantially transparent to the input light. Such switching can be used beneficially, for example to reduce power consumption by sacrificing full color output and allowing the brightness level of a back light to be decreased in view of the increased optical efficiency of the pixels when the filter elements are in their transparent state, or to improve viewability in the case of a reflective display used in poor ambient lighting.

Abstract: A method of producing a top gate thin-film transistor comprises the steps of forming doped silicon source and drain regions (6a,8a) on an insulating substrate (2) and subjecting the face of the substrate (2) on which the source and drain regions (6a,8a) are formed to plasma treatment to form a doped surface layer. An amorphous silicon layer (12) is formed on the doped surface layer over at least the spacing between the source and drain regions (6a,8a) and an insulated gate structure (14,16) is formed over the amorphous silicon layer (12). Laser annealing of areas of the amorphous silicon layer not shielded by the gate conductor is carried out to form polysilicon portions (12a,12b) having the impurities diffused therein. In the method of the invention, doped silicon source and drain regions underlie the silicon layer to be crystallized using the laser annealing process. It has been found that the laser annealing process can then result in crystallization of the full thickness of the amorphous silicon layer.

Abstract: A method of constructing an active matrix pixel device uses a universal active matrix (UAM) comprising a matrix array of switching elements whose spacing defines a base pitch and a pixel array comprising a matrix array of pixel electrodes whose spacing defines a pixel pitch. The pixel pitch is greater than the base pitch. A large proportion of the construction process can be carried out before the customization of the device. Using a common UAM enables a reduction in the time between the customer ordering the device and the completion time. The cost of meeting customer specific requirements for the fabrication of active matrix pixel devices is thus reduced.

Abstract: A transistor substrate for a liquid crystal display comprises an array of insulated-gate staggered TFTs and a capacitor (36) associated with each transistor. The gate insulator (400,420) comprises a first inorganic layer (400) and a second, polymer or spin-on glass layer (420), of which layers only the polymer or spin-on glass layer (420) extends to the capacitor (36) to define the capacitor dielectric.

Abstract: A method of producing a top gate thin-film transistor comprises the steps of forming doped silicon source and drain regions (6a,8a) on an insulating substrate (2) and subjecting the face of the substrate (2) on which the source and drain regions (6a,8a) are formed to plasma treatment to form a doped surface layer. An amorphous silicon layer (12) is formed on the doped surface layer over at least the spacing between the source and drain regions (6a,8a) and an insulated gate structure (14,16) is formed over the amorphous silicon layer (12). Laser annealing of areas of the amorphous silicon layer not shielded by the gate conductor is carried out to form polysilicon portions (12a,12b) having the impurities diffused therein. In the method of the invention, doped silicon source and drain regions underlie the silicon layer to be crystallized using the laser annealing process. It has been found that the laser annealing process can then result in crystallization of the full thickness of the amorphous silicon layer.

Abstract: The invention relates to an active matrix liquid crystal display, and in particular to an active matrix plate incorporating driver circuits (3) for the row (13) and column (9) electrodes. The driver circuits (3) are arranged on substrate (1) underneath the row (13) and column electrodes (9) and connected to the row and column electrodes (9,13) through vias (33). Reflective pixel electrodes (21) are provided. The driver circuits (3) are distributed, preferably in a two dimensional array, so that each of the row and/or column electrodes is connected to a driver circuit (3).

Abstract: A method of constructing an active matrix pixel device uses a universal active matrix (UAM) (81) comprising a matrix array of switching elements (20) whose spacing defines a base pitch and a pixel array comprising a matrix array of pixel electrodes (19) whose spacing defines a pixel pitch. The pixel pitch is greater than the base pitch. A large proportion of the construction process can be carried out before the customisation of the device. Using a common UAM (81) enables a reduction in the time between the customer ordering the device and the completion time. The cost of meeting customer specific requirements for the fabrication of active matrix pixel devices is thus reduced.

Abstract: A method of constructing an active matrix pixel device uses a universal active matrix (UAM) (81) comprising a matrix array of switching elements (20) whose spacing defines a base pitch and a pixel array comprising a matrix array of pixel electrodes (19) whose spacing defines a pixel pitch. The pixel pitch is greater than the base pitch. A large proportion of the construction process can be carried out before the customisation of the device. Using a common UAM (81) enables a reduction in the time between the customer ordering the device and the completion time. The cost of meeting customer specific requirements for the fabrication of active matrix pixel devices is thus reduced.

Abstract: The invention provides a method of manufacturing an electronic device including a vertical thin film transistor. A layer (8) of semiconductor material is provided over an insulated gate electrode (2). A negative resist (14) is used to define source and drain electrodes (26,28) which extend over the insulating layer (8) up to the step formed therein adjacent an edge (16A) of the gate electrode (2).

Abstract: The invention provides a method of manufacturing an electronic device including a vertical thin film transistor. A layer (8) of semiconductor material is provided over an insulated gate electrode (2). A negative resist (14) is used to define source and drain electrodes (26,28) which extend over the insulating layer (8) up to the step formed therein adjacent an edge (16A) of the gate electrode (2).

Abstract: A method of producing a top gate thin-film transistor comprises the steps of forming doped silicon source and drain regions (6a,8a) on an insulating substrate (2) and subjecting the face of the substrate (2) on which the source and drain regions (6a,8a) are formed to plasma treatment to form a doped surface layer. An amorphous silicon layer (12) is formed on the doped surface layer over at least the spacing between the source and drain regions (6a,8a) and an insulated gate structure (14, 16) is formed over the amorphous silicon layer (12). Laser annealing of areas of the amorphous silicon layer not shielded by the gate conductor is carried out to form polysilicon portions (12a, 12b) having the impurities diffused therein. In the method of the invention, doped silicon source and drain regions underlie the silicon layer to be crystallized using the laser annealing process. It has been found that the laser annealing process can then result in crystallization of the full thickness of the amorphous silicon layer.

Abstract: A memory device includes an array of memory elements overlying a plurality of driver cells. Vias through an insulating layer connect the driver cells to the memory elements. The vias are distributed over the area of the array to connect the individual driver cells to the respective row and and/or column conductors of the memory array.

Abstract: Short channel thin film transistors suffer from unacceptably high leakage currents. The invention provides an electronic device including a thin film transistor in which the length (20) of the channel of the transistor is 1 &mgr;m or less, and the mobility of the semiconductor material in the channel is less than 0.2 cm2/Vs. The selection of a low mobility semiconductor material results in acceptable off-current characteristics and its effect on the switching speed of the device is compensated for by the short channel length (20) of the device.

Abstract: A method of constructing an active matrix pixel device uses a universal active matrix (UAM) (81) comprising a matrix array of switching elements (20) (whose spacing defines a base pitch and a pixel array comprising a matric array of pixel electrodes (19) whose spacing defines a pixel pitch. The pixel pitch is greater than the base pitch. A large proportion of the construction process can be carried out before the customisation of the device. Using a common UAM (81) enables a reduction in the time between the customer ordering the device and the completion time. The cost of meeting customer specific requirements for the fabrication of active matrix pixel devices is thus reduced.

Abstract: A micromechanical switch (1) is disclosed together with a method of manufacturing the same. The micromechanical switch comprises a beam (13) at least partially suspended above a planar substrate (10); two control electrodes (12, 19), one of which is at least partially located above the beam (19) and the other is at least partially located below the beam (12), both in relation to the substrate; and at least one contact electrode (11, 18); wherein applying a potential at either one of the control electrodes generates an attractive force between that control electrode and a conductive portion of the beam (15, 17) whereby the beam is caused to deflect in a direction (25) perpendicular to the plane of the substrate; and wherein applying a potential to at least one of the control electrodes causes a conductive portion of the beam to contact the or one of the contact electrodes.

Abstract: The invention relates to an active matrix liquid crystal display, and in particular to an active matrix plate incorporating driver circuits (3) for the row (13) and column (9) electrodes. The driver circuits (3) are arranged on substrate (1) underneath the row (13) and column electrodes (9) and connected to the row and column electrodes (9,13) through vias (33). Reflective pixel electrodes (21) are provided. The driver circuits (3) are distributed, preferably in a two dimensional array, so that each of the row and/or column electrodes is connected to a driver circuit (3).

Abstract: A memory device comprises an array of memory elements (15) overlying driver cells (3). Vias (21) connect the driver cells (3) to the memory elements (15). The vias are distributed over the area of the array to connect the driver cells (3) to the row and column conductors (9, 13) of the memory array.

Abstract: A colour liquid crystal display device has an array of display pixels (10) for modulating input light and an array of associated colour filter elements (40) which comprise electro-optic filtering elements switchable electrically between a colour filtering state in which a required colour output is produced and a state in which they are substantially transparent to the input light. Such switching can be used beneficially, for example to reduce power consumption by sacrificing full colour output and allowing the brightness level of a back light to be decreased in view of the increased optical efficiency of the pixels when the filter elements are in their transparent state, or to improve viewability in the case of a reflective display used in poor ambient lighting.