Patents by Inventor Steven K. Grumbine

Steven K. Grumbine has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8497209
    Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radical trapping agent is a hydroxyl-substituted polyunsaturated cyclic compound, a nitrogenous compound, or a combination thereof. Optionally, the composition comprises a metal oxide abrasive (e.g., silica, alumina, titania, ceria, zirconia, or a combination of two or more of the foregoing abrasives).
    Type: Grant
    Filed: April 21, 2010
    Date of Patent: July 30, 2013
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven K. Grumbine, Renjie Zhou, Zhan Chen, Phillip W. Carter
  • Publication number: 20100200802
    Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radical trapping agent is a hydroxyl-substituted polyunsaturated cyclic compound, a nitrogenous compound, or a combination thereof. Optionally, the composition comprises a metal oxide abrasive (e.g., silica, alumina, titania, ceria, zirconia, or a combination of two or more of the foregoing abrasives).
    Type: Application
    Filed: April 21, 2010
    Publication date: August 12, 2010
    Inventors: Steven K. GRUMBINE, Renjie Zhou, Zhan Chen, Phillip W. Carter
  • Patent number: 7732393
    Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radical trapping agent is a hydroxyl-substituted polyunsaturated cyclic compound, a nitrogenous compound, or a combination thereof. Optionally, the composition comprises a metal oxide abrasive (e.g., silica, alumina, titania, ceria, zirconia, or a combination of two or more of the foregoing abrasives). The invention further provides a method of chemically-mechanically polishing a substrate with the CMP compositions, as well as a method of enhancing the shelf-life of CMP compositions containing an amine and a radical-forming oxidizing agent, in which a radical trapping agent is added to the CMP composition.
    Type: Grant
    Filed: March 20, 2006
    Date of Patent: June 8, 2010
    Assignee: Cabot Microelectronics Corporation
    Inventors: Steven K. Grumbine, Renjie Zhou, Zhan Chen, Phillip W. Carter
  • Patent number: 7501346
    Abstract: The invention provides a chemical-mechanical polishing composition comprising silica, a compound in an amount sufficient to provide about 0.2 mM to about 10 mM of a metal cation selected from the group consisting of gallium (III), chromium (II), and chromium (III), and water, wherein the polishing composition has a pH of about 1 to about 6. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.
    Type: Grant
    Filed: July 21, 2006
    Date of Patent: March 10, 2009
    Assignee: Cabot Microelectronics Corporation
    Inventor: Steven K. Grumbine
  • Patent number: 7497938
    Abstract: The invention provides a method of determining at least one electrochemical characteristic of a chemical-mechanical or electrochemical-mechanical polishing system comprising application of a potential between a polishing substrate and an electrode to generate a current, and determining the at least one electrochemical characteristic by analysis of the current as a function of time.
    Type: Grant
    Filed: March 22, 2005
    Date of Patent: March 3, 2009
    Assignee: Cabot Microelectronics Corporation
    Inventors: Jian Zhang, Steven K. Grumbine, Phillip W. Carter
  • Patent number: 7316603
    Abstract: A composition suitable for tantalum chemical-mechanical polishing (CMP) comprises an abrasive, an organic oxidizer, and a liquid carrier therefor. The organic oxidizer has a standard redox potential (E0) of not more than about 0.5 V relative to a standard hydrogen electrode. The oxidized form comprises at least one pi-conjugated ring, which includes at least one heteroatom directly attached to the ring. The heteroatom can be a N, O, S or a combination thereof. In a method embodiment, a CMP composition comprising an abrasive, and organic oxidizer having an E0 of not more than about 0.7 V relative to a standard hydrogen electrode, and a liquid carrier therefor, is utilized to polish a tantalum-containing surface of a substrate, by abrading the surface of the substrate with the composition, preferably with the aid of a polishing pad.
    Type: Grant
    Filed: September 26, 2005
    Date of Patent: January 8, 2008
    Assignee: Cabot Microelectronics Corporation
    Inventors: Phillip W. Carter, Jian Zhang, Steven K. Grumbine, Francesco De Rege Thesauro
  • Patent number: 7311856
    Abstract: The invention provides a chemical-mechanical polishing system comprising a polishing component, a surfactant, and a liquid carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the polishing system.
    Type: Grant
    Filed: March 30, 2005
    Date of Patent: December 25, 2007
    Assignee: Cabot Microelectronics Corporation
    Inventors: Renjie Zhou, Steven K. Grumbine, Jian Zhang, Isaac K. Cherian
  • Patent number: 7093722
    Abstract: The invention provides devices and methods for removing and trapping large and/or dense abrasive particles from a polishing slurry. The polishing slurry is introduced into a container and allowed to stagnate, thereby causing large and/or dense particles to separate from the slurry under the influence of gravity. The container includes a cavity or plurality of cavities defined by an inner surface of the container into which the separated particles sink. To prevent the large and/or dense particles from becoming re-suspended into the slurry, the size and shape of the cavity is relatively deep and narrow with respect to the large and/or dense particles, thus providing a trapping effect. The cavities do not effectively trap the smaller particles.
    Type: Grant
    Filed: November 20, 2002
    Date of Patent: August 22, 2006
    Assignee: Cabot Microelectronics Corporation
    Inventor: Steven K Grumbine
  • Patent number: 7087187
    Abstract: Using coated carbon black particles, coated with a selected coating material, as an abrasive in slurries or polishing pads for chemical-mechanical polishing processes. By adjusting the coating material on the carbon black particles, new abrasive particles for chemical-mechanical polishing are created with tailored performance properties.
    Type: Grant
    Filed: June 6, 2002
    Date of Patent: August 8, 2006
    Inventor: Steven K. Grumbine
  • Patent number: 7001253
    Abstract: The invention provides a chemical-mechanical polishing system comprising an abrasive, a carrier, and either boric acid, or a conjugate base thereof, wherein the boric acid and conjugate base are not present together in the polishing system in a sufficient amount to act as a pH buffer, or a water-soluble boron-containing compound, or salt thereof, that is not boric acid, and a method of polishing a substrate using the chemical-mechanical polishing system.
    Type: Grant
    Filed: March 16, 2004
    Date of Patent: February 21, 2006
    Assignee: Cabot Microelectronics Corporation
    Inventors: Renjie Zhou, Steven K. Grumbine, Issac K. Cherian
  • Patent number: 6867140
    Abstract: The invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) contacting the first metal layer with a polishing system comprising a liquid carrier, at least one oxidizing agent, at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, wherein the stopping compound is a cationically charged nitrogen containing compound selected from compounds comprising amines, imines, amides, imides, and mixtures thereof, and a polishing pad and/or an abrasive, and (ii) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate.
    Type: Grant
    Filed: January 29, 2003
    Date of Patent: March 15, 2005
    Assignee: Cabot Microelectronics Corporation
    Inventors: Shumin Wang, Vlasta Brusic Kaufman, Steven K. Grumbine, Isaac K. Cherian
  • Patent number: 6855266
    Abstract: The invention provides a system for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, and (v) a polishing pad and/or an abrasive. The invention also provides a composition comprising (i) a liquid carrier, (ii) at least one oxidizing agent, (iii) at least one polishing additive (iv) at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, to be used with (v) a polishing pad and/or an abrasive.
    Type: Grant
    Filed: August 10, 2000
    Date of Patent: February 15, 2005
    Assignee: Cabot Microelectronics Corporation
    Inventors: Shumin Wang, Vlasta Brusic Kaufman, Steven K. Grumbine, Isaac K. Cherian
  • Patent number: 6852632
    Abstract: The invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) contacting the first metal layer with a polishing system comprising a liquid carrier, at least one oxidizing agent, at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, wherein the polishing additive is selected from the group consisting of pyrophosphates, condensed phosphates, phosphonic acids and salts thereof, amines, amino alcohols, amides, imines, imino acids, nitriles, nitros, thiols thioesters, thioethers, carbothiolic acids, carbothionic acids, thiocarboxylic acids, thiosalicylic acids, and mixtures thereof, and a polishing pad and/or an abrasive, and (ii) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate.
    Type: Grant
    Filed: January 29, 2003
    Date of Patent: February 8, 2005
    Assignee: Cabot Microelectronics Corporation
    Inventors: Shumin Wang, Vlasta Brusic Kaufman, Steven K. Grumbine, Isaac K. Cherian, Renjie Zhou
  • Patent number: 6830503
    Abstract: The invention is directed to a method of polishing a substrate comprising (i) providing a substrate comprising an organic polymer film, (ii) contacting the substrate with a chemical-mechanical polishing system comprising a liquid carrier, an abrasive and/or polishing pad, a peroxy-type oxidizer, and a metal compound with two or more oxidation states, wherein the metal compound is soluble in the liquid carrier, and (iii) abrading at least a portion of the substrate to polish the substrate.
    Type: Grant
    Filed: February 18, 2003
    Date of Patent: December 14, 2004
    Assignee: Cabot Microelectronics Corporation
    Inventor: Steven K. Grumbine
  • Publication number: 20040214443
    Abstract: Polishing compositions comprising at least one soluble silane compound and at least one abrasive that are useful for polishing substrate surface features.
    Type: Application
    Filed: October 22, 2003
    Publication date: October 28, 2004
    Applicant: Cabot Microelectronics Corporation
    Inventors: Steven K. Grumbine, Shumin Wang
  • Patent number: 6767476
    Abstract: Chemical mechanical polishing compositions and slurries comprising a film-forming agent and at least one silane compound wherein the compositions are useful for polishing substrate features such as copper, tantalum, and tantalum nitride features.
    Type: Grant
    Filed: April 21, 2003
    Date of Patent: July 27, 2004
    Assignee: Cabot Microelectronics Corporation
    Inventors: Shumin Wang, Steven K. Grumbine, Christopher C. Streinz, Eric W. G. Hoglund
  • Publication number: 20040094489
    Abstract: The invention provides devices and methods for removing and trapping large and/or dense abrasive particles from a polishing slurry. The polishing slurry is introduced into a container and allowed to stagnate, thereby causing large and/or dense particles to separate from the slurry under the influence of gravity. The container includes a cavity or plurality of cavities defined by an inner surface of the container into which the separated particles sink. To prevent the large and/or dense particles from becoming re-suspended into the slurry, the size and shape of the cavity is relatively deep and narrow with respect to the large and/or dense particles, thus providing a trapping effect. The cavities do not effectively trap the smaller particles.
    Type: Application
    Filed: November 20, 2002
    Publication date: May 20, 2004
    Applicant: Cabot Microelectronics Corporation
    Inventor: Steven K. Grumbine
  • Patent number: 6705926
    Abstract: The invention provides a chemical-mechanical polishing system comprising an abrasive, a carrier, and either boric acid, or a conjugate base thereof, wherein the boric acid and conjugate base are not present together in the polishing system in a sufficient amount to act as a pH buffer, or a water-soluble boron-containing compound, or salt thereof, that is not boric acid, and a method of polishing a substrate using the chemical-mechanical polishing system.
    Type: Grant
    Filed: October 24, 2001
    Date of Patent: March 16, 2004
    Assignee: Cabot Microelectronics Corporation
    Inventors: Renjie Zhou, Steven K. Grumbine, Isaac K. Cherian
  • Patent number: 6685540
    Abstract: The invention provides a polishing pad comprising composite particles that comprise a solid core encapsulated by a polymeric shell material, wherein the solid core comprises a material that differs from the polymeric shell material, as well as a method of polishing a substrate with such a polishing pad.
    Type: Grant
    Filed: November 27, 2001
    Date of Patent: February 3, 2004
    Assignee: Cabot Microelectronics Corporation
    Inventors: Isaac K. Cherian, Sriram P. Anjur, Steven K. Grumbine
  • Publication number: 20040007690
    Abstract: Methods for controllably polishing fiber optic connectors that include a ferrule enclosing single or multiple optical fibers by manipulating the ingredients of the polishing composition to control the relative polishing rates of the ferrule material and the optical fiber material to obtain the desired connector end face surface finish and geometry.
    Type: Application
    Filed: July 12, 2002
    Publication date: January 15, 2004
    Applicant: Cabot Microelectronics Corp.
    Inventors: Gary W. Snider, J. Scott Steckenrider, Steven K. Grumbine