Abstract: The present invention provides medium compositions and methods for the regeneration of the whole plant from explants obtained from plants belonging to the Malvaceae family, particularly the Abelmoschus genus, more preferably Abelmoschus esculentus L, through somatic embryogenesis. The present invention also provides an efficient methodology for genetic transformation of plants belonging to the Malvaceae family through somatic embryogenesis in semisolid culture with the use of the Agrobacterium. The present invention is also related to a method for the development of virus-resistant transgenic plants belonging to the Malvaceae family.

Abstract: The present invention provides medium compositions and methods for the regeneration of the whole plant from explants obtained from plants belonging to the Malvaceae family, particularly the Abelmoschus genus, more preferably Abelmoschus esculentus L, through somatic embryogenesis. The present invention also provides an efficient methodology for genetic transformation of plants belonging to the Malvaceae family through somatic embryogenesis in semisolid culture with the use of the Agrobacterium. The present invention is also related to a method for the development of virus-resistant transgenic plants belonging to the Malvaceae family.

Abstract: The present invention provides medium compositions and methods for the regeneration of the whole plant from explants obtained from plants belonging to the Malvaceae family, particularly the Abelmoschus genus, more preferably Abelmoschus esculentus L, through somatic embryogenesis. The present invention also provides an efficient methodology for genetic transformation of plants belonging to the Malvaceae family through somatic embryogenesis in semisolid culture with the use of the Agrobacterium. The present invention is also related to a method for the development of virus-resistant transgenic plants belonging to the Malvaceae family.

Abstract: A method for producing an organic semiconductor device (110) having at least one organic semiconducting material (122) and at least two electrodes (114) adapted to support an electric charge carrier transport through the organic semiconducting material (122) is disclosed. The organic semiconducting material (122) intrinsically has ambipolar semiconducting properties. The method comprises at least one step of generating at least one intermediate layer (120) which at least partially is interposed between the organic semiconducting material (122) and at least one of the electrodes (114) of the organic semiconductor device (110). The intermediate layer (120) comprises at least one thiol compound having the general formula HS—R, wherein R is an organic residue. The thiol compound has an electric dipole moment pointing away from the SH-group of the thiol compound. The electric dipole moment has at least the same magnitude as the electric dipole moment in 4-Phenylthiophenol.

Abstract: The present invention provides medium compositions and methods for the regeneration of the whole plant from explants obtained from plants belonging to the Malvaceae family, particularly the Abelmoschus genus, more preferably Abelmoschus esculentus L, through somatic embryogenesis. The present invention also provides an efficient methodology for genetic transformation of plants belonging to the Malvaceae family through somatic embryogenesis in semisolid culture with the use of the Agrobacterium. The present invention is also related to a method for the development of virus-resistant transgenic plants belonging to the Malvaceae family.

Abstract: Disclosed herein are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic ?-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present disclosure can possess certain processing advantages such as improved solution-processability and low annealing temperature.

Abstract: The present invention provides semiconducting compounds, oligomers and polymers of formula wherein A1 and A2 can be the same or different and are S or Se, E is selected from the group consisting of The compounds, oligomers and polymers of formula of formula (1) are suitable for use in electronic devices such as organic field effect transistors.

Abstract: An organic semiconductor device selected from organic diodes, organic field effect transistors, and devices comprising an organic diode and/or organic field effect transistor and a method of producing such a device are provided. The organic semiconductor device comprises at least one semiconducting layer based on a diketopyrrolopyrrole (DPP) polymer. The semiconducting layer may effectively be protected against degradation by radiation and/or oxidation by adding at least one stabilizing agent selected from hydroxybenzophenones, hydroxyphenyl benzotriazoles, oxalic acid anilides, hydroxyphenyl triazines, hindered phenols and/or merocyanines to the DPP polymer layer. The stabilization is effective both during production and during usage of the device, while the device's electronic properties are retained. The stabilizing agent is preferably a UV absorbing agent or an antioxidant or anti-radical agent known from the field of organic polymer technology.

Abstract: Disclosed herein are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic ?-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present disclosure can possess certain processing advantages such as improved solution-processability and low annealing temperature.

Abstract: Disclosed are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic ?-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as improved solution-processability and low annealing temperature.

Abstract: Disclosed are new semiconductor materials prepared from rylene-(?-acceptor) copolymers. Such copolymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.

Abstract: The present invention provides semiconducting compounds, oligomers and polymers of formula wherein A1 and A2 can be the same or different and are S or Se, E is selected from the group consisting of The compounds, oligomers and polymers of formula of formula (1) are suitable for use in electronic devices such as organic field effect transistors.

Abstract: The invention concerns apolymer of the formula (I): wherein: M1 is an optionally substituted dithienophthalimide formula (II): wherein: X is N or C—R, wherein R is H or a C1-C40 alkyl group, R2, at each occurrence, is independently selected from H, a C1-40 alkyl group, a C2-40 alkenyl group, a C1-40 haloalkyl group, and a monocyclicor polycyclic moiety, wherein: each of the C1-40 alkyl group, the C2-40 alkenyl group, and the C1-40 haloalkyl group can be optionally substituted with 1-10 substituents independently selected from a halogen, CN, —NO2, OH, NH2, —NH(C1-20 alkyl), N(C1-20 alkyl)2, —S(O)2OH, —CHO, —C(O)—C1-20 alkyl, —C(O)OH, —C(O)—OC1-20 alkyl, —C(O)NH2, —C(O)NH—C1-20 alkyl, —C(O)N(C1-20 alkyl)2, —OC1-20 alkyl, —SiH3, —SiH(C1-20 alkyl)2, —SiH2(C1-20 alkyl), and —Si(C1-20 alkyl)3; and the monocyclic or polycyclic moiety can be covalently bonded to the imide nitrogen via an optional linker, and can be optionally substituted with 1-5 substituentsindependently selected from a halogen, oxo, —CN, —NO2, OH,

Abstract: An organic semiconductor device selected from organic diodes, organic field effect transistors, and devices comprising an organic diode and/or organic field effect transistor and a method of producing such a device are provided. The organic semiconductor device comprises at least one semiconducting layer based on a diketopyrrolopyrrole (DPP) polymer. The semiconducting layer may effectively be protected against degradation by radiation and/or oxidation by adding at least one stabilizing agent selected from hydroxybenzophenones, hydroxyphenyl benzotriazoles, oxalic acid anilides, hydroxyphenyl triazines, hindered phenols and/or merocyanines to the DPP polymer layer. The stabilization is effective both during production and during usage of the device, while the device's electronic properties are retained. The stabilizing agent is preferably a UV absorbing agent or an antioxidant or anti-radical agent known from the field of organic polymer technology.

Abstract: A method includes combining organic semiconductor molecules and plasticizer molecules to form over a substrate a solid organic semiconductor channel. The channel may comprise at least about 50% by weight of the plasticizer molecules.

Abstract: The invention concerns apolymer of the formula (I): wherein: M1 is an optionally substituted dithienophthalimide formula (II): wherein: X is N or C—R, wherein R is H or a C1-C40 alkyl group, R2, at each occurrence, is independently selected from H, a C1-40 alkyl group, a C2-40 alkenyl group, a C1-40 haloalkyl group, and a monocyclicor polycyclic moiety, wherein: each of the C1-40 alkyl group, the C2-40 alkenyl group, and the C1-40 haloalkyl group can be optionally substituted with 1-10 substituents independently selected from a halogen, CN, —NO2, OH, NH2, —NH(C1-20 alkyl), N(C1-20 alkyl)2, —S(O)2OH, —CHO, —C(O)—C1-20 alkyl, —C(O)OH, —C(O)—OC1-20 alkyl, —C(O)NH2, —C(O)NH—C1-20 alkyl, —C(O)N(C1-20 alkyl)2, —OC1-20 alkyl, —SiH3, —SiH(C1-20 alkyl)2, —SiH2(C1-20 alkyl), and —Si(C1-20 alkyl)3; and the monocyclic or polycyclic moiety can be covalently bonded to the imide nitrogen via an optional linker, and can be optionally substituted with 1-5 substituentsindependently selected from a halogen, oxo, —CN, —NO2, OH,

Abstract: A method for producing an organic semiconductor device (110) having at least one organic semiconducting material (122) and at least two electrodes (114) adapted to support an electric charge carrier transport through the organic semiconducting material (122) is disclosed. The organic semiconducting material (122) intrinsically has ambipolar semiconducting properties. The method comprises at least one step of generating at least one intermediate layer (120) which at least partially is interposed between the organic semiconducting material (122) and at least one of the electrodes (114) of the organic semiconductor device (110). The intermediate layer (120) comprises at least one thiol compound having the general formula HS—R, wherein R is an organic residue. The thiol compound has an electric dipole moment pointing away from the SH-group of the thiol compound. The electric dipole moment has at least the same magnitude as the electric dipole moment in 4-Phenylthiophenol.

Abstract: A polymer comprising repeating units A and optionally repeating units B wherein Z=S, Se, N—R and O; W is at each occurrence independently a monocyclic or polycylic moiety optionally substituted with 1-4 Ra groups; Y, at each occurrence, is independently a divalent C1-6 alkyl group, a divalent C1-6 haloalkyl group, or a covalent bond; c is from 1 to 6.

Abstract: The present invention provides semiconducting compounds, oligomers and polymers of formula wherein A1 and A2 can be the same or different and are S or Se, E is selected from the group consisting of The compounds, oligomers and polymers of formula of formula (1) are suitable for use in electronic devices such as organic field effect transistors.

Abstract: A method of fabricating a circuit includes chemically bonding a coating to a plurality of nanoparticles. The nanoparticles are dispersed in a medium comprising organic molecules. An organic semiconductor channel is formed that comprises the medium. A plurality of electrodes is formed over the substrate. The electrodes are located to function as two of a gate electrode, a drain electrode, and a source electrode of a field-effect transistor.