Patents by Inventor Susumu Sakaguchi
Susumu Sakaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8993029Abstract: The present invention obtains instant noodles which do not cause sticking and are easily loosened. Especially, the present invention provides an instant noodles producing method capable of preventing the sticking of the noodle strings even when the noodle strings are straight-type noodles. In a production process of the instant noodles, powdered oil is applied to the surface of a dough sheet or the surfaces of the noodle strings before steaming. Especially, after the powdered oil is applied to the dough sheet, the dough sheet is rolled out once or more. With this, the powdered oil is firmly fixed to the surfaces of the noodle strings. Thus, an extremely high sticking preventing effect can be obtained by an extremely small amount of the powdered oil.Type: GrantFiled: March 22, 2011Date of Patent: March 31, 2015Assignee: Nissin Foods Holdings Co., Ltd.Inventors: Tatsuo Yamaya, Takuo Nakazeko, Rippei Shikota, Koshi Minamitani, Susumu Sakaguchi, Mitsuru Tanaka
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Publication number: 20130059046Abstract: The present invention obtains instant noodles which do not cause sticking and are easily loosened. Especially, the present invention provides an instant noodles producing method capable of preventing the sticking of the noodle strings even when the noodle strings are straight-type noodles. In a production process of the instant noodles, powdered oil is applied to the surface of a dough sheet or the surfaces of the noodle strings before steaming. Especially, after the powdered oil is applied to the dough sheet. the dough sheet is rolled out once or more. With this, the powdered oil is firmly fixed to the surfaces of the noodle strings. Thus, an extremely high sticking preventing effect can be obtained by an extremely small amount of the powdered oil.Type: ApplicationFiled: March 22, 2011Publication date: March 7, 2013Applicant: NISSIN FOODS HOLDINGS CO., LTD.Inventors: Tatsuo Yamaya, Takuo Nakazeko, Rippei Shikota, Koshi Minamitani, Susumu Sakaguchi, Mitsuru Tanaka
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Patent number: 5667585Abstract: Proposed is a low-cost method for the preparation of a wire-formed crystal of silicon having a diameter of 1 mm or smaller, in which a vertically held starting rod of silicon is melted at one end portion by high-frequency induction heating, a seed crystal is brought into contact with the molten portion and then the seed crystal and the starting silicon rod are pulled apart in the vertical direction at a controlled velocity with a controlled high-frequency power input so that the melt of silicon drawn by the seed crystal is solidified and crystallized into the form of a wire.Type: GrantFiled: December 27, 1995Date of Patent: September 16, 1997Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Tsuguo Fukuda, Susumu Sakaguchi, Tadashi Kamioka, Toru Yamada, Teruhiko Hirasawa
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Patent number: 5431741Abstract: A novel structure of a silicon solar cell is disclosed, which can be prepared at an outstandingly low cost but can still exhibit good efficiency for the conversion of solar energy to electricity. The silicon solar cell comprises, as an integral body:(a) an electrically insulating substrate plate of, e.g., glass or a ceramic;(b1) a first group of metal contact lines formed in parallel with each other on the substrate surface to jointly serve as an electrode; (b2) a second group of metal contact lines formed in parallel with each other on the substrate surface to jointly serve as a counterelectrode, each of the metal contact lines of the second group being disposed between two metal contact lines of the first group, maintaining electric insulation therebetween; and(c) a plural number of wires of silicon semiconductor, each of which perpendicularly crosses each of the metal contact lines of the first and second groups in direct contact therewith.Type: GrantFiled: December 13, 1993Date of Patent: July 11, 1995Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Susumu Sakaguchi, Toru Yamada, Tadashi Kamioka, Teruhiko Hirasawa
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Patent number: 4755314Abstract: The x-cut single crystal wafer of lithium tantalate according to the invention is characterized by the orientation flat formed in a specific crystallographic orientation. The plane of the orientation flat should be (A) in parallel with the (018) plane or a plane which is in parallel with the x-axis and makes an angle of 15.degree. or smaller with the (018) plane or (B) in parallel with a plane which is in parallel with the x-axis and perpendicular to the (018) plane or a plane which is in parallel with the x-axis and makes an angle of 15.degree. or smaller with the plane which is in parallel with the x-axis and perpendicular to the (018) plane. In contrast to conventional lithium tantalate single crystal wafers provided with an orientation flat in a direction parallel to the 112.degree.Type: GrantFiled: December 3, 1985Date of Patent: July 5, 1988Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Susumu Sakaguchi, Masaaki Iguchi
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Patent number: 4534821Abstract: An improvement in the Czochralski single crystal growing of a rare earth-gallium garnet such as gadolinium gallium garnet according to which the single crystal boules of a relatively large diameter and outstandingly free from any crystal defects and inclusions are readily obtained. The improved method comprises keeping the melt of the oxide mixture formed in an iridium crucible for at least 15 hours in the molten state before crystal growing is started. It was also shown that addition of certain additive gases, e.g. water vapor, carbon dioxide and oxygen, to the gaseous atmosphere mainly composed of, for example, nitrogen, in which crystal growing was performed, in a limited proportion was effective to further improve the crystal quality and to decrease the particulate inclusions in the single crystal boules.Type: GrantFiled: June 13, 1983Date of Patent: August 13, 1985Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Susumu Sakaguchi, Ken Itoh, Masahiro Ogihara, Shinji Makigawa, Toshihiko Ryuo, Kazuyoshi Watanabe
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Patent number: 4483734Abstract: In the crystal growing of GGG (gadolinium gallium garnet) by the Czochralski technique from a melt of the oxide mixture of gadolinium and gallium, zinc is added to the oxide melt as a dopant element in a limited amount so that the danger of crack formation in the grown single crystals can be greatly decreased contributing to the improvement of the productivity. Moreover, the GGG single crystal grown with zinc doping has remarkably reduced light absorption in the wavelength region of around 300 nm responsible to the yellowish tint of the crystals.Type: GrantFiled: April 18, 1983Date of Patent: November 20, 1984Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Susumu Sakaguchi, Kazuyoshi Watanabe, Masahiro Ogihara, Toshihiko Ryuoh, Masaaki Iguchi, Norifumi Yoshida
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Patent number: 4412886Abstract: The invention provides a method for surface-finishing of a single crystal wafer of a ferroelectric material into a substrate plate suitable for use, for example, as a SAW filter element which is mirror-polished only on one of the surfaces, the other surface having an adequate roughness. Different from conventional methods, the inventive method comprises the successive steps of (a) slicing a single crystal boule into wafers, (b) lapping of the wafer on both surfaces to impart adequate roughness to the surfaces, (c) chemically etching the thus lapped surfaces to remove the strain produced in the preceding mechanical working, and (d) mirror-polishing one of the thus etched surfaces so that high uniformity of the thickness and greatly decreased warping of the wafer can be ensured.Type: GrantFiled: April 4, 1983Date of Patent: November 1, 1983Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Susumu Sakaguchi, Kenichi Taguchi, Masaaki Iguchi, Kunihiro Ito
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Prosthetic substituted member for living body and a method for the surgical treatment by use thereof
Patent number: 4336617Abstract: The invention provides an artificial prosthetic member for bone substitute with a novel structure comprising a core, an outer layer covering the core made of metallic aluminum, preferably, formed by electrolytic plating, and a surface layer on the outer layer formed of an anodically oxidized aluminum oxide. The prosthetic member of the invention is very advantageous with high affinity to the living tissues and absence of elution of poisonous metallic ions.Type: GrantFiled: January 21, 1981Date of Patent: June 29, 1982Assignees: Shin-Etsu Chemical Company Limited, Siemens AktiengesellschaftInventors: Takuji Shikita, Susumu Sakaguchi -
Patent number: 4215008Abstract: An efficient and economical method for the purification of hydrogen gas is proposed by use of an alloy of a rare earth metal with nickel and/or cobalt plus, optionally, iron, copper or chromium, utilizing the great selectivity of the alloy for the adsorption of hydrogen gas with very little adsorptivity for impurity gases commonly found in an impure hydrogen gas. The purification process is carried out by the pressurized adsorption of hydrogen on the alloy powder, followed by the recovery of high-purity hydrogen gas released from the alloy under reduced pressure or by heating. The alloy in the form of powder is preferably activated prior to use by repeated adsorption-desorption cycles of hydrogen on and from the alloy powder.Type: GrantFiled: June 27, 1978Date of Patent: July 29, 1980Assignees: Shin-Etsu Chemical Co. Ltd., Osaka Oxygen Industries Ltd.Inventors: Zenzi Hagiwara, Sigeo Matsui, Susumu Sakaguchi, Yoshio Yamanaka
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Patent number: 4154364Abstract: Thermally insulating containers or the Dewar containers useful for shipping and storage of low-temperature liquefied gases, having double walls made of a metal, the space between the walls being evacuated, are provided, the thermal insulation properties of which are prevented from deterioration by putting in the vacuum space, a getter alloy composed of a ternary alloy expressed by the formula LaNi.sub.x Cr.sub.y, where x is a number from 1 to 6, both inclusive and y is a number from 0.1 to 2, both inclusive, working to adsorb traces of hydrogen coming out of the wall material. The alloy is preferably an activated one. The vacuum thermal insulation can further be improved by the presence of an adsorbent having a large specific area which serves to adsorb traces of gases other than hydrogen.Type: GrantFiled: December 23, 1976Date of Patent: May 15, 1979Assignees: Shin-Etsu Chemical Co., Ltd., Osaka Oxygen Industries, Ltd.Inventors: Zenji Hagiwara, Sigeo Matsui, Yamanaka, Yoshio, Akira Kamei, Susumu Sakaguchi