Abstract: The present invention provides a pharmaceutical composition for prevention or treatment of a stress disease and depression, the pharmaceutical composition be safely useable without toxicity and side effects by using an extract of leaves of Vaccinium bracteatum Thunb., which is natural resource of Korea, so that the reduction of manufacturing and production costs and the import substitution and export effects can be expected through the replacement of a raw material for preparation with a plant inhabiting in nature.

Abstract: Gate-all-around integrated circuit devices include first and second source/drain regions on an active area of an integrated circuit substrate. The first and second source/drain regions form p-n rectifying junctions with the active area. A channel region extends between the first and second source/drain regions. An insulated gate electrode surrounds the channel region.

Abstract: Disclosed are a diimmonium salt and a near infrared ray absorption film including the same which is used for blocking the near infrared ray. The diimmonium salt for a near infrared ray absorption film is represented by Formula 1 of the specification, wherein, n is an integer of 1 or 2, R1 to R8 are independently a substituted or unsubstituted linear or branched C1-C10 alkyl group, the substituent for the alkyl group is selected from the group consisting of a cyano group, a nitro group, a carboxyl group, a sulfone group, a halogen atom, a hydroxyl group, a C1 -C8 alkoxy, alkoxyalkoxy, acyloxy, or alkylamino group, and C6-C18 aryl or aryloxy group, and X is a substituted fluoro alkyl phosphate anion represented by Formula 2 of the specification, wherein, x is an integer of 0 or 1, y is an integer of 1, 2 or 3, z is an integer of 6-y, and R9 to R13 are independently a hydrogen atom (H) or a fluorine atom (F).

Abstract: Disclosed are a diimmonium salt and a near infrared ray absorption film including the same which is used for blocking the near infrared ray. The diimmonium salt for a near infrared ray absorption film is represented by Formula 1 of the specification, wherein, n is an integer of 1 or 2, R1 to R8 are independently a substituted or unsubstituted linear or branched C1-C10 alkyl group, the substituent for the alkyl group is selected from the group consisting of a cyano group, a nitro group, a carboxyl group, a sulfone group, a halogen atom, a hydroxyl group, a C1 -C8 alkoxy, alkoxyalkoxy, acyloxy, or alkylamino group, and C6-C18 aryl or aryloxy group, and X is a substituted fluoro alkyl phosphate anion represented by Formula 2 of the specification, wherein, x is an integer of 0 or 1, y is an integer of 1, 2 or 3, z is an integer of 6-y, and R9 to R13 are independently a hydrogen atom (H) or a fluorine atom (F).

Abstract: A semiconductor device having MIM capacitors is configured so that the bottom surface of the lower electrode and a top surface area of an oxidation barrier pattern are substantially equal. Related methods for forming the device are also described.

Abstract: A semiconductor device having MIM capacitors is configured so that the bottom surface of the lower electrode and a top surface area of an oxidation barrier pattern are substantially equal. Related methods for forming the device are also described.

Abstract: A ferroelectric memory device has a lower electrode, ferroelectric layer and a first portion of an upper electrode that are formed as a stack over a semiconductor substrate. Sidewalls of the stack are covered with a second portion of the upper electrode. An insulating spacer is disposed between the lower electrode and the second portion of the upper electrode. The second portion of the upper electrode is electrically connected to the first portion of the upper electrode yet electrically insulated by the insulating spacer from the lower electrode. At least one of the first and second portions of the upper electrode is formed of a hydrogen barrier layer to protect the ferroelectric layer of the stack from hydrogen ions.

Abstract: A ferroelectric memory device comprises a lower electrode, ferroelectric layer and a first portion of an upper electrode that are formed as a stack over a semiconductor substrate. Sidewalls of the stack are covered with a second portion of the upper electrode. An insulating spacer is disposed between the lower electrode and the second portion of the upper electrode. The second portion of the upper electrode is electrically connected to the first portion of the upper electrode yet electrically insulated by the insulating spacer from the lower electrode. At least one of the first and second portions of the upper electrode are formed of a hydrogen barrier layer to protect the ferroelectric layer of the stack from hydrogen ions.