Patents by Inventor Syuusaku Maeda
Syuusaku Maeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8399272Abstract: A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.Type: GrantFiled: October 27, 2009Date of Patent: March 19, 2013Assignee: Panasonic CorporationInventors: Kazuyuki Yamae, Hiroshi Fukshima, Masaharu Yasuda, Tomoya Iwahashi, Hidenori Kamei, Syuusaku Maeda
-
Patent number: 8367442Abstract: A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.Type: GrantFiled: October 27, 2009Date of Patent: February 5, 2013Assignee: Panasonic CorporationInventors: Kazuyuki Yamae, Hiroshi Fukshima, Masaharu Yasuda, Tomoya Iwahashi, Hidenori Kamei, Syuusaku Maeda
-
Patent number: 8309975Abstract: In a semiconductor light emitting device, in which a light emitting layer is formed on one surface of a conductive substrate, and an n-type electrode and a p-type electrode are formed on the same side as the light emitting layer, there has been the problem that, if larger electric power is applied, heat is generated near the n-side electrode to reduce luminous efficiency. The n-side electrode has a predetermined length at a corner portion or along an edge of the substrate to disperse a current flowing from the n-side electrode into the substrate, thereby avoiding heat generation near the n-side electrode. In this type of semiconductor light emitting element, the existence of the n-side electrode reduces a light emitting area. Therefore, the length of the n-side electrode preferably ranges from 20% to 50% of the entire peripheral length of the substrate.Type: GrantFiled: October 30, 2008Date of Patent: November 13, 2012Assignee: Panasonic CorporationInventors: Atsuhiro Hori, Hidenori Kamei, Syuusaku Maeda
-
Publication number: 20110263058Abstract: A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.Type: ApplicationFiled: October 27, 2009Publication date: October 27, 2011Applicants: Panasonic Corporation, Panasonic Electric Works Co., Ltd.Inventors: Kazuyuki Yamae, Hiroshi Fukshima, Masaharu Yasuda, Tomoya Iwahashi, Hidenori Kamei, Syuusaku Maeda
-
Publication number: 20110037092Abstract: A light-emitting device includes an n-type semiconductor layer 13, a light-emitting layer 14, and a p-type semiconductor layer 15, which are sequentially stacked on a substrate 11; and a p-side electrode 16 formed on the p-type semiconductor layer 15. The p-side electrode 16 includes an adhesive layer 61 formed in contact with the p-type semiconductor layer 15, having a thickness ranging from 0.5 atomic layer to 1.5 atomic layer, and made of platinum; and a reflective layer 62 formed in contact with the adhesive layer 61, and made of a material containing silver.Type: ApplicationFiled: June 1, 2009Publication date: February 17, 2011Inventors: Atsuhiro Hori, Syuusaku Maeda, Hidenori Kamei
-
Patent number: 7875898Abstract: The inventive method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device using irradiation with laser light to partition a substrate having semiconductor layers formed thereon, with gallium contained in at least one of the substrate and the semiconductor layers, wherein the method comprises: forming grooves to be used as boundaries between individual substrates by irradiating the substrate along partitioning locations with laser light, immersing the substrate into an acid solution, and partitioning the substrate into individual substrates along the boundaries where grooves are formed. In this manner, it provides a method for manufacturing a semiconductor device in which, during the partitioning of a gallium-containing semiconductor device substrate, deposits of gallium compounds adhered during laser irradiation are removed, partitioning surfaces are formed flat and uniform, and the incidence of electrode continuity failures and resin peeling is low.Type: GrantFiled: September 21, 2007Date of Patent: January 25, 2011Assignee: Panasonic CorporationInventor: Syuusaku Maeda
-
Publication number: 20100258837Abstract: In a semiconductor light emitting device, in which a light emitting layer is formed on one surface of a conductive substrate, and an n-type electrode and a p-type electrode are formed on the same side as the light emitting layer, there has been the problem that, if larger electric power is applied, heat is generated near the n-side electrode to reduce luminous efficiency. The n-side electrode has a predetermined length at a corner portion or along an edge of the substrate to disperse a current flowing from the n-side electrode into the substrate, thereby avoiding heat generation near the n-side electrode. In this type of semiconductor light emitting element, the existence of the n-side electrode reduces a light emitting area. Therefore, the length of the n-side electrode preferably ranges from 20% to 50% of the entire peripheral length of the substrate.Type: ApplicationFiled: October 30, 2008Publication date: October 14, 2010Inventors: Atsuhiro Hori, Hidenori Kamei, Syuusaku Maeda
-
Publication number: 20080012037Abstract: The inventive method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device using irradiation with laser light to partition a substrate having semiconductor layers formed thereon, with gallium contained in at least one of the substrate and the semiconductor layers, wherein the method comprises: forming grooves to be used as boundaries between individual substrates by irradiating the substrate along partitioning locations with laser light, immersing the substrate into an acid solution, and partitioning the substrate into individual substrates along the boundaries where grooves are formed. In this manner, it provides a method for manufacturing a semiconductor device in which, during the partitioning of a gallium-containing semiconductor device substrate, deposits of gallium compounds adhered during laser irradiation are removed, partitioning surfaces are formed flat and uniform, and the incidence of electrode continuity failures and resin peeling is low.Type: ApplicationFiled: September 21, 2007Publication date: January 17, 2008Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventor: SYUUSAKU MAEDA
-
Patent number: 7291510Abstract: The inventive method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device using irradiation with laser light to partition a substrate having semiconductor layers formed thereon, with gallium contained in at least one of the substrate and the semiconductor layers, wherein the method comprises: forming grooves to be used as boundaries between individual substrates by irradiating the substrate along partitioning locations with laser light, immersing the substrate into an acid solution, and partitioning the substrate into individual substrates along the boundaries where grooves are formed. In this manner, it provides a method for manufacturing a semiconductor device in which, during the partitioning of a gallium-containing semiconductor device substrate, deposits of gallium compounds adhered during laser irradiation are removed, partitioning surfaces are formed flat and uniform, and the incidence of electrode continuity failures and resin peeling is low.Type: GrantFiled: July 25, 2005Date of Patent: November 6, 2007Assignee: Matsushita Electric Industrial Co., Ltd.Inventor: Syuusaku Maeda
-
Publication number: 20060115962Abstract: The inventive method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device using irradiation with laser light to partition a substrate having semiconductor layers formed thereon, with gallium contained in at least one of the substrate and the semiconductor layers, wherein the method comprises: forming grooves to be used as boundaries between individual substrates by irradiating the substrate along partitioning locations with laser light, immersing the substrate into an acid solution, and partitioning the substrate into individual substrates along the boundaries where grooves are formed. In this manner, it provides a method for manufacturing a semiconductor device in which, during the partitioning of a gallium-containing semiconductor device substrate, deposits of gallium compounds adhered during laser irradiation are removed, partitioning surfaces are formed flat and uniform, and the incidence of electrode continuity failures and resin peeling is low.Type: ApplicationFiled: July 25, 2005Publication date: June 1, 2006Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventor: Syuusaku Maeda