Patents by Inventor Stevan S. Djordjevic
Stevan S. Djordjevic has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190187373Abstract: In some embodiments, an integrated photonic module contains, a silicon-on-insulator platform, an integrated photonic component, and an optical fiber. The silicon-on-insulator platform can contain a silicon-on-insulator photonic circuit, a co-fabricated spot size converter, and a co-fabricated micromachined trench structure. The co-fabricated micromachined trench structure can contain dimensions compatible with the optical fiber, and the optical fiber can be bonded to, and disposed at least partially within, the micromachined trench structure. The optical modes of the optical fiber, the integrated photonic component, the co-fabricated spot size converter, and the silicon-on-insulator photonic circuit can also be spatially aligned with one another.Type: ApplicationFiled: December 12, 2018Publication date: June 20, 2019Applicant: Roshmere, Inc.Inventors: Ivan Shubin, Stevan S. Djordjevic, Ping-Piu Kuo
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Patent number: 10222552Abstract: An integrated circuit is described. This integrated circuit includes an optical waveguide defined in a semiconductor layer, and a dielectric optical waveguide disposed on the semiconductor layer and that overlaps a region of the optical waveguide. Moreover, the dielectric optical waveguide includes an optical device (such as a mirror) on a facet separating a first portion of the dielectric optical waveguide and a second portion of the dielectric optical waveguide. The facet may be at an angle relative to a plane of the dielectric optical waveguide and may include a metal layer. During operation, an optical signal conveyed by the optical waveguide is evanescent coupled to the dielectric optical waveguide. Then, the optical signal may be reflected by the optical device. For example, the angle of the facet may be 45°, so that the optical signal is reflected normal to the plane of the dielectric optical waveguide.Type: GrantFiled: January 12, 2016Date of Patent: March 5, 2019Assignee: Oracle International CorporationInventors: Stevan S. Djordjevic, Xuezhe Zheng, Ashok V. Krishnamoorthy
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Publication number: 20180083420Abstract: A laser includes a reflective gain medium (RGM) comprising an optical gain material coupled with an associated reflector. The RGM is coupled to a spot-size converter (SSC), which optically couples the RGM to an optical reflector through a silicon waveguide. The SSC converts an optical mode-field size of the RGM to an optical mode-field size of the silicon waveguide. A negative thermo-optic coefficient (NTOC) waveguide is fabricated on top of the SSC. In this way, an optical signal, which originates from the RGM, passes into the SSC, is coupled into the NTOC waveguide, passes through the NTOC waveguide, and is coupled back into the SSC before passing into the silicon waveguide. During operation, the RGM, the spot-size converter, the NTOC waveguide, the silicon waveguide and the silicon mirror collectively form a lasing cavity for the athermal laser. Finally, a laser output is optically coupled to the lasing cavity.Type: ApplicationFiled: January 12, 2017Publication date: March 22, 2018Applicant: Oracle International CorporationInventors: Jock T. Bovington, Stevan S. Djordjevic, Xuezhe Zheng, Ashok V. Krishnamoorthy
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Patent number: 9923335Abstract: A laser includes a reflective gain medium (RGM) comprising an optical gain material coupled with an associated reflector. The RGM is coupled to a spot-size converter (SSC), which optically couples the RGM to an optical reflector through a silicon waveguide. The SSC converts an optical mode-field size of the RGM to an optical mode-field size of the silicon waveguide. A negative thermo-optic coefficient (NTOC) waveguide is fabricated on top of the SSC. In this way, an optical signal, which originates from the RGM, passes into the SSC, is coupled into the NTOC waveguide, passes through the NTOC waveguide, and is coupled back into the SSC before passing into the silicon waveguide. During operation, the RGM, the spot-size converter, the NTOC waveguide, the silicon waveguide and the silicon mirror collectively form a lasing cavity for the athermal laser. Finally, a laser output is optically coupled to the lasing cavity.Type: GrantFiled: January 12, 2017Date of Patent: March 20, 2018Assignee: Oracle International CorporationInventors: Jock T. Bovington, Stevan S. Djordjevic, Xuezhe Zheng, Ashok V. Krishnamoorthy
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Publication number: 20170199327Abstract: An integrated circuit is described. This integrated circuit includes an optical waveguide defined in a semiconductor layer, and a dielectric optical waveguide disposed on the semiconductor layer and that overlaps a region of the optical waveguide. Moreover, the dielectric optical waveguide includes an optical device (such as a mirror) on a facet separating a first portion of the dielectric optical waveguide and a second portion of the dielectric optical waveguide. The facet may be at an angle relative to a plane of the dielectric optical waveguide and may include a metal layer. During operation, an optical signal conveyed by the optical waveguide is evanescent coupled to the dielectric optical waveguide. Then, the optical signal may be reflected by the optical device. For example, the angle of the facet may be 45°, so that the optical signal is reflected normal to the plane of the dielectric optical waveguide.Type: ApplicationFiled: January 12, 2016Publication date: July 13, 2017Applicant: Oracle International CorporationInventors: Stevan S. Djordjevic, Xuezhe Zheng, Ashok V. Krishnamoorthy
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Patent number: 9470914Abstract: An electro-refraction modulator includes a series of layers with different doping levels surrounding a single-crystal regrown p-n junction implemented in a silicon-on-insulator (SOI) technology. The regrown p-n junction is spatially abrupt and precisely defined, which significantly increases the tuning efficiency of the electro-refraction modulator while maintaining acceptable insertion loss. Consequently, the electro-refraction modulator (such as a resonator modulator or a Mach-Zehnder interferometer modulator) can have high bandwidth, compact size and reduced drive voltage. The improved performance of the electro-refraction modulator may facilitate silicon-photonic links for use in applications such as wavelength-division multiplexing.Type: GrantFiled: July 23, 2015Date of Patent: October 18, 2016Assignee: ORACLE INTERNATIONAL CORPORATIONInventors: Stevan S. Djordjevic, John E. Cunningham, Ashok V. Krishnamoorthy
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Patent number: 9465169Abstract: An optical device is described. This optical device includes optical components having resonance wavelengths that match target values with a predefined accuracy (such as 0.1 nm) and with a predefined time stability (such as permanent or an infinite time stability) without thermal tuning and/or electronic tuning. The stable, accurate resonance wavelengths may be achieved using a wafer-scale, single (sub-second) shot trimming technique that permanently corrects the phase errors induced by material variations and fabrication inaccuracies in the optical components (and, more generally, resonant silicon-photonic optical components). In particular, the trimming technique may use photolithographic exposure of the optical components on the wafer in parallel, with time-modulation for each individual optical component based on active-element control.Type: GrantFiled: February 18, 2015Date of Patent: October 11, 2016Assignee: ORACLE INTERNATIONAL CORPORATIONInventors: Stevan S. Djordjevic, Shiyun Lin, Ivan Shubin, Xuezhe Zheng, John E. Cunningham, Ashok V. Krishnamoorthy
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Publication number: 20160238791Abstract: An optical device is described. This optical device includes optical components having resonance wavelengths that match target values with a predefined accuracy (such as 0.1 nm) and with a predefined time stability (such as permanent or an infinite time stability) without thermal tuning and/or electronic tuning. The stable, accurate resonance wavelengths may be achieved using a wafer-scale, single (sub-second) shot trimming technique that permanently corrects the phase errors induced by material variations and fabrication inaccuracies in the optical components (and, more generally, resonant silicon-photonic optical components). In particular, the trimming technique may use photolithographic exposure of the optical components on the wafer in parallel, with time-modulation for each individual optical component based on active-element control.Type: ApplicationFiled: February 18, 2015Publication date: August 18, 2016Applicant: Oracle International CorporationInventors: Stevan S. Djordjevic, Shiyun Lin, Ivan Shubin, Xuezhe Zheng, John E. Cunningham, Ashok V. Krishnamoorthy
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Patent number: 9411177Abstract: An integrated optical device includes an electro-absorption modulator disposed on a top surface of an optical waveguide. The electro-absorption modulator includes germanium disposed in a cavity between an n-type doped silicon sidewall and a p-type doped silicon sidewall. By applying a voltage between the n-type doped silicon sidewall and the p-type doped silicon sidewall, an electric field can be generated in a plane of the optical waveguide, but perpendicular to a propagation direction of the optical signal. This electric field shifts a band gap of the germanium, thereby modulating the optical signal.Type: GrantFiled: June 17, 2015Date of Patent: August 9, 2016Assignee: ORACLE INTERNATIONAL CORPORATIONInventors: John E. Cunningham, Jin Yao, Ivan Shubin, Guoliang Li, Xuezhe Zheng, Shiyun Lin, Hiren D. Thacker, Stevan S. Djordjevic, Ashok V. Krishnamoorthy
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Patent number: 9373934Abstract: A hybrid optical source includes a substrate with an optical amplifier (such as a III-V semiconductor optical amplifier). The substrate is coupled at an angle (such as an angle between 0 and 90°) to a silicon-on-insulator chip. In particular, the substrate may be optically coupled to the silicon-on-insulator chip by an optical coupler (such as a diffraction grating or a mirror) that efficiently couples (i.e., with low optical loss) an optical signal into a sub-micron silicon-on-insulator optical waveguide. Moreover, the silicon-on-insulator optical waveguide optically couples the light to a reflector to complete the hybrid optical source.Type: GrantFiled: January 27, 2014Date of Patent: June 21, 2016Assignee: ORACLE INTERNATIONAL CORPORATIONInventors: Shiyun Lin, Stevan S. Djordjevic, John E. Cunningham, Xuezhe Zheng, Ashok V. Krishnamoorthy
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Patent number: 9257814Abstract: A hybrid optical source that provides an optical signal having a wavelength is described. This hybrid optical source comprises an optical amplifier (such as a III-V semiconductor optical amplifier) that is butt-coupled or vertically coupled to a silicon-on-insulator (SOI) platform, and which outputs an optical signal. The SOI platform comprises an optical waveguide that conveys the optical signal. A temperature-compensation element included in the optical waveguide compensates for temperature dependence of the indexes of refraction of the optical amplifier and the optical waveguide. In addition, a reflector, included in or in-line with the optical waveguide and after the temperature-compensation element, reflects a portion of the optical signal and transmits another portion of the optical signal that has the wavelength.Type: GrantFiled: December 11, 2014Date of Patent: February 9, 2016Assignee: ORACLE INTERNATIONAL CORPORATIONInventors: Stevan S. Djordjevic, Xuezhe Zheng, Jin Yao, John E. Cunningham, Kannan Raj, Ashok V. Krishnamoorthy
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Publication number: 20150362764Abstract: An integrated optical device includes an electro-absorption modulator disposed on a top surface of an optical waveguide. The electro-absorption modulator includes germanium disposed in a cavity between an n-type doped silicon sidewall and a p-type doped silicon sidewall. By applying a voltage between the n-type doped silicon sidewall and the p-type doped silicon sidewall, an electric field can be generated in a plane of the optical waveguide, but perpendicular to a propagation direction of the optical signal. This electric field shifts a band gap of the germanium, thereby modulating the optical signal.Type: ApplicationFiled: June 17, 2015Publication date: December 17, 2015Inventors: John E. Cunningham, Jin Yao, Ivan Shubin, Guoliang Li, Xuezhe Zheng, Shiyun Lin, Hiren D. Thacker, Stevan S. Djordjevic, Ashok V. Krishnamoorthy
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Publication number: 20150293383Abstract: An integrated optical device includes an electro-absorption modulator disposed on a top surface of an optical waveguide. The electro-absorption modulator includes germanium disposed in a cavity between an n-type doped silicon sidewall and a p-type doped silicon sidewall. By applying a voltage between the n-type doped silicon sidewall and the p-type doped silicon sidewall, an electric field can be generated in a plane of the optical waveguide, but perpendicular to a propagation direction of the optical signal. This electric field shifts a band gap of the germanium, thereby modulating the optical signal.Type: ApplicationFiled: April 14, 2014Publication date: October 15, 2015Applicant: Oracle International CorporationInventors: John E. Cunningham, Jin Yao, Ivan Shubin, Guoliang Li, Xuezhe Zheng, Shiyun Lin, Hiren D. Thacker, Stevan S. Djordjevic, Ashok V. Krishnamoorthy
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Publication number: 20150280403Abstract: A hybrid optical source includes a substrate with an optical amplifier (such as a III-V semiconductor optical amplifier). The substrate is coupled at an angle (such as an angle between 0 and 90°) to a silicon-on-insulator chip. In particular, the substrate may be optically coupled to the silicon-on-insulator chip by an optical coupler (such as a diffraction grating or a mirror) that efficiently couples (i.e., with low optical loss) an optical signal into a sub-micron silicon-on-insulator optical waveguide. Moreover, the silicon-on-insulator optical waveguide optically couples the light to a reflector to complete the hybrid optical source.Type: ApplicationFiled: January 27, 2014Publication date: October 1, 2015Applicant: Oracle International CorporationInventors: Shiyun Lin, Stevan S. Djordjevic, John E. Cunningham, Xuezhe Zheng, Ashok V. Krishnamoorthy
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Patent number: 9142698Abstract: An integrated optical device includes an electro-absorption modulator disposed on a top surface of an optical waveguide. The electro-absorption modulator includes germanium disposed in a cavity between an n-type doped silicon sidewall and a p-type doped silicon sidewall. By applying a voltage between the n-type doped silicon sidewall and the p-type doped silicon sidewall, an electric field can be generated in a plane of the optical waveguide, but perpendicular to a propagation direction of the optical signal. This electric field shifts a band gap of the germanium, thereby modulating the optical signal.Type: GrantFiled: April 14, 2014Date of Patent: September 22, 2015Assignee: ORACLE INTERNATIONAL CORPORATIONInventors: John E. Cunningham, Jin Yao, Ivan Shubin, Guoliang Li, Xuezhe Zheng, Shiyun Lin, Hiren D. Thacker, Stevan S. Djordjevic, Ashok V. Krishnamoorthy