Abstract: An imaging device of an embodiment of the present disclosure includes a light separator, a first pixel, a second pixel, and a light shielding unit. The light separator separates first wavelength light included in a first wavelength region and second wavelength light included in a second wavelength region from incident light, and includes a structure whose size is equal to or less than a wavelength of incident light. The first pixel includes a first photoelectric converter that selectively receives the first wavelength light and performs photoelectric conversion on the first wavelength light. The second pixel is adjacent to the first pixel and includes a second photoelectric converter that selectively receives the second wavelength light and performs photoelectric conversion on the second wavelength light. The light shielding unit is provided at a boundary between the first pixel and the second pixel and blocks incident light.

Abstract: There is provided an image sensor including a first substrate including a plurality of pixels and a plurality of vertical signal lines and a plurality of first wiring layers and a second substrate including a plurality of second wiring layers. The first and second substrates are secured together between the pluralities of first and second wiring layers. First pads are provided between one of the plurality of first wiring layers and one of the plurality of second wiring layers and second pads are provided between another of the plurality of first wiring layers and another of the plurality of second wiring layers. First vias and second vias connect the first pads and the one of the plurality of first wiring layers and the one of the plurality of second wiring layers together.

Abstract: In a work vehicle, a safety frame includes a base, a pair of left and right lower frames extending from the base and fastened to a pair of left and right rear wheel fenders, and an upper frame having an inverted U shape connecting upper portions of the pair of left and right lower frames. The base is removably fastened to a rear axle case. A length in a width direction between a pair of left and right rear wheels is changed by changing a length in a width direction of the upper frame and changing a fastening position of the base to the rear axle case.

Abstract: There is provided an image sensor including a first substrate including a plurality of pixels and a plurality of vertical signal lines and a plurality of first wiring layers and a second substrate including a plurality of second wiring layers. The first and second substrates are secured together between the pluralities of first and second wiring layers. First pads are provided between one of the plurality of first wiring layers and one of the plurality of second wiring layers and second pads are provided between another of the plurality of first wiring layers and another of the plurality of second wiring layers. First vias and second vias connect the first pads and the one of the plurality of first wiring layers and the one of the plurality of second wiring layers together.

Abstract: An imaging device including: pixel area and a peripheral area that lies outside the pixel area; light receiving element provided in the pixel area; circuit board provided in the pixel area and the peripheral area, the circuit board including a semiconductor substrate and a multilayer wiring layer, the multilayer wiring layer being provided between the semiconductor substrate and the light receiving element; first wiring line provided in the multilayer wiring layer, the first wiring line being electrically coupled to the light receiving element; a protective member that is opposed to the circuit board, the protective member and the circuit board sandwiching the light receiving element; and an extended wiring section provided between the semiconductor substrate and the protective member in the peripheral area, one end of the extended wiring section being open and another end of the extended wiring section being electrically coupled to the first wiring line.

Abstract: A solid-state imaging element according to the present disclosure includes a semiconductor layer and a separation region. The semiconductor layer includes a plurality of photoelectric conversion sections disposed in a matrix. The separation region separates the photoelectric conversion sections adjacent to each other in the semiconductor layer. The separation region includes a wall-like electrode and a low absorption member. The wall-like electrode is disposed in a wall shape, and a negative bias voltage is applied thereto. The low absorption member is disposed further on the light incident side than the wall-like electrode and has a light absorption rate smaller than that of the wall-like electrode.

Abstract: In a work vehicle, a safety frame includes a base, a pair of left and right lower frames extending from the base and fastened to a pair of left and right rear wheel fenders, and an upper frame having an inverted U shape connecting upper portions of the pair of left and right lower frames. The base is removably fastened to a rear axle case. A length in a width direction between a pair of left and right rear wheels is changed by changing a length in a width direction of the upper frame and changing a fastening position of the base to the rear axle case.

Abstract: In a work vehicle, a safety frame includes a base, a pair of left and right lower frames extending from the base and fastened to a pair of left and right rear wheel fenders, and an upper frame having an inverted U shape connecting upper portions of the pair of left and right lower frames. The base is removably fastened to a rear axle case. A length in a width direction between a pair of left and right rear wheels is changed by changing a length in a width direction of the upper frame and changing a fastening position of the base to the rear axle case.

Abstract: There is provided an image sensor including a first substrate including a plurality of pixels and a plurality of vertical signal lines and a plurality of first wiring layers and a second substrate including a plurality of second wiring layers. The first and second substrates are secured together between the pluralities of first and second wiring layers. First pads are provided between one of the plurality of first wiring layers and one of the plurality of second wiring layers and second pads are provided between another of the plurality of first wiring layers and another of the plurality of second wiring layers. First vias and second vias connect the first pads and the one of the plurality of first wiring layers and the one of the plurality of second wiring layers together.

Abstract: The present disclosure relates to a solid-state imaging element, a manufacturing method, and an electronic apparatus capable of suppressing an adverse effect of high-order light of diffracted light on image quality. A glass plate material is bonded to a semiconductor substrate on which a pixel region in which a plurality of pixels is arranged is formed so that a gap is not provided between the glass plate material and the pixel region, and a low refractive index layer having a refractive index lower than that of the glass substrate is arranged on a resin layer between a low reflection film formed on a front surface of an on-chip lens arranged for every pixel and the glass plate material. The low refractive index layer is formed by a hole layer that includes a plurality of fine holes having a diameter smaller than a pitch of the pixels and a film that is formed so as to close the plurality of fine holes as hollows.

Abstract: An imaging device including: pixel area and a peripheral area that lies outside the pixel area; light receiving element provided in the pixel area; circuit board provided in the pixel area and the peripheral area, the circuit board including a semiconductor substrate and a multilayer wiring layer, the multilayer wiring layer being provided between the semiconductor substrate and the light receiving element; first wiring line provided in the multilayer wiring layer, the first wiring line being electrically coupled to the light receiving element; a protective member that is opposed to the circuit board, the protective member and the circuit board sandwiching the light receiving element; and an extended wiring section provided between the semiconductor substrate and the protective member in the peripheral area, one end of the extended wiring section being open and another end of the extended wiring section being electrically coupled to the first wiring line.

Abstract: The present disclosure relates to a solid-state imaging element, a manufacturing method, and an electronic apparatus capable of suppressing an adverse effect of high-order light of diffracted light on image quality. A glass plate material is bonded to a semiconductor substrate on which a pixel region in which a plurality of pixels is arranged is formed so that a gap is not provided between the glass plate material and the pixel region, and a low refractive index layer having a refractive index lower than that of the glass substrate is arranged on a resin layer between a low reflection film formed on a front surface of an on-chip lens arranged for every pixel and the glass plate material. The low refractive index layer is formed by a hole layer that includes a plurality of fine holes having a diameter smaller than a pitch of the pixels and a film that is formed so as to close the plurality of fine holes as hollows.

Abstract: The present disclosure relates to an imaging element, an electronic device, and an information processing device capable of more easily providing a wider variety of photoelectric conversion outputs. An imaging element of the present disclosure includes: a photoelectric conversion element layer containing a photoelectric conversion element that photoelectrically converts incident light; a wiring layer formed in the photoelectric conversion element layer on the side opposite to a light entering plane of the incident light, and containing a wire for reading charges from the photoelectric conversion element; and a support substrate laminated on the photoelectric conversion element layer and the wiring layer, and containing another photoelectric conversion element. The present disclosure is applicable to an imaging element, an electronic device, and an information processing device.

Abstract: The present disclosure relates to an imaging element, an electronic device, and an information processing device capable of more easily providing a wider variety of photoelectric conversion outputs. An imaging element of the present disclosure includes: a photoelectric conversion element layer containing a photoelectric conversion element that photoelectrically converts incident light; a wiring layer formed in the photoelectric conversion element layer on the side opposite to a light entering plane of the incident light, and containing a wire for reading charges from the photoelectric conversion element; and a support substrate laminated on the photoelectric conversion element layer and the wiring layer, and containing another photoelectric conversion element. The present disclosure is applicable to an imaging element, an electronic device, and an information processing device.

Abstract: The present disclosure relates to an imaging element, an electronic device, and an information processing device capable of more easily providing a wider variety of photoelectric conversion outputs.

Abstract: The present disclosure relates to an imaging element, an electronic device, and an information processing device capable of more easily providing a wider variety of photoelectric conversion outputs. An imaging element of the present disclosure includes: a photoelectric conversion element layer containing a photoelectric conversion element that photoelectrically converts incident light; a wiring layer formed in the photoelectric conversion element layer on the side opposite to a light entering plane of the incident light, and containing a wire for reading charges from the photoelectric conversion element; and a support substrate laminated on the photoelectric conversion element layer and the wiring layer, and containing another photoelectric conversion element. The present disclosure is applicable to an imaging element, an electronic device, and an information processing device.

Abstract: The present disclosure relates to an imaging element, an electronic device, and an information processing device capable of more easily providing a wider variety of photoelectric conversion outputs. An imaging element of the present disclosure includes: a photoelectric conversion element layer containing a photoelectric conversion element that photoelectrically converts incident light; a wiring layer formed in the photoelectric conversion element layer on the side opposite to a light entering plane of the incident light, and containing a wire for reading charges from the photoelectric conversion element; and a support substrate laminated on the photoelectric conversion element layer and the wiring layer, and containing another photoelectric conversion element. The present disclosure is applicable to an imaging element, an electronic device, and an information processing device.

Abstract: An imaging device includes: plural photoelectric conversion device layers in which photoelectric conversion devices performing photoelectric conversion of incident light are formed; and a wiring layer sandwiched by respective photoelectric conversion device layers, in which wirings for reading charges from the photoelectric conversion devices are formed.

Abstract: The present disclosure relates to an imaging element, an electronic device, and an information processing device capable of more easily providing a wider variety of photoelectric conversion outputs. An imaging element of the present disclosure includes: a photoelectric conversion element layer containing a photoelectric conversion element that photoelectrically converts incident light; a wiring layer formed in the photoelectric conversion element layer on the side opposite to a light entering plane of the incident light, and containing a wire for reading charges from the photoelectric conversion element; and a support substrate laminated on the photoelectric conversion element layer and the wiring layer, and containing another photoelectric conversion element. The present disclosure is applicable to an imaging element, an electronic device, and an information processing device.

Abstract: An imaging device includes a basic cell having two or more the pixels that share floating diffusion. The imaging device also includes a transistor shared by the two or more pixels in the basic cell and arranged on the outside of the two or more pixels. The imaging device further includes a light receiving unit connected to the floating diffusion shared by the pixels in the basic cell through a transfer gate. In the imaging device, on-chip lenses are arranged substantially at regular intervals. Also, an optical waveguide is formed so that the position thereof in the surface of the solid-state imaging device is located at a position shifted from the center of the light receiving unit to the transistor and in the inside of the light receiving unit and the inside of the on-chip lens.