Abstract: Disclosed are a system and method for automatically evaluating an essay. The system includes a structure analysis module configured to divide learning data and learner essay text in a predetermined structure analysis unit, generate structure tagging information for each structure analysis unit, and structure the learning data and the learner essay text by attaching the structure tagging information to the learning data and the learner essay text, a learning module configured to generate an essay evaluation model through learning by using essay text that is included in the structured learning data and the structure tagging information as an input value and using an evaluation score that is included in the structured learning data as a label, and an evaluation module configured to generate essay evaluation results using the essay evaluation model.

Abstract: A thin film transistor array substrate including a substrate including an active area and a non-active area, and a first thin film transistor disposed on the substrate while including a first oxide semiconductor pattern, a first gate electrode overlapping with the first oxide semiconductor pattern, a first gate insulating layer interposed between the first oxide semiconductor pattern and the first gate electrode, a first source electrode and a first drain electrode disposed on and connected to the first oxide semiconductor pattern, and a first light shielding pattern disposed under the first oxide semiconductor pattern and electrically connected to one of the first source electrode and the first drain electrodes. The first gate electrode includes a first portion maintaining a first parasitic capacitance and a second portion maintaining a second parasitic capacitance smaller than the first parasitic capacitance, together with the first oxide semiconductor pattern.

Abstract: A ceramic electronic component includes a body including a dielectric layer and an internal electrode, and an external electrode disposed on the body and connected to the internal electrode. The dielectric layer includes a plurality of dielectric grains, and at least one of the plurality of dielectric grains has a core-dual shell structure having a core and a dual shell. The dual shell includes a first shell surrounding at least a portion of the core, and a second shell surrounding at least a portion of the first shell, and a concentration of a rare earth element included in the second shell is more than 1.3 times to less than 3.8 times a concentration of a rare earth element included in the first shell.

Abstract: The present invention is directed to novel heterodimeric antibodies.

Abstract: A semiconductor memory device includes; a first stacked structure including a first staircase portion, a second stacked structure on the first stacked structure and including a second staircase portion overlapping the first staircase portion, a first contact plug penetrating the first stacked structure and the second stacked structure, electrically connected to the first stacked structure and not electrically connected to the second stacked structure, and a second contact plug penetrating the first stacked structure and the second stacked structure, electrically connected to the second stacked structure and not electrically connected to the first stacked structure.

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

Abstract: A fuser includes a pressure roller to rotate, a heating belt to form a fixing nip with the pressure roller; and bushings at each end of the heating belt, respectively, to support the heating belt. Each of the bushings includes a side wall outside the each end of the heating belt, and a support member in a direction toward the heating belt with respect to the side wall to support an inner surface of the heating belt, where the support member includes a protruding region downwardly inclined in a direction toward the side wall.

Abstract: The present invention is directed to novel heterodimeric antibodies.

Abstract: The present invention is directed to novel heterodimeric antibodies.

Abstract: Provided herein are novel CLDN6 binding domains, and anti-CLDN6×anti-CD3 antibodies that include such CLDN6 binding domains. Also provided herein are methods of using such antibodies for the treatment of CLDN6-associated cancers.

Abstract: A semiconductor device includes a first substrate including a cell region and surrounded by an extension region, a common source plate on the first substrate, a supporter on the common source plate, a first stack structure on the supporter and including an alternately stacked first insulating film and first gate electrode, a channel hole penetrating the first stack structure, the supporter, and the common source plate on the cell region, and an electrode isolation trench spaced apart from the channel hole in a first direction on the cell region, extending in a second direction, and penetrating the first stack structure, the supporter, and the common source plate, wherein a first thickness of the supporter in a first region adjacent to the electrode isolation trench is greater than a second thickness of the supporter in a second region formed between the electrode isolation trench and the channel hole.

Abstract: The present invention is directed to antibodies, including novel antigen binding domains and heterodimeric antibodies, that bind Ectonucleotide pyrophosphatase/phosphodiesterase family member 3 (ENPP3).

Abstract: The present invention is directed to novel heterodimeric antibodies.

Abstract: Provided herein are IL18-Fc fusion proteins that include an empty-Fc domain and an IL18 protein connected to another Fc domain. Also provided herein are additional are IL18-Fc fusion proteins such as IL18 x Fab-Fc fusion proteins that include a first monomer containing an IL18 protein connected to a first Fc domain, a second monomer containing a variable heavy chain connected to a second Fc domain, and a variable light chain, such that the variable heavy and light chains form an empty Fab. Various variant IL18 proteins with modifications to reduce heterogeneity and/or reduce affinity/potency and/or improve stability and/or improve production yield are also described.

Abstract: Provided herein are trispecific antibodies that include a) a first monomer, b) a second monomer, and c) a light chain. The first monomer includes a first variant Fc domain and a variable heavy domain, the second monomer includes a second variant Fc domain and a first scFv domain and the light chain includes a variable light domain. The variable heavy domain and the variable light domain form an antigen binding domain. The trispecific antibody further includes a second scFv domain on either the first or second monomers.

Abstract: The present invention is directed to antibodies, including novel antigen binding domains and heterodimeric antibodies, that bind Ectonucleotide pyrophosphatase/phosphodiesterase family member 3 (ENPP3).

Abstract: Provided herein are novel CLDN6 binding domains, and anti-CLDN6×anti-CD3 antibodies that include such CLDN6 binding domains. Also provided herein are methods of using such antibodies for the treatment of CLDN6-associated cancers.

Abstract: The present invention is directed to antibodies, including novel antigen binding domains and heterodimeric antibodies, that bind somatostatin receptor 2 (SSTR2)

Abstract: The present invention is directed to novel heterodimeric antibodies.

Abstract: The present invention is directed to novel heterodimeric antibodies.