Abstract: Embodiments of the present disclosure generally relate to spintronic devices, and more specifically to self-cooling spintronic devices. In an embodiment, a device is provided. The device includes a spintronic device having a first side and a second side opposite the first side, a first layer disposed on the first side, and a second layer disposed on the second side, the first layer having a Seebeck coefficient that is different from a Seebeck coefficient of the second layer.

Abstract: The present disclosure generally relate to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of bismuth or bismuth-rich composition modulation layers, a plurality of TI lamellae layers comprising BiSb having a (012) crystal orientation, and a plurality of texturing layers. The TI lamellae layers comprise dopants or clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material. The clusters of atoms are configured to have a grain boundary glass forming temperature of less than about 400° C. Doping the TI lamellae layers comprising BiSb having a (012) crystal orientation with clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material enable the SOT MTJ device to operate at higher temperatures while inhibiting migration of Sb from the BiSb of the TI lamellae layers.

Abstract: Aspects of the present disclosure generally relate to a spintronic device for use in a magnetic media drive, a magnetoresistive random access memory device, a magnetic sensor, or a magnetic recording write head. The spintronic device comprises a multilayer structure having a negative anisotropic field and a negative spin polarization. The multilayer structure comprises a plurality of layers, each layer of the plurality of layers comprising a first sublayer comprising Fe and a second sublayer comprising Co. At least one of the first sublayer and the second sublayer comprises one or more of Cr, V, and Ti. The first and second sublayers are alternating. The negative anisotropic field of the multilayer structure is between about ?0.5 T to about ?0.8 T, and an effective magnetization of the multilayer structure is between about 2.4 T to about 2.8 T.

Abstract: Aspects of the present disclosure generally relate to a magnetic recording head of a spintronic device, such as a write head of a data storage device, for example a magnetic media drive. In one example, a magnetic recording head includes a main pole, a trailing shield, and a spin torque layer (STL) between the main pole and the trailing shield. The magnetic recording head a first layer structure on the main pole, and the first layer structure includes a negative polarization layer. The magnetic recording head also includes a second layer structure disposed on the negative polarization layer and between the negative polarization layer and the STL. The negative polarization layer is an FeCr layer. The second layer structure includes a Cr layer disposed on the FeCr layer, and a Cu layer disposed on the Cr layer and between the Cr layer and the STL.

Abstract: Aspects of the present disclosure generally relate to a magnetic recording head of a magnetic media drive. In one example, a magnetic recording head includes a main pole, a trailing shield, and spintronic device disposed between the main pole and the trailing shield. The spintronic device comprises a negative polarization layer (NPL) disposed on the main pole, the NPL comprising FeTi, FeV, FeCr, or FeN, an interface layer disposed on the NPL, the interface layer comprising V, Cr, or Ru, a spacer layer disposed on the interface layer, and a spin torque layer (FGL) disposed on the spacer layer. When current is applied to the spintronic device, the NPL and a first interface disposed between the NPL and the interface layer have a negative spin polarization while the FGL and a second interface disposed between the FGL and the spacer layer have a positive spin polarization.

Abstract: Aspects of the present disclosure generally relate to a magnetic recording head of a spintronic device, such as a write head of a data storage device, for example a magnetic media drive. In one example, a magnetic recording head includes a main pole, a trailing shield, and a spin torque layer (STL) between the main pole and the trailing shield. The magnetic recording head includes a first layer structure on the main pole, and the first layer structure includes a negative polarization layer. The magnetic recording head also includes a second layer structure disposed on the negative polarization layer and between the negative polarization layer and the STL. The negative polarization layer is an FeCr layer. The second layer structure includes a Cr layer disposed on the FeCr layer, and a Cu layer disposed on the Cr layer and between the Cr layer and the STL.

Abstract: A spin torque oscillator includes a first electrode, a second electrode and a device layer stack located between the first electrode and the second electrode. The device layer stack includes a spin polarization layer including a first ferromagnetic material, an assist layer including a third ferromagnetic material, a ferromagnetic oscillation layer including a second ferromagnetic material located between the spin polarization layer and the assist layer, a nonmagnetic spacer layer located between the spin polarization layer and the ferromagnetic oscillation, and a nonmagnetic coupling layer located between the ferromagnetic oscillation layer and the assist layer. The assist layer is antiferromagnetically coupled to the ferromagnetic oscillation layer through the non-magnetic coupling layer, and the assist layer has a magnetization that is coupled to a magnetization of the ferromagnetic oscillation layer.

Abstract: Aspects of the present disclosure generally relate to a magnetic recording head of a spintronic device, such as a write head of a data storage device, for example a magnetic media drive. In one example, a magnetic recording head includes a main pole, a trailing shield, and a spin torque layer (STL) between the main pole and the trailing shield. The magnetic recording head a first layer structure on the main pole, and the first layer structure includes a negative polarization layer. The magnetic recording head also includes a second layer structure disposed on the negative polarization layer and between the negative polarization layer and the STL. The negative polarization layer is an FeCr layer. The second layer structure includes a Cr layer disposed on the FeCr layer, and a Cu layer disposed on the Cr layer and between the Cr layer and the STL.

Abstract: Embodiments of the present disclosure generally relate to a write head for a magnetic recording device. The write head includes a spin torque oscillator (STO) that has a seed layer formed on a write pole, a spin polarization layer (SPL) formed on the seed layer, a first spacer layer formed on the SPL, a field generation layer (FGL) formed on the first spacer layer, a second spacer layer formed on the FGL, and a notch formed on the second spacer layer. The FGL and the notch are antiferromagnetically coupled through the second spacer layer and thus increases the FGL angle and improves the write capabilities of the write head.

Abstract: Certain embodiments are directed to a spin torque oscillator (STO) device in a microwave assisted magnetic recording (MAMR) device. The magnetic recording head includes a seed layer, a spin polarization layer over the seed layer, a spacer layer over the spin polarization layer, and a field generation layer is over the spacer layer. In one embodiment, the seed layer comprises a tantalum alloy layer. In another embodiment, the seed layer comprises a template layer and a damping reduction layer over the template layer. In yet another embodiment, the seed layer comprises a texture reset layer, a template layer on the texture reset layer, and a damping reduction layer on the template layer.

Abstract: A spin torque oscillator includes a first electrode, a second electrode and a device layer stack located between the first electrode and the second electrode. The device layer stack includes a spin polarization layer including a first ferromagnetic material, an assist layer including a third ferromagnetic material, a ferromagnetic oscillation layer including a second ferromagnetic material located between the spin polarization layer and the assist layer, a nonmagnetic spacer layer located between the spin polarization layer and the ferromagnetic oscillation, and a nonmagnetic coupling layer located between the ferromagnetic oscillation layer and the assist layer. The assist layer is antiferromagnetically coupled to the ferromagnetic oscillation layer through the non-magnetic coupling layer, and the assist layer has a magnetization that is coupled to a magnetization of the ferromagnetic oscillation layer.

Abstract: A spin torque oscillator includes a first electrode, a second electrode and a device layer stack located between the first electrode and the second electrode. The device layer stack includes a spin polarization layer including a first ferromagnetic material, an assist layer including a third ferromagnetic material, a ferromagnetic oscillation layer including a second ferromagnetic material located between the spin polarization layer and the assist layer, a nonmagnetic spacer layer located between the spin polarization layer and the ferromagnetic oscillation, and a nonmagnetic coupling layer located between the ferromagnetic oscillation layer and the assist layer. The assist layer is antiferromagnetically coupled to the ferromagnetic oscillation layer through the non-magnetic coupling layer, and the assist layer has a magnetization that is coupled to a magnetization of the ferromagnetic oscillation layer.

Abstract: A spin torque oscillator includes a first electrode, a second electrode and a device layer stack located between the first electrode and the second electrode. The device layer stack includes a spin polarization layer including a first ferromagnetic material, an assist layer including a third ferromagnetic material, a ferromagnetic oscillation layer including a second ferromagnetic material located between the spin polarization layer and the assist layer, a nonmagnetic spacer layer located between the spin polarization layer and the ferromagnetic oscillation, and a nonmagnetic coupling layer located between the ferromagnetic oscillation layer and the assist layer. The assist layer is antiferromagnetically coupled to the ferromagnetic oscillation layer through the non-magnetic coupling layer, and the assist layer has a magnetization that is coupled to a magnetization of the ferromagnetic oscillation layer.

Abstract: Certain embodiments are directed to a spin torque oscillator (STO) device in a microwave assisted magnetic recording (MAMR) device. The magnetic recording head includes a seed layer, a spin polarization layer over the seed layer, a spacer layer over the spin polarization layer, and a field generation layer is over the spacer layer. In one embodiment, the seed layer comprises a tantalum alloy layer. In another embodiment, the seed layer comprises a template layer and a damping reduction layer over the template layer. In yet another embodiment, the seed layer comprises a texture reset layer, a template layer on the texture reset layer, and a damping reduction layer on the template layer.

Abstract: A spin transfer torque (STT) device is formed on an electrically conductive substrate and includes a ferromagnetic free layer near the substrate, a ferromagnetic polarizing layer and a nonmagnetic spacer layer between the free layer and the polarizing layer. A multilayer structure is located between the substrate and the free layer. The multilayer structure includes a metal or metal alloy seed layer for the free layer and an intermediate oxide layer below and in contact with the seed layer. The intermediate oxide layer reflects spin current from the free layer and thus reduces undesirable damping of the oscillation of the free layer's magnetization by the seed layer.

Abstract: Aspects of the present disclosure relate to spin torque oscillator (STO) and methods, such as spin torque oscillators used in write heads of magnetic media drives. The STO includes a seed layer, a spin polarization layer (SPL), a spacer layer, a field generation layer (FGL), a capping layer. An insertion layer is disposed within the STO. The insertion layer increases the negative Hk. The insertion layer may be located between the FGL and the capping layer, as well as between the FGL and the spacer layer. For a reverse STO, the insertion layer may be disposed between the FGL and the seed layer, as well as between the FGL and the spacer layer.

Abstract: In one embodiment, a write head includes a spin polarization layer (SPL) over a seed layer. A spacer layer is over the SPL. A trailing shield is over the spacer layer. The spacer layer forms a first interface between the spacer layer and the trailing shield and forms a second interface between the spacer layer and the SPL. The first interface has an area larger than an area of the second interface. In another embodiment, a write head includes a SPL over a spacer layer. A capping layer is over the SPL. A trailing shield is over the capping layer. The spacer layer forms a first interface between the spacer layer and the main pole and forms a second interface between the spacer layer and the SPL. The first interface has an area larger than an area of the second interface.

Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a trailing shield, a main pole, an STO disposed between the trailing shield and the main pole, and a non-magnetic conductive structure adjacent to the main pole and in contact with the STO. The STO includes an FGL and an SPL, and the FGL is disposed between the main pole and the SPL. The FGL includes a side extending over the main pole and at least a portion of the non-magnetic conductive structure. With the FGL disposed proximate to the main pole and over at least a portion of the non-magnetic conductive structure, current crowding and disturbance from the trailing shield are minimized.

Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a trailing shield, a main pole, an STO disposed between the trailing shield and the main pole, and a non-magnetic conductive structure adjacent to the main pole and in contact with the STO. The STO includes an FGL and an SPL, and the FGL is disposed between the main pole and the SPL. The FGL includes a side extending over the main pole and at least a portion of the non-magnetic conductive structure. With the FGL disposed proximate to the main pole and over at least a portion of the non-magnetic conductive structure, current crowding and disturbance from the trailing shield are minimized.

Abstract: A spin transfer torque (STT) device is formed on an electrically conductive substrate and includes a ferromagnetic polarizer layer near the substrate, a ferromagnetic free layer, and a nonmagnetic spacer layer between the ferromagnetic polarizer layer and the ferromagnetic free layer. A multilayer structure is located between the substrate and the ferromagnetic polarizer layer. The multilayer structure includes a metal or metal alloy seed layer for the ferromagnetic polarizer layer and an intermediate oxide layer below and in contact with the seed layer. The intermediate oxide layer reflects spin current from the write pole and thus reduces undesirable spin pumping of the ferromagnetic polarizer layer.