Patents by Inventor Suhyueon PARK

Suhyueon PARK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices including source/drain regions having antimony doped layers
    Patent number: 11682698
    Abstract: A semiconductor device including an active region protruding from an upper surface of a substrate and extending in a first horizontal direction, at least two gate electrodes extending in a second horizontal direction and crossing the active region, the second horizontal direction crossing the first horizontal direction, a source/drain region in the active region between the gate electrodes may be provided. The source/drain region includes a recess region, an outer doped layer on an inner wall of the recess region, an intermediate doped layer on the outer doped layer, and an inner doped layer on the intermediate doped layer and filling the recess region. One of the outer doped layer or the intermediate doped layer includes antimony, and the inner doped layer includes phosphorous.
    Type: Grant
    Filed: December 3, 2021
    Date of Patent: June 20, 2023
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Junghan Lee, Changhee Kim, Kihwan Kim, Suhyueon Park, Jaehong Choi
  • SEMICONDUCTOR DEVICES INCLUDING SOURCE/DRAIN REGIONS HAVING ANTIMONY DOPED LAYERS
    Publication number: 20220093739
    Abstract: A semiconductor device including an active region protruding from an upper surface of a substrate and extending in a first horizontal direction, at least two gate electrodes extending in a second horizontal direction and crossing the active region, the second horizontal direction crossing the first horizontal direction, a source/drain region in the active region between the gate electrodes may be provided. The source/drain region includes a recess region, an outer doped layer on an inner wall of the recess region, an intermediate doped layer on the outer doped layer, and an inner doped layer on the intermediate doped layer and filling the recess region. One of the outer doped layer or the intermediate doped layer includes antimony, and the inner doped layer includes phosphorous.
    Type: Application
    Filed: December 3, 2021
    Publication date: March 24, 2022
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Junghan LEE, Changhee KIM, Kihwan KIM, Suhyueon PARK, Jaehong CHOI
  • Semiconductor devices including source/drain regions having antimony doped layer
    Patent number: 11211454
    Abstract: A semiconductor device including an active region protruding from an upper surface of a substrate and extending in a first horizontal direction, at least two gate electrodes extending in a second horizontal direction and crossing the active region, the second horizontal direction crossing the first horizontal direction, a source/drain region in the active region between the gate electrodes may be provided. The source/drain region includes a recess region, an outer doped layer on an inner wall of the recess region, an intermediate doped layer on the outer doped layer, and an inner doped layer on the intermediate doped layer and filling the recess region. One of the outer doped layer or the intermediate doped layer includes antimony, and the inner doped layer includes phosphorous.
    Type: Grant
    Filed: March 17, 2020
    Date of Patent: December 28, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Junghan Lee, Changhee Kim, Kihwan Kim, Suhyueon Park, Jaehong Choi
  • SEMICONDUCTOR DEVICES INCLUDING SOURCE/DRAIN REGIONS HAVING ANTIMONY DOPED LAYER
    Publication number: 20210066455
    Abstract: A semiconductor device including an active region protruding from an upper surface of a substrate and extending in a first horizontal direction, at least two gate electrodes extending in a second horizontal direction and crossing the active region, the second horizontal direction crossing the first horizontal direction, a source/drain region in the active region between the gate electrodes may be provided. The source/drain region includes a recess region, an outer doped layer on an inner wall of the recess region, an intermediate doped layer on the outer doped layer, and an inner doped layer on the intermediate doped layer and filling the recess region. One of the outer doped layer or the intermediate doped layer includes antimony, and the inner doped layer includes phosphorous.
    Type: Application
    Filed: March 17, 2020
    Publication date: March 4, 2021
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Junghan LEE, Changhee KIM, Kihwan KIM, Suhyueon PARK, Jaehong CHOI