Abstract: Examples include techniques to access or operate a dual in-line memory module (DIMM) via one or multiple data channels. In some examples, memory devices at or on the DIMM may be accessed via one or more data channels. The one or more data channels arranged such that the DIMM is configured to operate in a dual channel mode that includes two data channels or to operate in a single channel mode that includes a single data channel.

Abstract: Examples include techniques to access or operate a dual in-line memory module (DIMM) via one or multiple data channels. In some examples, memory devices at or on the DIMM may be accessed via one or more data channels. The one or more data channels arranged such that the DIMM is configured to operate in a dual channel mode that includes two data channels or to operate in a single channel mode that includes a single data channel.

Abstract: A computing system is described. The computing system includes a memory controller having a double data rate memory interface. The double data rate memory interface has a first memory channel interface and a second memory channel interface. The computing system also includes a first DIMM slot and a second DIMM slot. The computing system also includes a first memory channel coupled to the first memory channel interface and the first DIMM slot, wherein the first memory channel's CA and DQ wires are not coupled to the second DIMM slot. The computing system also includes a second memory channel coupled to the second memory channel interface and the second DIMM slot, wherein the second memory channel's CA and DQ wires are not coupled to the first DIMM slot. The computing system also includes a back end memory channel that is coupled to the first and second DIMM slots.

Abstract: Examples include techniques to access or operate a dual in-line memory module (DIMM) via one or multiple data channels. In some examples, memory devices at or on the DIMM may be accessed via one or more data channels. The one or more data channels arranged such that the DIMM is configured to operate in a dual channel mode that includes two data channels or to operate in a single channel mode that includes a single data channel.

Abstract: A memory subsystem includes a group of memory devices connected to an address bus. The memory subsystem includes logic to uniquely map a physical address of a memory access command to each memory device of the group. Thus, each physical address sent by an associated memory controller uniquely accesses a different row of each memory device, instead of being mapped to the same or corresponding row of each memory device.

Abstract: Apparatus, systems, and methods to manage memory refresh operations are described. In one embodiment, an electronic device comprises a processor and memory controller logic to determine a memory refresh frequency for a memory system and transmit refresh commands to a refresh control logic in at least one memory bank coupled to the memory controller according to the memory refresh frequency. Other embodiments are also disclosed and claimed.

Abstract: Examples are disclosed for determining a logical address of one or more victim rows of a volatile memory based on a logical address of an aggressor row and address translation schemes associated with the volatile memory. Other examples are described and claimed.

Abstract: Examples include techniques to access or operate a dual in-line memory module (DIMM) via one or multiple data channels. In some examples, memory devices at or on the DIMM may be accessed via one or more data channels. The one or more data channels arranged such that the DIMM is configured to operate in a dual channel mode that includes two data channels or to operate in a single channel mode that includes a single data channel.

Abstract: Apparatus, systems, and methods to manage memory refresh operations are described. In one embodiment, an electronic device comprises a processor and memory controller logic to determine a memory refresh frequency for a memory system and transmit refresh commands to a refresh control logic in at least one memory bank coupled to the memory controller according to the memory refresh frequency. Other embodiments are also disclosed and claimed.

Abstract: A register not connected to a data bus is read by transferring data across an address bus to a device connected to the data bus, from which the data is read by a device connected to the data bus. The register resides in a register device connected via the address bus to a memory device that is connected to both the address bus and the data bus. A host processor triggers the register device to transfer information over the address bus to a register on the memory device. The host processor then reads the information from the register of the memory device.

Abstract: A register not connected to a data bus is read by transferring data across an address bus to a device connected to the data bus, from which the data is read by a device connected to the data bus. The register resides in a register device connected via the address bus to a memory device that is connected to both the address bus and the data bus. A host processor triggers the register device to transfer information over the address bus to a register on the memory device. The host processor then reads the information from the register of the memory device.

Abstract: A register not connected to a data bus is read by transferring data across an address bus to a device connected to the data bus, from which the data is read by a device connected to the data bus. The register resides in a register device connected via the address bus to a memory device that is connected to both the address bus and the data bus. A host processor triggers the register device to transfer information over the address bus to a register on the memory device. The host processor then reads the information from the register of the memory device.

Abstract: Examples are disclosed for determining a logical address of one or more victim rows of a volatile memory based on a logical address of an aggressor row and address translation schemes associated with the volatile memory. Other examples are described and claimed.

Abstract: Apparatus, systems, and methods to manage memory refresh operations are described. In one embodiment, an electronic device comprises a processor and memory controller logic to determine a memory refresh frequency for a memory system and transmit refresh commands to a refresh control logic in at least one memory bank coupled to the memory controller according to the memory refresh frequency. Other embodiments are also disclosed and claimed.

Abstract: Examples are disclosed for determining a logical address of one or more victim rows of a volatile memory based on a logical address of an aggressor row and address translation schemes associated with the volatile memory. Other examples are described and claimed.

Abstract: Embodiments of apparatus, methods, systems, computer-readable storage media and devices are described herein for determining an error category for a detected error in data read from a volatile memory; and selectively performing or causing an additional remedial action based at least in part on the error category determined. In various embodiments, the determining and the performing or causing may be undertaken in response to the correcting. The memory may be volatile or non-volatile memory. Other embodiments may be described and/or claimed.

Abstract: A memory controller to implement targeted refreshes of potential victim rows of a row hammer event. In an embodiment, the memory controller receives an indication that a specific row of a memory device is experiencing repeated accesses which threaten the integrity of data in one or more victim rows physically adjacent to the specific row. The memory controller accesses default offset information in the absence of address map information which specifies an offset between physically adjacent rows of the memory device. In another embodiment, the memory controller determines addresses for potential victim rows based on the default offset information. In response to the received indication of the row hammer event, the memory controller sends for each of the determined plurality of addresses a respective command to the memory device, where the commands are for the memory device to perform targeted refreshes of potential victim rows.

Abstract: A register not connected to a data bus is read by transferring data across an address bus to a device connected to the data bus, from which the data is read by a device connected to the data bus. The register resides in a register device connected via the address bus to a memory device that is connected to both the address bus and the data bus. A host processor triggers the register device to transfer information over the address bus to a register on the memory device. The host processor then reads the information from the register of the memory device.

Abstract: A memory subsystem includes a group of memory devices connected to an address bus. The memory subsystem includes logic to uniquely map a physical address of a memory access command to each memory device of the group. Thus, each physical address sent by an associated memory controller uniquely accesses a different row of each memory device, instead of being mapped to the same or corresponding row of each memory device.

Abstract: A register not connected to a data bus is read by transferring data across an address bus to a device connected to the data bus, from which the data is read by a device connected to the data bus. The register resides in a register device connected via the address bus to a memory device that is connected to both the address bus and the data bus. A host processor triggers the register device to transfer information over the address bus to a register on the memory device. The host processor then reads the information from the register of the memory device.