Patents by Inventor Susumu Ooki

Susumu Ooki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200303438
    Abstract: The present disclosure relates to a solid-state imaging element, a manufacturing method, and an electronic apparatus capable of suppressing an adverse effect of high-order light of diffracted light on image quality. A glass plate material is bonded to a semiconductor substrate on which a pixel region in which a plurality of pixels is arranged is formed so that a gap is not provided between the glass plate material and the pixel region, and a low refractive index layer having a refractive index lower than that of the glass substrate is arranged on a resin layer between a low reflection film formed on a front surface of an on-chip lens arranged for every pixel and the glass plate material. The low refractive index layer is formed by a hole layer that includes a plurality of fine holes having a diameter smaller than a pitch of the pixels and a film that is formed so as to close the plurality of fine holes as hollows.
    Type: Application
    Filed: September 25, 2018
    Publication date: September 24, 2020
    Inventor: SUSUMU OOKI
  • Patent number: 10784293
    Abstract: The present disclosure relates to an imaging element, an electronic device, and an information processing device capable of more easily providing a wider variety of photoelectric conversion outputs. An imaging element of the present disclosure includes: a photoelectric conversion element layer containing a photoelectric conversion element that photoelectrically converts incident light; a wiring layer formed in the photoelectric conversion element layer on the side opposite to a light entering plane of the incident light, and containing a wire for reading charges from the photoelectric conversion element; and a support substrate laminated on the photoelectric conversion element layer and the wiring layer, and containing another photoelectric conversion element. The present disclosure is applicable to an imaging element, an electronic device, and an information processing device.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: September 22, 2020
    Assignee: Sony Corporation
    Inventors: Susumu Ooki, Masashi Nakata
  • Publication number: 20190019823
    Abstract: The present disclosure relates to an imaging element, an electronic device, and an information processing device capable of more easily providing a wider variety of photoelectric conversion outputs. An imaging element of the present disclosure includes: a photoelectric conversion element layer containing a photoelectric conversion element that photoelectrically converts incident light; a wiring layer formed in the photoelectric conversion element layer on the side opposite to a light entering plane of the incident light, and containing a wire for reading charges from the photoelectric conversion element; and a support substrate laminated on the photoelectric conversion element layer and the wiring layer, and containing another photoelectric conversion element. The present disclosure is applicable to an imaging element, an electronic device, and an information processing device.
    Type: Application
    Filed: September 14, 2018
    Publication date: January 17, 2019
    Applicant: SONY CORPORATION
    Inventors: Susumu OOKI, Masashi NAKATA
  • Patent number: 10128285
    Abstract: The present disclosure relates to an imaging element, an electronic device, and an information processing device capable of more easily providing a wider variety of photoelectric conversion outputs.
    Type: Grant
    Filed: January 23, 2017
    Date of Patent: November 13, 2018
    Assignee: Sony Corporation
    Inventors: Susumu Ooki, Masashi Nakata
  • Publication number: 20170162618
    Abstract: The present disclosure relates to an imaging element, an electronic device, and an information processing device capable of more easily providing a wider variety of photoelectric conversion outputs. An imaging element of the present disclosure includes: a photoelectric conversion element layer containing a photoelectric conversion element that photoelectrically converts incident light; a wiring layer formed in the photoelectric conversion element layer on the side opposite to a light entering plane of the incident light, and containing a wire for reading charges from the photoelectric conversion element; and a support substrate laminated on the photoelectric conversion element layer and the wiring layer, and containing another photoelectric conversion element. The present disclosure is applicable to an imaging element, an electronic device, and an information processing device.
    Type: Application
    Filed: January 23, 2017
    Publication date: June 8, 2017
    Inventors: Susumu OOKI, Masashi NAKATA
  • Patent number: 9577012
    Abstract: The present disclosure relates to an imaging element, an electronic device, and an information processing device capable of more easily providing a wider variety of photoelectric conversion outputs. An imaging element of the present disclosure includes: a photoelectric conversion element layer containing a photoelectric conversion element that photoelectrically converts incident light; a wiring layer formed in the photoelectric conversion element layer on the side opposite to a light entering plane of the incident light, and containing a wire for reading charges from the photoelectric conversion element; and a support substrate laminated on the photoelectric conversion element layer and the wiring layer, and containing another photoelectric conversion element. The present disclosure is applicable to an imaging element, an electronic device, and an information processing device.
    Type: Grant
    Filed: July 12, 2013
    Date of Patent: February 21, 2017
    Assignee: Sony Corporation
    Inventors: Susumu Ooki, Masashi Nakata
  • Patent number: 9294691
    Abstract: An imaging device includes: plural photoelectric conversion device layers in which photoelectric conversion devices performing photoelectric conversion of incident light are formed; and a wiring layer sandwiched by respective photoelectric conversion device layers, in which wirings for reading charges from the photoelectric conversion devices are formed.
    Type: Grant
    Filed: August 29, 2012
    Date of Patent: March 22, 2016
    Assignee: SONY CORPORATION
    Inventor: Susumu Ooki
  • Publication number: 20150171146
    Abstract: The present disclosure relates to an imaging element, an electronic device, and an information processing device capable of more easily providing a wider variety of photoelectric conversion outputs. An imaging element of the present disclosure includes: a photoelectric conversion element layer containing a photoelectric conversion element that photoelectrically converts incident light; a wiring layer formed in the photoelectric conversion element layer on the side opposite to a light entering plane of the incident light, and containing a wire for reading charges from the photoelectric conversion element; and a support substrate laminated on the photoelectric conversion element layer and the wiring layer, and containing another photoelectric conversion element. The present disclosure is applicable to an imaging element, an electronic device, and an information processing device.
    Type: Application
    Filed: July 12, 2013
    Publication date: June 18, 2015
    Inventors: Susumu Ooki, Masashi Nakata
  • Patent number: 8817164
    Abstract: An imaging device includes a basic cell having two or more the pixels that share floating diffusion. The imaging device also includes a transistor shared by the two or more pixels in the basic cell and arranged on the outside of the two or more pixels. The imaging device further includes a light receiving unit connected to the floating diffusion shared by the pixels in the basic cell through a transfer gate. In the imaging device, on-chip lenses are arranged substantially at regular intervals. Also, an optical waveguide is formed so that the position thereof in the surface of the solid-state imaging device is located at a position shifted from the center of the light receiving unit to the transistor and in the inside of the light receiving unit and the inside of the on-chip lens.
    Type: Grant
    Filed: January 31, 2013
    Date of Patent: August 26, 2014
    Assignee: Sony Corporation
    Inventors: Hiroshi Tayanaka, Susumu Ooki, Junichi Furukawa, Fumiaki Okazaki
  • Publication number: 20130234220
    Abstract: An imaging device includes a basic cell having two or more the pixels that share floating diffusion. The imaging device also includes a transistor shared by the two or more pixels in the basic cell and arranged on the outside of the two or more pixels. The imaging device further includes a light receiving unit connected to the floating diffusion shared by the pixels in the basic cell through a transfer gate. In the imaging device, on-chip lenses are arranged substantially at regular intervals. Also, an optical waveguide is formed so that the position thereof in the surface of the solid-state imaging device is located at a position shifted from the center of the light receiving unit to the transistor and in the inside of the light receiving unit and the inside of the on-chip lens.
    Type: Application
    Filed: January 31, 2013
    Publication date: September 12, 2013
    Applicant: SONY CORPORATION
    Inventors: Hiroshi Tayanaka, Susumu Ooki, Junichi Furukawa, Fumiaki Okazaki
  • Patent number: 8431880
    Abstract: A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.
    Type: Grant
    Filed: January 12, 2012
    Date of Patent: April 30, 2013
    Assignee: Sony Corporation
    Inventors: Takuji Matsumoto, Tetsuji Yamaguchi, Keiji Tatani, Yutaka Nishimura, Kazuichiro Itonaga, Hiroyuki Mori, Norihiro Kubo, Fumihiko Koga, Shinichiro Izawa, Susumu Ooki
  • Publication number: 20130057699
    Abstract: An imaging device includes: plural photoelectric conversion device layers in which photoelectric conversion devices performing photoelectric conversion of incident light are formed; and a wiring layer sandwiched by respective photoelectric conversion device layers, in which wirings for reading charges from the photoelectric conversion devices are formed.
    Type: Application
    Filed: August 29, 2012
    Publication date: March 7, 2013
    Applicant: SONY CORPORATION
    Inventor: Susumu Ooki
  • Patent number: 8390726
    Abstract: An imaging device includes a basic cell having two or more the pixels that share floating diffusion. The imaging device also includes a transistor shared by the two or more pixels in the basic cell and arranged on the outside of the two or more pixels. The imaging device further includes a light receiving unit connected to the floating diffusion shared by the pixels in the basic cell through a transfer gate. In the imaging device, on-chip lenses are arranged substantially at regular intervals. Also, an optical waveguide is formed so that the position thereof in the surface of the solid-state imaging device is located at a position shifted from the center of the light receiving unit to the transistor and in the inside of the light receiving unit and the inside of the on-chip lens.
    Type: Grant
    Filed: March 22, 2010
    Date of Patent: March 5, 2013
    Assignee: Sony Corporation
    Inventors: Hiroshi Tayanaka, Susumu Ooki, Junichi Furukawa, Fumiaki Okazaki
  • Patent number: 8211733
    Abstract: A solid-state imaging device including an imaging region having a plurality of pixels arranged in a two-dimensional matrix and a peripheral circuit detecting output signals from the pixels. An impurity concentration in a transistor of each pixel is lower than an impurity concentration in a transistor of the peripheral circuit. Further, the impurity concentration of a semiconductor well region under a floating diffusion portion in the pixel is set to be lower than the impurity concentration of a semiconductor well region under a transistor portion at the subsequent stage of the floating diffusion portion.
    Type: Grant
    Filed: August 11, 2010
    Date of Patent: July 3, 2012
    Assignee: Sony Corporation
    Inventors: Maki Sato, Susumu Ooki
  • Publication number: 20120104479
    Abstract: A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.
    Type: Application
    Filed: January 12, 2012
    Publication date: May 3, 2012
    Applicant: SONY CORPORATION
    Inventors: Takuji Matsumoto, Tetsuji Yamaguchi, Keiji Tatani, Yutaka Nishimura, Kazuichiro Itonaga, Hiroyuki Mori, Norihiro Kubo, Fumihiko Koga, Shinichiro Izawa, Susumu Ooki
  • Patent number: 8115154
    Abstract: A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.
    Type: Grant
    Filed: July 27, 2009
    Date of Patent: February 14, 2012
    Assignee: Sony Corporation
    Inventors: Takuji Matsumoto, Tetsuji Yamaguchi, Keiji Tatani, Yutaka Nishimura, Kazuichiro Itonaga, Hiroyuki Mori, Norihiro Kubo, Fumihiko Koga, Shinichiro Izawa, Susumu Ooki
  • Publication number: 20100330724
    Abstract: A solid-state imaging device including an imaging region having a plurality of pixels arranged in a two-dimensional matrix and a peripheral circuit detecting output signals from the pixels. An impurity concentration in a transistor of each pixel is lower than an impurity concentration in a transistor of the peripheral circuit. Further, the impurity concentration of a semiconductor well region under a floating diffusion portion in the pixel is set to be lower than the impurity concentration of a semiconductor well region under a transistor portion at the subsequent stage of the floating diffusion portion.
    Type: Application
    Filed: August 11, 2010
    Publication date: December 30, 2010
    Applicant: SONY CORPORATION
    Inventors: MAKI SATO, SUSUMU OOKI
  • Publication number: 20100245648
    Abstract: An imaging device includes a basic cell having two or more the pixels that share floating diffusion. The imaging device also includes a transistor shared by the two or more pixels in the basic cell and arranged on the outside of the two or more pixels. The imaging device further includes a light receiving unit connected to the floating diffusion shared by the pixels in the basic cell through a transfer gate. In the imaging device, on-chip lenses are arranged substantially at regular intervals. Also, an optical waveguide is formed so that the position thereof in the surface of the solid-state imaging device is located at a position shifted from the center of the light receiving unit to the transistor and in the inside of the light receiving unit and the inside of the on-chip lens.
    Type: Application
    Filed: March 22, 2010
    Publication date: September 30, 2010
    Applicant: SONY CORPORATION
    Inventors: Hiroshi Tayanaka, Susumu Ooki, Junichi Furukawa, Fumiaki Okazaki
  • Patent number: 7795655
    Abstract: There is provided a solid-state imaging device including an imaging region having a plurality of pixels arranged in a two-dimensional matrix and a peripheral circuit detecting output signals from the pixels. An impurity concentration in a transistor of each pixel is lower than an impurity concentration in a transistor of the peripheral circuit. Further, the impurity concentration of a semiconductor well region under a floating diffusion portion in the pixel is set to be lower than the impurity concentration of a semiconductor well region under a transistor portion at the subsequent stage of the floating diffusion portion.
    Type: Grant
    Filed: September 27, 2007
    Date of Patent: September 14, 2010
    Assignee: Sony Corporation
    Inventors: Maki Sato, Susumu Ooki
  • Publication number: 20100025569
    Abstract: A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.
    Type: Application
    Filed: July 27, 2009
    Publication date: February 4, 2010
    Applicant: SONY CORPORATION
    Inventors: Takuji Matsumoto, Tetsuji Yamaguchi, Keiji Tatani, Yutaka Nishimura, Kazuichiro Itonaga, Hiroyuki Mori, Norihiro Kubo, Fumihiko Koga, Shinichiro Izawa, Susumu Ooki