Abstract: An overlay applicator can include an overlay with a top side and a bottom side. The bottom side can include an adhesive agent configured to adhere to a screen of an electronic device. The overlay applicator can include an adhesive release liner. The adhesive release liner can include a top side and a bottom side. The top side of the adhesive release liner can be removably attached to the bottom side of the overlay. The adhesive release liner can be configured to protect the adhesive agent at the bottom side of the overlay from contaminants. The overlay applicator can include a protective film removably attached to the top side of the overlay. The overlay applicator can include an alignment tab. The alignment tab can include an alignment mechanism. The overlay applicator further can include a pull tab. The pull can include a wiper. Other embodiments are provided.

Abstract: A docking stand for an electronic device. The docking stand can include a bottom support surface configured to support a bottom side of the electronic device. The docking stand also can include a back support surface configured to support a side of the electronic device. The back support surface can be substantially upright when a base of the docking stand is placed on a substantially horizontal surface. The docking stand further can include a docking connector configured to removably attach to a docking port of the electronic device. The docking port can be proximate to the bottom side of the electronic device. The docking stand also can include an adjustment mechanism configured to adjust a height of the docking connector relative to the bottom support surface. Other embodiments are provided.

Abstract: In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and sputtered metal atoms are removed from the electron beam to reduce contamination.

Abstract: In a plasma reactor for processing a workpiece, an electron beam is employed as the plasma source, and a remote radical source is incorporated with the process chamber.

Abstract: A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented suppression electrode with individually biased segments to control electron beam density distribution.

Abstract: A plasma reactor has an overhead multiple coil antennas including a parallel spiral coil antenna and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.

Abstract: Radial transmission line based plasma sources for etch chambers are described. In an example, a radial transmission line based plasma source includes a gas delivery channel having a first end coupled to a gas inlet and having a second end coupled to a plasma showerhead. A folded or co-axial stub surrounds at least a portion of the gas delivery channel. An RF input is coupled to the folded or co-axial stub.

Abstract: Embodiments of methods and apparatus for plasma processing are provided herein. In some embodiments, an inductively coupled plasma apparatus may include a bottom wall comprising a hub and a ring coupled to the hub by a capacitor, wherein the hub and the ring are each electrically conductive, and where the hub has a central opening aligned with a central axis of the inductively coupled plasma apparatus; a top wall spaced apart from and above the bottom wall, wherein the top wall has a central opening aligned with the central axis, and wherein the tope wall is electrically conductive; a sidewall electrically connecting the ring to the top wall; and a tube electrically connecting the hub to the top wall, the tube having a central opening aligned with the central axis.

Abstract: A method of controlling distribution of a plasma parameter in a plasma reactor having an RF-driven electrode and two (or more) counter electrodes opposite the RF driven electrode and facing different portions of the process zones. The method includes providing two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and governing the variable reactances to change distribution of a plasma parameter such as plasma ion density or ion energy.

Abstract: Some embodiments disclose a coupling device configured to couple to a surface. The coupling device including: (a) a first housing; (b) a rotational dial with a first aperture and mechanically coupled to the first housing, the rotational dial comprising a cam mechanism adjacent to the first aperture; (c) a support base comprising a first stem with a second aperture, the first stem is located inside the first aperture, the stem having a second aperture; (d) a suction cup coupled to at least one of the rotational dial or the support base, the suction cup having: (1) a suction portion; and (2) a second stem located inside of the second aperture; and (e) an elastic mechanism located at least partially between the support base and the second stem of the suction cup. The coupling device is configured such that the suction cup can be rotated relative to at least the rotational dial to create a vacuum between the suction portion and the surface. Other embodiments are disclosed herein.

Abstract: A plasma reactor includes an RF-driven ceiling electrode overlying a process zone and two (or more) counter electrodes underlying the process zone and facing different portions of the process zones, two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and a controller governing the variable reactances to control distribution of a plasma parameter such as plasma ion density or ion energy.

Abstract: A method of controlling distribution of a plasma parameter in a plasma reactor having an RF-driven electrode and two (or more) counter electrodes opposite the RF driven electrode and facing different portions of the process zones. The method includes providing two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and governing the variable reactances to change distribution of a plasma parameter such as plasma ion density or ion energy.

Abstract: A plasma reactor includes an RF-driven wafer support electrode underlying a process zone and two (or more) counter electrodes overlying the process zone and facing different portions of the process zones, two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and a controller governing the variable reactances to control distribution of a plasma parameter such as plasma ion density or ion energy.

Abstract: The present invention provides human, humanized and/or chimeric antibodies as well as fragments, derivatives/conjugates and compositions thereof with a specific binding affinity for interleukin-18. The invention includes the use of these antibodies for diagnosing and treating diseases associated with increased IL-18 activity, the latter in the form of a pharmaceutical composition.

Abstract: An overhead RF coupling chamber couples RF power to a ceiling electrode of a plasma reactor chamber, the RF coupling chamber having a resonant annular volume defined by coaxial cylindrical conductors, one of which is coupled to an RF power source, the chamber ceiling having an annular gap around the electrode, and the resonant annular volume being aligned with the annular gap so that the resonant annular volume opens into the interior of the main chamber, thereby enhancing the electrical length of the RF coupling chamber.

Abstract: An inductively coupled plasma reactor has three concentric coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying two variable impedance elements in the current divider circuit in response to a desired current apportionment among the coil antennas received from a user interface.

Abstract: An inductively coupled plasma reactor has three concentric RF coil antennas and a current divider circuit individually controlling currents in each of the three coil antennas by varying only two reactive elements in the current divider circuit.

Abstract: A bearing component formed from a bearing steel, wherein the component has an outer surface and comprises through-hardened bainite and/or martensite and has a substantially homogeneous chemical composition, at least a part of the bearing component having a compressive residual stress profile comprising ?25 to ?1000 MPa at the near surface, wherein the near surface is defined as a region 500 microns or less below the outer surface.

Abstract: The combination of a first species which is a polyanionic compound and a second species which is an antimicrobial agent is used for the treatment of microbial biofilms and for the topical treatment of wounds. The combination may be incorporated in a wound dressing. The polyanionic compound may be a polyphosphate, such as an alkali metal polyphosphate, e.g. sodium hexametaphosphate. Examples of antimicrobial agents include metallic silver, silver compounds, iodine, PHMB (polyhexamethylene biguanide), acetic acid, chlorhexidine, aminoglycosides (e.g. amikacin, gentamicin, streptomycin and tobramycin), ansamycins, carbacephem, cephalosporins, glycopeptides (e.g. vancomycin), macrolides (eg clarithromycin), monobactams and sulfonamides).

Abstract: Some embodiments concern a holder for an electrical device. The holder can include: (a) a cover configured to couple to the electrical device, the cover having: (1) a front portion; (2) a back portion opposite the front portion; (3) one or more side portions; and (b) a holding mechanism coupled to the back portion of the cover such that the holding mechanism is rotatable at least ninety degrees relative to the back portion of the cover, the holding mechanism having: (1) a strap assembly configured to couple to the back portion of the cover; and (2) a strap configured to couple to the strap assembly. Other embodiments are disclosed.