Patents by Inventor Suvi P. Haukka

Suvi P. Haukka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9245742
    Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.
    Type: Grant
    Filed: December 18, 2013
    Date of Patent: January 26, 2016
    Assignee: ASM IP HOLDING B.V.
    Inventors: Suvi P. Haukka, Fu Tang, Michael Givens, Jan Willem Maes, Qi Xie
  • Publication number: 20160005649
    Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.
    Type: Application
    Filed: June 11, 2015
    Publication date: January 7, 2016
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
  • Patent number: 9217200
    Abstract: Methods of forming thin films on nanopatterning templates, such as nanoimprint lithography (NIL) templates are provided. In some embodiments, an atomic layer deposition (ALD) type process for modifying the surface of a NIL template comprises alternately and sequentially contacting a substrate in a reaction space with vapor phase pulses of two or more reactants.
    Type: Grant
    Filed: December 21, 2007
    Date of Patent: December 22, 2015
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Suvi P. Haukka, Kai-Erik Elers
  • Publication number: 20150299848
    Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.
    Type: Application
    Filed: April 15, 2015
    Publication date: October 22, 2015
    Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore
  • Patent number: 9129897
    Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.
    Type: Grant
    Filed: April 20, 2012
    Date of Patent: September 8, 2015
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Viljami J. Pore, Suvi P. Haukka, Tom E. Blomberg, Eva E. Tois
  • Patent number: 9112003
    Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: August 18, 2015
    Assignee: ASM International N.V.
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
  • Publication number: 20150217330
    Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.
    Type: Application
    Filed: February 3, 2015
    Publication date: August 6, 2015
    Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore, Ivo Raaijmakers
  • Publication number: 20150187600
    Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.
    Type: Application
    Filed: February 3, 2015
    Publication date: July 2, 2015
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
  • Publication number: 20150170914
    Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.
    Type: Application
    Filed: December 18, 2013
    Publication date: June 18, 2015
    Inventors: Suvi P. Haukka, Fu Tang, Michael Givens, Jan Willem Maes, Qi Xie
  • Publication number: 20150170907
    Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.
    Type: Application
    Filed: December 18, 2013
    Publication date: June 18, 2015
    Inventors: Suvi P. Haukka, Fu Tang, Michael Givens, Jan Willem Maes, Qi Xie
  • Patent number: 8956971
    Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.
    Type: Grant
    Filed: June 10, 2011
    Date of Patent: February 17, 2015
    Assignee: ASM International N.V.
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
  • Publication number: 20140273477
    Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).
    Type: Application
    Filed: January 29, 2014
    Publication date: September 18, 2014
    Applicant: ASM IP HOLDING B.V.
    Inventors: Antti J. Niskanen, Shang Chen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi P. Haukka
  • Publication number: 20140127405
    Abstract: Methods of forming metal carbide films are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and an aluminum hydrocarbon compound, such as TMA, DMAH, or TEA. The aluminum hydrocarbon compound is selected to achieve the desired properties of the metal carbide film, such as aluminum concentration, resistivity, adhesion and oxidation resistance. In some embodiments, the methods are used to form a metal carbide layer that determines the work function of a control gate in a flash memory.
    Type: Application
    Filed: November 1, 2013
    Publication date: May 8, 2014
    Applicant: ASM AMERICA, INC.
    Inventors: Dong Li, Steven Marcus, Suvi P. Haukka, Wei-Min Li
  • Publication number: 20140087076
    Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.
    Type: Application
    Filed: July 24, 2013
    Publication date: March 27, 2014
    Applicant: ASM International N.V.
    Inventors: Suvi P. Haukka, Marko J. Tuominen, Antti Rahtu
  • Patent number: 8545936
    Abstract: Methods of forming a roughened metal surface on a substrate for nucleating carbon nanotube growth, and subsequently growing carbon nanotubes are provided. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may then be used as nucleation points for initiating carbon nanotube growth. The carbon nanotubes are grown in the same process chamber (in-situ) as the formation of the three dimensional metal islands without exposing the substrate to air.
    Type: Grant
    Filed: March 28, 2008
    Date of Patent: October 1, 2013
    Assignee: ASM International N.V.
    Inventors: Hannu A. Huotari, Suvi P. Haukka
  • Patent number: 8501637
    Abstract: Methods are provided for depositing silicon dioxide containing thin films on a substrate by atomic layer deposition ALD. By using disilane compounds as the silicon source, good deposition rates and uniformity are obtained.
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: August 6, 2013
    Assignee: ASM International N.V.
    Inventors: Raija H. Matero, Suvi P. Haukka
  • Patent number: 8501275
    Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: August 6, 2013
    Assignee: ASM International N.V.
    Inventors: Suvi P. Haukka, Marko J. Tuominen, Antti Rahtu
  • Publication number: 20130189837
    Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.
    Type: Application
    Filed: June 10, 2011
    Publication date: July 25, 2013
    Applicant: ASM INTERNATIONAL N.V.
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
  • Publication number: 20130115768
    Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes.
    Type: Application
    Filed: August 22, 2012
    Publication date: May 9, 2013
    Inventors: Viljami J. Pore, Suvi P. Haukka, Tom E. Blomberg, Eva E. Tois
  • Publication number: 20120270393
    Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.
    Type: Application
    Filed: April 20, 2012
    Publication date: October 25, 2012
    Applicant: ASM INTERNATIONAL N.V.
    Inventors: Viljami J. Pore, Suvi P. Haukka, Tom E. Blomberg, Eva E. Tois