Abstract: A method of controlling an EOP of a powertrain may include determining, by a controller electrically connected to the EOP, whether an oil sloshing phenomenon in which it is difficult for oil to return to a space where an oil intake port of the EOP is positioned may occur while a vehicle is running; and reducing, by the controller, the revolutions per minute (RPM) of the EOP by a predetermined reduced RPM when it is determined that the oil sloshing phenomenon may occur.

Abstract: An organic light emitting diode includes a first electrode; a hole auxiliary layer on the first electrode; a light emitting material layer on the hole auxiliary layer and emitting white light; an electron auxiliary layer on the light emitting material layer; and a second electrode on the electron auxiliary layer, wherein the light emitting material layer includes a first light emitting material layer, a second light emitting material layer and a third light emitting material layer sequentially layered, and wherein the first light emitting material layer includes an electron blocking material.

Abstract: The present invention relates to a novel indole-based compound having superior hole injection and transport capabilities, light-emitting capabilities, and the like, and an organic electroluminescent device which comprises the indole-based compound in one or more organic layers thereof so as to thereby achieve improved characteristics, such as light-emitting efficiency, driving voltage, and lifespan characteristics.

Abstract: An organic light emitting diode includes a first electrode; a hole auxiliary layer on the first electrode; a light emitting material layer on the hole auxiliary layer and emitting white light; an electron auxiliary layer on the light emitting material layer; and a second electrode on the electron auxiliary layer, wherein the light emitting material layer includes a first light emitting material layer, a second light emitting material layer and a third light emitting material layer sequentially layered, and wherein the first light emitting material layer includes an electron blocking material.

Abstract: Disclosed are a phenyl-isoxazol derivative compound, which is useful as a treatment material for virus infection, especially, infection of an influenza virus, or its pharmaceutically acceptable derivative, a preparation method thereof, and an illness treatment pharmaceutical composition including the compound as an active ingredient.

Abstract: According to the present invention, if a zirconium nitride lattice is grown by a method for growing zirconium nitride using a metal-organic vapor phase epitaxy method, the lattice binding efficiency of ZrN and GaN can enable a low cost preparation of an LED having high performance and it is very advantageous to grow a green LED by a direct band gap in the presence of Zr3N4. In addition, InZr3N4 can be substituted for In when growing a MQW in an LED, and thus it is very advantageous to prepare green and red LEDs. Further, a more satisfactory diffusion current can be obtained using ZrN or Zr3N4 as an epitaxial interlayer, and thus it is very advantageous in the application of a large LED chip and it is possible to prevent thermal expansion or cracks with respect to a silicon substrate.

Abstract: The present invention relates to a novel indole-based compound having superior hole injection and transport capabilities, light-emitting capabilities, and the like, and an organic electroluminescent device which comprises the indole-based compound in one or more organic layers thereof so as to thereby achieve improved characteristics, such as light-emitting efficiency, driving voltage, and lifespan characteristics.

Abstract: Disclosed are a phenyl-isoxazol derivative compound, which is useful as a treatment material for virus infection, especially, infection of an influenza virus, or its pharmaceutically acceptable derivative, a preparation method thereof, and an illness treatment pharmaceutical composition including the compound as an active ingredient.

Abstract: An image sensor and fabricating method thereof are disclosed by which damage to a protective layer can be prevented in a manner of reducing thermal stress of an uppermost metal line in performing thermal treatment for enhancing the dark characteristic. Such damage can be prevented by forming a poly layer pattern in an insulating interlayer on at least one side of the uppermost layer metal line.

Abstract: Disclosed is a method for manufacturing a CMOS image sensor, capable of preventing dopants implanted with high energy from penetrating into a lower part of a gate electrode when a photodiode is formed, thereby preventing current leakage of a transistor and variation of a threshold voltage. The method includes the steps of forming a gate electrode on a transistor area of a first conductive type semiconductor substrate including a photodiode area and the transistor area, forming a salicide layer on the gate electrode, and implanting second conductive type dopants for forming a photodiode in a photodiode area of the semiconductor substrate.

Abstract: Shorting of a copper line with an adjacent line in a semiconductor device during chemical mechanical polishing may be prevented and thus reliability of the semiconductor device may be improved, when the semiconductor device includes a substrate, an interlayer insulating layer formed on the substrate and having a dual trench, and a copper line formed to fill the dual trench, wherein the dual trench includes a first trench inclined at a first angle with respect to the substrate, and a second trench connected to the first trench and inclined at a second angle that is smaller than the first angle with respect to the substrate.

Abstract: A method for modeling a varactor with a MOS structure, and transforms an s-parameter obtained by the measurement using measurement equipment into a y-parameter and a z-parameter and then directly extracts parameters required for the modeling by means of equations in accordance with embodiments. The modeling can be made reflecting the parameters of the varactor varied according to frequency so that the more accurate RF modeling of a passive device can be made and the accurate modeling of the varactor can be made through the direct extraction method of the parameters so that the parameters of the varactor having a physical meaning can be extracted without using an expensive CAD tool, the time required for optimizing the parameters can be reduced, a computing time can be shorten, an initial condition dependence generated in performing the optimization is not required, and a pattern for a test is not required.

Abstract: An image sensor and fabricating method thereof are disclosed by which damage to a protective layer can be prevented in a manner of reducing thermal stress of an uppermost metal line in performing thermal treatment for enhancing the dark characteristic. Such damage can be prevented by forming a poly layer pattern in an insulating interlayer on at least one side of the uppermost layer metal line.

Abstract: Disclosed is a well photoresist pattern of a semiconductor, and the fabrication method thereof. The method includes the steps of: (a) forming a sacrificial oxide layer on a semiconductor substrate; (b) applying a primer on the sacrificial oxide layer; (c) applying a photoresist on the primer; (d) soft-baking the photoresist; (e) exposing the photoresist to light by defocusing the DOF (depth of focus) of the light transmitted to the substrate; (f) post exposure baking the photoresist; (g) developing the photo-exposed photoresist to form a well photoresist pattern; and (h) hard-baking the well photoresist pattern. It is preferable that the exposure is performed by plus(+) defocusing of light.

Abstract: A method for modeling a varactor with a MOS structure, and transforms an s-parameter obtained by the measurement using measurement equipment into a y-parameter and a z-parameter and then directly extracts parameters required for the modeling by means of equations in accordance with embodiments. The modeling can be made reflecting the parameters of the varactor varied according to frequency so that the more accurate RF modeling of a passive device can be made and the accurate modeling of the varactor can be made through the direct extraction method of the parameters so that the parameters of the varactor having a physical meaning can be extracted without using an expensive CAD tool, the time required for optimizing the parameters can be reduced, a computing time can be shorten, an initial condition dependence generated in performing the optimization is not required, and a pattern for a test is not required.

Abstract: A semiconductor device including at least one of: lightly doped drain regions over a semiconductor substrate; a gate insulating layer over a semiconductor substrate between lightly doped drain regions; and/or a gate formed at an upper side of a gate insulating layer. A lower width of a gate may be less than an interval between lightly doped drain regions. An upper width of a gate may be greater than an interval between lightly doped drain regions.

Abstract: Shorting of a copper line with an adjacent line in a semiconductor device during chemical mechanical polishing may be prevented and thus reliability of the semiconductor device may be improved, when the semiconductor device includes a substrate, an interlayer insulating layer formed on the substrate and having a dual trench, and a copper line formed to fill the dual trench, wherein the dual trench includes a first trench inclined at a first angle with respect to the substrate, and a second trench connected to the first trench and inclined at a second angle that is smaller than the first angle with respect to the substrate.