Patents by Inventor Sylvia H. Florez Marino

Sylvia H. Florez Marino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multilevel frequency addressable field driven MRAM
    Patent number: 8199553
    Abstract: A three-dimensional nonvolatile memory array device includes a plurality of memory elements and a memory controller. The plurality of memory elements each have a stack of a plurality of bits, which in turn each include a magnetic free layer, a magnetic pinned layer, and a non-magnetic layer. The magnetic free layer is configured to alternate its magnetization orientation based on a radio frequency current being at a resonant frequency of the magnetic free layer and on a magnetic field being applied to the magnetic free layer. The magnetic pinned layer has a specific magnetization orientation. The non-magnetic layer is located in between the magnetic free layer and the magnetic pinned layer. The memory controller is in communication with each of the plurality of memory elements, and configured to write data to and read data from the plurality of bits in the memory elements.
    Type: Grant
    Filed: December 17, 2009
    Date of Patent: June 12, 2012
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Wenyu Chen, Sylvia H. Florez Marino, Liesl Folks, Bruce D. Terris
  • MULTILEVEL FREQUENCY ADDRESSABLE FIELD DRIVEN MRAM
    Publication number: 20110149632
    Abstract: A three-dimensional nonvolatile memory array device includes a plurality of memory elements and a memory controller. The plurality of memory elements each have a stack of a plurality of bits, which in turn each include a magnetic free layer, a magnetic pinned layer, and a non-magnetic layer. The magnetic free layer is configured to alternate its magnetization orientation based on a radio frequency current being at a resonant frequency of the magnetic free layer and on a magnetic field being applied to the magnetic free layer. The magnetic pinned layer has a specific magnetization orientation. The non-magnetic layer is located in between the magnetic free layer and the magnetic pinned layer. The memory controller is in communication with each of the plurality of memory elements, and configured to write data to and read data from the plurality of bits in the memory elements.
    Type: Application
    Filed: December 17, 2009
    Publication date: June 23, 2011
    Inventors: Wenyu Chen, Sylvia H. Florez Marino, Liesl Folks, Bruce D. Terris