Patents by Inventor Sung-Min Kim

Sung-Min Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11225050
    Abstract: Disclosed is a steel sheet for hot press forming, which includes: a base steel sheet; and a plating layer disposed on the base steel sheet and including a diffusion layer and a surface layer that are sequentially laminated, wherein the diffusion layer includes an Fe—Al alloy layer and an Fe—Al intermetallic compound layer that are sequentially disposed on the base steel sheet and each include silicon, and an area fraction of the Fe—Al intermetallic compound layer with respect to the diffusion layer is 84.5% to 98.0%.
    Type: Grant
    Filed: December 2, 2020
    Date of Patent: January 18, 2022
    Assignee: Hyundai Steel Company
    Inventors: Sung Min Kim, Hye Rim Choi
  • Patent number: 11228144
    Abstract: A plug as an electrical connector according to the present disclosure includes a box-shaped housing and a lock lever having an arm in such a manner that a base end of the arm is rotatable, and the lock lever is configured to pull the mating housing inside the box-shaped housing. On a side face of the box-shaped housing, a projection is provided which can be hidden from the side face thereof. A recess is provided in an intermediate portion of the arm of the lock lever, and the projection can be introduced and the rotation of the lock lever in the one direction can be prevented. The recess includes a bottom wall (first inner wall) and a side wall (second inner wall) formed therein which can be pressed by the projection by a rotational force of the lock lever in one direction being divided.
    Type: Grant
    Filed: September 23, 2020
    Date of Patent: January 18, 2022
    Assignee: J.S.T. MFG. CO., LTD.
    Inventors: Sung-Min Kim, Kang-Suk Noh
  • Publication number: 20210402740
    Abstract: Disclosed is a steel sheet for hot press forming, which includes: a base steel sheet; and a plating layer disposed on the base steel sheet and including a diffusion layer and a surface layer that are sequentially laminated, wherein the diffusion layer includes an Fe—Al alloy layer and an Fe—Al intermetallic compound layer that are sequentially disposed on the base steel sheet and each include silicon, and an area fraction of the Fe—Al intermetallic compound layer with respect to the diffusion layer is 84.5% to 98.0%.
    Type: Application
    Filed: December 2, 2020
    Publication date: December 30, 2021
    Inventors: Sung Min Kim, Hye Rim Choi
  • Patent number: 11211490
    Abstract: A semiconductor device includes an active fin extending in a first direction on a substrate, a gate electrode intersecting the active fin and extending in a second direction, source/drain regions disposed on the active fin on both sides of the gate electrode, and a contact plug disposed on the source/drain regions. The contact plug has at least one side extending in the second direction which has a step portion having a step shape.
    Type: Grant
    Filed: February 19, 2020
    Date of Patent: December 28, 2021
    Inventors: Sun Hom Paak, Sung Min Kim
  • Publication number: 20210398948
    Abstract: A device includes a lower semiconductor substrate, a lower gate structure on the lower semiconductor substrate, the lower gate structure comprises a lower gate electrode, a lower interlayer insulating film on the lower semiconductor substrate, an upper semiconductor substrate on the lower interlayer insulating film, an upper gate structure on the upper semiconductor substrate, and an upper interlayer insulating film on the lower interlayer insulating film, the upper interlayer insulating film covers sidewalls of the upper semiconductor substrate The upper gate structure comprises an upper gate electrode extending in a first direction and gate spacers along sidewalls of the upper gate electrode. The upper gate electrode comprises long sidewalls extending in the first direction and short sidewalls in a second direction The gate spacers are on the long sidewalls of the upper gate electrode and are not disposed on the short sidewalls of the upper gate electrode.
    Type: Application
    Filed: September 1, 2021
    Publication date: December 23, 2021
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sung Min KIM, Dae Won HA
  • Patent number: 11201086
    Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.
    Type: Grant
    Filed: March 30, 2020
    Date of Patent: December 14, 2021
    Inventors: Sung-Min Kim, Sunhom Steve Paak, Heon-Jong Shin, Dong-Ho Cha
  • Patent number: 11201592
    Abstract: The present invention relates to a Doherty combiner used in a Doherty power amplifier, the Doherty combiner comprising: a phase shift section connected to one end of a carrier amplifier so as to change a phase of an RF signal output from the carrier amplifier; a matching section connected to an output terminal of the Doherty power amplifier so as to impedance-match an output of the Doherty power amplifier; and a bandwidth improvement section connected to one end of a peaking amplifier so as to change at least one of a phase bandwidth and an amplitude bandwidth of the Doherty power amplifier.
    Type: Grant
    Filed: October 23, 2017
    Date of Patent: December 14, 2021
    Assignee: SOONCHUNHYANG UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION
    Inventors: Dal Ahn, Kwan-Sun Choi, Jong-Sik Lim, Sang-Min Han, Sung-Min Kim, You-Na Jang, Dae-Ung Lee, Jun-Seok Oh, Seo Koo, Tae-Hoon Kang, Ji-Won Kim, Ik-Soo Jang
  • Patent number: 11195952
    Abstract: Semiconductor devices are provided. A semiconductor device includes a fin structure including a stress structure and a semiconductor region that are sequentially stacked on a substrate. The semiconductor device includes a field insulation layer on a portion of the fin structure. The semiconductor device includes a gate electrode on the fin structure. Moreover, the stress structure includes an oxide.
    Type: Grant
    Filed: May 3, 2019
    Date of Patent: December 7, 2021
    Inventors: Sung Min Kim, Hyo Jin Kim, Dae Won Ha
  • Patent number: 11173214
    Abstract: The present invention relates to antibody-drug conjugates (ADCs) wherein a plurality of active agents are conjugated to an antibody through at least one branched linker. The branched linker may comprise a branching unit, and two active agents are coupled to the branching unit through a secondary linker and the branching unit is coupled to the antibody by a primary linker. The active agents may be the same or different. In certain such embodiments, two or more such branched linkers are conjugated to the antibody, e.g., 2-4 branched linkers, which may each be coupled to a different C-terminal cysteine of a heavy or light chain of the antibody. The branched linker may comprise one active agent coupled to the branching unit by a first branch and a second branch that comprises a polyethylene glycol moiety coupled to the branching unit. In certain such embodiments, two or more such branched linkers are conjugated to the antibody, e.g.
    Type: Grant
    Filed: November 23, 2016
    Date of Patent: November 16, 2021
    Assignee: LegoChem Biosciences, Inc.
    Inventors: Yong Zu Kim, Yeong Soo Oh, Jeiwook Chae, Ho Young Song, Chul-Woong Chung, Yun Hee Park, Hyo Jung Choi, Kyung Eun Park, Hyoungrae Kim, Jinyeong Kim, Ji Young Min, Sung Min Kim, Byung Soo Lee, Dong Hyun Woo, Ji Eun Jung, Su In Lee
  • Patent number: 11167040
    Abstract: In some aspects, the invention relates to an antibody-drug conjugate, comprising an antibody; a linker; and at least two active agents. In preferred embodiments, the linker comprises a peptide sequence of a plurality of amino acids, and at least two of the active agents are covalently coupled to side chains of the amino acids. The antibody-drug conjugate may comprise a self-immolative group, preferably two-self-immolative groups. The linker may comprise an O-substituted oxime, e.g., wherein the oxygen atom of the oxime is substituted with a group that covalently links the oxime to the active agent; and the carbon atom of the oxime is substituted with a group that covalently links the oxime to the antibody.
    Type: Grant
    Filed: November 23, 2016
    Date of Patent: November 9, 2021
    Assignee: LegoChem Biosciences, Inc.
    Inventors: Yong Zu Kim, Yeong Soo Oh, Jeiwook Chae, Ho Young Song, Chul-Woong Chung, Yun Hee Park, Hyo Jung Choi, Kyung Eun Park, Hyoungrae Kim, Jinyeong Kim, Ji Young Min, Sung Min Kim, Byung Soo Lee, Dong Hyun Woo, Ji Eun Jung, Su In Lee
  • Patent number: 11139271
    Abstract: A device includes a lower semiconductor substrate, a lower gate structure on the lower semiconductor substrate, the lower gate structure comprises a lower gate electrode, a lower interlayer insulating film on the lower semiconductor substrate, an upper semiconductor substrate on the lower interlayer insulating film, an upper gate structure on the upper semiconductor substrate, and an upper interlayer insulating film on the lower interlayer insulating film, the upper interlayer insulating film covers sidewalls of the upper semiconductor substrate The upper gate structure comprises an upper gate electrode extending in a first direction and gate spacers along sidewalls of the upper gate electrode. The upper gate electrode comprises long sidewalls extending in the first direction and short sidewalls in a second direction The gate spacers are on the long sidewalls of the upper gate electrode and are not disposed on the short sidewalls of the upper gate electrode.
    Type: Grant
    Filed: July 11, 2019
    Date of Patent: October 5, 2021
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sung Min Kim, Dae Won Ha
  • Publication number: 20210287259
    Abstract: A method for providing real time service of huge and high quality digital image on internet is disclosed, wherein data relevant to a general life such as a general photo, an advertising leaflet, and a pamphlet and professional image data exhibited in an art gallery, exhibition grounds, a pavilion are made into huge and high quality digital image or scanned and photographed to be digital, thereby processing real time service as an interactive browsing form. In the present invention, data are directly made, edited, constructed, and uploaded on internet, thereby providing various additional information with image through hyperlink and processing high quality digital image service on network without speed delay for huge image.
    Type: Application
    Filed: March 26, 2021
    Publication date: September 16, 2021
    Inventor: Sung-Min KIM
  • Publication number: 20210268786
    Abstract: The present invention relates to a flexible laminated film including a first substrate layer, an adhesive layer or a pressure-sensitive adhesive layer, a second substrate layer, and a hard coating layer, and to a display device including the flexible laminated film.
    Type: Application
    Filed: February 10, 2021
    Publication date: September 2, 2021
    Applicant: Dongwoo Fine-Chem Co., Ltd.
    Inventors: Sung-Min Kim, Na-Youn Kim
  • Patent number: 11104600
    Abstract: Provided is a dental bulk block for grinding processing. The dental bulk block includes a crystalloid, which includes lithium disilicate as a main crystal phase and silicate as a sub-crystal phase, and hyaline as a remainder. The dental bulk block is a functionally gradient material having a crystalline size gradient with respect to a depth thereof and having no interface at a change point of a crystalline size gradient value. The dental bulk block is useful for manufacturing an artificial dental prosthesis that is similar to natural teeth. Accordingly, the time and process for manufacturing the artificial dental prosthesis are shortened, and structural stability is increased in terms of dispersion of force due to gradient functionalization of mechanical properties.
    Type: Grant
    Filed: August 6, 2019
    Date of Patent: August 31, 2021
    Assignee: HASS CO., LTD.
    Inventors: Hyung Bong Lim, Yong Su Kim, Kyung Sik Oh, Young Pyo Hong, Sung Min Kim, Joon Hyung Kim, Si Won Son, Yena Kim
  • Publication number: 20210252595
    Abstract: An outer ring for a variable oil pump including 0.5 to 0.7% by weight of carbon (C), 2.9 to 3.8% by weight of nickel (Ni), 1.3 to 1.7% by weight of copper (Cu), 0.4 to 0.6% by weight molybdenum (Mo), and a remainder of iron (Fe) and unavoidable impurities, in which austenite occupies less than 15% of a total area, and a method of manufacturing the same are provided, and a method of manufacturing the same are provided.
    Type: Application
    Filed: May 26, 2020
    Publication date: August 19, 2021
    Inventors: Hak Soo Kim, Sung Min Kim
  • Publication number: 20210227925
    Abstract: The present invention may provide shoes comprising an arch pad, the shoes comprising: an arch pad provided with a block seating groove that is formed in an area corresponding to the arch part of a foot; and an arch block positioned on the block seating groove and formed convexly so as to protrude from the upper surface of the arch pad such that the upper surface of the arch block pressurizes the arch part of the foot. The arch block comprises: a base portion fixed to the block seating groove; and a deformation portion which can be attached to/detached from the base portion such that the position in which the deformation portion pressurizes the arch part can be adjusted according to the position in which the deformation portion is installed on the base portion.
    Type: Application
    Filed: October 10, 2019
    Publication date: July 29, 2021
    Inventor: Sung Min KIM
  • Publication number: 20210214483
    Abstract: Dental composite composition including a glass ceramic and a curable organic material is described in which the glass ceramic includes a crystal phase having an average grain size of 50 to 400 nm, and the dental composite composition is provided as a dental prosthetic material exhibiting superior transparency and mechanical properties comparing to conventional composite products containing micro-sized crystal grains and also has excellent aesthetics and processability required for prosthetic materials for same-day dental prosthetic service.
    Type: Application
    Filed: February 4, 2020
    Publication date: July 15, 2021
    Inventors: Yong Su KIM, Hyung Bong LIM, Kyung Sik OH, Sung Min KIM, Young Pyo HONG, Joon Hyung KIM, Si Won SON, Yena KIM
  • Patent number: 11063065
    Abstract: A semiconductor device includes: a substrate including a first region and a second region; a first interfacial layer disposed on the substrate in the first region and having a first thickness; a second interfacial layer disposed on the substrate in the second region, wherein the second interfacial layer includes a second thickness that is smaller than the first thickness; a first gate insulating layer disposed on the first interfacial layer and including a first ferroelectric material layer; a second gate insulating layer disposed on the second interfacial layer; a first gate electrode disposed on the first gate insulating layer; and a second gate electrode disposed on the second gate insulating layer.
    Type: Grant
    Filed: June 27, 2019
    Date of Patent: July 13, 2021
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Guk Il An, Keun Hwi Cho, Sung Min Kim, Yoon Moon Park
  • Publication number: 20210182551
    Abstract: Disclosed is a method and system, the method including extracting similar and dissimilar document pair sets from a document database, the similar document pair set including similar document pairs having a common attribute, and the dissimilar document pair set including dissimilar document pairs extracted randomly, calculating a mathematical similarity for each of the similar and dissimilar document pairs using a mathematical measure to obtain a first and second mathematical similarities, calculating a semantic similarity for each of the similar and dissimilar document pairs to obtain a first and second semantic similarities, the first semantic similarities being higher than the first mathematical similarities, and the second semantic similarities being lower than the second mathematical similarities, training a similarity model based on the similar and dissimilar document pairs, and the first and second semantic similarities to obtain a trained similarity model, and detecting a duplicate document using the t
    Type: Application
    Filed: December 11, 2020
    Publication date: June 17, 2021
    Applicant: NAVER CORPORATION
    Inventors: Sung Min KIM, Byeonghoon HAN
  • Patent number: D930700
    Type: Grant
    Filed: February 5, 2021
    Date of Patent: September 14, 2021
    Assignee: GOOGLE LLC
    Inventors: Sung Min Kim Arena, Nayon Kim, Jessica Suen, J. Christopher Irwin, Andrew Schoneweis