Abstract: A micro channel structure body 10 in which a micro channel 3 having a predetermined cross-sectional shape is formed in a laminate where substrates 1a, 1b, and 1c having formed thereon electrodes 2a, 2b, and 2c made of a thin film are laminated sequentially. The above-mentioned micro channel 3 is formed in a perpendicular direction ? perpendicular to a lamination direction ? of the above-mentioned laminate. Inner surfaces 3a and 3b of the above-mentioned micro channel 3 have an acute angle ? with respect to the lamination direction ? of the above-mentioned laminate. The above-mentioned plurality of electrodes 2a, 2b, and 2c are formed and exposed in the lamination direction ? of the inner surfaces 3a and 3b of the above-mentioned micro channel 3.

Abstract: A micro channel structure body 10 in which a micro channel 3 having a predetermined cross-sectional shape is formed in a laminate where substrates 1a, 1b, and 1c having formed thereon electrodes 2a, 2b, and 2c made of a thin film are laminated sequentially. The above-mentioned micro channel 3 is formed in a perpendicular direction ? perpendicular to a lamination direction ? of the above-mentioned laminate. Inner surfaces 3a and 3b of the above-mentioned micro channel 3 have an acute angle ? with respect to the lamination direction ? of the above-mentioned laminate. The above-mentioned plurality of electrodes 2a, 2b, and 2c are formed and exposed in the lamination direction ? of the inner surfaces 3a and 3b of the above-mentioned micro channel 3.

Abstract: A metal member-buried ceramics article which can uniformalize adsorption force or adsorption force and distribution of temperature in plane, decrease pollution of a semiconductor wafer, and suppress warping of the whole body is provided. This article has a three layer structure comprising, between an upper layer 2 and a lower layer 3 composed of an AlN sintered body in the form of plate, an intermediate connecting layer 4 having a thickness of 0.5 to 10 mm composed of a sintered body of defatted AlN powder and a metal electrode 5 in contact with the inner surface of the upper layer or lower layer or a metal electrode in contact with the inner surface of the upper layer and a metal electric resistor in contact with the inner surface of the lower layer sandwiched between them, and has means for suppressing a stress remaining in sintering the defatted AlN powder.

Abstract: A semiconductor pressure converter includes a silicon pressure sensing element, a silicon base hermetically attached to the sensing element to bear the element and a metal pipe connected to the silicon base so as to introduce a pressure to the sensing element through the silicon base.