Abstract: There is provided a gas exhaust pump system capable of suppressing the inclusion of a seal gas into a process gas. The gas exhaust pump system has a main and sub pumps. The main pump has a screw rotor, a rotating shaft, a holding unit, a lubricating oil supply path, a seal housing for covering a periphery of a non-held portion by the holding unit with a predetermined gap formed with an outer periphery of the rotating shaft, a seal member interposed between the rotating shaft and the seal housing, a seal gas supply path for supplying a seal gas to the gap, and a seal gas exhaust path for exhausting the seal gas from the gap to the outside of the main pump. The sub pump is configured to reduce a pressure in the seal gas exhaust path.

Abstract: In a gas exhaust pump, there is provided a rotation mechanism that can ensure safe rotation and can greatly reduce the usage of a seal gas. A rotation mechanism of the present invention is formed of a rotating shaft and a seal housing. Between the rotating shaft and the seal housing, there is provided a predetermined gap. On at least one of an outer surface of the rotating shaft and an inner surface of the seal housing, there is provided a PFA film. As to a PFA film on a surface of at least one of the rotating shaft and the seal housing, after coating with PFA the wall surface of the rotation mechanism member defining at least the gap, followed by melting and remelting processes, the PFA film is formed to have a high smoothness on its free surface.

Abstract: There is provided a stator that can ensure safe rotation even if a width of a gap between a screw rotor and a stator is particularly smaller than that of a conventional one and can greatly increase a pumping performance of a pump. A stator of the present invention is formed of a metal and a PFA film is provided on an inner wall surface of a top end surface of a screw rotor. After coating the inner wall surface with PFA, followed by melting and remelting processes, the PFA film is formed to have a high smoothness. The stator is placed with a gap between the inner wall surface and the top end surface. If the PFA film of the present invention is provided in a predetermined manner, the width of the gap can be made significantly smaller than that of a conventional one.

Abstract: In the plasma-based ion implantation for accelerating positive ions of a plasma and implanting the positive ions into a substrate to be processed on a holding stage in a processing chamber where the plasma has been excited, ion implantation is achieved in the following manner: an RF power having a frequency of 4 MHz or greater is applied to the holding stage to cause a self-bias voltage to generate on the surface of the substrate. The RF power is applied a plurality of times in the form of pulses.

Abstract: A plasma processing apparatus for processing an object to be processed using a plasma. The apparatus includes a processing chamber defining a processing cavity for containing an object to be processed and a process gas therein, a microwave radiating antenna having a microwave radiating surface for radiating a microwave in order to excite a plasma in the processing cavity, and a dielectric body provided so as to be opposed to the microwave radiating surface, in which the distance D between the microwave radiating surface and a surface of the dielectric body facing away from the microwave radiating surface, which is represented with the wavelength of the microwave being a distance unit, is determined to be in the range satisfying the inequality 0.7×n/4?D?1.3×n/4 (n being a natural number).

Abstract: A plasma processing apparatus includes: a processing chamber produced from a metal; a susceptor configured to mount a substrate; an electromagnetic wave source that supplies an electromagnetic wave; one or more dielectric member provided at an inner wall of the processing chamber, and configured to transmit the electromagnetic wave into an inside of the processing chamber; one or more metal electrode, wherein each metal electrode is installed on a bottom surface of each dielectric member such that a part of the each dielectric member is exposed to the inside of the processing chamber; and a surface wave propagating section which is a metal surface facing the susceptor, the surface wave propagating section being installed adjacent to the dielectric member and being exposed to the inside of the processing chamber. The surface wave propagating section and a bottom surface of the metal electrode are positioned on the same plane.

Abstract: There is provided with an etching method using an etching apparatus. Four arms can be positioned in a direction substantially from a center of the stage toward a peripheral portion with an angle difference of about 90°. Etchant is supplied to a first position nearest to the center of the object which is rotating, from a first etchant supply nozzle placed on a first arm. Etchant is further supplied to a second position second nearest to the center of the object, from a second etchant supply nozzle placed on a second arm. The second arm is substantially symmetrically positioned with respect to the first arm and the second arm has an angle difference of about 180° with respect to the first arm.

Abstract: A vaporizer, capable of stabilizing the behavior of pressure inside the vaporizer, includes a chamber having an inlet and an outlet, a heating device that heats the inside of the chamber, a partition wall structure 13 that is provided inside the vaporizer and partitions the liquid material inside the chamber into a plurality of sections, and liquid distribution portions 20 that are provided at the lower portion of the partition wall structure 13 and that allow liquid distribution among the sections partitioned by the partition wall structure 13, and the partition wall structure includes a grid-like, honeycomb-shaped, mesh-like, or pipe-shaped partition wall.

Abstract: There is provided a screw rotor that can ensure safe rotation and can greatly increase a pumping performance of a pump. The screw rotor is placed with a gap between a top end surface of a tooth of a screw portion and an inner wall surface of a stator. A PFA film is provided on the top end surface. If the PFA film of the present invention is provided in a predetermined manner, the width of a gap between a free surface of the PFA film and the inner wall surface of the stator can be made significantly smaller than that of a conventional one, so that the pumping performance is greatly improved. After coating at least the top end surface of the screw rotor with PFA, followed by melting and remelting processes, the PFA film is formed to have a high smoothness on its free surface.

Abstract: The water hammerless opening device comprises an actuator operating type valve installed on the fluid passage, an electro-pneumatic conversion device to supply the 2-step actuator operating pressure Pa to the afore-mentioned actuator operating type valve, a vibration sensor removably fixed to the pipe passage on the upstream side of the actuator operating type valve, and a tuning box to which the vibration detecting signal Pr detected by the vibration sensor is inputted, through which the control signal Sc to control the step operating pressure Ps? of the afore-mentioned 2-step actuator operating pressure Pa is outputted to the electro-pneumatic conversion device, and with which the 2-step actuator operating pressure Pa, of the step operating pressure Ps? which makes the vibration detecting signal Pr nearly zero, is outputted from the electro-pneumatic conversion by adjusting the control signal Sc.

Abstract: A semiconductor device manufacturing method includes exciting plasma, applying RF power onto a target substrate to generate substrate bias and performing an ion implantation plural times by applying the RF power in the form of pulses.

Abstract: A heat equalizer includes a container structure having a heating block in which a working fluid is held for heating and vaporizing a material to be heated, a heater placed at the bottom of the container structure, and a material feed pipe allowing the outside and the inside of the container structure to communicate with each other. In the heating block, as a flow path in which the material to be heated flows, a main header pipe connected to the material feed pipe and extending in the horizontally, and a riser pipe branching from the main header pipe and extending vertically are formed. As a condensation path in which the working fluid is cooled and condensed, condensation holes formed respectively on the opposite sides of the riser pipe and extending horizontally, and a condensation pit formed under the riser pipe are formed. Between the condensation holes and the condensation pit, the main header pipe is placed.

Abstract: Disclosed is a method for prediction of a film material such as a raw material for organic EL. In the method, a film material having an evaporation rate (V(%)) represented by the formula below can be predicted based on the values of the constant (Ko) and the activation energy (Ea). V=(Ko/P)×e?Ea/kT wherein Ko represents a constant (%·Torr), P represents a pressure (Torr), Ea represents an activation energy (eV), k represents a Boltzmann constant, and T represents an absolute temperature.

Abstract: Provided is an Al alloy member with an excellent mechanical strength that is sufficient for use in large-scale manufacturing apparatuses. The Al alloy member is characterized in that, in mass %, Mg concentration is 5.0% or less, Ce concentration is 15% or less, Zr concentration is 0.15% or less, the balance comprises Al and unavoidable impurities, the elements of the unavoidable impurities are respectively 0.01% or less, and the Vickers hardness of the Al alloy member is greater than 30.

Abstract: There is provided a solenoid valve that realizes space-saving by reducing the size of a dedicated driving power source. There is provided a solenoid valve capable of instantaneously opening and closing that includes an electric double layer capacitor having a low direct current internal resistance and a low equivalent series resistance as a motive power supply. The electric double layer capacitor has single-cell electrical properties including a capacitance of 1 to 5 F, a rated voltage of 21 to 2.7 V, a direct current internal resistance of 0.01 to 0.1?, and an equivalent series resistance at 1 KHz of 0.03 to 0.09?, and includes a polarizable electrode made of glassy carbon having a specific surface area of 1 to 500 m2/g.

Abstract: An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×1017 cm?3 to achieve a large gate voltage swing.

Abstract: A transistor capable of adjusting a threshold value is obtained by adjusting an impurity concentration of a silicon substrate supporting an SOI layer and by controlling a thickness of a buried insulating layer formed on a surface of the silicon substrate in contact with the SOI layer.

Abstract: A structural member for a manufacturing apparatus has a metal base member mainly composed of aluminum, a high-purity aluminum film formed on the surface of the metal base member, and a nonporous amorphous aluminum oxide passivation film which is formed by anodizing the high-purity aluminum film. A method for producing a structural member for a manufacturing apparatus, includes forming a high-purity aluminum film on the surface of a metal base member mainly composed of aluminum, and anodizing the high-purity aluminum film in a chemical conversion liquid having a pH of 4-10 and containing a nonaqueous solvent, which has a dielectric constant lower than that of water and dissolves water, thereby converting at least a surface portion of the high-purity aluminum film into a nonporous amorphous aluminum oxide passivation film.

Abstract: A magnetron sputtering apparatus for processing a substrate includes a target holding member for holding a target installed to face the substrate and a magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma is confined on a surface of the target by forming a magnetic field on the target surface by the magnet, on the target surface, a plasma loop is formed around a region on a loop where a vertical magnetic field component perpendicular to the target does not substantially exist while a horizontal magnetic field component parallel to the target mainly exists, and the horizontal magnetic field component at all position on the loop where the horizontal magnetic field mainly exists is in a range of about 500 Gauss to 1200 Gauss.

Abstract: A multilayer wiring board 100 comprises a first wiring region 101 where wirings 103a and insulating layers 104a and 104b are alternately laminated, and a second wiring region 102 where a thickness H2 of an insulating layer 104 is twice or more a thickness H1 of the insulating layer in the first wiring region 101 and a width W2 of a wiring 103b is twice or more a width W1 of the wiring in the first wiring region 101. The first wiring region 101 and the second wiring region 102 are integrally formed on the same board.