Abstract: A method for protecting a surface of a substrate during processing includes a) providing a solution forming a co-polymer having a ceiling temperature; b) dispensing the solution onto a surface of the substrate to form a sacrificial protective layer, wherein the co-polymer is kinetically trapped to allow storage at a temperature above the ceiling temperature; c) exposing the substrate to ambient conditions for a predetermined period; and d) de-polymerizing the sacrificial protective layer by using stimuli selected from a group consisting of ultraviolet (UV) light and heat.

Abstract: Removing a stimuli responsive polymer (SRP) from a substrate includes controlled degradation. In certain embodiments of the methods described herein, removing SRPs includes exposure to two reactants that react to form an acid or base that can trigger the degradation of the SRP. The exposure occurs sequentially to provide more precise top down control. In some embodiments, the methods involve diffusing a compound, or a reactant that reacts to form a compound, only to a top portion of the SRP. The top portion is then degraded and removed, leaving film the remaining SRP intact. The exposure and removal cycles are repeated.

Abstract: The present disclosure relates to a stimulus responsive polymer (SRP) that includes a homopolymer. Methods, films, and formulations employing an SRP are also described herein.

Abstract: Removing stimulus responsive polymers (SRPs) includes exposure to high energy metastable species, generated in a noble gas plasma, at an elevated temperature. The metastable species have sufficient energies and lifetimes to scission bonds on the polymer or other residues. At temperatures greater than the ceiling temperature of the SRP, there is a strong thermodynamic driving force to revert to volatile monomers once bond scissioning has occurred. The metastable species are not chemically reactive and do not appreciably affect the underlying surface. The high energy metastable species are effective at removing residues that remain after exposure to other stimuli such as heat.

Abstract: A method includes performing a first substrate treatment on a substrate using a first dry process in a first substrate processing tool operating at vacuum; after the first substrate treatment, depositing a polymer film on an exposed surface of the substrate using a chemical vapor deposition (CVD) process in the first substrate processing tool; removing the substrate from the first substrate processing tool for a queue period; after the queue period, removing the polymer film from the substrate; and performing a second substrate treatment on the substrate using a second dry process in a second substrate processing tool.

Abstract: Removing a stimuli responsive polymer (SRP) from a substrate includes controlled degradation. In certain embodiments of the methods described herein, removing SRPs includes exposure to two reactants that react to form an acid or base that can trigger the degradation of the SRP. The exposure occurs sequentially to provide more precise top down control. In some embodiments, the methods involve diffusing a compound, or a reactant that reacts to form a compound, only to a top portion of the SRP. The top portion is then degraded and removed, leaving the remaining SRP intact. The exposure and removal cycles are repeated.

Abstract: The present disclosure relates to methods of forming a film including small molecules. Such methods can optionally include removing such small molecules, such as by way of sublimation, evaporation, or conversion to a more volatile form.

Abstract: Formulations for forming stimulus responsive polymers (SRPs) on semiconductor substrates include organic weak acids. Methods of protecting sensitive substrates including forming an SRP layer on sensitive substrates and forming one or more cap layers on the SRP layer.

Abstract: Systems and methods for drying a substrate including a plurality of high aspect ratio (HAR) structures are performed after at least one of wet etching and/or wet cleaning the substrate using at least one of wet etching solution and/or wet cleaning solution, respectively, and without drying the substrate. Fluid between the plurality of HAR structures is displaced using a solvent including a bracing material. After the solvent evaporates, the bracing material precipitates out of solution and at least partially fills the plurality of HAR structures. The substrate is exposed to plasma generated using a plasma gas chemistry that is hydrogen rich to remove the bracing material thereby drying the substrate including the HAR structures without damaging the plurality of HAR structures.

Abstract: Provided herein are methods of selectively etching silicon-containing block copolymer (BCP) materials. The methods involve exposing a BCP material that includes at least one silicon-containing block and at least one non-silicon-containing block to a plasma that has a reducing chemistry. The reducing plasma selectively removes the non-silicon-containing block, the silicon-containing block to be used in further processing. In some embodiments, the silicon-containing block is used as an etch mask. The reducing plasma reduces or eliminates profile bowing and undercut of the silicon-containing domains, allowing processing of high aspect ratio features. Examples of reducing chemistries include nitrogen (N2), hydrogen (H2), ammonia (NH3), hydrazine (N2H4), and mixtures thereof. Also provided are apparatuses to perform the methods.

Abstract: An apparatus for freeze drying a substrate is provided. A chamber for receiving a substrate is provided. An electrostatic chuck (ESC) for supporting and electrostatically clamping the substrate is within the chamber. A temperature controller controls the temperature of the electrostatic chuck. A condenser is connected to the chamber. A vacuum pump is in fluid connection with the chamber.

Abstract: A method, for drying an etched layer with a plurality of structures with etched spaces between the plurality of structures is provided. A liquid is provided within the spaces on the etched layer. The liquid is displaced with a drying solution with a solvent. Some of the solvent is removed from the drying solution to form a solid from the solution, wherein the solid at least fill half the height of the etched high aspect ratio spaces. The solid is removed.

Abstract: Provided herein are methods of selectively etching silicon-containing block copolymer (BCP) materials. The methods involve exposing a BCP material that includes at least one silicon-containing block and at least one non-silicon-containing block to a plasma that has a reducing chemistry. The reducing plasma selectively removes the non-silicon-containing block, the silicon-containing block to be used in further processing. In some embodiments, the silicon-containing block is used as an etch mask. The reducing plasma reduces or eliminates profile bowing and undercut of the silicon-containing domains, allowing processing of high aspect ratio features. Examples of reducing chemistries include nitrogen (N2), hydrogen (H2), ammonia (NH3), hydrazine (N2H4), and mixtures thereof. Also provided are apparatuses to perform the methods.

Abstract: Systems and methods for drying a substrate including a plurality of high aspect ratio (HAR) structures are performed after at least one of wet etching and/or wet cleaning the substrate using at least one of wet etching solution and/or wet cleaning solution, respectively, and without drying the substrate. Fluid between the plurality of HAR structures is displaced using a solvent including a bracing material. After the solvent evaporates, the bracing material precipitates out of solution and at least partially fills the plurality of HAR structures. The substrate is exposed to plasma generated using a plasma gas chemistry that is hydrogen rich to remove the bracing material thereby drying the substrate including the HAR structures without damaging the plurality of HAR structures.

Abstract: A method, for drying an etched layer with a plurality of structures with etched spaces between the plurality of structures is provided. A liquid is provided within the spaces on the etched layer. The liquid is displaced with a drying solution with a solvent. Some of the solvent is removed from the drying solution to form a solid from the solution, wherein the solid at least fill half the height of the etched high aspect ratio spaces. The solid is removed.

Abstract: An apparatus for delamination drying a substrate is provided. A chamber for receiving a substrate is provided. A chuck supports and clamps the substrate within the chamber. A temperature controller controls the temperature of the substrate and is able to cool the substrate. A vacuum pump is in fluid connection with the chamber. A tilting mechanism is able to tilt the chuck at least 90 degrees.

Abstract: A method for filling features in a layer over a substrate is provided. A dispersion of nanoparticles less than 5 nm is placed on the layer. The liquid is frozen by lowering a temperature of the liquid. The frozen liquid is sublimated by decreasing pressure and subsequently heating the frozen liquid, wherein the nanoparticles are not sublimated.

Abstract: An apparatus for delamination drying a substrate is provided. A chamber for receiving a substrate is provided. A chuck supports and clamps the substrate within the chamber. A temperature controller controls the temperature of the substrate and is able to cool the substrate. A vacuum pump is in fluid connection with the chamber. A tilting mechanism is able to tilt the chuck at least 90 degrees.

Abstract: A method for forming etched features in a low-k dielectric layer disposed below the photoresist mask in a plasma processing chamber is provided. Features are etched into the low-k dielectric layer through the photoresist mask. The photoresist mask is stripped, wherein the stripping comprising at least one cycle, wherein each cycle comprises a fluorocarbon stripping phase, comprising flowing a fluorocarbon stripping gas into the plasma processing chamber, forming a plasma from the fluorocarbon stripping gas, and stopping the flow of the fluorocarbon stripping gas into the plasma processing chamber and a reduced fluorocarbon stripping phase, comprising flowing a reduced fluorocarbon stripping gas that has a lower fluorocarbon flow rate than the fluorocarbon stripping gas into the plasma processing chamber, forming the plasma from the reduced fluorocarbon stripping gas, and stopping the flow of the reduced fluorocarbon stripping gas.

Abstract: An apparatus for freeze drying a substrate is provided. A chamber for receiving a substrate is provided. An electrostatic chuck (ESC) for supporting and electrostatically clamping the substrate is within the chamber. A temperature controller controls the temperature of the electrostatic chuck. A condenser is connected to the chamber. A vacuum pump is in fluid connection with the chamber.