Abstract: A device may be configured to receive, process, forward, and/or respond to one or more resource queries. For example, the device may determine whether multiple queries are satisfied by a multicast response. The device may receive a first query and a second query directed to a resource, The first and the second query may comprise a structure proxy rule identifier (sPRID). The device may determine the similarity between the two queries. For example, the similarity determination may be based on the sPRID of the two queries. The device may determine whether a response that satisfies the first query also satisfies the second query, which may be based on a response to the first query and information comprised within the sPRID of the two queries. If the response satisfies both queries, the device may multicast the response.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.

Abstract: A plasma processing device is provided with a chamber including a space that is configured to perform a treatment process for a wafer. A supporting member is disposed inside of the chamber and configured to support the wafer. A gas supply unit is configured to inject a mixed gas in different directions toward the supporting member. The pressure of the mixed gas is increased by adding inert gas to reactive gas.

Abstract: A method for fabricating a semiconductor device includes forming an insulating layer on a substrate; forming a first mask pattern including silicon on the insulating layer and forming a second mask pattern including an oxide on the first mask pattern; forming a coating layer that includes carbon and which covers an upper surface of the insulating layer, a sidewall of the first mask pattern, and the second mask pattern; removing a portion of the coating layer and the second mask pattern; forming a metal layer on an upper surface of the first mask pattern and on a sidewall of the coating layer; exposing the upper surface of the insulating layer by removing the coating layer; and etching the insulating layer by using the first mask pattern and the metal layer as a mask.

Abstract: A substrate support apparatus includes a substrate stage to support a substrate, and a ground ring assembly along a circumference of the substrate stage, the ground ring assembly including a ground ring body, the ground ring body having a plurality of recesses along a circumferential portion thereof, and a plurality of ground blocks movable to be received into respective recesses of the plurality of recesses, the plurality of ground blocks including a conductive material to be electrically grounded.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.

Abstract: The present invention relates to an ion exchange membrane and a manufacturing method therefor and, more specifically, to an ion exchange membrane comprising a cross-linked sulfonated triblock copolymer and carbon nanotube, which is utilizable in a redox flow energy storage device, etc. due to high ion conductivity, mechanical strength and ion selectivity. The ion exchange membrane of the present invention has superior ion selectivity and mechanical strength and thus can greatly improve the performance of a fuel battery, etc. when applied thereto.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.

Abstract: A method for fabricating a semiconductor device includes forming an insulating layer on a substrate; forming a first mask pattern including silicon on the insulating layer and forming a second mask pattern including an oxide on the first mask pattern; forming a coating layer that includes carbon and which covers an upper surface of the insulating layer, a sidewall of the first mask pattern, and the second mask pattern; removing a portion of the coating layer and the second mask pattern; forming a metal layer on an upper surface of the first mask pattern and on a sidewall of the coating layer; exposing the upper surface of the insulating layer by removing the coating layer; and etching the insulating layer by using the first mask pattern and the metal layer as a mask.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.

Abstract: A communication method of a transmission node includes generating information of a transmission unavailable time period of the transmission node in a reception available time period of a reception node, and transmitting, to the reception node, the information of the transmission unavailable time period. The reception node operates in a sleep state based on the information of the transmission unavailable time period.

Abstract: The present invention relates to an ion exchange membrane and a manufacturing method therefor and, more specifically, to an ion exchange membrane comprising a cross-linked sulfonated triblock copolymer and carbon nanotube, which is utilizable in a redox flow energy storage device, etc. due to high ion conductivity, mechanical strength and ion selectivity. The ion exchange membrane of the present invention has superior ion selectivity and mechanical strength and thus can greatly improve the performance of a fuel battery, etc. when applied thereto.

Abstract: The present invention relates to a novel coumarin derivative, to a method for preparing the same, and a multi-fluorescent substance that includes a plurality of the coumarin derivatives and is able to emit light using an LED light source. A novel coumarin derivative multi-fluorescent substance according to the present invention has an optimal emission wavelength band of 512 nm to 590 nm and thereby is effective in improving a signal intensity and stability since light emission using an LED light source is possible. In addition, higher fluorescence reactivity is exhibited compared to coumarin fluorescent substances known in the related arts since one molecule has a plurality of fluorescent substances, and the problem of the coumarin fluorescent substance possibly binding to a binding site of the antigen of the antibody is solved since fluorescence detection is possible even when a minimum number of fluorescent substance molecules bind to an antibody.

Abstract: A communication method of a transmission node includes generating information of a transmission unavailable time period of the transmission node in a reception available time period of a reception node, and transmitting, to the reception node, the information of the transmission unavailable time period. The reception node operates in a sleep state based on the information of the transmission unavailable time period.

Abstract: The present invention relates to a novel coumarin derivative, to a method for preparing the same, and a multi-fluorescent substance that includes a plurality of the coumarin derivatives and is able to emit light using an LED light source. A novel coumarin derivative multi-fluorescent substance according to the present invention has an optimal emission wavelength band of 512 nm to 590 nm and thereby is effective in improving a signal intensity and stability since light emission using an LED light source is possible. In addition, higher fluorescence reactivity is exhibited compared to coumarin fluorescent substances known in the related arts since one molecule has a plurality of fluorescent substances, and the problem of the coumarin fluorescent substance possibly binding to a binding site of the antigen of the antibody is solved since fluorescence detection is possible even when a minimum number of fluorescent substance molecules bind to an antibody.

Abstract: Provided are a hub, a relay node, and a node for reconfiguring an active time position of a node in a WBAN. An active time position of the node may be reconfigured based on information associated with an active time position of a candidate relay node that the node desires to use as a relay node.

Abstract: Provided are a hub, a relay node, and a node for reconfiguring an active time position of a node in a WBAN. An active time position of the node may be reconfigured based on information associated with an active time position of a candidate relay node that the node desires to use as a relay node.

Abstract: The present invention relates to a novel Mg—Ti—Al composite metal hydroxide and to production method therefor. Mg—Ti—Al composite hydroxide particles can be obtained by subjecting a solution containing a magnesium salt and a titanium salt to ultrasound processing and carrying out a high-temperature and high-pressure reaction with a solution containing an aluminum salt in the proportions of the metal elements comprised in the Mg—Ti—Al composite metal hydroxide, thereby giving the advantageous effects that the halogen capturing ability is excellent and, when used in a polymer, degradation and early-staining prevention properties and transparency are outstanding.

Abstract: Provided are a hub, a relay node, and a node for reconfiguring an active time position of a node in a WBAN. An active time position of the node may be reconfigured based on information associated with an active time position of a candidate relay node that the node desires to use as a relay node.

Abstract: A method for preparing a cyclic olefin polymer is described. The method includes polymerizing cyclic olefin monomers or a cyclic olefin monomer with ethylene to prepare a cyclic olefin polymer solution; slowly adding a non-solvent drop wise to the cyclic olefin polymer solution to precipitate a cyclic olefin polymer; and filtering and drying the precipitated cyclic olefin polymer. In addition, the cyclic olefin polymer prepared using this method is described. According to the present invention, a spherical cyclic olefin polymer having a high bulk density can be easily separated from the cyclic olefin polymer solution by precipitation.