Patents by Inventor Svetlana B. Radovanov

Svetlana B. Radovanov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9024282
    Abstract: An apparatus for hydrogen and helium implantation is disclosed. The apparatus includes a plasma source system to generate helium ions and hydrogen molecular ions comprising H3+ ions. The apparatus further includes a substrate chamber adjacent the plasma source system and in communication with the plasma source system via one or more apertures, an extraction system to extract the hydrogen molecular ions and helium ions from the plasma source system, and an acceleration system to accelerate extracted helium and hydrogen molecular ions to a predetermined energy and direct the extracted helium ions and hydrogen molecular ions to a substrate.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: May 5, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Svetlana B. Radovanov, Ludovic Godet, Anthony Renau, Xianfeng Lu
  • Patent number: 8907300
    Abstract: An ion source may include a chamber configured to house a plasma comprising ions to be directed to a substrate and an extraction power supply configured to apply an extraction terminal voltage to the plasma chamber with respect to a voltage of a substrate positioned downstream of the chamber. The system may further include a boundary electrode voltage supply configured to generate a boundary electrode voltage different than the extraction terminal voltage, and a boundary electrode disposed within the chamber and electrically coupled to the boundary electrode voltage supply, the boundary electrode configured to alter plasma potential of the plasma when the boundary electrode voltage is received.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: December 9, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Svetlana B. Radovanov, Ludovic Godet, Tyler Rockwell, Chris Campbell
  • Publication number: 20140234554
    Abstract: A system for processing a substrate may include a first chamber operative to define a first plasma and a second chamber adjacent the first chamber, where the second chamber is electrically isolated from the first chamber, and configured to define a second plasma. The system may also include an extraction assembly disposed between the first chamber and second chamber to provide at least plasma isolation between the first plasma and the second plasma, a substrate assembly configured to support the substrate in the second chamber; and a biasing system configured to supply a plurality of first voltage pulses to direct first ions from the first plasma through the second chamber towards the substrate during one time period, and to supply a plurality of second voltage pulses to generate the second plasma and to attract second ions from the second plasma during another time period.
    Type: Application
    Filed: February 20, 2013
    Publication date: August 21, 2014
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Svetlana B. Radovanov, Ludovic Godet, Bon-Woong Koo
  • Patent number: 8669538
    Abstract: A system for improving ion beam quality is disclosed. According to one embodiment, the system comprises an ion source, having a chamber defined by a plurality of chamber walls; an RF antenna disposed on a first wall of the plurality of chamber walls; a second wall, opposite the first wall, the distance between the first wall and the second wall defining the height of the chamber; an aperture disposed on one of the plurality of chamber walls; a first gas inlet for introducing a first source gas to the chamber; and a second gas inlet for introducing a second source gas, different from the first source gas, to the chamber; wherein a first distance from the first gas inlet to the second wall is less than 35% of the height; and a second distance from the second gas inlet to the first wall is less than 35% of the height.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: March 11, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, Christopher J. Leavitt, Peter F. Kurunczi, Timothy J. Miller, Svetlana B. Radovanov
  • Patent number: 8664098
    Abstract: A plasma processing apparatus includes a process chamber, a platen for supporting a workpiece, a source configured to generate a plasma in the process chamber, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.
    Type: Grant
    Filed: January 19, 2012
    Date of Patent: March 4, 2014
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Ludovic Godet, Timothy J. Miller, Svetlana B. Radovanov, Anthony Renau, Vikram Singh
  • Publication number: 20130287964
    Abstract: An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.
    Type: Application
    Filed: April 26, 2012
    Publication date: October 31, 2013
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Svetlana B. Radovanov, Victor M. Benveniste, Bon-Woong Koo, Richard M. White, Kevin M. Daniels
  • Publication number: 20130287963
    Abstract: An ion implantation apparatus including a first plasma chamber, a second plasma chamber and an extraction electrode disposed therebetween. The first and second plasma chambers configured to house respective plasmas in response to the introduction of a different feed gases therein. The extraction electrode is electrically isolated from the plasma chamber. An extraction voltage is applied to the first plasma chamber above a bias potential used to generate the plasma therein. The extraction voltage drives the plasma potential to accelerate the ions in the first plasma to a desired implant energy. The accelerated ions pass through an aperture in the extraction electrode and are directed toward a substrate housed within the second plasma chamber for implantation.
    Type: Application
    Filed: April 26, 2012
    Publication date: October 31, 2013
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Svetlana B. Radovanov, Ludovic Godet, Bon-Woong Koo, Timothy J. Miller
  • Patent number: 8309935
    Abstract: An ion implantation system includes an electrostatic lens. The electrostatic lens includes a terminal electrode, a ground electrode and a suppression electrode disposed therebetween. An ion beam enters the electrostatic lens through the terminal electrode and exits through the ground electrode. The electrodes have associated electrostatic equipotentials. An end plate is disposed between a top and bottom portion of the suppression electrode and/or the top and bottom portion of the ground electrode. The respective end plate has a shape which corresponds to the electrostatic equipotential associated with the particular electrode in order to maintain uniformity of the beam as it passes through the electrostatic lens.
    Type: Grant
    Filed: April 3, 2009
    Date of Patent: November 13, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Frank Sinclair, Svetlana B. Radovanov, Kenneth H. Purser
  • Publication number: 20100252746
    Abstract: An ion implantation system includes an electrostatic lens. The electrostatic lens includes a terminal electrode, a ground electrode and a suppression electrode disposed therebetween. An ion beam enters the electrostatic lens through the terminal electrode and exits through the ground electrode. The electrodes have associated electrostatic equipotentials. An end plate is disposed between a top and bottom portion of the suppression electrode and/or the top and bottom portion of the ground electrode. The respective end plate has a shape which corresponds to the electrostatic equipotential associated with the particular electrode in order to maintain uniformity of the beam as it passes through the electrostatic lens.
    Type: Application
    Filed: April 3, 2009
    Publication date: October 7, 2010
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Frank Sinclair, Svetlana B. Radovanov, Kenneth H. Purser
  • Patent number: 7675047
    Abstract: A technique for shaping a ribbon-shaped ion beam is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for shaping a ribbon-shaped ion beam. The apparatus may comprise an electrostatic lens having a substantially rectangular aperture for a ribbon-shaped ion beam to pass through, wherein a plurality of focusing elements are positioned along short edges of the aperture, and wherein each focusing element is separately biased and oriented to shape the ribbon-shaped ion beam.
    Type: Grant
    Filed: September 29, 2006
    Date of Patent: March 9, 2010
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Svetlana B. Radovanov, Peter L. Kellerman, Victor M. Benveniste, Robert C. Lindberg, Kenneth H. Purser, Tyler B. Rockwell, James S. Buff, Anthony Renau
  • Patent number: 7579605
    Abstract: Multi-purpose electrostatic lens for an ion implanter. The electrostatic lens allows an ion implanter to scan, accelerate, decelerate, expand, compress, focus and parallelize an ion beam. This capability enables the ion implanter to function as either a high precision medium-current ion implanter or as a high-current ion implanter.
    Type: Grant
    Filed: September 29, 2006
    Date of Patent: August 25, 2009
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Anthony Renau, James S. Buff, Svetlana B. Radovanov
  • Publication number: 20080078951
    Abstract: Multi-purpose electrostatic lens for an ion implanter. The electrostatic lens allows an ion implanter to scan, accelerate, decelerate, expand, compress, focus and parallelize an ion beam. This capability enables the ion implanter to function as either a high precision medium-current ion implanter or as a high-current ion implanter.
    Type: Application
    Filed: September 29, 2006
    Publication date: April 3, 2008
    Inventors: Anthony Renau, James S. Buff, Svetlana B. Radovanov
  • Patent number: 7339179
    Abstract: A technique for providing a segmented electrostatic lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as an electrostatic lens for use in an ion implanter. The lens may comprise an entrance electrode biased at a first voltage potential, wherein an ion beam enters the electrostatic lens through the entrance electrode. The lens may also comprise an exit electrode biased at a second voltage potential, wherein the ion beam exits the electrostatic lens through the exit electrode. The lens may further comprise a suppression electrode located between the entrance electrode and the exit electrode, the suppression electrode comprising a plurality of segments that are independently biased to manipulate an energy and a shape of the ion beam.
    Type: Grant
    Filed: April 28, 2006
    Date of Patent: March 4, 2008
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Svetlana B. Radovanov, Anthony Renau, James Steve Buff
  • Patent number: 7309997
    Abstract: A monitor system and method for characterizing semiconductor processes including ion implantation processes is provided. The system includes a test wafer which has a plurality of sensors formed on its surface. The test wafer may be loaded into the process chamber of a process system and exposed, for example, to an implant. During implantation, electrical signals may be transmitted from the sensor to circuitry external of the chamber to evaluate a variety of ion beam and/or wafer properties. The property data may be displayed in real-time with the implant process so that processing parameters may be adjusted accordingly. The monitor system may be used, in particular, to determine properties related to beam and wafer surface charging which can provide an assessment of the efficiency of beam charge neutralization processes.
    Type: Grant
    Filed: September 15, 2000
    Date of Patent: December 18, 2007
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Svetlana B. Radovanov, Edward Macintosh, Gary Ayers, Philip Corey
  • Patent number: 7279687
    Abstract: A technique for implementing a variable aperture lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as a variable aperture lens. The variable aperture lens may comprise a first electrode element. The variable aperture lens may also comprise a second electrode element. The variable aperture lens may further comprise a driver assembly coupled to at least one of the first and the second electrode elements, wherein the driver assembly alters an aperture between the first and the second electrode elements based on a geometry of an ion beam.
    Type: Grant
    Filed: August 26, 2005
    Date of Patent: October 9, 2007
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Gordon C. Angel, Svetlana B. Radovanov, Edward D. Macintosh
  • Publication number: 20070045557
    Abstract: A technique for implementing a variable aperture lens in an ion implanter is disclosed. In one particular exemplary embodiment, the technique may be realized as a variable aperture lens. The variable aperture lens may comprise a first electrode element. The variable aperture lens may also comprise a second electrode element. The variable aperture lens may further comprise a driver assembly coupled to at least one of the first and the second electrode elements, wherein the driver assembly alters an aperture between the first and the second electrode elements based on a geometry of an ion beam.
    Type: Application
    Filed: August 26, 2005
    Publication date: March 1, 2007
    Inventors: Gordon C. Angel, Svetlana B. Radovanov, Edward D. Macintosh