Abstract: A complementary thin film transistor (TFT) includes a substrate and a first TFT and a second TFT disposed on the substrate, wherein a first conductive semiconductor layer of the first TFT and a second gate electrode layer of the second TFT are disposed in the same layer and include the same material.

Abstract: A variable capacity rotary compressor including a hermetic casing in which a housing having first and second compression chambers is installed. A compressing unit is placed in the first and second compression chambers, and is operated to execute a compression operation in either the first or second compression chamber according to a rotating direction of a rotating shaft which drives the compressing unit. The variable capacity rotary compressor also includes a first path, a second path, and a pressure control unit. The first path connects an outlet side of the rotary compressor to an inlet of the first compression chamber. The second path connects the outlet side of the rotary compressor to an inlet of the second compression chamber. The pressure controller functions to open either the first or second path, so that a pressure of the outlet side of the rotary compressor acts on the inlet of the first or second compression chamber where the idle operation is executed.