Patents by Inventor Sung-Hyuk CHO

Sung-Hyuk CHO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9520459
    Abstract: A surface treatment method for a semiconductor device includes providing a substrate where a plurality of projected patterns are formed, forming a hydrophobic coating layer on a surface of each of the plurality of projected patterns, rinsing the substrate with deionized water, and drying the substrate, wherein the hydrophobic coating layer is formed using a coating agent that includes phosphate having more than one hydrocarbon group, phosphonate having more than one hydrocarbon group, or a mixture thereof.
    Type: Grant
    Filed: February 19, 2016
    Date of Patent: December 13, 2016
    Assignee: SK Hynix Inc.
    Inventors: Sung-Hyuk Cho, Hyo-Sang Kang, Sung-Ki Park, Kwon Hong, Hyung-Soon Park, Hyung-Hwan Kim, Young-Bang Lee, Ji-Hye Han, Tae-Yeon Jung, Hyeong-Jin Nor
  • Publication number: 20160172433
    Abstract: A surface treatment method for a semiconductor device includes providing a substrate where a plurality of projected patterns are formed, forming a hydrophobic coating layer on a surface of each of the plurality of projected patterns, rinsing the substrate with deionized water, and drying the substrate, wherein the hydrophobic coating layer is formed using a coating agent that includes phosphate having more than one hydrocarbon group, phosphonate having more than one hydrocarbon group, or a mixture thereof.
    Type: Application
    Filed: February 19, 2016
    Publication date: June 16, 2016
    Inventors: Sung-Hyuk CHO, Hyo-Sang KANG, Sung-Ki PARK, Kwon HONG, Hyung-Soon PARK, Hyung-Hwan KIM, Young-Bang LEE, Ji-Hye HAN, Tae-Yeon JUNG, Hyeong-Jin NOR
  • Patent number: 8821752
    Abstract: The present invention provides an etching composition, comprising a silyl phosphate compound, phosphoric acid and deionized water, and a method for fabricating a semiconductor, which includes an etching process employing the etching composition. The etching composition of the invention shows a high etching selectivity for a nitride film with respect to an oxide film. Thus, when the etching composition of the present invention is used to remove a nitride film, the effective field oxide height (EEH) may be easily controlled by controlling the etch rate of the oxide film. In addition, the deterioration in electrical characteristics caused by damage to an oxide film or etching of the oxide film may be prevented, and particle generation may be prevented, thereby ensuring the stability and reliability of the etching process.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: September 2, 2014
    Assignees: SK Hynix Inc., Soulbrain Co., Ltd.
    Inventors: Sung-Hyuk Cho, Kwon Hong, Hyung-Soon Park, Gyu-Hyun Kim, Ji-Hye Han, Jung-Hun Lim, Jin-Uk Lee, Jae-Wan Park, Chan-Keun Jung
  • Publication number: 20140179118
    Abstract: A surface treatment method for a semiconductor device includes providing a substrate where a plurality of projected patterns are formed, forming a hydrophobic coating layer on a surface of each of the plurality of projected patterns, rinsing the substrate with deionized water, and drying the substrate, wherein the hydrophobic coating layer is formed using a coating agent that includes phosphate having more than one hydrocarbon group, phosphonate having more than one hydrocarbon group, or a mixture thereof.
    Type: Application
    Filed: March 15, 2013
    Publication date: June 26, 2014
    Applicant: SK hynix Inc.
    Inventors: Sung-Hyuk CHO, Hyo-Sang KANG, Sung-Ki PARK, Kwon HONG, Hyung-Soon PARK, Hyung-Hwan KIM, Young-Bang LEE, Ji-Hye HAN, Tae-Yeon JUNG, Hyeong-Jin NOR